NPN Silicon AF Transistors BC 817 BC 818 For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC 807, BC 808 (PNP) Type Marking Ordering Code Pin Configuration 1 2 3 Package1) BC 817-16 BC 817-25 BC 817-40 BC 818-16 BC 818-25 BC 818-40 6As 6Bs 6Cs 6Es 6Fs 6Gs Q62702-C1732 Q62702-C1690 Q62702-C1738 Q62702-C1739 Q62702-C1740 Q62702-C1505 B SOT-23 1) E C For detailed information see chapter Package Outlines. Semiconductor Group 1 07.94 BC 817 BC 818 Maximum Ratings Parameter Symbol Values BC 818 BC 817 Unit Collector-emitter voltage VCE0 45 25 Collector-base voltage VCB0 50 30 Emitter-base voltage VEB0 5 5 Collector current IC 500 Peak collector current ICM 1 Base current IB 100 Peak base current IBM 200 Total power dissipation, TC = 79 C Ptot 330 mW Junction temperature Tj 150 C Storage temperature range Tstg V mA A mA - 65 ... + 150 Thermal Resistance Junction - ambient1) Rth JA 285 Junction - soldering point Rth JS 215 1) Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mm/6 cm2 Cu. Semiconductor Group 2 K/W BC 817 BC 818 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BC 817 BC 818 V(BR)CE0 Collector-base breakdown voltage IC = 100 A BC 817 BC 818 V(BR)CB0 Emitter-base breakdown voltage, IE = 10 A V(BR)EB0 Collector cutoff current VCB = 25 V VCB = 25 V, TA = 150 C ICB0 Emitter cutoff current, VEB = 4 V IEB0 DC current gain1) IC = 100 mA; VCE = 1 V BC 817-16, BC 818-16 BC 817-25, BC 818-25 BC 817-40, BC 818-40 IC = 300 mA; VCE = 1 V BC 817-16, BC 818-16 BC 817-25, BC 818-25 BC 817-40, BC 818-40 hFE Collector-emitter saturation voltage1) IC = 500 mA; IB = 50 mA Base-emitter saturation voltage1) IC = 500 mA; IB = 50 mA V 45 25 - - - - 50 30 - - - - 5 - - - - - - 100 50 nA A - - 100 nA - 100 160 250 160 250 350 250 400 630 60 100 170 - - - - - - VCEsat - - 0.7 VBEsat - - 2 Transition frequency IC = 50 mA, VCE = 5 V, f = 20 MHz fT - 170 - MHz Output capacitance VCB = 10 V, f = 1 MHz Cobo - 6 - pF Input capacitance VEB = 0.5 V, f = 1 MHz Cibo - 60 - V AC characteristics 1) Pulse test: t 300 s, D 2 %. Semiconductor Group 3 BC 817 BC 818 Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Transition frequency fT = f (IC) VCE = 5 V Permissible pulse load Ptot max/Ptot DC = f (tp) Collector cutoff current ICB0 = f (TA) VCB0 = 60 V Semiconductor Group 4 BC 817 BC 818 Base-emitter saturation voltage IC = f (VBEsat) hFE = 10 Collector-emitter saturation voltage IC = f (VCEsat) hFE = 10 DC current gain hFE = f (IC) VCE = 1 V Semiconductor Group 5