STEMENS AKTIENGESELLSCHAF SIEMENS W7E D MM 6235605 0027395 O MBSIEG SFH 485P GaAlAs INFRARED EMITTER TAS Package Dimensions in Inches (mm) FEATURES Radiant Intensity Selections SFH485P-1 3.15-6.3 SFH485P-2 >5 * Good Spectral Matching to Silicon Photo Detector * Gallium Aluminum Arsenide Material Low Cost T-134 Base Package Flat Lens * Long Term Stability * Wide Beam, 80 e Very High Power, 20 mW Typical at 100 mA DESCRIPTION SFH 485P an infrared emitting diode, emits radiation in the near infrared range (880 nm peak). The emitted radiation, which can be modulated, is generated by forward flowing current. The device is enclosed ina 5mm diameter plastic package. Uses for the SFH 485P include: IR remotre control of color TV receivers, smoke detectors, and other applications requiring very high power, such IR touch screens Surface nol Fai ea 120m) 224 06 eng catel | [| es 10 1 201 (5 1) (254) 189 (4.8) Pr -1 | wry som | af Le (0.4) 030 (1.0) Maximum Ratings Storage temperature Tyg -55to +100 C Soldenng temperature at dip soldering (22 mm distance from the case bottom, soldering time t=5 sec) Toa 260 C Soldering temperature at iron soldering {22 mm distance fram the case battam, soldering time t=3 sec) Toor 300 C Junction temperature T, 100 ad ; Reverse voltage Va 5 Vv Forward current lr 100 mA Surge current (7 = 10 ps) rg 25 A Power dissipation {T = 25C) Por 200 mw Thermal resistance Raa 375 KW Characteristics Camb = 25C) Wavelength at peak emission at |, =10 mA Apeak 880 nm Wavelength at peak emission at |. = 100 mA, tovigg = 20 ms, Duty cycle =1 12 Apeak 883 nm Wavelength at peak emission at p= 1A, touse = 100 ps, Duty cycle = 1100 Apeak 886 am Spectral bandwidth at Ip = 10 mA An 80 nm Half angle 9 +40 Deg Active chip area A 016 mm? Dimensions af active chip area LxwWw 04x04 mm Distance chip surface to case surface dD 05to10 mm Switching time (I, from 10% to 90%, and from 90% to 10% Ip = 100 mA) 1, h O6/05 us Capaertance (_,=0 V, f=1 MHz) Gc, 25 pF Forward Voltage (Ip = 100 MA, thugs = 20 ms) Ve 4.5 (31.8) Vv (p= 1A, tgs = 100 LS) Ve 3.0 (53.8) Vv Breakdown voltage (Iq = 10 tA) Ver 30 (= 5) Vv Reverse current (V_=5) lp 001 (<1) pA Temperature coefiicient of |, or , TT -05 IK Temperature coefticient of Ve Te 02 Yi Temperature coefficient of Apeak TC 025 nm/K Radiant Intensity |, in Axial Directlon Measured at a Solid Angle of 2 =0.01sr Group SFH 485P-1 SFH 485P-2 Radiant Intensity Ir (= 100 mA Tp=20 ms) 3 15-63 25 mWisr (p=1 A, Tp= 100 us) 35 56 mWisr Total Radiant Flux %, (Ip= 100 mA. Tp =20 ms) at 23 mw 7-46 STEMENS AKTIENGESELLSCHAF Relative spectral emission l= FOO % a q 1 re) a6 ez To 800 B50 900950 1000 1m i Maximum permissable forward current l= FT) mA 125 4 0 % 5a 3 Radiant intensity e Co = LT it 1 w 100 = WOOHOO me + i, Forward current |= FV, A 10 061 Radiant characteristics Va = He) 30 40 50 eo? 70 aoe $o 6 U7E D MM 8235605 O0e73%b 2 MBSIEG F4e-l3 6 tm 8 6G tO OT Tony wom Ww wy Tap ~ Vp Forward voltage Radiant intensity |, _ I Wavelength at peak emission vo = (Tao) 1,28 5 (Tame) peak = f Taran) nm 300 1, ' Tet Aver ue B90 2s Ez Es 880 aro 9 25 50 K wore oC 0 ry Py) 7 100 C Tare > Taw Permissable pulse load Forward current (max): = fir) dependent upon the lead length Outy cycle D = Parameter from the package bottom to the ma ma PC board. 10 120 4, 100 I. 40 507 SFH 485P 7-47