DATA SH EET
Product specification
Supersedes data of 2004 Mar 18 2004 Aug 05
DISCRETE SEMICONDUCTORS
PDTC143E series
NPN resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 4.7 kΩ
2004 Aug 05 2
Philips Semiconductors Product specification
NPN resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 4.7 kΩPDTC143E series
FEATURES
•Built-in bias resistors
•Simplified circuit design
•Reduction of component count
•Reduced pick and place costs.
APPLICATIONS
•General purpose switching and amplification
•Inverter and interface circuits
•Circuit driver.
QUICK REFERENCE DATA
DESCRIPTION
NPN resistor-equipped transistor (see “Simplified outline,
symbol and pinning” for package details).
SYMBOL PARAMETER TYP. MAX. UNIT
VCEO collector-emitter
voltage −50 V
IOoutput current (DC) −100 mA
R1 bias resistor 4.7 −kΩ
R2 bias resistor 4.7 −kΩ
PRODUCT OVERVIEW
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
TYPE NUMBER PACKAGE MARKING CODE(1) PNP COMPLEMENT
PHILIPS EIAJ
PDTC143EE SOT416 SC-75 02 PDTA143EE
PDTC143EEF SOT490 SC-89 51 PDTA143EEF
PDTC143EK SOT346 SC-59 02 PDTA143EK
PDTC143EM SOT883 SC-101 E1 PDTA143EM
PDTC143ES SOT54 (TO-92) SC-43 TC143E PDTA143ES
PDTC143ET SOT23 −*02 PDTA143ET
PDTC143EU SOT323 SC-70 *02 PDTA143EU
2004 Aug 05 3
Philips Semiconductors Product specification
NPN resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 4.7 kΩPDTC143E series
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
TYPE NUMBER SIMPLIFIED OUTLINE AND SYMBOL PINNING
PIN DESCRIPTION
PDTC143ES 1 base
2 collector
3 emitter
PDTC143EE 1 base
PDTC143EEF 2 emitter
PDTC143EK 3 collector
PDTC143ET
PDTC143EU
PDTC143EM 1 base
2 emitter
3 collector
handbook, halfpage
MAM364
1
2
3
R1
R2
2
3
1
handbook, halfpage
MDB269
1
2
3
Top view
R1
R2
12
3
handbook, halfpage
MHC506
1
2
3
R1
R2
2
1
3
bottom view
2004 Aug 05 4
Philips Semiconductors Product specification
NPN resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 4.7 kΩPDTC143E series
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60 µm copper strip line.
TYPE NUMBER PACKAGE
NAME DESCRIPTION VERSION
PDTC143EE −plastic surface mounted package; 3 leads SOT416
PDTC143EEF −plastic surface mounted package; 3 leads SOT490
PDTC143EK −plastic surface mounted package; 3 leads SOT346
PDTC143EM −leadless ultra small plastic package; 3 solder lands; body
1.0 ×0.6 ×0.5 mm SOT883
PDTC143ES −plastic single-ended leaded (through hole) package; 3 leads SOT54
PDTC143ET −plastic surface mounted package; 3 leads SOT23
PDTC143EU −plastic surface mounted package; 3 leads SOT323
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter −50 V
VCEO collector-emitter voltage open base −50 V
VEBO emitter-base voltage open collector −10 V
VIinput voltage
positive −+30 V
negative −−10 V
IOoutput current (DC) −100 mA
ICM peak collector current −100 mA
Ptot total power dissipation Tamb ≤25 °C
SOT54 note 1 −500 mW
SOT23 note 1 −250 mW
SOT346 note 1 −250 mW
SOT323 note 1 −200 mW
SOT416 note 1 −150 mW
SOT883 notes 2 and 3 −250 mW
SOT490 notes 1 and 2 −250 mW
Tstg storage temperature −65 +150 °C
Tjjunction temperature −150 °C
Tamb operating ambient temperature −65 +150 °C
2004 Aug 05 5
Philips Semiconductors Product specification
NPN resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 4.7 kΩPDTC143E series
THERMAL CHARACTERISTICS
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60 µm copper strip line.
CHARACTERISTICS
Tamb =25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth(j-a) thermal resistance from junction to ambient in free air
SOT54 note 1 250 K/W
SOT23 note 1 500 K/W
SOT346 note 1 500 K/W
SOT323 note 1 625 K/W
SOT416 note 1 833 K/W
SOT883 notes 2 and 3 500 K/W
SOT490 notes 1 and 2 500 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector-base cut-off current VCB =50V; I
E=0A −−100 nA
ICEO collector-emitter cut-off current VCE =30V; I
B=0A −−1µA
VCE =30V; I
B= 0 A; Tj= 150 °C−−50 µA
IEBO emitter-base cut-off current VEB =5V; I
C=0A −−900 µA
hFE DC current gain VCE =5V; I
C=10mA 30 −−
VCEsat collector-emitter saturation voltage IC= 10 mA; IB= 0.5 mA −−150 mV
Vi(off) input-off voltage IC= 100 µA; VCE =5V −1.1 0.5 V
Vi(on) input-on voltage IC= 20 mA; VCE = 0.3 V 2.5 1.9 −V
R1 input resistor 3.3 4.7 6.1 kΩ
resistor ratio 0.8 1 1.2
Cccollector capacitance IE=i
e= 0 A; VCB =10V;
f = 1 MHz −−2.5 pF
R2
R1
--------
2004 Aug 05 6
Philips Semiconductors Product specification
NPN resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 4.7 kΩPDTC143E series
PACKAGE OUTLINES
UNIT A1
max bpcDEe
1
H
E
L
p
Qw
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
mm 0.1 0.30
0.15 0.25
0.10 1.8
1.4 0.9
0.7 0.5
e
11.75
1.45 0.2
v
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15 0.23
0.13
SOT416 SC-75
w
M
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
EAB
B
v
M
A
0 0.5 1 mm
scale
A
0.95
0.60
c
X
12
3
Plastic surface mounted package; 3 leads SOT416
97-02-28
2004 Aug 05 7
Philips Semiconductors Product specification
NPN resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 4.7 kΩPDTC143E series
UNIT A
1
b
p
cDE e
1
H
E
L
p
Qwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
mm 0.50
0.35 0.26
0.10 3.1
2.7 1.7
1.3 0.95
e
1.9 3.0
2.5 0.33
0.23 0.2
0.2
DIMENSIONS (mm are the original dimensions)
0.6
0.2
SOT346 TO-236 SC-59
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
w
M
v
M
A
B
A
B
0 1 2 mm
scale
A
1.3
1.0 0.1
0.013
c
X
12
3
Plastic surface mounted package; 3 leads SOT346
98-07-17
2004 Aug 05 8
Philips Semiconductors Product specification
NPN resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 4.7 kΩPDTC143E series
UNIT A
1
max.
A
(1)
bb
1
e
1
eLL
1
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm 0.50
0.46 0.20
0.12 0.55
0.47
0.03 0.62
0.55 0.35 0.65
DIMENSIONS (mm are the original dimensions)
Note
1. Including plating thickness
0.30
0.22
0.30
0.22
SOT883 SC-101 03-02-05
03-04-03
DE
1.02
0.95
L
E
2
3
1
b
b1
A1
A
D
L1
0 0.5 1 mm
scale
Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm SOT883
e
e1
2004 Aug 05 9
Philips Semiconductors Product specification
NPN resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 4.7 kΩPDTC143E series
UNIT A
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm 5.2
5.0
b
0.48
0.40
c
0.45
0.38
D
4.8
4.4
d
1.7
1.4
E
4.2
3.6
L
14.5
12.7
e
2.54
e1
1.27
L
1(1)
max.
2.5
b1
0.66
0.55
DIMENSIONS (mm are the original dimensions)
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
SOT54 TO-92 SC-43A 97-02-28
04-06-28
A L
0 2.5 5 mm
scale
b
c
D
b
1
L1
d
E
Plastic single-ended leaded (through hole) package; 3 leads SOT54
e1e
1
2
3
2004 Aug 05 10
Philips Semiconductors Product specification
NPN resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 4.7 kΩPDTC143E series
UNIT A
1
max. b
p
cDE e
1
H
E
L
p
Qwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
97-02-28
99-09-13
IEC JEDEC EIAJ
mm 0.1 0.48
0.38 0.15
0.09 3.0
2.8 1.4
1.2 0.95
e
1.9 2.5
2.1 0.55
0.45 0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23 TO-236AB
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
w
M
v
M
A
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface mounted package; 3 leads SOT23
2004 Aug 05 11
Philips Semiconductors Product specification
NPN resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 4.7 kΩPDTC143E series
UNIT A1
max bpcD Ee1HELpQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
mm 0.1
1.1
0.8 0.4
0.3 0.25
0.10 2.2
1.8 1.35
1.15 0.65
e
1.3 2.2
2.0 0.23
0.13 0.20.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT323 SC-70
w
M
bp
D
e1
e
A
B
A1
Lp
Q
detail X
c
HE
E
v
M
A
AB
y
0 1 2 mm
scale
A
X
12
3
Plastic surface mounted package; 3 leads SOT323
97-02-28
2004 Aug 05 12
Philips Semiconductors Product specification
NPN resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 4.7 kΩPDTC143E series
UNIT b
p
cDE e
1
H
E
L
p
wv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
98-10-23
IEC JEDEC EIAJ
mm 0.33
0.23 0.2
0.1 1.7
1.5 0.95
0.75 0.5
e
1.0 1.7
1.5 0.1
0.1
DIMENSIONS (mm are the original dimensions)
0.5
0.3
SOT490 SC-89
bp
D
e1
e
A
Lp
detail X
HE
E
w
M
v
M
A
B
AB
0 1 2 mm
scale
A
0.8
0.6
c
X
12
3
Plastic surface mounted package; 3 leads SOT490
2004 Aug 05 13
Philips Semiconductors Product specification
NPN resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 4.7 kΩPDTC143E series
DATA SHEET STATUS
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
LEVEL DATA SHEET
STATUS(1) PRODUCT
STATUS(2)(3) DEFINITION
I Objective data Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II Preliminary data Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III Product data Production This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseoratanyotherconditionsabovethosegiveninthe
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationorwarrantythatsuchapplications willbe
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomers usingorsellingtheseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
© Koninklijke Philips Electronics N.V. 2004 SCA76
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
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Contact information
For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
Printed in The Netherlands R75/09/pp14 Date of release: 2004 Aug 05 Document order number: 9397 750 13674
