UTMC APPLICATION NOTE _______________________________________________________________ UT22VP10 RADPAL Characterization Summary Table 1: AC Electrical Characterization Summary 1/96 Parameter Sample Size Worst Case Conditions tPD 56 17.3ns -55C,+125C tEA 3 21.1ns -55C,+125C tER 3 19.26ns -55C,+125C tH 56 0.40ns -55C,+125C tSU 56 7.6ns -55C,+125C tP 56 19.5ns -55C,+125C tCO 56 11.9ns -55C,+125C tCO2 56 21.1ns -55C,+125C tWL 4 <10.0ns -55C,+125C tWH 4 <10.0ns -55C,+125C tCF 1 8.0ns -55C,+125C tAW 56 8.5ns -55C,+125C tAR 56 2.3ns -55C,+125C tAP 56 15.4ns -55C,+125C tSPR 56 1.3ns -55C,+125C fMAX1 56 51.3MHz -55C,+125C fMAX2 56 >50.0 MHz -55C,+125C fMAX3 56 50.2 MHz -55C,+125C Page 1 of 2 Table 2: DC Electrical Characterization Summary 1/96 Parameter Sample Size Worst Case Conditions VIL 4 2.16V CMOS -55C,+125C VIH 4 2.36V CMOS -55C,+125C VIL 4 1.48V TTL -55C,+125C VIH 4 2.06V TTL -55C,+125C VOL 5 0.007V CMOS -55C,+125C VOH 5 4.465V CMOS -55C,+125C VOL 5 0.252V TTL -55C,+125C VOH 5 4.373V TTL -55C,+125C IIN 10 0.032A -55C,+125C IOS 2 123.55mA -55C,+125C IOZ 10 1.886A -55C,+125C ICC 4 98.4mA -55C,+125C ESD 3 <500V 25C Page 2 of 2