Semiconductor Components Industries, LLC, 1999
February, 2000 – Rev. 1 1Publication Order Number:
MAC15A6FP/D
MAC15A6FP, MAC15A8FP,
MAC15A10FP
Preferred Device
Triacs
Silicon Bidirectional Thyristors
Designed primarily for full-wave ac control applications, such as
solid-state relays, motor controls, heating controls and power supplies;
or wherever full-wave silicon gate controlled solid-state devices are
needed. Triac type thyristors switch from a blocking to a conducting
state for either polarity of applied main terminal voltage with positive
or negative gate triggering.
•Blocking Voltage to 800 Volts
•All Diffused and Glass Passivated Junctions for Greater Parameter
Uniformity and Stability
•Small, Rugged, Thermowatt Construction for Low Thermal
Re sis t anc e, Hig h H eat Dissipation and Durability
•Gate Triggering Guaranteed in Four Modes
• Indicates UL Registered — File #E69369
•Device Marking: Logo, Device Type, e.g., MAC15A6FP, Date Code
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
Peak Repetitive Off–State Voltage(1)
(TJ = –40 to +125°C, Sine Wave 50 to
60 Hz, Gate Open) MAC15A6FP
MAC15A8FP
MAC15A10FP
VDRM,
VRRM 400
600
800
Volts
On-State RMS Current (TC = +80°C)(2)
Full Cycle Sine W ave 50 to 60 Hz
(TC = +95°C)
IT(RMS) 15
12
Amps
Peak Nonrepetitive Surge Current
(One Full Cycle Sine W ave,
60 Hz, TC = +80°C)
Preceded and followed by rated current
ITSM 150 Amps
Circuit Fusing (t = 8.3 ms) I2t 93 A2s
Peak Gate Power
(TC = +80°C, Pulse Width = 2.0 µs) PGM 20 Watts
Average Gate Power
(TC = +80°C, t = 8.3 ms) PG(AV) 0.5 Watt
Peak Gate Current
(Pulse Width
v
1.0 µsec; TC = 80°C) IGM 2.0 Amps
Peak Gate Voltage
(Pulse Width
v
1.0 µsec; TC = 80°C) VGM 10 Volts
RMS Isolation Voltage (TA = 25°C,
Relative Humidity
p
20%) () V(ISO) 1500 Volts
Operating Junction Temperature TJ–40 to
+125 °C
Storage Temperature Range Tstg –40 to
+150 °C
(1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
(2) The case temperature reference point for all TC measurements is a point on
the center lead of the package as close as possible to the plastic body.
ISOLATED TRIAC
15 AMPERES RMS
400 thru 800 VOLTS
Preferred devices are recommended choices for future use
and best overall value.
Device Package Shipping
ORDERING INFORMATION
MAC15A6FP ISOLATED TO220FP 500/Box
http://onsemi.com
MAC15A8FP ISOLATED TO220FP 500/Box
MT1
G
MT2
ISOLATED TO–220 Full Pack
CASE 221C
STYLE 3
123
PIN ASSIGNMENT
1
2
3
Main Terminal 2
Gate
Main Terminal 1
MAC15A10FP ISOLATED TO220FP 500/Box
()
MAC15A6FP, MAC15A8FP, MAC15A10FP
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2
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case RθJC 2.0 °C/W
Thermal Resistance, Case to Sink RθCS 2.2 (typ) °C/W
Thermal Resistance, Junction to Ambient RθJA 60 °C/W
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL260 °C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current TJ = 25°C
(VD = Rated VDRM, VRRM; Gate Open) TJ = 125°CIDRM,
IRRM —
——
—10
2.0 µA
mA
ON CHARACTERISTICS
Peak On-State Voltage(1)
(ITM =
"
21 A Peak VTM — 1.3 1.6 Volts
Gate Trigger Current (Continuous dc)
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+)
IGT
—
—
—
—
—
—
—
—
50
50
50
75
mA
Gate Trigger Voltage (Continuous dc)
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+)
VGT
—
—
—
—
0.9
0.9
1.1
1.4
2.0
2.0
2.0
2.5
Volts
Gate Non–Trigger Voltage
(Main Terminal Voltage = Rated VDRM, RL = 100 Ω, TJ = +110°C)
All 4 Quadrants
VGD
0.2 — —
Volts
Holding Current
(Main Terminal Voltage = 12 Vdc, Gate Open,
Initiating Current =
"
200 mA)
IH— 6.0 40 mA
Turn-On Time
(VD = Rated VDRM, ITM = 17 A, IGT = 120 mA,
Rise T ime = 0.1 µs, Pulse Width = 2 µs)
tgt — 1.5 — µs
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Commutation Voltage
(VD = Rated VDRM, VRRM, ITM = 21 A, Commutating di/dt = 7.6 A/ms,
Gate Unenergized, TC = 80°C)
dv/dt(c) — 5.0 — V/µs
(1) Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.
MAC15A6FP, MAC15A8FP, MAC15A10FP
http://onsemi.com
3
+ Current
+ Voltage
VTM
IH
Symbol Parameter
VDRM Peak Repetitive Forward Off State Voltage
IDRM Peak Forward Blocking Current
VRRM Peak Repetitive Reverse Off State Voltage
IRRM Peak Reverse Blocking Current
Voltage Current Characteristic of Triacs
(Bidirectional Device)
IDRM at VDRM
on state
off state
IRRM at VRRM
Quadrant 1
MainTerminal 2 +
Quadrant 3
MainTerminal 2 – VTM
IH
VTM Maximum On State Voltage
IHHolding Current
MT1
(+) IGT
GATE
(+) MT2
REF
MT1
(–) IGT
GATE
(+) MT2
REF
MT1
(+) IGT
GATE
(–) MT2
REF
MT1
(–) IGT
GATE
(–) MT2
REF
–
MT2 NEGATIVE
(Negative Half Cycle)
MT2 POSITIVE
(Positive Half Cycle)
+
Quadrant III Quadrant IV
Quadrant II Quadrant I
Quadrant Definitions for a Triac
IGT – + IGT
All polarities are referenced to MT1.
With in–phase signals (using standard AC lines) quadrants I and III are used.
MAC15A6FP, MAC15A8FP, MAC15A10FP
http://onsemi.com
4
TYPICAL CHARACTERISTICS
Figure 1. RMS Current Derating
Figure 2. On–State Power Dissipation
Figure 3. Typical Gate Trigger Voltage
Figure 4. Typical Gate Trigger Current
Figure 5. Maximum On–State Characteristics
130
120
110
100
90
80 0246810121416
IT(RMS), RMS ON–STATE CURRENT (AMP)
T
C
,
C
AS
E
T
E
M
PE
RAT
U
R
E
(
C
)
°
30°
125°C
60°
90°
dc
20
16
12
8
4
00246810121416
IT(RMS), RMS ON–STATE CURRENT (AMP)
30°
α = 180°
dc
TJ = 125°C
60°
90°
120°
3
2
1
0.7
0.3
–60 –40 –20 0 20 40 60 80 100
TJ, JUNCTION TEMPERATURE (°C)
0.5
120 140
OFF–STATE VOLTAGE = 12 Vdc
ALL MODES
VGTM
,
G
AT
E
TRI
GGE
R
VOL
TA
GE
(
NO
RMA
L
I
ZED
)
3
2
1
0.7
0.5
0.3
–60 –40 –20 0 20 40 60 80 100
TJ, JUNCTION TEMPERATURE (°C) 120 140
OFF–STATE VOLTAGE = 12 Vdc
ALL MODES
IGTM, GATE TRIGGER CURRENT (NORMALIZED
)
100
70
50
30
20
0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6
vT, INSTANTANEOUS ON–STA TE VOLTAGE (VOLTS)
TJ = 25°C
4 4.4
10
7
5
3
2
1
0.7
0.5
0.3
0.2
0.1
125°C
150° to 180°
P
,
A
VE
RA
GE POWE
R
D
ISSI
P
ATI
ON
(
W
ATTS)
D(AV)
i , INSTANT ANEOUS FORWARD CURRENT (AMP)
F
α = CONDUCTION ANGLE
α
α
α = CONDUCTION ANGLE
α
α
MAC15A6FP, MAC15A8FP, MAC15A10FP
http://onsemi.com
5
Figure 6. Typical Holding Current Figure 7. Maximum Nonrepetitive Surge Current
Figure 8. Thermal Response
3
2
1
0.7
0.5
0.3
–60 –40 –20 0 20 40 60 80 100
TJ, JUNCTION TEMPERATURE (°C) 120 140
GATE OPEN
APPLIES TO EITHER DIRECTION
IH, HOLDING CURRENT (NORMALIZED)
300
200
100
70
50
301235
NUMBER OF CYCLES 710
SURGE IS PRECEDED AND FOLLOWED BY RATED CURRENT
TC = 80°C
f = 60 Hz
ITSM, PEAK SURGE CURRENT (AMP)
1
0.5
0.1
0.05
0.02
0.01
0.1 0.2 0.5 t, TIME (ms)
1
ZθJC(t) = r(t) • RθJC
0.2
2 5 10 20 50 100 200 500 1 k 2 k 5 k 10 k
r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED)
MAC15A6FP, MAC15A8FP, MAC15A10FP
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6
PACKAGE DIMENSIONS
ISOLATED TO–220 Full Pack
CASE 221C–02
ISSUE C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. LEAD DIMENSIONS UNCONTROLLED WITHIN
DIMENSION Z.
–Y–
–B– –T–
Q
P
A
K
H
Z
G
L
F
D3 PL
M
B
M
0.25 (0.010) Y
E
NS
J
R
C
SEATING
PLANE
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.680 0.700 17.28 17.78
B0.388 0.408 9.86 10.36
C0.175 0.195 4.45 4.95
D0.025 0.040 0.64 1.01
E0.340 0.355 8.64 9.01
F0.140 0.150 3.56 3.81
G0.100 BSC 2.54 BSC
H0.110 0.155 2.80 3.93
J0.018 0.028 0.46 0.71
K0.500 0.550 12.70 13.97
L0.045 0.070 1.15 1.77
N0.049 ––– 1.25 –––
P0.270 0.290 6.86 7.36
Q0.480 0.500 12.20 12.70
R0.090 0.120 2.29 3.04
S0.105 0.115 2.67 2.92
Z0.070 0.090 1.78 2.28
123
STYLE 3:
PIN 1. MT 1
2. MT 2
3. GATE
MAC15A6FP, MAC15A8FP, MAC15A10FP
http://onsemi.com
7
Notes
MAC15A6FP, MAC15A8FP, MAC15A10FP
http://onsemi.com
8
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