) HARRIS 2N6757 2N6758 N-Channel Enhancement-Mode August 1991 Power Field-Effect Transistors Features Package * 8A and 9A, 150V - 200V eqtrow wie * FpS(on) = 0.42 and 0.62 DRAIN * SOA is Power-Dissipation Limited SOURCE / (FLANGE) * Nanosecond Switching Speeds Linear Transfer Characteristics * High Input Impedance Majority Carrier Device Description The 2N6757 and 2N6758 are n-channel enhancement-mode | Terminal Diagram silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, N-CHANNEL ENHANCEMENT MODE relay drivers, and drivers for high-power bipolar switching 3 a transistors requiring high speed and low gate-drive power. These D i . types can be operated directly from integrated circuits. s oO These types are supplied in the JEDEC TO-204AA steel package. < = 9 uw G zs fe} a s Absolute Maximum Ratings (To = +25C) Unless Otherwise Specified 2N6757 2N6758 UNITS Drain-Source Voltage .......... cc cece c eee cee n een ennateneeenne 150* 200* v Drain-Gate Voltage (R@g = 20kN) 150* 200* Vv Continuous Drain Current TG = F289 Loree eee e nee ene teen eben een eeena Ip 8.0* 9.0* A TE = tVOO0 eee cece eee eee nn eter eens i 5.0* 6.0* A Pulsed Drain Current . 12 15 A Gate-Source Voltage 00... . cc ccc cece rece t cnet ener eet eteneens +20 +20 v Maximum Power Dissipation To = +259C (See Figure 11) .. 6... cece cece cc cence ce eeeeeevnngess 75* 75* Ww To = +100C (See Figure 11) 30* 30* Ww Linear Derating Factor (See Figure 11) 2.00... 0... cece crc erect ences 0.6* 0.6* wc Inductive Current, Clamped .........2 00 cee en cence cence nner eneenees ILM 12 15 A (See Figures 1 and 2, L = 100uH) Operating and Storage Junction Temperature Range............ Ty TSTG -55 to +150* -55 to +150* oC Maximum Lead Temperature for Soldering ......... 00-00 cseceeccen er Th 300* 300* oC (0.063 (1.6mm) from case for 10s) *JEDEC registered values CAUTION: These devices are sensitive to electrostatic discharge. Proper 1.C. handling procedures should be followed. Copyright Harris Corporation 1991 File Number 1587.1 4-11 Specifications 2N6757, 2N6758 Electrical Characteristics @ Tc = 25C (Uniess Otherwise Specified) Parameter Type Min. Typ. Max. Units Test Conditions BVosgg Drain Source Breakdown Voltage | 2N6757 | 150 - Vv | Vgg70 2N6758 | 200 - VT ip= toma Vesitn) Gate Threshold Voltage ALL 2.0 - 40 Vv | Vos = Ves. lo = mA igsse Gate Body Leakage Forward ALL = = 100 aa Vag = 20V IGgssp Gate Body Leakage Reverse ALL - - 100 nA | Vgg = ~20 loss Zero Gate Voltags Orain Current ALL - 0.1 1.0" mA | Vg = Max. Rating, Vgg = 0 ~ 0.2 40 mA | Vog = Max. Rating, Vgg = 0, Te = 125C Voston} Static Drain-Source On-Stare 2N6757 - - 45 v Vgg = 10V, 1p = BA Volt one @ 2N6758 = - 3.6 v Ves = 10V, Ip = 9A Rps(on) Static Orain-Source On-Stete 2N6757 - o4 o6* 2 | Vgs = OV. Ip = SA Resistance (7) 2N6758 = 025 | O4 Rn | Vgs= 10V. 1p = 6A Roston) Static Drain-Source On-State 2N6757 - - vag 2 | Vgg = 10V, Ip = 5A, Te = 125C Resistance (1) o 2N675B ~ ~ 0.75" | Vgg = 10V. Ip = 6A, Te = 125C ty Forward Transconductence (7) ALL 3.0" 5.0 9.0 | S(u) | Vpg= 15, Ip = 6A Cig Input Capacitance ALL 350 600 00 oF Vgs * 0. Vong = 25V. f= 1.0 MHz Coss, Output Capacitance ALL 100 250 450 pF See Fig. 10 ig. Cres Reverse Transier Capacitance ALL aor 80 150 pe * tg ion} Turn-On Delay Time ALL ~ = 30 aa | Von 2 90V, Ip = 6A, Z, = 150 % Rise Tima ALL = = $0" ns | (See Figs, 13 and 14) tg (ott) Turn-Otf Daisy Time ALL ~ - 60 m | (MOSFET qwitching times are essentially % Fall Time ALL = = 40" ms | independent of operating temperature! Anse function-to-Case ALL = ~ 1.67 | C/W Rincs Case-to-Sink ALL - o1 - C/W | Mounting surface flat, smooth, and greased. Ringa dJunction-ta-Ambient ALL = ~ x >C/W | Free Air Operation Body-Drain Diode Ratings and Characteristics 1s Continuous Source Current 2N675? = ~ B.0 a | Modified MOSFET symbol . (Body Diode) 2NeTSs |= = 30 showing the integral ie - reverse P-N junction rectifier 7 1SM Pulsed Source Current 2N675? = ~ 12 A G Y {Body Diode) 2N6758 = = 15 5 Vsp Diode Forward Valtmge (7) 2N6757 | 0.75 ~ 1.50 Vv | Te = 28C, Ig = BA, VG = 0 2N6758 | 0.80* ~ 1.60 Vv | Te = 25C, ig = 9A, Vgg = 0 Ue Reverse Recovery Time ALL - 650 - ns Ty = 150C, Ig = Igng, dig /dt + 100 Alps Qa ~Reverse Recovered Charge ALL - 10 = uc | Ty = 150C, Ig = bong, dig /dt = 100 Ajus "JEDEC registered vaiues VARY ty TO OBTAIN REQUIRED PEAK (, QuT Ves 20V y " Fig. 1 - Clamped Inductive Test Circuit 80 ux PULSE Ip, ORAIN CURRENT (AMPERES) o 20 Vos. ORAIN-TO-SOURCE VOLTAGE (' Fig. 3 Typical Output Characteristics 80 (VOLTS) CG) Pulse Test: Pulse Width < 300 usec, Duty Cycie < 2% E, = 058Vgs5 TF Ve = 0.758V ps5 Fig. 2 Clamped Inductive Waveforms ip, ORAIN CURRENT (AMPERES) Fig. 4-12 Hs PULSE Vag = 15V 1 2 3 4 s & ? Vgs, GATE-TO-SQUACE VOLTAGE (VOLTS) 4 Typical Transfer Characteristics 2N6757, 2N6758 vs PULSE Ip. ORAIN CURRENT (AMPERES) ip. ORAIN CURRENT (AMPERES) 0 1 2 3 4 5 0 1 2 3 4 Vos, GAAIN-TO-SOURCE VOLTAGE (VOLTS) Vag. DRAIN-TO-SOURCE VOLTAGE (VOLTS) Fig. 5 Typical Saturation Characteristics Fig. 6 Typical Saturation Characteristics {2N6757)} (2N6758) 2 g = 2 e = - 3 = iT} 3 5 | i Zz a Ww = = 2 3 Ss o 3 3 =z g z = 8 Fa < 3 = ox : O wi = - z z Ty = 150C MAX 5 Vps< 18V SINGLE PULSE oO. ws PULSE 0 2 4 6 8 10 5.0 10 20 50 too 200 500 ig DRAIN CURRENT (AMPERES) Vos DRAIN-TO-SOURCE VOLTAGE (VOLTS) Fig. 7 Typical Transconductance Vs. Drain Current Fig. 8 Maximum Safe Operating Area 2000 =0 f= 1 MHz w 8 1600 < & a - s & 3s ww 1200 gs z eI 5 zu : z= = 200 z S = a = 2 zB 400 -40 0 40 80 120 160 0 0 20 30 4 50 T), AUNCTION TEMPERATURE (C) Vps, ORAIN-TO-SOURCE VOLTAGE (VOLTS) Fig.9Normalized Typical On-Resistance Vs. Temperature Fig. 10 Typical Capacitance Vs. Drain-to-Source Valtage 4-13 2N6757, 2N6758 Pp, POWER DISSIPATION (WATTS) Q 2 40 60 Ci) 100 120 140 Tc. CASE TEMPERATURE (C) Fig. 11 Power Vs. Temperature Derating Curve Yoo = 90 15.832 PRE = TkMz Tp= lus Vo TO SCOPE Fig. 13 Switching Time Test Circuit o (5, SOURCE CURRENT {AMPE RES) Ty = 1809C q y 2N6753 Vgp. SOURCE-TO-ORAIN VOLTAGE (VOLTS) Fig. 12 Typical Body-Drain Diode Forward Voltage VGS (on) INPUT, Vj 90% INPUT PULSE 10% VGS (otf} f ~| RISE TIME "d (on) 4 VDs (off) OUTPUT, Vo VDs (on) ton a| INPUT PULSE FALL TIME ym 10% 90%, tat Fig. 14 Switching Time Waveforms