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VTP Process Photodiodes VTP8440H
PRODUCT DESCRIPTION
Planar silic on phot odiode in a re cessed ceramic
package. Chip is coated with a protective layer
of clear epoxy. These diodes exhibit low dark
current under reverse bias and fast speed of
response.
PACKAGE DIMENSIONS inch (mm)
CASE 21 8 mm CERAMIC
CHIP ACTIVE AREA: .008 in
2
(5.16 mm
2
)
ABSOLUTE MAXIMUM RATINGS
Storage Temperature: -20°C to 75°C
Ope rati ng Temp eratur e: -20°C to 75°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTP curves, pages 45-46)
SYMBOL CHARACTERISTIC TEST CONDITIONS VTP8440H UNITS
Min. Typ. Max.
ISC Short Circuit Current H = 100 fc, 2850 K 30 55 µA
TC ISC ISC Tem perat ure Coefficient 2850 K .20 %/°C
VOC Open Circuit Voltage H = 100 2850 K 350 mV
TC V OC VOC Temperature Coefficient 2850 K -2.0 mV/°C
IDDark Current H = 0, VR = 50 V 15 nA
RSH Shunt Resistance H = 0, V = 10 mV .5 GΩ
CJJunction Capacitance H = 0, V = 15 V 15 pF
Re Responsivity 940 nm .025 A/(W/cm2)
SRSensitivity @ Peak .55 A/W
λrange Spectral Applica tion Range 400 1150 nm
λpSpectral Response - Pea k 925 nm
VBR Breakdown Voltage 50 140 V
θ1/2 Angular Resp. - 50% Resp. Pt. ±50 Degrees
NEP Noise Equivalent Power 1.3 x 10-13 (Typ.)
D* Specific Detectivity 1.8 x 10 12 (Typ.) WHz⁄
cm Hz W⁄
PerkinElmer Optoelectronics, 22001 Dumberry, Vaudreuil, Canada J7V 8P7 Phone: 877-734-6786 Fax: 450-424-3413 www.perkinelmer.com/opto
RoHS Compliant
