DATA SH EET
Product specification
Supersedes data of 1997 Apr 10 2001 Oct 22
DISCRETE SEMICONDUCTORS
BGY587B
550 MHz, 27 dB gain push-pull
amplifier
dbook, halfpage
M3D252
2001 Oct 22 2
NXP Semiconductors Product specification
550 MHz, 27 dB gain push-pull amplifier BGY587B
FEATURES
Excellent linearity
Extremely low nois e
Silicon nitride passivation
Rugged construction
TiPtAu metallized crystals ensure
optimal reliability.
DESCRIPTION
Hybrid amplifier module for CATV
systems operating over a frequency
range of 40 to 550 MHz at a voltage
supply of +24 V (DC).
PINNING - SOT115J PIN CONFIGURATION
PIN DESCRIPTION
1 input
2 common
3 common
5+V
B
7 common
8 common
9 output
Fig.1 Simplified outline.
alfpage
789
2351
Side view
MSA319
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Gppower gain f = 50 MHz 26.2 27.8 dB
f = 550 MHz 27.5 dB
Itot total current consumption (DC) VB=+24V 340 mA
SYMBOL PARAMETER MIN. MAX. UNIT
ViRF input voltage 55 dBmV
Tstg storage temperature 40 +100 C
Tmb operating mounting base temperature 20 +100 C
VBDC supply voltage +28 V
2001 Oct 22 3
NXP Semiconductors Product specification
550 MHz, 27 dB gain push-pull amplifier BGY587B
CHARACTERISTICS
Table 1 Bandwidth 40 to 550 MHz; Tcase =30C; ZS=Z
L=75
Notes
1. fp= 55.25 MHz; Vp= 44 dBmV;
fq=493.25MHz; V
q= 44 dBmV;
measured at fp+f
q= 548.5 MHz.
2. Measured according to DIN45004B;
fp=540.25MHz; V
p=V
o= 66.5 dBmV;
fq=547.25MHz; V
q=V
o6dB;
fr= 549.25 MHz; Vr=V
o6dB;
measured at fp+f
qfr=538.25MHz.
3. The module normally oper ates at VB= +24 V, but is able to withstand supply transients up to +30 V.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Gppower gain f = 5 0 MHz 26.2 27.8 dB
f = 550 MHz 27.5 dB
SL slope cable equivalent f = 4 0 to 550 MHz 0.5 2.5 dB
FL flatness of frequency re sponse f = 40 to 55 0 MHz 0.4 dB
S11 input return losses f=40to80MHz 20 dB
f = 80 to 160 MHz 19 dB
f=160to550MHz 18 dB
S22 output return losses f = 4 0 to 80 MHz 20 dB
f = 80 to 160 MHz 19 dB
f=160to550MHz 18 dB
CTB composite triple beat 77 channels flat; Vo=44dBmV;
measured at 547.25 MHz
57 dB
Xmod cross modulation 77 channels flat; Vo=44dBmV;
measured at 55.25 MHz
60 dB
CSO composite second order
distortion 77 channels flat; Vo=44dBmV;
measured at 548.5 MHz
57 dB
d2second order distortion note 1 68 dB
Vooutput voltage dim =60 dB; note 2 61 dBmV
F noise figure f = 550 MHz 6.5 dB
Itot total current consump tion DC value; VB= +24 V; note 3 340 mA
2001 Oct 22 4
NXP Semiconductors Product specification
550 MHz, 27 dB gain push-pull amplifier BGY587B
PACKAGE OUTLINE
UNIT A2
max. cee
1q
Q
max. q1q2U2
U1W
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm 20.8 9.5 0.51
0.38 0.25 27.2 2.04
2.54 13.75 2.54 5.08 12.7 8.8 4.15
3.85 2.4 38.1 25.4 10.2 4.2 44.75
44.25 8.2
7.8 0.25 0.1 3.8
bF
p
6-32
UNC
yw
0.7
x
S
DIMENSIONS (mm are the original dimensions)
SOT115J
0 5 10 mm
scale
A
max. D
max. L
min.
E
max. Z
max.
Rectangular single-ended package; aluminium flange; 2 vertical mounting holes;
2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads SOT115J
D
U1q
q2
q1
b
F
S
A
Z p
E
A2
L
c
d
Q
U2
M
w
78923
Wee1
5
p
1
d
xMB
yMB
B
04-02-04
10-06-18
yMB
2001 Oct 22 5
NXP Semiconductors Product specification
550 MHz, 27 dB gain push-pull amplifier BGY587B
DATA SHEET STATUS
Notes
1. Please consult the most rec ently issued document before initiating or completing a design.
2. The product s tatus of device(s) described in this document may have changed since this document was pub lis hed
and may differ in case of multiple devices. The latest product status information is available on th e Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for product
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the pr oduct specification.
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respect.
2001 Oct 22 6
NXP Semiconductors Product specification
550 MHz, 27 dB gain push-pull amplifier BGY587B
Limiting values Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ratings only and
(proper) operat ion of the device at these or any othe r
conditions above those given in the Recommended
operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will
permanently and irreversibly affect the qual ity and
reliability of the device.
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Semiconductors products are sold subject to the general
terms and conditio ns of commercial sale, as published at
http://www.nxp.com/profile/terms, unless otherwise
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individual agreeme nt is co nc luded only the terms and
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Semiconductors hereby expressly objects to apply i ng the
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Quick refer ence data The Quick reference data is an
extract of th e product data given in the Li miting values and
Characteristics sections of this document, and as such is
not complete, exhaus tive or legally binding.
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qualified prod ucts in automotive equip ment or
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In the event that customer uses the product for design-in
and use in automotive applications to automotive
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product for suc h aut omo tive applications, use and
specifications, and (b) whenever customer uses the
product for automotive applications beyo nd NXP
Semiconductors’ specifications such use shall be solely at
customer’s own ris k, an d (c) customer fully inde m nif i es
NXP Semiconductors for an y liability, damages or failed
product clai ms r esult ing fr om cus to mer d esi gn an d us e of
the product for automotive ap plic ations beyond NXP
Semiconductors ’ st andard warranty and NXP
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© NXP B.V. 2010
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this do cum en t d oes not form part o f an y q uotation or contra ct, is b elieve d t o b e a ccur ate a nd re liable and may be changed
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This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimer s. No cha ng es were made to the technic al content, except for package outline
drawings which were updated to the latest version.
Printed in The Netherlands 613518/03/pp7 Date of release: 2001 Oct 22 Document order number: 9397 750 08 803
