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UTMC APPLICATION NOTE
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UT22VP10 RADPAL
Characterization Summary
Table 1: AC Electrical Characterization Summary
Parameter Sample
Size Worst Case Conditions
tPD 56 17.3ns -55°C,+125°C
tEA 321.1ns -55°C,+125°C
tER 319.26ns -55°C,+125°C
tH56 0.40ns -55°C,+125°C
tSU 56 7.6ns -55°C,+125°C
tP56 19.5ns -55°C,+125°C
tCO 56 11.9ns -55°C,+125°C
tCO2 56 21.1ns -55°C,+125°C
tWL 4<10.0ns -55°C,+125°C
tWH 4<10.0ns -55°C,+125°C
tCF 18.0ns -55°C,+125°C
tAW 56 8.5ns -55°C,+125°C
tAR 56 2.3ns -55°C,+125°C
tAP 56 15.4ns -55°C,+125°C
tSPR 56 1.3ns -55°C,+125°C
fMAX1 56 51.3MHz -55°C,+125°C
fMAX2 56 >50.0 MHz -55°C,+125°C
fMAX3 56 50.2 MHz -55°C,+125°C
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Table 2: DC Electrical Characterization Summary
Parameter Sample
Size Worst Case Conditions
VIL 42.16V CMOS
-55°C,+125°C
VIH 42.36V CMOS
-55°C,+125°C
VIL 41.48V TTL
-55°C,+125°C
VIH 42.06V TTL
-55°C,+125°C
VOL 50.007V CMOS
-55°C,+125°C
VOH 54.465V CMOS
-55°C,+125°C
VOL 50.252V TTL
-55°C,+125°C
VOH 54.373V TTL
-55°C,+125°C
IIN 10 0.032µA-55°C,+125°C
IOS 2123.55mA -55°C,+125°C
IOZ 10 1.886µA-55°C,+125°C
ICC 498.4mA -55°C,+125°C
ESD 3<500V 25°C
