© Semiconductor Components Industries, LLC, 2013
April, 2020 − Rev. 4
1Publication Order Number:
RURG8060−F085/D
Ultrafast Rectifier
80 A, 600 V
RURG8060-F085
Description
The RURG8060−F085 is an ultrafast diode with soft recovery
characteristics (trr < 90ns). It has low forward voltage drop and is
of silicon nitride passivated ionimplanted epitaxial planar
construction.
This device is intended for use as a freewheeling/ clamping diode
and rectifier in a variety of switching power supplies and other power
switching applications. Its low stored charge and ultrafast recovery
with soft recovery characteristic minimize ringing and electrical noise
in many power switching circuits, thus reducing power loss in
the switching transistors.
Features
•High Speed Switching ( trr = 74 ns (Typ.) @ IF = 80 A )
•Low Forward Voltage( VF = 1.34 V (Typ.) @ IF = 80 A )
•Avalanche Energy Rated
•AEC−Q101 Qualified
•This Device is Pb−Free
Applications
•Automotive DCDC converter
•Automotive On Board Charger
•Switching Power Supply
•Power Switching Circuits
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM 600 V
Working Peak Reverse Voltage VRWM 600 V
DC Blocking Voltage VR600 V
Average Rectified Forward Current
(TC = 25 °C)
IF(AV) 80 A
Non−repetitive Peak Surge Current
(Halfwave 1 Phase 50 Hz)
IFSM 240 A
Avalanche Energy
(1.6 A, 40 mH)
EAVL 50 mJ
Operating Junction and Storage
Temperature
TJ, TSTG −55 to
+175
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
www.onsemi.com
TO−247−2L
340CL
MARKING DIAGRAM
$Y&Z&3&K
RURG8060
See detailed ordering and shipping information on page 2 of
this data sheet.
ORDERING INFORMATION
ANODE
CATHODE
$Y = ON Semiconductor Logo
&Z = Assembly Plant Code
&3 = Numeric Date Code
&K = Lot Code
RURG8060 = Specific Device Code
1. Cathode 2. Anode
RURG8060−F085
www.onsemi.com
2
THERMAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol Parameter Max Units
RqJC Maximum Thermal Resistance, Junction to Case 0.85 °C/W
RqJA Maximum Thermal Resistance, Junction to Ambient 50 °C/W
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking Device Package Tube Quantity
RURG8060 RURG8060−F085 TO−247 −30
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
IRInstantaneous Reverse Current VR = 600 V TC = 25°C− − 250 uA
TC = 175°C− − 2 mA
VFM
(Note 1)
Instantaneous Forward Voltage IF = 80 A TC = 25°C−1.34 1.6 V
TC = 175°C−1.17 1.4 V
trr
(Note 2)
Reverse Recovery Time IF = 1 A,
di/dt = 100 A/ms,
VCC = 390 V
TC = 25°C−46 75 ns
IF = 80 A,
di/dt = 100 A/ms,
VCC = 390 V
TC = 25°C−74 90 ns
TC = 175°C−290 −ns
ta
tb
Qrr
Reverse Recovery Time
Reverse Recovery Charge
IF = 80 A,
di/dt = 100 A/ms,
VCC = 390 V
TC = 25°C−38
36
130
−
−
−
ns
ns
nC
EAVL Avalanche Energy IAV = 1.6 A, L = 40 mH 50 − − mJ
1. Pulse : Test Pulse width = 300 ms, Duty Cycle = 2%
2. Guaranteed by design
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
RURG8060−F085
www.onsemi.com
3
TEST CIRCUITS AND WAVEFORMS
Figure 1. Trr Test Circuit Figure 2. Trr Waveforms and Definitions
Figure 3. Avalanche Energy Test Circuit Figure 4. Avalanche Current and Voltage Waveforms
I = 1.6 A
L = 40 mH
R < 0.1 W
EAVL = 1/2LI2 [VR(AVL)/(VR(AVL)−VDD)]
Q1 = IGBT (BVCES > DUT VR(AVL))
IRM
RG
L
VDD
IGBT
CURRENT
SENSE
DUT
GE
t1
t2
+
−
dt
dIF
IF
Trr
tatb
0
0.25IRM
DUT
CURRENT
SENSE
+
LR
VDD
−
VDD
Q1I
t0t1t2
IL
VAVL
t
IL
VGE AMPLITUDE AND
RG CONTROL dlF/dt
t1 AND t2 CONTROL IF
V
V
RURG8060−F085
www.onsemi.com
4
TYPICAL PERFORMANCE CHARECTERISTICS
Figure 5. Typical Forward Voltage Drop
vs. Forward Current
Figure 6. Typical Reverse
Current vs. Reverse Voltage
Figure 7. Typical Junction Capacitance Figure 8. Typical Reverse Recovery Time vs. di/dt
IR, Reverse Current (mA)
VR, Reverse Voltage (V)
IF
, Forward Current (A)
VF
, Forward Voltage (V)
Trr, Reverse Recovery Time (ns)
di/dt (A/ms)
Cj, Capacitances (pF)
VR, Reverse Voltage (V)
Figure 9. Typical Reverse Recovery Current vs. di/dt Figure 10. Forward Current Derating Curve
IF(AV), Average Forward Current (A)
TC, Case Temperature (5C)
di/dt (A/ms)
Irr, Reverse Recovery Current (A)
XXXX = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
ZZ = Assembly Lot Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
GENERIC
MARKING DIAGRAM*
AYWWZZ
XXXXXXX
XXXXXXX
TO−247−2LD
CASE 340CL
ISSUE A
DATE 03 DEC 2019
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
98AON13850G
DOCUMENT NUMBER:
DESCRIPTION:
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
TO−247−2LD
© Semiconductor Components Industries, LLC, 2018 www.onsemi.com
www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800−282−9855 Toll Free USA/Canada
Phone: 011 421 33 790 2910
LITERATURE FULFILLMENT:
Email Requests to: orderlit@onsemi.com
ON Semiconductor Website: www.onsemi.com
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative
◊
