PBSS5350D,115 - NXP - Datasheet.Directory

1. Product profile

1.1 General description

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small

SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.

NPN complement: PBSS4350D

1.2 Features and benefits

Low collector-emitter saturation

voltage VCEsat

High current capability

High efficiency due to less heat

generation

AEC-Q101 qualified

Smaller Printed-Circuit Board (PCB)

area than for conventional transistors

1.3 Applications

Supply line switching circuits

Battery management applications

DC-to-DC conversion

1.4 Quick reference data

PBSS5350D

50 V, 3 A PNP low VCEsat (BISS) transistor

Rev. 6 — 28 June 2011 Product data sheet

SOT457

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VCEO collector-emitter

voltage open base - - -50 V

ICcollector current - - -3 A

ICM peak collector current - - -5 A

RCEsat collector-emitter

saturation resistance IC=-2A; I

B= -200 mA; pulsed;

tp≤300 µs; δ≤0.02 ; Tamb =25°C - 120 150 mΩ

Product data sheet Rev. 6 — 28 June 2011 2 of 12

NXP Semiconductors PBSS5350D

50 V, 3 A PNP low VCEsat (BISS) transistor

2. Pinning information

3. Ordering information

4. Marking

Tabl e 2. Pinning info rmation

Pin Symbol Description Simplified outline Graphi c sy mbol

1 C collector

SOT457 (TSOP6)

2 C collector

3 B base

4Eemitter

5 C collector

6 C collector

132

1, 2, 5, 6

sym030

Table 3. Ordering information

Type number Package

Name Description Version

PBSS5350D TSOP6 plastic surface-mounted package (TSOP6); 6 leads SOT457

Table 4. Marking codes

Type number Marking code

PBSS5350D 53

Product data sheet Rev. 6 — 28 June 2011 3 of 12

NXP Semiconductors PBSS5350D

50 V, 3 A PNP low VCEsat (BISS) transistor

5. Limiting values

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for collector 1 cm2.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.

[3] Device mounted on an FR4 4-layer PCB.

6. Thermal characteristics

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VCBO collector-base voltage open emitter - -60 V

VCEO collector-emitter voltage open base - -50 V

VEBO emitter-base voltage open collector - -6 V

ICcollector current - -3 A

ICM peak collector current - -5 A

IBM peak base current - -1 A

Ptot total power dissipation Tamb ≤25 °C [1] - 600 mW

[2] - 750 mW

[3] - 1200 mW

Tjjunction temperature - 150 °C

Tamb ambient temperature -65 150 °C

Tstg storage temperature -65 150 °C

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-a) thermal resistance

from junction to

ambient

in free air [1] - - 208 K/W

[2] - - 160 K/W

pulsed; tp ≤ 50 ms; δ ≤ 0.5.; in free air [2] - - 100 K/W

Product data sheet Rev. 6 — 28 June 2011 4 of 12

NXP Semiconductors PBSS5350D

50 V, 3 A PNP low VCEsat (BISS) transistor

7. Characteristics

Table 7. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

ICBO collector-base cut-off

current VCB =-50V; I

E=0A; T

amb = 25 °C - - -100 nA

VCB =-50V; I

E=0A; T

j= 150 °C - - -50 µA

IEBO emitter-base cut-off

current VEB =-5V; I

C=0A; T

amb = 25 °C - - -100 nA

hFE DC current ga i n VCE =-2V; I

C=-500mA; T

amb = 25 °C 200 - -

VCE =-2V; I

C=-1A; pulsed;

tp≤300 µs; δ≤0.02 ; Tamb =25°C 200 - -

VCE =-2V; I

C=-2A; pulsed;

tp≤300 µs; δ≤0.02 ; Tamb =25°C 100 - -

VCEsat collector-emitter

saturati on voltage IC=-500mA; I

B=-50mA; T

amb =25°C ---100mV

IC=-1A; I

B=-50mA; T

amb =25°C ---180mV

IC=-2A; I

B= -200 mA; pulsed;

tp≤300 µs; δ≤0.02 ; Tamb =25°C ---300mV

RCEsat collector-emitter

saturation resistance - 120 150 mΩ

VBEsat base-emitter saturation

voltage ---1.2V

VBEon base-emitter turn-on

voltage VCE =-2V; I

C=-1A; pulsed;

tp≤300 µs; δ≤0.02 ; Tamb =25°C ---1.1V

fTtransition frequency VCE =-5V; I

C=-100mA; f=100MHz;

Tamb =25°C 100 - - MHz

Cccollector capacitance VCB =-10V; I

E=0A; i

e=0A;

f=1MHz; T

amb =25°C --40pF

Product data sheet Rev. 6 — 28 June 2011 5 of 12

NXP Semiconductors PBSS5350D

50 V, 3 A PNP low VCEsat (BISS) transistor

VCE = -2 V

(1) Tamb = 150 °C

(2) Tamb = 25 °C

(3) Tamb = -55 °C

Tamb = 25 °C

Fig 1. DC current gain as a function of collector

current; typical values Fig 2. Collector current as a function of

collector-emitter voltage; typical values

Tamb = 25 °C VCE = -2 V

(1) Tamb = -55 °C

(2) Tamb = 25 °C

(3) Tamb = 150 °C

Fig 3. Collector current as a function of

collector-emitter voltage; typical values Fig 4. Base-emitter voltage as a function of collector

current; typical values

mgw167

hFE

IC (mA)

1000

200

400

600

800

−10−1−1−10 −102−103−104

(1)

(2)

(3)

VCE (V)

0.0 –2.0–1.6–0.8 –1.2–0.4

006aac605

–400

–600

–200

–800

–1000

(mA)

IB (nA) = –3.96

–0.99

–3.63

–0.66

–1.65

–1.98

–2.31

–2.64

–0.33

–2.97

–1.32

–3.30

VCE (V)

0.0 –2.0–1.6–0.8 –1.2–0.4

006aac606

–2

–3

–1

–4

–5

(A)

–25

–75–100

–125

–150

–175

–50

IB (mA) = –250

–225

–200

mgw168

IC (mA)

VBE

(V)

−1.2

−0.4

−0.8

−10−1−1−10 −102−103−104

(1)

(2)

(3)

Product data sheet Rev. 6 — 28 June 2011 6 of 12

NXP Semiconductors PBSS5350D

50 V, 3 A PNP low VCEsat (BISS) transistor

IC/IB = 10

(1) Tamb = -55 °C

(2) Tamb = 25 °C

(3) Tamb = 150 °C

IC/IB = 10

(1) Tamb = 150 °C

(2) Tamb = 25 °C

(3) Tamb = -55 °C

Fig 5. Base-emitter saturation voltage as a function of

collector current; typical values Fig 6. Coll e cto r - em i tter saturation v oltage as a

function of collector current; typical values

IC/IB = 20

(1) Tamb = 150 °C

(2) Tamb = 25 °C

(3) Tamb = -55 °C

Fig 7. Collector-emitter saturation resistance as a fun ction of colle ctor current; typical values

mgw170

IC (mA)

−1.4

−0.8

−0.6

−0.4

−0.2

−1.0

−1.2

−10−1−1−10 −102−103−104

VBEsat

(V)

(1)

(2)

(3)

mgw169

IC (mA)

−103

−102

−10

−1

−10−1−1−10 −102−103−104

VCEsat

(mV)

(1)

(2)

(3)

mgu390

103

102

10−1

−10−1−1−10 IC (mA)

RCEsat

(Ω)

−102−103−104

(1)

(3)

(2)

Product data sheet Rev. 6 — 28 June 2011 7 of 12

NXP Semiconductors PBSS5350D

50 V, 3 A PNP low VCEsat (BISS) transistor

8. Package outline

Fig 8. Package outline SOT457 (TSOP6)

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

SOT457 SC-74

wBM

pin 1

index A

detail X

vMA

scale

132

0 1 2 mm

Plastic surface-mounted package (TSOP6); 6 leads SOT457

UNIT A1bpcDEHELpQywv

mm 0.1

0.013 0.40

0.25 3.1

2.7

0.26

0.10 1.7

1.3

0.95 3.0

2.5 0.2 0.10.2

DIMENSIONS (mm are the original dimensions)

0.6

0.2 0.33

0.23

1.1

0.9

05-11-07

06-03-16

Product data sheet Rev. 6 — 28 June 2011 8 of 12

NXP Semiconductors PBSS5350D

50 V, 3 A PNP low VCEsat (BISS) transistor

9. Soldering

Fig 9. Reflow soldering footprint for SOT457 (TSOP6)

Fig 10. Wave soldering footprint for SOT457 (TSOP6)

solder lands

solder resist

occupied area

solder paste

sot457_fr

3.45

1.95

2.8253.3

0.45

(6×)0.55

(6×)

0.7

(6×)

0.8

(6×)2.4

0.95

Dimensions in mm

sot457_fw

5.3

5.05

1.45

(6×)

0.45

(2×)

1.5

(4×)

2.85

1.475

1.475 solder lands

solder resist

occupied area

preferred transport

direction during soldering

Dimensions in mm

Product data sheet Rev. 6 — 28 June 2011 9 of 12

NXP Semiconductors PBSS5350D

50 V, 3 A PNP low VCEsat (BISS) transistor

10. Revision history

Table 8. Revision history

Document ID Release date Data sheet status Change notice Supersedes

PBSS5350D v.6 20110628 Product data sheet - PBSS5350D v.5

Modifications: • 5 “Limiting values”: Ptot conditions updated.

PBSS5350D v.5 20110323 Product data sheet - PBSS5350D v.4

PBSS5350D v.4 20011113 Product specification - PBSS5350D v.3

PBSS5350D v.3 20010713 Product specification - PBSS5350D v.2

PBSS5350D v.2 20010126 Product specification - PBSS5350D v.1

PBSS5350D v. 1 2000 0308 Product specification - -

Product data sheet Rev. 6 — 28 June 2011 10 of 12

NXP Semiconductors PBSS5350D

50 V, 3 A PNP low VCEsat (BISS) transistor

11. Legal information

11.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term 'short data sheet' is explained in section "Definitions".

[3] The p r oduct status of device(s) described in this document may have chang ed since this document was published and may differ in case of multiple devices. The latest product

status information is available on the Internet at URL http://www.nxp.com.

11.2 Definitions

Preview — The document is a preview version only. The document is still

subject to formal approval, which may result in modificati ons or additions.

NXP Semiconductors does not give any representati ons or warranties as to

the accuracy or completeness of informati on included herein and shall have

no liability for the consequences of use of such info rmation.

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

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full information. For detailed and full information see the relevant full data

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In no event shall NXP Semiconductors be liable for any indirect, incide ntal,

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Quick reference data — The Quick reference dat a is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty tha t such application s will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and ope ration of their applications

and products using NXP Semiconductors product s, and NXP Semiconductors

accepts no liability for any assistance with applicati ons or customer product

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the products or of the application or use by customer’s third party

customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanent ly and irreversibly affect

the quality and reliability of the device.

Document status [1] [2] Product status [3] Definition

Objective [short] data sheet Development This document contains data from the objective specification for product development.

Preliminary [shor t] data sheet Qualification This document contains data from the preliminary specification.

Product [short] data sheet Production This document contains the product specification.

Product data sheet Rev. 6 — 28 June 2011 11 of 12

NXP Semiconductors PBSS5350D

50 V, 3 A PNP low VCEsat (BISS) transistor

Terms and conditions of commercial sale — NXP Semiconductors

products are sold subject to the general terms and conditions of commercial

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applying the customer’s general terms and conditions with regard to the

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the product is not suitable for automotive use. It i s neit her qua lified nor tested

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In the event that customer uses the product for design-in and use in

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11.4 Trademarks

Notice: All referenced b rands, produc t names, service names and trademarks

are the property of their respect i ve ow ners.

Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,

FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,

ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,

QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,

TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.

HD Radio and HD Radio logo — are trademarks of iBiquity Digital

Corporation.

12. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

NXP Semiconductors PBSS5350D

50 V, 3 A PNP low VCEsat (BISS) transistor

For more information, please visit: http://www.nxp.co m

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 28 June 2011

Document identifier: PBSS5350D

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

13. Contents

1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.1 General description . . . . . . . . . . . . . . . . . . . . . .1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . .1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . .2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . .2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3

6 Thermal characteristics . . . . . . . . . . . . . . . . . . .3

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .4

8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .7

9 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8

10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . .9

11 Legal information. . . . . . . . . . . . . . . . . . . . . . . .10

11.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .10

11.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .10

11.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .10

11.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .11

12 Contact information. . . . . . . . . . . . . . . . . . . . . .11