IRLR8103VTRL - International Rectifier

• N-Channel Application-Specific MOSFETs

• Ideal for CPU Core DC-DC Converters

• Low Conduction Losses

• Low Switching Losses

• Minimizes Parallel MOSFETs for high current

applications

•100% RG Tested

Description

This new device employs advanced HEXFET Power

MOSFET technology to achieve an unprecedented

balance of on-resistance and gate charge. The reduced

conduction and switching losses make it ideal for high

efficiency DC-DC converters that power the latest

generation of microprocessors.

The IRLR8103V has been optimized for all parameters

that are critical in synchronous buck converters including

RDS(on), gate charge and Cdv/dt-induced turn-on immunity .

The IRLR8103V offers an extremely low combination of

Qsw & RDS(on) for reduced losses in both control and

synchronous FET applications.

The package is designed for vapor phase, infra-red,

convection, or wave soldering techniques. Power

dissipation of greater than 2W is possible in a typical

PCB mount application.

DEVICE CHARACTERISTICS

10/22/04

D-Pak

IRLR8103V

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IRLR8103V

DS(on)

7.9 m

Ω

QG27 nC

12 nC

QOSS 29nC

Absolute Maximu m Ratin gs

Symbol Units

VGS

Continuous Drain or Source Current

TC = 25°C

(VGS > 10V) TC= 90°C IDM

TC = 25°C

TC = 90°C TJ , TSTG °C

Thermal Resistance

Symbol Typ. Max. Units

RθJA ––– 50

RθJC ––– 1.09 °C/W

PD W

IRLR8103V

363

±20

363

115

-55 to 150

Powe r Dissipation

e

Parameter

Maxim um Junct ion- to -Am bie nt

Maxim um Junct ion- to -Cas e

Junction & Storage Temperature Range

Continuous Source Current (Body Diode)

Pulsed Source Current

Parameter

Drain- Sour ce Volt age

Gate-Source Voltage

Puls ed Drain Cu rrent

PD-94021C

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IRLR8103V

Notes:

Repetitive rating; pulse width limited by max. junction temperature.

Pulse width ≤ 400 µs; duty cycle ≤ 2%.

When mounted on 1 inch square copper board, t < 10 sec.

T yp = measured - Qoss

 Typical values of RDS(on) measured at VGS = 4.5V, QG, QSW and QOSS measured at VGS = 5.0V, IF = 15A.

 Rθ is measured at TJ approximately 90°C

Electrical Char act eri st ics

Parameter Symbol Min Typ Max Units

Drain-to-Source Breakdown Voltage BVDSS 30 ––– ––– V

Static Drain-Source RDS(on) ––– 6.9 9.0

On-Resistance ––– 7.9 10.5

Gate Threshold Voltage VGS(th) 1.0 ––– 3.0 V

Drain-to-Source Leakage Current IDSS ––– ––– 50 µA

––– ––– 20

––– ––– 100

Gate-Source Leakage Current IGSS ––– ––– ±100 nA

Total Gate Charge, Control FET QG––– 27 –––

Total Gate Charge, Synch FET QG––– 23 –––

Pre-Vth Gate-Source Charge QGS1 ––– 4.7 –––

Post-Vth Gate-Source Charge QGS2 ––– 2.0 –––

Gate to Drain Charge QGD ––– 9.7 –––

Switch Charge (Q gs2 + Qgd)Q

SW ––– 12 –––

Output Charge QOSS ––– 29 –––

Gate Resistance RG0.8 ––– 3.1 Ω

Turn-On Delay Time td(on) ––– 10 –––

Rise Time tr––– 9 –––

Turn-Off Delay Time td(off) ––– 24 –––

Fall Time tf––– 18 –––

Input Capacitance Ciss ––– 2672 –––

Output Capacitance Coss ––– 1064 –––

Reverse Transfer Capacitance Crss ––– 109 –––

Source-Drain Rating & Characteristics

Parameter Symbol Min Typ Max Units

Diode Forward Voltage VSD

–––

0.9

1.3

Reverse Recovery Charge

Qrr ––– 103 ––– nC

Reverse Recovery Charge Qrr(s) ––– 96 ––– nC

(with Parallel Schottky)

VGS = 5V, ID = 15A, VDS = 16V

VDS = 24V, VGS = 0

VDD = 16V

VDS = 24V, VGS = 0, TJ = 100°C

Conditions

VGS = 0V, ID = 250µA

VGS = 10V, ID = 15A

Conditions

di/dt = 700A/µs , (with 10BQ040)

VDS= 16V, VGS = 0V, IF = 15A

di/dt ~ 700A/µs

VDS = 16V, VGS = 0V, IF = 15A

IS = 15A

, VGS = 0V

VGS = 4.5V, ID = 15A

mΩ

µA

VDS = 16V, VGS = 0

VDS = 16V, ID = 15A

VGS = 5V, VDS < 100mV

VDS = VGS, ID = 250µA

VDS = 30V, VGS = 0V

VGS = ± 20V

pF VGS = 16V, VGS=0

ID = 15A

VGS = 5.0V

Clamped Inductive Load

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IRLR8103V

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature

100

1000

0.1 1 10 100

20µs PU LSE WIDTH

T = 25 C

J°

TOP

BOTTOM

VGS

15V

10V

7.0V

5.5V

4.5V

4.0V

3.5V

2.7V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

2.7V

100

1000

0.1 1 10 100

20µs PU LSE WIDTH

T = 150 C

J°

TOP

BOTTOM

VGS

15V

10V

7.0V

5.5V

4.5V

4.0V

3.5V

2.7V

V , Drain -to-Sou rce Vol tage (V)

I , Drain-to-Source Current (A)

2.7V

-60 -40 -20 020 40 60 80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

T , Junction Temperatur e ( C)

R , Drain-to-Source On Resistance

(Normalized)

DS(on)

V =

I =

10V

15A

100

1000

2.0 3.0 4.0 5.0 6.0 7.0

V = 15V

20µs PULS E WI DTH

V , Gate-to-Source Voltage (V)

I , Drain-to-Source Current (A)

T = 25 C

J°

T = 150 C

J°

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IRLR8103V

Fig 7. Typical Source-Drain Diode

Forward Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage Fig 8. Maximum Safe Operating Area

1 10 100

1000

2000

3000

4000

5000

V , Drain-to-Source Vol tage (V)

C, Capaci tance (pF)

0V,

f = 1M Hz

+ C

C SHORTED

iss gs gd , ds

rss gd

oss ds gd

Ciss

Coss

Crss

0 5 10 15 20 25 30

Q , Total Gate Charge (nC)

V , Gat e-to- Source Volt age ( V)

I =

D15A

V = 15V

V = 24V

100

1000

10000

1 10 100

OPERATION IN THIS AREA LIMITED

BY RDS(on)

Single Pulse

T = 150 C

= 25 C

°°

V , Drain-to-Source Voltage (V)

I , Dr ain Current ( A)I , Dr ain Current ( A)

10us

100us

1ms

10ms

0.1

100

1000

0.0 0.4 0.8 1.2 1.6 2.0 2.4

V ,Source-to- Drain Volt age (V)

I , Reverse D rain Curr ent ( A)

V = 0 V

T = 25 C

J°

T = 150 C

J°

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IRLR8103V

Fig 9. Maximum Drain Current Vs.

Case Temperature

Fig 10a. Switching Time Test Circuit

GS t

d(on)

d(off)

Fig 10b. Switching Time Waveforms

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

VDS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

VGS

D.U.T.

10V

25 50 75 100 125 150

100

T , Case Temperature( C)

I , Drai n Curr ent (A)

LIMITED BY PACKAGE

Fig 10a. Switching Time Test Circuit

GS t

d(on)

d(off)

VDS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

VGS

D.U.T.

10V

VDD

0.01

0.1

0.00001 0.0001 0.001 0.01 0.1

Notes:

1 . Duty factor D = t / t

2. Peak T =P x Z + T

1 2

JDM thJC C

t , Rectangular Pulse Duration (sec)

Thermal Response(Z )

thJC

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

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IRLR8103V

Fig 13. On-Resistance Vs. Gate Voltage

Fig 12. On-Resistance Vs. Drain Current

Fig 14a&b. Basic Gate Charge Test Circuit and Waveform

D.U.T. V

3mA

.3µF

50KΩ

.2µF

12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

VGS

Charge

0 50 100 150 200 250 300 350

ID , Drain Current ( A )

0.006

0.008

0.010

0.012

0.014

0.016

RDS ( on ) , Drain-to-Source On Resistance ( Ω )

VGS = 4.5V

VGS = 10V

0.0 2.0 4.0 6.0 8.0

VGS, Gate -to -Source Voltage (V)

0.006

0.008

0.010

0.012

0.014

RDS(on), Drain-to -Source On Resistance (Ω)

ID = 15A

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IRLR8103V

D-Pak (TO-252AA) Package Outline

Dimensions are shown in millimeters (inches)

6.73 (.265)

6.35 (.250)

- A -

1 2 3

6.22 ( .245)

5.97 ( .235)

- B -

3X 0.89 (.035)

0.64 (.025)

0.25 (. 010) M A M B

4.57 (. 180)

2.28 (.090)

2X 1.14 (.045)

0.76 (.030)

1.52 (. 060)

1.15 (. 045)

.02 (.040)

.64 (.025)

5.46 (.215)

5.21 (.205) 1. 27 (. 050 )

0. 88 (.03 5 )

2.38 ( .094)

2.19 ( .086) 1.14 (.045)

0.89 (.035)

0.58 (.023)

0.46 (.018)

6.45 (.245)

5.68 (.224)

0.51 (.020)

MIN.

0.58 (.023)

0.46 (.018)

LEAD ASSIGNMENTS

1 - GATE

2 - DRAIN

3 - SOURCE

4 - DRAIN

10.42 (.410)

9.40 (.370)

NOTES:

1 DI MENSIONING & TOLERANCI NG PER ANSI Y14.5M, 1982

2 CONTROLLING DIMENSION : INCH.

3 CONFORMS TO JEDEC OUTLINE TO-252AA.

4 DIMENSIONS SHOWN ARE BEFORE SOLDER DIP,

SOLDER DIP MAX. +0.16 (.006).

D-Pak (TO-252AA) Part Marking Information

INTERNATIONAL

LOGO

RECTIFIER

3412

IRFR120

916A

LOT CODE

AS S E MB LY

EXAMPLE: WIT H AS SEMBLY

THIS IS AN IRFR120

YEAR 9 = 1999

DATE CODE

LINE A

WEEK 16

IN THE ASSEMBLY LINE "A"

ASSEMBLED ON WW 16, 1999

LOT CODE 1234

PART N UMBER

Note: "P" in assembly line

po sition ind icates "Lead-Free"

P916A

IRFR120

LOT CODE

AS S E MB LY

INTERNATIONAL

RECTIFIER

LOGO 12

PART NUMBER

WEEK 16

A = AS S EMBLY S IT E CODE

DATE CODE

YEAR 9 = 1999

34 P = DES IGNAT E S LE AD-F RE E

PRODUCT ( OPTION AL)

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IRLR8103V

D-Pak (TO-252AA) Tape & Reel Information

Dimensions are shown in millimeters (inches)

16.3 ( .641 )

15.7 ( .619 )

8.1 ( .318 )

7.9 ( .312 )

12.1 ( .476 )

11.9 ( .469 ) FEED DIRECTION FEED DIRECTION

1 6.3 ( .641

)

1 5.7 ( .619

)

TRR TRL

OTES :

. CONTROLLING DIMENSION : MILLIMETER.

. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).

. OUTLINE CONFORMS TO EIA-481 & EIA-541.

NOTES :

1. OUTLINE CONFORMS TO EIA-481.

16 mm

13 INCH

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information. 10/04

Data and specifications subject to change without notice.

This product has been designed and qualified for the Industrial market.

Qualification Standards can be found on IR’s Web site.

Note: For the most current drawings please refer to the IR website at:

http://www.irf.com/package/