PARAMETER TEST CONDITIONS SYMBOL MIN TYP MAX UNITS
Peak Sensitivity Wavelength DPS — 880 — nm
Wavelength Sensitivity Range DSR 400 — 1000 nm
Reception Angle 0— 120 — Deg.
Collector Emitter Dark Current VCE = 25 V, Ee = 0 ID— — 200 nA
Collector Emitter Breakdown IC= 1 mA BVCEO 30 — — V
Emitter Collector Breakdown IE= 100 µA BVECO 5——V
On-State Collector Current Ee= 0.1 mW/cm2(4), VCE = 5 V IC (ON) 16 — — µA
Saturation Voltage Ee= 0.5 mW/cm2(4), IC= 0.05 mA VCE (SAT) — — 0.3 V
Rise Time VCC = 5 V, RL= 100 1tr—8—µs
Fall Time IC= 1 mA tf—8—µs
ELECTRICAL / OPTICAL CHARACTERISTICS (TA=25°C)
NOTES
1. Derate power dissipation linearly
2.2 mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols
are recommended as cleaning
agents.
4. D
=
940 nm.
Parameter Symbol Rating Unit
Operating Temperature TOPR -55 to +100 °C
Storage Temperature TSTG -55 to +100 °C
Soldering Temperature (Flow)(2,3) TSOL-F 260 for 10 sec °C
Collector Emitter Voltage VCE 35 V
Emitter Collector Voltage VEC 5V
Collector Current IC15 mA
Power Dissipation(1) PD165 mW
ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise specified)
PACKAGE DIMENSIONS
0.118 (3.0)
0.102 (2.6)
0.091 (2.3)
0.083 (2.1) 0.035 (0.9)
0.028 (0.7)
0.083 (2.1)
0.067 (1.7)
0.134 (3.4)
0.118 (3.0)
0.024 (0.6)
0.016 (0.4) 0.007 (.18)
0.005 (.12)
0.043 (1.1)
0.020 (0.5)
0.041 (0.1)
0.094 (2.4)
COLLECTOR
NOTES:
1. Dimensions for all drawings are in inches (millimeters).
2. Tolerance of ± .010 (.25) on all non nominal dimensions
unless otherwise specified.
FEATURES
• Surface Mount PLCC-2 Package
• Wide Reception Angle, 120°
• High Sensitivity
• Phototransistor Output
• Matched Emitter: QEB421
SCHEMATIC
EMITTER
COLLECTOR
QSB320
SURFACE MOUNT SILICON
INFRARED PHOTOTRANSISTOR
2001 Fairchild Semiconductor Corporation
DS300386 2/26/01 1 OF 3 www.fairchildsemi.com
QSB320
SURFACE MOUNT SILICON
INFRARED PHOTOTRANSISTOR
Fig.1 Dark Current Vs. Ambient Temperature
TA-Ambient Temperature ( oC)
40 60 80 100
ID-Normalized Dark Current
10-1
100
101
102
103
VCE=10V
VCE=25V
Normalized to:
VCE=25V
TA=25oC
Fig.2 Dark Current Vs. Collector Emitter Voltage
VCE-Collector Emitter Voltage (V)
0 102030405060
I
D
-Dark Current (nA)
0.1
1
10
Fig4. Light Current Vs. Ambient Temperature
TA-Ambient Temperature ( oC)
-40 -20 0 20 40 60 80 100
I
L
-Normalized Light Current
0.1
1
10
V
2
T
Normalized to:
CE=5V
Ie=0.5mW/cm
A=25oC
Fig.3 Light Current Vs. Collector to Emitter Voltage
VCE-Collector-emitter Voltage (V)
0.1 1 10
IL-Normalized Light Current
0.001
0.01
0.1
1
10
Normalized to:
VCE=5V
Ie=0.5mW/cm2
TA=25oC
Ie=1mW/cm2
Ie=0.5mW/cm2
Ie=0.2mW/cm2
Ie=0.1mW/cm2
www.fairchildsemi.com 2 OF 3 2/26/01 DS300386
QSB320
SURFACE MOUNT SILICON
INFRARED PHOTOTRANSISTOR
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF
OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD
SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical
implant into the body,or (b) support or sustain life,
and (c) whose failure to perform when properly
used in accordance with instructions for use provided
in labeling, can be reasonably expected to result in a
significant injury of the user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
DS300386 2/26/01 3 OF 3 www.fairchildsemi.com
