2008. 5. 13 1/2
SEMICONDUCTOR
TECHNICAL DATA
MBRF30100CT
SCHOTTKY BARRIER TYPE DIODE
Revision No : 2
SWITCHING MODE POWER SUPPLY APPLICATION.
CONVERTER & CHOPPER APPLICATION.
FEATURES
·Average Output Rectified Current
: IO=30A.
·Repetitive Peak Reverse Voltage
: VRRM=100V.
·Fast Reverse Recovery Time : trr=35ns.
MAXIMUM RATING (Ta=25℃)
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Peak Forward Voltage (Note) VFM IFM=15A - - 0.85 V
Repetitive Peak
Reverse Current (Note) IRRM VRRM=Rated - - 150 ㎂
Reverse Recovery Time (Note) trr IFM=1.0A, di/dt=-30A/㎲- - 35 ns
Thermal Resistance (Note) Rth(j-c) Juction to Case - - 2.5 ℃/W
CHARACTERISTIC SYMBOL RATING UNIT
Repetitive Peak Reverse Voltage VRRM 100 V
Average Output Rectified
Current (Note) IO30 A
Peak One Cycle Surge Forward
Current (Non-Repetitive 60Hz) IFSM 350 A
Junction Temperature Tj-40~150 ℃
Storage Temperature Range Tstg -55~150 ℃
Note : average forward current of centertap full wave connection.
Note : A value of one cell