IXTN170P10P - Zilog - Datasheet.Directory

Symbol Test Conditions Maximum Ratings

VDSS TJ= 25°C to 150°C -100 V

VDGR TJ= 25°C to 150°C, RGS = 1MΩ-100 V

VGSS Continuous ±20 V

VGSM Transient ±30 V

ID25 TC= 25°C -170 A

IDM TC= 25°C, Pulse Width Limited by TJM - 510 A

IATC= 25°C -170 A

EAS TC= 25°C 3.5 J

dv/dt IS≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 10 V/ns

PDTC= 25°C 890 W

TJ-55 ... +150 °C

TJM 150 °C

Tstg -55 ... +150 °C

VISOL 50/60 Hz, RMS t = 1 minute 2500 V~

IISOL ≤ 1mA t = 1 second 3000 V~

MdMounting Torque 1.5/13 Nm/lb.in.

Terminal Connection Torque 1.3/11.5 Nm/lb.in.

Weight 30 g

Symbol Test Conditions Characteristic Values

(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.

BVDSS VGS = 0V, ID = - 250μA -100 V

VGS(th) VDS = VGS, ID = -1mA - 2.0 - 4.0 V

IGSS VGS = ±20V, VDS = 0V ±100 nA

IDSS VDS = VDSS, VGS = 0V - 50 μA

TJ = 125°C - 250 μA

RDS(on) VGS = -10V, ID = 0.5 • ID25, Note 1 12 mΩ

PolarPTM

Power MOSFET

P-Channel Enhancement Mode

Avalanche Rated

IXTN170P10P VDSS = -100V

ID25 = -170A

RDS(on) ≤≤

≤≤

≤ 12mΩΩ

ΩΩ

Ω

Features

zInternational Standard Package

zminiBLOC, with Aluminium Nitride

Isolation

zRugged PolarPTM Process

zHigh Current Handling Capability

zFast Intrinsic Diode

zAvalanche Rated

zLow Package Inductance

Advantages

zEasy to Mount

zSpace Savings

zHigh Power Density

Applications

zHigh-Side Switches

zPush Pull Amplifiers

zDC Choppers

zAutomatic Test Equipment

zCurrent Regulators

Either Source Terminal at miniBLOC

can be used as Main or Kelvin Source.

miniBLOC, SOT-227

E153432

G

D

S

G = Gate D = Drain

S = Source

DS99975B(01/13)

SS

D

G

IXTN170P10P

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

Symbol Test Conditions Characteristic Values

(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.

gfs VDS = -10V, ID = 0.5 • ID25, Note 1 35 58 S

Ciss 12.6 nF

Coss VGS = 0V, VDS = - 25V, f = 1MHz 4190 pF

Crss 930 pF

td(on) 32 ns

tr 75 ns

td(off) 82 ns

tf 45 ns

Qg(on) 240 nC

Qgs VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 45 nC

Qgd 120 nC

RthJC 0.14 °C/W

RthCS 0.05 °C/W

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.

ISVGS = 0V -170 A

ISM Repetitive, Pulse Width Limited by TJM - 680 A

VSD IF = - 85A, VGS = 0V, Note 1 - 3.3 V

trr 176 ns

QRM 1.25 μC

IRM -14.2 A

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.

Resistive Switching Times

VGS = -10V, VDS = 0.5 • VDSS, ID = 0 .5 • ID25

RG = 1Ω (External)

IF = - 85A, -di/dt = -100A/μs

VR = - 50V, VGS = 0V

SOT-227B (IXTN) Outline

(M4 screws (4x) supplied)

IXTN170P10P

Fi g . 1. Ou tp u t C h ar acter i sti cs @ T

J

= 25ºC

-180

-160

-140

-120

-100

-80

-60

-40

-20

0-2.4-2.0-1.6-1.2-0.8-0.40.0

V

DS

- Vo lts

I

D

- Amper es

V

GS

= -15V

-10V

- 9V

- 5

V

- 6

V

- 8

V

- 7

V

Fi g . 2. Exten d ed Ou tp u t C h ar acter i sti cs @ T

J

= 25ºC

-300

-270

-240

-210

-180

-150

-120

-90

-60

-30

0-11-10-9-8-7-6-5-4-3-2-10

V

DS

- Vo lts

I

D

- Amperes

V

GS

= - 15V

-10V

- 8

V

- 6

V

- 7

V

- 9

V

- 5

V

Fi g . 3. Ou tp u t C h ar acter i sti cs @ T

J

= 125ºC

-180

-160

-140

-120

-100

-80

-60

-40

-20

0-3.5-3.0-2.5-2.0-1.5-1.0-0.50.0

V

DS

- Vo lts

I

D

- Amper es

V

GS

= - 15V

-10V

- 9V

- 6

V

- 5

V

- 7

V

- 8

V

Fig. 4. R

DS(on)

Norm alized to I

D

= - 85A Value vs.

Junction T emperature

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

R

DS(on)

- Normalized

V

GS

= - 10V

I

D

= - 170

A

I

D

= - 85

A

Fig. 5. R

DS(on)

Normalized to I

D

= - 85A Value vs.

Drain Current

0.8

1.0

1.2

1.4

1.6

1.8

2.0

-280-240-200-160-120-80-400

I

D

- A mperes

R

DS(on)

- Normalized

V

GS

= - 10V

-15V

- - - -

T

J

= 25ºC

T

J

= 125ºC

Fig. 6. Maxim um Drain Current vs.

Case Temper atu re

-180

-160

-140

-120

-100

-80

-60

-40

-20

0-50 -25 0 25 50 75 100 125 150

TC - Degrees Cen tigrad e

ID - A mpe res

IXTN170P10P

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

Fig. 7. Input Admittance

-160

-140

-120

-100

-80

-60

-40

-20

0-7.0-6.5-6.0-5.5-5.0-4.5-4.0-3.5-3.0

V

GS

- Vo lts

I

D

- Amperes

T

J

= - 40ºC

25ºC

125ºC

Fig. 8. Transconductance

0

10

20

30

40

50

60

70

80

90

100

-160-140-120-100-80-60-40-200

I

D

- Amperes

g

f s

- Siemens

T

J

= - 40ºC

125ºC

25ºC

Fig. 9. Forward Voltage Drop of Intrinsic Diode

-300

-270

-240

-210

-180

-150

-120

-90

-60

-30

0-4.5-4.0-3.5-3.0-2.5-2.0-1.5-1.0-0.5

V

SD

- Vo lts

I

S

- Amperes

T

J

= 125ºC

T

J

= 25ºC

Fi g . 10. Gate C h ar ge

-10

-9

-8

-7

-6

-5

-4

-3

-2

-1

00 20 40 60 80 100 120 140 160 180 200 220 240

Q

G

- NanoCoulombs

V

GS

- Vol ts

V

DS

= - 50V

I

D

= - 85A

I

G

= -1mA

Fig. 11. Capacitance

100

1,000

10,000

100,000

-40-35-30-25-20-15-10-50

V

DS

- Vo lts

Capacitance - PicoFarads

f

= 1 MHz

Ciss

Crss

Coss

Fi g. 12. Fo r ward -B i as Safe Operati n g Area

1

10

100

1,000

110100

V

DS

- V olt s

I

D

- Amperes

T

J

= 15 0ºC

T

C

= 25ºC

Single Pulse

25µs

1ms 100µs

R

DS(on)

Limit 10ms

DC, 100ms

-

----

-

IXTN170P10P

Fi g . 13. Ma xi mu m Tr ansi en t Thermal I mp ed an ce

0.001

0.01

0.1

1

0.00001 0.0001 0.001 0.01 0.1 1 10

Pulse Width - Seconds

Z(th)JC - º C / W