Data Sheet
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© 2011 ROHM Co., Ltd. All rights reserved.
PIN diode
RN141S
Applications Dimensions (Unit : mm) Land size figure (Unit : mm)
High frequency switching
Features
1) Ultra small mold type. (EMD2)
2) High frequency resistance is very small.
Construction
Silicon epitaxial planer Structure
Taping specifications (Unit : mm)
Absolute maximum ratings (Ta=25°C)
Symbol Unit
VRV
IFmA
Tj °C
Tstg °C
Electrical characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Conditions
Forward voltage VF- - 1.0 V IF=10mA
Reverse current IR- - 0.1 μAVR=50V
Ct - - 0.8 pF VR=1.0V , f=1MHz
Rf - - 2 IF=3mA,f=100MHz
Forward resistance
Parameter
Capacitance between terminals
Storage temperature -55 to +150
Reverse voltage (DC) 100
Junction temperature 150
Parameter Limits
Reverse voltage (repetitive peak) 50
EMD2
0.8
1.7
0.6
ROHM : EMD2
JEITA : SC-79
JEDEC :SOD-523
dot
(y
ear week factor
y
0.12±0.05
0.6±0.1
0.3±0.05
0.8±0.05
1.2±0.05
1.6±0.1
0.95±0.06
0
4.0±0.1
4.0±0.1 2.0±0.05 φ1.5±0.05
3.5±0.05 1.75±0.1
8.0±0.15
0.2±0.05
0.76±0.05
1.26±0.05
0
φ0.5
0.6
2.0±0.05
1.3±0.06
0
2.45±0.1
空ポケット
0.2
φ1.55±0.05
2.40±0.05
0.90±0.05 0.75±0.0 5
1.25 0.06
0
1.25 0.06
0
Empty pocket
1/2 2011.03 - Rev.C
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© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
RN141S
800
810
820
830
840
850
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
FORWARD CURRENT:IF(mA)
REVERSE CURRENT:IR(nA)
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
VF DISPERSION MAP
FORWARD VOLTAGE:VF(mV)
REVERSE CURRENT:IR(nA)
IR DISPERSION MAP
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ct DISPERSION MAP
ELECTROSTATIC
DDISCHARGE TEST ESD(KV)
ESD DISPERSION MAP
FORWARD CURRENT:IF(mA)
rf-IF CHARACTERISTICS
FORWARD OPERATING
RESISTANCE:rf(Ω)
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
FREQUENCY(MHz)
Ct-f CHARACTERISTICS
FORWARD CURRENT:IF(mA)
rf DISPERSION MAP
FORWARD OPERATING
RESISTANCE:rf(Ω)
0.1
1
10
100
0 100 200 300 400 500 600 700 800 900 1000 1100
Ta=-25℃
Ta=125℃
Ta=75℃
Ta=25℃
Ta=150℃
0.0001
0.001
0.01
0.1
1
10
0 1020304050
Ta=25℃
Ta=-25℃
Ta=125℃
Ta=75℃
Ta=150℃
0.01
0.1
1
10
0102030
f=1MH
0.1
1
10
100
0.1 1 10
f=10MHz
f=1MHz
f=100MHz
0.1
1
1 10 100 1000
Ta=25℃
VR=0V
AVE:826.1mV
Ta=25℃
IF=10mA
n=30pcs
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
Ta=25℃
VR=50V
n=30pcs
AVE:0.137nA
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
AVE:0.663pF
Ta=25℃
f=1MHz
VR=1V
n=10pcs
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
AVE:0.941Ω
Ta=25℃
f=100MHz
IF=3mA
n=10pcs
0
1
2
3
4
5
AVE:0.36kV
AVE:1.55kV
C=100pF
R=1.5kΩ
C=200pF
R=0Ω
2/2 2011.03 - Rev.C
R1120A
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© 2011 ROHM Co., Ltd. All rights reserved.
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