Philips Semiconductors Product specification erences rere ee cee sce cece eee ee ec eecc ccc ne NPN 3 GHz wideband transistor BFS17A a DESCRIPTION NPN transistor in a plastic SOT23 package. 3 APPLICATIONS L It is intended for RF applications such as oscillators in TV tuners. 1 rc 2 PINNING Top view M8003 PIN DESCRIPTION 1 base Marking code: E2p. 2 __emitter Fig.1 SOT23. 3 collector QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Vecso collector-base voltage open emitter - 25 Vv Vceo collector-emitter voltage open base - 15 Vv Ico DC collector current - 25 mA Prot total power dissipation up to T, = 70 C; note 1 - 300 mw fr transition frequency Ig = 25 MA; Voce = 5 V; f = 500 MHz; 2.8 - GHz Tamb = 25 C Gum maximum unilateral power gain Io = 14 MA; Voge =10V;f=800MHz | 13.5 . |- dB F noise figure lc = 2 MA; Vce = 5 V; f = 800 MHz; 25 - dB Tamb = 25 C Vo output voltage dim = 60 dB; Ic = 14 MA; Voce = 10 V; | 150 - mv . Ri = 75 Q; Tamb = 25 C; fpiqen = 793.25 MHz LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Vcso collector-base voltage open emitter - 25 Vv VcEo collector-emitter voltage open base - 15 Vv VeBo emitter-base voltage open collector - 25 v Io DC collector current - 25 mA lom peak collector current ~_ 50 mA Prot total power dissipation up to T, = 70 C; note 1 - 300 mW Tstg storage temperature -65 +150 C Tj junction temperature - 150 C Note to the Quick reference data and the Limiting values 1. T, is the temperature at the soldering point of the collector pin. September1995 569 Philips Semiconductors Product specification NPN 3 GHz wideband transistor BFS17A THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rtn j-s thermal resistance from junction to soldering point | up to T, = 70 C; note 1 260 K/AW Note 1. T, is the temperature at the soldering point of the collector pin. CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. | TYP. | MAX. | UNIT leBo collector cut-off current le = 0; Veg = 10 V - - 50 nA Nee DC current gain Ilo =2MA; Vee =1V; Tam = 25C | 25 90 - Ic = 25 MA; Vee = 1 Vi Tamp = 25C =| 25 90 - fr transition frequency lo = 25 MA; Voce = 5 V; f= 500 MHz; | - 2.8 ~ GHz Tamb = 25 C Ce collector capacitance le = 0; Veg = 10 V; f= 1 MHz; - 0.7 - pF Tamb = 25 C Ce emitter capacitance lo = 0; Veg = 0.5 V; f = 1 MHz - 125 |- pF Cre feedback capacitance Io = 0; Vog = 5 V3 f= 1 MHz - 0.6 - pF Gum maximum unilateral power gain | Ic = 14 MA; Veg = 10 V; f = 800 MHz | - 13.5 |- dB note 1 F noise figure Io = 2 MA; Vee = 5 V; Zg = 60 Q; - 2.5 - dB f = 800 MHZ; Tamp = 25 C Vo output voltage note 2 - 150 - mv Notes Soil 1. Guy is the maximum unilateral power gain, assuming S12 is zero and Gyy = 10 log dB. 2. dim = 60 dB (DIN 45004B); Ic = 14 MA; Voge = 10 V; Ry = 75 Q; Tamp = 25 C; Vp = Vo; fp = 795.25 MHz; Vq = Vo -6 GB; fg = 803.25 MHz; V,= Vo 6 GB; f, = 805.25 MHz; measured at fio.g-1) = 793.25 MHz. September1995 570 (1 =|844]79(1 - [So0l) Philips Semiconductors Product specification NPN 3 GHz wideband transistor BFS17A L1 =L3 = 5 pH Ferroxcube choke. L2 = 3 tums 0.4 mm copper wire; winding pitch 1 mm; internal diameter 3 mm. Fig.2 Intermodulation distortion and second order intermodulation distortion test circuit. MEA395 hE ig (mA) Vom = 1: Tamb = 25 C. Fig.3 DC current gain as a function of collector current. MEASO3 (pF) 0.5 12 16 Yop () lg = 0; f= 1 MHz; Tamp = 25 C. Fig.4 Collector capacitance as a function of collector-base voitage. September1995 571 Philips Semiconductors Product specification NPN 3 GHz wideband transistor BFS17A MEASO4 MEA902 0 20 Ig (ma) 40 0 10 Ig (ma) 20 Voge = 5 V; 1 = 500 MHz: Tamb = 25 C. Veg = 5 V; Z = 60 Q; f = 800 MHZ; Tamb = 25 C. Fig.5 Transition frequency as a function of Fig.6 Minimum noise figure as a function of collector current. collector current. September1995 572