IRF151 - Intersil Corporation - Datasheet.Directory

File Number

1824.3

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

IRF150

40A, 100V, 0.055 Ohm, N-Channel

Power MOSFET

This N-Channel enhancement mode silicon gate power ﬁeld

effect transistor is an advanced power MOSFET designed,

tested, and guaranteed to withstand a speciﬁed level of

energy in the breakdown avalanche mode of operation. All of

these power MOSFETs are designed for applications such

as switching regulators, switching convertors, motor drivers,

relay drivers, and drivers for high power bipolar switching

transistors requiring high speed and low gate drive power.

These types can be operated directly from integrated

circuits.

Formerly Developmental Type TA17421.

Features

• 40A, 100V

•r

DS(ON) = 0.055Ω

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Symbol

Packaging

JEDEC TO-204AE

Ordering Information

PART NUMBER PACKAGE BRAND

IRF150 TO-204AE IRF150

NOTE: When ordering, include the entire part number. G

DRAIN

(FLANGE)

SOURCE (PIN 2)

GATE (PIN 1)

Data Sheet March 1999

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Speciﬁed

IRF150 UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS 100 V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 100 V

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID 40 A

TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID25 A

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 160 A

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS ±20 V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD150 W

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2 W/oC

Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS 150 mJ

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

pkg 300

260

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe

device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

NOTE:

1. TJ = 25oC to 125oC.

Electrical Speciﬁcations TC = 25oC, Unless Otherwise Speciﬁed

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA (Figure 10) 100 - - V

Gate to Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA 2.0 - 4.0 V

Zero Gate Voltage Drain Current IDSS VDS = Rated BVDSS, VGS = 0V - - 25 µA

VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125oC - - 250 µA

On-State Drain Current (Note 2) ID(ON) VDS > ID(ON) x rDS(ON)MAX, VGS = 10V 40 - - A

Gate to Source Leakage Current IGSS VGS = ±20V - - ±100 nA

Drain to Source On Resistance (Note 2) rDS(ON) VGS = 10V, ID = 20A (Figures 8, 9) - 0.045 0.055 Ω

Forward Transconductance (Note 2) gfs VDS > ID(ON) x rDS(ON)MAX, ID = 20A (Figure 12) 9.0 11 - S

Turn-On Delay Time td(ON) VDD = 24V, ID≈20A, RG = 4.7Ω, RL = 1.2Ω

(Figures 17, 18) MOSFET Switching Times are

Essentially Independent of Operating Temperature

- - 35 ns

Rise Time tr- - 100 ns

Turn-Off Delay Time td(OFF) - - 125 ns

Fall Time tf- - 100 ns

Total Gate Charge

(Gate to Source + Gate to Drain) Qg(TOT) VGS = 10V, ID = 50A, VDS = 0.8 x Rated BVDSS,

Ig(REF) = -1.5mA (Figures 14, 19, 20) Gate Charge

is Essentially Independent of Operating

Temperature

- 63 120 nC

Gate to Source Charge Qgs -27-nC

Gate to Drain “Miller” Charge Qgd -36-nC

Input Capacitance CISS VGS = 0V, VDS = 25V, f = 1.0MHz (Figure 11) - 2000 - pF

Output Capacitance COSS - 1000 - pF

Reverse Transfer Capacitance CRSS - 350 - pF

Internal Drain Inductance LDMeasured between the

Contact Screw on the

Flange that is Closer to

SourceandGate Pinsand

the Center of Die

Modified MOSFET

Symbol Showing the

Internal Devices

Inductances

- 5.0 - nH

Internal Source Inductance LSMeasured from the

Source Lead, 6mm

(0.25in) from the Flange

and the Source Bonding

Pad

- 12.5 - nH

Thermal Impedance Junction to Case RθJC - - 0.8 oC/W

Thermal Impedance Junction to Ambient RθJA Free Air Operation - - 30 oC/W

IRF150

Source to Drain Diode Speciﬁcations

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Continuous Source to DrainCurrent ISD Modified MOSFET

Symbol Showing the

Integral Reverse P-N

Junction Diode

- - 40 A

Pulse Source to Drain Current (Note 3) ISDM - - 160 A

Diode Source to Drain Voltage (Note 2) VSD TJ = 25oC, ISD = 40A, VGS = 0V (Figure 13) - - 2.5 V

Reverse Recovery Time trr TJ = 150oC, ISD = 40A, dISD/dt = 100A/µs - 600 - ns

Reverse Recovery Charge QRR TJ = 25oC, ISD = 5.5A, dISD/dt = 100A/µs - 3.3 - µC

NOTES:

2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).

4. VDD = 10V, starting TJ = 25oC, L = 170µH, RG = 50Ω, Peak IAS = 40A. See Figures 15, 16.

Typical Performance Curves

Unless Otherwise Speciﬁed

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE

0 50 100 150

TC, CASE TEMPERATURE (oC)

POWER DISSIPATION MULTIPLIER

0.2

0.4

0.6

0.8

1.0

1.2

TC, CASE TEMPERATURE (oC)

50 75 10025 150

ID, DRAIN CURRENT (A)

125

1.0

0.1

10-2

10-5 10-4 10-3 0.1 1 10

t1, RECTANGULAR PULSE DURATION (s)

ZθJC, TRANSIENT THERMAL

0.01 SINGLE PULSE DUTY FACTOR: D = t1/t2

PDM

NOTES:

0.5

TJ = PDM x ZθJC + TC

0.01

0.2

0.1

0.02

0.05

IMPEDANCE (oC/W)

IRF150

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS

FIGURE 6. SATURATION CHARACTERISTICS FIGURE 7. TRANSFER CHARACTERISTICS

NOTE: Heating effect of 2µs is minimal.

FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE

VOLTAGE AND DRAIN CURRENT

FIGURE 9. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

Typical Performance Curves

Unless Otherwise Speciﬁed (Continued)

102

110

102

ID, DRAIN CURRENT (A)

VDS, DRAIN TO SOURCE VOLTAGE (V) 103

103

SINGLE PULSE

TC = 25oC

OPERATION IN THIS

REGION IS LIMITED

BY rDS(ON)

TJ = MAX RATED

10µs

100µs

1ms

10ms

100ms

VDS, DRAIN TO SOURCE VOLTAGE (V)

10 20 30 40050

ID, DRAIN CURRENT (A)

VGS = 8V

80µs PULSE TEST

10V

VDS, DRAIN TO SOURCE VOLTAGE (V)

0.4 0.8 1.2 1.60 2.0

ID, DRAIN CURRENT (A)

80µs PULSE TEST

VGS = 10V

ID, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

001234 8

TJ = 125oC

TJ = 25oC

TJ = -55oC

80µs PULSE TEST

VDS >I

D(ON) xr

DS(ON)MAX

567

ID, DRAIN CURRENT (A)

40 80 120

0 160

0.20

0.14

0.10

0.06

rDS(ON), DRAIN TO SOURCE

VGS = 20V

0.02

VGS = 10V

ON RESISTANCE (Ω)

2.2

1.4

0.6

80-60 TJ, JUNCTION TEMPERATURE (oC)

NORMALIZED DRAIN TO SOURCE

1.8

1.0

0.2 0 60 120

ON RESISTANCE

-20-40 20 40 100 140

ID = 14A

VGS = 10V

IRF150

FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN

VOLTAGE vs JUNCTION TEMPERATURE FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE

FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE

Typical Performance Curves

Unless Otherwise Speciﬁed (Continued)

1.25

1.05

0.85

TJ, JUNCTION TEMPERATURE (oC)

NORMALIZED DRAIN TO SOURCE

1.15

0.95

0.75 -20 20 100 160

BREAKDOWN VOLTAGE

0-40 40 80 120 140

ID = 250µA

010 304050

C, CAPACITANCE (pF)

VDS, DRAIN TO SOURCE VOLTAGE (V)

4000

3200

2400

1600

800

020

CRSS

CISS

COSS

VGS = 0V, f = 1MHz

CISS = CGS + CGD

CRSS = CGD

COSS ≈ CDS + CGD

ID, DRAIN CURRENT (A)

10 20 30 40050

gfs, TRANSCONDUCTANCE (S)

80µs PULSE TEST

TJ = -55oC

TJ = 25oC

TJ = 125oC

ISD, SOURCE TO DRAIN CURRENT (A)

VSD, SOURCE TO DRAIN VOLTAGE (V)

102

1.001234

TJ = 25oC

TJ = 150oC

Qg(TOT), TOTAL GATE CHARGE (nC)

28 56 84 1120 140

VGS, GATE TO SOURCE VOLTAGE (V)

VDS = 20V

ID = 40A

FOR TEST CIRCUIT,

SEE FIGURE 19

VDS = 80V

VDS = 50V

IRF150

Test Circuits and Waveforms

FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS

FIGURE 17. SWITCHING TIME TEST CIRCUIT FIGURE 18. RESISTIVE SWITCHING WAVEFORMS

FIGURE 19. GATE CHARGE TEST CIRCUIT FIGURE 20. GATE CHARGE WAVEFORMS

VGS

0.01Ω

IAS

VDS

VDD

DUT

VARY tP TO OBTAIN

REQUIRED PEAK IAS

VDD

VDS

BVDSS

IAS

tAV

VGS

DUT

-VDD

tON

td(ON)

90%

10%

VDS 90%

10%

td(OFF)

tOFF

90%

50%

10% PULSE WIDTH

VGS

0.3µF

12V

BATTERY 50kΩ

VDS

DUT

Ig(REF)

(ISOLATED

VDS

0.2µF

CURRENT

REGULATOR

ID CURRENT

SAMPLING

IG CURRENT

SAMPLING

SUPPLY)

RESISTOR RESISTOR

SAME TYPE

AS DUT Qg(TOT)

Qgd

Qgs

VDS

VGS

VDD

IG(REF)

IRF150

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Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-

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IRF150