DMN63D1LDW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features V(BR)DSS RDS(ON) max ID max TA = +25C 60V 2 @ VGS = 10V 3 @ VGS = 5V 250mA Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Applications Motor Control Power Management Functions Case: SOT363 Case Material: Molded Plastic. "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.006 grams (Approximate) D2 D1 SOT363 ESD Protected Gate Gate Protection Diode Gate Protection Diode S1 G1 S1 S2 S2 G2 D1 Q2 N-Channel Q1 N-Channel Top View D2 G2 G1 Top View Pin out Equivalent Circuit Ordering Information (Note 4) Part Number DMN63D1LDW-7 DMN63D1LDW-13 Notes: Case SOT363 SOT363 Packaging 3000/Tape & Reel 10000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information D2 G1 S1 1D3 = Product Type Marking Code YM = Date Code Marking Y or Y = Year (ex: B = 2014) M = Month (ex: 9 = September) 1D3 YM 1D3 YM NEW PRODUCT NEW PRODUCT Product Summary S2 Date Code Key Year 2014 Code B Month Code Jan 1 2015 C Feb 2 DMN63D1LDW Document number: DS38033 Rev. 1 - 2 G2 2016 D Mar 3 D1 2017 E Apr 4 2018 F May 5 2019 G Jun 6 1 of 6 www.diodes.com 2020 H 2021 I 2022 J 2023 K 2024 L 2025 M Jul 7 Aug 8 Sep 9 Oct O Nov N Dec D July 2015 (c) Diodes Incorporated DMN63D1LDW Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Symbol VDSS VGSS NEW PRODUCT NEW PRODUCT Drain-Source Voltage Gate-Source Voltage Steady TA = +25C State TA = +70C Maximum Continuous Body Diode Forward Current (Note 6) Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) (Note 6) Continuous Drain Current (Note 6) VGS = 10V Unit V V IS IDM Value 60 20 250 200 0.5 1.2 Symbol Value Unit PD 310 mW RJA 414 C/W PD 390 mW RJA 324 C/W TJ, TSTG -55 to +150 C ID mA A A Thermal Characteristics (@TA = +25C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Steady State Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Steady State Operating and Storage Temperature Range Electrical Characteristics (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: Symbol Min Typ Max Unit Test Condition BVDSS IDSS IGSS 60 -- -- -- -- -- -- 1.0 10 V A A VGS = 0V, ID = 10A VDS = 60V, VGS = 0V VGS = 20V, VDS = 0V VGS(TH) 1.0 V RDS(ON) 1.6 -- -- 2.5 -- -- 2.0 3.0 |Yfs| VSD 80 -- -- 0.75 -- 1.1 mS V VDS = 10V, ID = 1mA VGS = 10V, ID = 0.5A VGS = 5V, ID = 0.05A VDS =10V, ID = 0.2A VGS = 0V, IS = 115mA Ciss Coss Crss Rg Qg Qgs Qgd tD(ON) tR tD(OFF) tF -- -- -- -- -- -- -- -- -- -- -- 30 4.2 2.9 133 304 203 84 3.9 3.4 15.7 9.9 -- -- -- -- -- -- -- -- -- -- -- pF pF pF pC pC pC ns ns ns ns VDS = 25V, VGS = 0V f = 1.0MHz f = 1MHz , VGS = 0V, VDS = 0V VGS = 4.5V, VDS = 10V, ID = 250mA VDD = 30V, VGS = 10V, RG = 25, ID = 200mA 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 6. Device mounted on 1" x 1" FR-4 PCB with high coverage 2oz. Copper, single sided. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. DMN63D1LDW Document number: DS38033 Rev. 1 - 2 2 of 6 www.diodes.com July 2015 (c) Diodes Incorporated DMN63D1LDW 1.4 2.5 RDS(ON), STATIC DRAIN=SOURCE ONRESISTANCE () VGS=10.0V ID, DRAIN CURRENT (A) VGS=4.0V VGS=5.0V 1.0 VGS=6.0V 0.8 VGS=8.0V VGS=3.0V 0.6 0.4 0.2 0.0 1.5 VGS=10.0V, ID=150mA 1 0.5 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) 5 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE () Figure 2. On-Resistance Variation with Temperature Figure 1. Typical Output Characteristic 2 VGS(TH), GATE THRESHOLD VOLTAGE (V) 2 VGS(TH), GATE THRESHOLD VOLTAGE (V) VGS=10.0V, ID=300mA 2 0 0 1.6 ID=250A 1.2 0.8 0.4 1.6 ID=1mA 1.2 0.8 0.4 0 0 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE () -50 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE () Figure 4. Gate Threshold Variation with Temperature 150 Figure 3. Gate Threshold Variation with Temperature 1 -25 RDS(ON), STATIC DRAIN-SOURCE ON-STATE RESISTANCE () 5 VDS= 10.0V ID, DRAIN CURRENT (A) NEW PRODUCT NEW PRODUCT 1.2 0.1 125 150 85 0.01 25 -55 0.001 1 1.5 2 2.5 3 3.5 4 4.5 VGS, GATE SOURCE VOLTAGE (V) Figure 5. Typical Transfer Characteristics DMN63D1LDW Document number: DS38033 Rev. 1 - 2 5 3 of 6 www.diodes.com VGS= 5.0V 4 3 85 125 150 2 1 25 -55 0 0.001 0.01 0.1 1 ID, DRAIN-SOURCE CURRENT (A) Figure 6. Static Drain-Source On-Resistance vs. Drain Current July 2015 (c) Diodes Incorporated 2 VGS= 10.0V RDS(ON), STATIC DRAIN-SOURCE ONRESISTANCE () RDS(ON), STATIC DRAIN-SOURCE ON-STATE RESISTANCE () 5 4 3 125 85 150 2 1 25 0 -55 TJ=25 1.8 1.6 ID=150mA 1.2 1 0.01 0.1 1 ID, DRAIN-SOURCE CURRENT (A) Figure 7. Static Drain-Source On-Resistance vs. Drain Current 2 4 5 6 7 8 9 10 VGS, GATE-SOURCE VOLTAGE (V) Figure 8. Static Drain-Source On-Resistance vs. GateSource Voltage 3 50 1 f=1MHz VGS=0V CT, JUNCTION CAPACITANCE (pF) IDR, REVERSE DRAIN CURRENT (A) ID=300mA 1.4 0.001 0.1 TJ=125 TJ=150 0.01 TJ=85 TJ=25 45 40 35 Ciss 30 25 20 15 Crss 10 Coss 5 TJ=-55 0 0.001 0 0.5 1 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Reverse Drain Current 1.5 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10. Typical Junction Capacitance 30 10 RDS(ON) Limited ID, DRAIN CURRENT (A) NEW PRODUCT NEW PRODUCT DMN63D1LDW PW =100s PW =1ms 1 0.1 PW =10ms PW =100ms 0.01 TJ(MAX)=150 TA=25 Single Pulse DUT on 1*MRP board VGS=10V PW =1s PW =10s DC 0.001 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 11. SOA, Safe Operation Area DMN63D1LDW Document number: DS38033 Rev. 1 - 2 100 4 of 6 www.diodes.com July 2015 (c) Diodes Incorporated DMN63D1LDW NEW PRODUCT NEW PRODUCT r(t), TRANSIENT THERMAL RESISTANCE 1 D=0.5 D=0.3 D=0.9 D=0.7 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D=0.005 RJA(t)=r(t) * RJA RJA=414/W Duty Cycle, D=t1 / t2 D=Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Figure 12. Transient Thermal Resistance Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. E E1 F SOT363 Dim Min Max Typ A1 0.00 0.10 0.05 A2 0.90 1.00 1.00 b 0.10 0.30 0.25 c 0.10 0.22 0.11 D 1.80 2.20 2.15 E 2.00 2.20 2.10 E1 1.15 1.35 1.30 e 0.650 BSC F 0.40 0.45 0.425 L 0.25 0.40 0.30 a 8 All Dimensions in mm b D A2 c A1 DMN63D1LDW Document number: DS38033 Rev. 1 - 2 e L a 5 of 6 www.diodes.com July 2015 (c) Diodes Incorporated DMN63D1LDW Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. NEW PRODUCT NEW PRODUCT C Dimensions G Y1 Y C G X Y Y1 Value (in mm) 0.650 1.300 0.420 0.600 2.500 X IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2015, Diodes Incorporated www.diodes.com DMN63D1LDW Document number: DS38033 Rev. 1 - 2 6 of 6 www.diodes.com July 2015 (c) Diodes Incorporated