Doc No. TT4-EA-13115 Revision. 2 Product Standards MOS FET MTM232270LBF MTM232270LBF Silicon N-channel MOS FET Unit : mm For switching MTM13227 in SMini3 type package 2.0 0.3 Features 0.15 3 1.25 2.1 Low drain-source On-state resistance : RDS(on) typ = 85 m (VGS = 4.0 V) Low drive voltage: 2.5 V drive Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL : Level 1 compliant) 1 2 Marking Symbol : ET 0.9 (0.65)(0.65) 1.3 Packaging Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard) 1. 2. 3. Absolute Maximum Ratings Ta = 25 C Drain-source Voltage Gate-source Voltage Drain current Peak drain current *1 Power dissipation *2 Channel temperature Operating ambient temperature Storage Temperature Range Note) VDS VGS ID IDp PD Tch Topr Tstg 20 10 2.0 8 500 150 -40 to + 85 -55 to +150 V A A mW C C C Panasonic JEITA Code Gate Source Drain SMini3-G1-B SC-70 SOT-323 Internal Connection (D) 3 *1 Pulse width 10 s, Duty cycle 1 % *2 Measuring on ceramic board at 40 38 0.1 mm Absolute maximum rating PD without heat sink shall be made 150 mW. 1 (G) 2 (S) Pin Name 1. 2. 3. Gate Source Drain Page 1 of 6 Established : 2011-03-09 Revised : 2013-09-02 Doc No. TT4-EA-13115 Revision. 2 Product Standards MOS FET MTM232270LBF Electrical Characteristics Ta = 25 C 3 C Drain-source surrender voltage Drain-source cutoff current Gate-source cutoff current Gate threshold voltage VDSS IDSS IGSS Vth ID = 1 mA, VGS = 0 V VDS = 20 V, VGS = 0 V VGS = 8 V, VDS = 0 V ID = 1.0 mA, VDS = 10 V RDS(ON)1 ID = 1 A, VGS = 4 V Drain-source ON resistance *1 RDS(ON)2 ID = 0.5 A, VGS = 2.5 V ID = 1 A, VDS = 10 V, f = 1 kHz |Yfs| Forward transfer admittance *1 Short-circuit input capacitance (Common source) Ciss Short-circuit output capacitance (Common source) VDS = 10 V, VGS = 0, f = 1 MHz Coss Reverse transfer capacitance (Common source) Crss 20 0.4 0.85 85 100 3.0 10 10 1.3 110 150 V A A V m S 290 26 20 pF Turn-on Time *2 ton VDD = 10 V, VGS = 0 to 4 V ID = 1 A 12 ns Turn-off Time *2 toff VDD = 10 V, VGS = -4 to 0 V ID = 1 A 60 ns Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors. 2. *1 Pulse test : Pulse width 10 sDuty cycle 1 % *2 Turn-on and Turn-off test circuit Page 2 of 6 Established : 2011-03-09 Revised : 2013-09-02 Doc No. TT4-EA-13115 Revision. 2 Product Standards MOS FET MTM232270LBF VCC = 10 V *2 Turn-on and Turn-off test circuit ID = 1 A RL = 10 Vin Vout 0V PW = 10 s D.C. 1 % -4 V D G Vin 50 S 90 % Vin 10 % 90 % Vout 10 % t(on) t(off) Page 3 of 6 Established : 2011-03-09 Revised : 2013-09-02 Doc No. TT4-EA-13115 Revision. 2 Product Standards MOS FET MTM232270LBF Technical Data ( reference ) ID - VDS ID - VGS 0.15 2 2.5 V 1.5 Drain current ID (A) Drain current ID (A) VGS = 4.0 V 2.0 V 1 1.5 V 0.5 Ta = 85 0.1 25 0.05 -40 -40 0 0 0 0.1 0.2 0.3 0 0.5 Drain-source voltage VDS (V) 2 RDS(on) - ID 0.5 1000 Drain source On-state Resistance RDS(on) (m) Drain-source Voltage VDS (V) 1.5 Gate-source voltage VGS (V) VDS - VGS 0.4 0.3 ID = 1.0 A 0.2 0.5 A 0.1 0.25 A 0 0 1 2 3 4 5 2.5 V 100 VGS = 4.0 V 10 6 0.1 1 Gate-source Voltage VGS (V) Drain current ID (A) Dynamic Input/Output Characteristics Capacitance - VDS 1000 Gate-source Voltage VGS (V) 10000 Capacitance C (pF) 1 Ciss 100 Coss 10 Crss 1 0.1 1 10 Drain-source Voltage VDS (V) 100 5 4 VDD = 10 V 3 2 1 0 0 1 2 3 4 Total Gate Charge Qg (nC) Page 4 of 6 Established : 2011-03-09 Revised : 2013-09-02 Doc No. TT4-EA-13115 Revision. 2 Product Standards MOS FET MTM232270LBF Technical Data ( reference ) RDS(on) - Ta 1.5 150 Drain-source On-resistance RDS(on) (m) Gate-source Threshold Voltage Vth (V) Vth - Ta 1 0.5 VGS = 2.5 V 100 4.0 V 50 0 -50 0 -50 0 50 100 0 150 50 100 150 Temperature () Temperature () PD - Ta Total Power Dissipation PD (W) 1 0.8 0.6 0.4 0.2 0 0 50 100 150 Temperature Ta (C) Safe Operating Area 1000 100 IDp = 8 A Drain current ID (A) Thermal Resistance Rth (C/W) Rth - tsw 100 10 1 1 ms 10 ms 0.1 0.01 Operation in this area is limited by RDS(on) 100 ms Ta = 25 C, Glass epoxy board (25.4x25.4xt0.8mm) coated with copper foil, 1s DC 2 which has more than 300mm . 10 0.1 1 10 100 Pulse Width tsw (s) 1000 0.001 0.01 0.1 1 10 100 Drain-source Voltage VDS (V) Page 5 of 6 Established : 2011-03-09 Revised : 2013-09-02 Doc No. TT4-EA-13115 Revision. 2 Product Standards MOS FET MTM232270LBF SMini3-G1-B 2.00.2 +0.10 0.15-0.05 +0.1 0.3 0.0 (8) 2 1.30.1 0.20.1 (0.65) (0.65) (0.425) 1 2.10.1 1.250.10 3 +0.2 0.9-0.1 0 to 0.1 0.90.1 (10) Land Pattern (Reference) (Unit : mm) 1.9 0.8 0.9 1.3 Page 6 of 6 Established : 2011-03-09 Revised : 2013-09-02 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. 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