Product Standards
MOS FET
MTM232270LBF
Low drive voltage: 2.5 V drive
Gate
Source
Drain
Absolute Maximum Ratings Ta = 25 C
Note) *1 Pulse width ≦10 s, Duty cycle ≦1 %
*2 Measuring on ceramic board at 40 38 0.1 mm
Absolute maximum rating PD without heat sink shall be made 150 mW.
Gate
Source
Drain
Page
Unit : mm
SOT-323Code
JEITA
1of6
SC-70
2.
3.
1.
MTM232270LBF
Silicon N-channel MOS FET
Features
Low drain-source On-state resistance : RDS(on) typ = 85 m
(VGS = 4.0 V)
For switching
MTM13227 in SMini3 type package
Halogen-free / RoHS compliant
Panasonic SMini3-G1-B
(EU RoHS / UL-94 V-0 / MSL : Level 1 compliant)
Marking Symbol
:
1.
2.
3.
pcs / reel (standard)
記号 定格 単位
Storage Temperature Range Tstg -55 to +150 C
Internal Connection
Pin Name
2.0
8
500
150 C
+ 85 C
ET
Drain current ID A
Drain-source Voltage VDS 20 V
項目
Packaging
A
Power dissipation *2 PD mW
Peak drain current *1 IDp
Embossed type (Thermo-compression sealing)
:
3 000
-40 to
Gate-source Voltage VGS
Channel temperature Tch
Operating ambient temperature Topr
±10
2.1
2.0
0.9
1.25
1.3
0.3
(0.65)
0.15
12
3
(0.65)
1
(G) 2
(S)
(D)
3
Doc No.
TT4-EA-13115
Revision.
2
Established
:
2011-03-09
Revised
:
2013-09-02
Product Standards
MOS FET
MTM232270LBF
Electrical Characteristics Ta = 25 C 3 C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
2. *1 Pulse test : Pulse width ≦ 10 μs、Duty cycle ≦ 1 %
*2 Turn-on and Turn-off test circuit
Page 2 of 6
最小 標準 最大 単位項目 記号 条件
10 VGS =
8 V, VDS = 0 V
Drain-source surrender voltage VDSS 20
Drain-source cutoff current IDSS
Gate-source cutoff current IGSS
85 110
Gate threshold voltage Vth 0.4
RDS(ON)2 100 150
ID = 1 A, VDS = 10 V, f = 1 kHz
Forward transfer admittance *1 |Yfs| 3.0
Reverse transfer capacitance (Common source) Crss
Short-circuit input capacitance (Common source) Ciss
Turn-off Time *2
20
290
Short-circuit output capacitance (Common source) Coss 26
ID = 1 mA, VGS = 0 V V
VDS = 20 V, VGS = 0 V μA10
μA
ID = 1.0 mA, VDS = 10 V V
Drain-source ON resistance *1 ID = 1 A, VGS = 4 V m
ID = 0.5 A, VGS = 2.5 V
0.85 1.3
RDS(ON)1
S
Turn-on Time *2 ton VDD = 10 V, VGS = 0 to 4 V
ID = 1 A 12 ns
pF VDS = 10 V, VGS = 0, f = 1 MHz
nstoff VDD = 10 V, VGS = -4 to 0 V
ID = 1 A 60
Doc No.
TT4-EA-13115
Revision.
2
Established
:
2011-03-09
Revised
:
2013-09-02
Product Standards
MOS FET
MTM232270LBF
*2 Turn-on and Turn-off test circuit
Page 3 of 6
Vin
-4 V
0 V
PW = 10 μs
D.C. ≦ 1 %
Vin
VCC = 10 V
Vou
t
ID = 1 A
RL = 10
D
S
G
50
90 %
10 %
10 %
t(on) t(off)
Vou
t
Vin
90 %
Doc No.
TT4-EA-13115
Revision.
2
Established
:
2011-03-09
Revised
:
2013-09-02
Product Standards
MOS FET
MTM232270LBF
Technical Data ( reference )
Page
Capacitance - VDS
ID - VDS ID - VGS
VDS - VGS RDS(on) - ID
Dynamic Input/Output Characteristics
4of6
-40 ℃
0
0.1
0.2
0.3
0.4
0.5
0123456
Gate-source Voltage VGS (V)
Drain-source Voltage VDS (V)
ID = 1.0 A
0.5 A
0.25 A
10
100
1000
0.1 1
Drain current ID (A)
Drain source On-state Resistance
RDS(on) (m)
VGS = 4.0 V
2.5 V
0
1
2
3
4
5
01234
Total Gate Charge Qg (nC)
Gate-source Voltage VGS (V)
VDD = 10 V
1
10
100
1000
10000
0.1 1 10 100
Drain-source Voltage VDS (V)
Capacitance C (pF)
Ciss
Coss
Crss
0
0.05
0.1
0.15
0 0.5 1 1.5 2
Gate-source voltage VGS (V)
Drain current ID (A)
25 ℃
Ta = 85 ℃
-
40
℃
0
0.5
1
1.5
2
0 0.1 0.2 0.3
Drain-source voltage VDS (V)
Drain current ID (A)
1.5 V
2.5 V
2.0 V
VGS = 4.0 V
Doc No.
TT4-EA-13115
Revision.
2
Established
:
2011-03-09
Revised
:
2013-09-02
Product Standards
MOS FET
MTM232270LBF
Technical Data ( reference )
Page
Vth - Ta RDS(on) - Ta
PD - Ta
Safe Operating Area
5of
Rth - tsw
6
0
0.2
0.4
0.6
0.8
1
0 50 100 150
Temperature Ta (C)
Total Power Dissipation PD (W)
0.001
0.01
0.1
1
10
100
0.01 0.1 1 10 100
Drain-source Voltage VDS (V)
Drain current ID (A)
IDp = 8 A
Operation in this area
is limited by RDS(on)
Ta = 25 C,
Glass epoxy board (25.4×25.4×t0.8mm)
coated with copper foil,
which has more than 300mm2.
100 ms
1 s
DC
1 ms
10 ms
10
100
1000
0.1 1 10 100 1000
Pulse Width tsw (s)
Thermal Resistance Rth (C/W)
0
0.5
1
1.5
-50 0 50 100 150
Temperature (℃)
Gate-source Threshold Voltage Vth (V)
0
50
100
150
-50 0 50 100 150
Temperature (℃)
Drain-source On-resistance
RDS(on) (mΩ)
VGS = 2.5 V
4.0 V
Doc No.
TT4-EA-13115
Revision.
2
Established
:
2011-03-09
Revised
:
2013-09-02
Product Standards
MOS FET
MTM232270LBF
Page 6
SMini3-G1-B
6of
Land Pattern (Reference) (Unit : mm)
0.3
+0.1
0.0
2.1
±0.1
1.25
±0.10
0.15
+0.10
-0.05
0 to 0.1
1.3
±0.1
2.0
±0.2
(0.425)
(0.65) (0.65)
0.2
±0.1
0.9
+0.2
-0.1
0.9
±0.1
(8°)
(10°)
12
3
0.8
0.9
1.9
1.3
Doc No.
TT4-EA-13115
Revision.
2
Established
:
2011-03-09
Revised
:
2013-09-02
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