Semiconductor Group 1
NPN Silicon AF Transistors BC 817
BC 818
Type Ordering CodeMarking Package1)
Pin Configuration
BC 817-16
BC 817-25
BC 817-40
BC 818-16
BC 818-25
BC 818-40
Q62702-C1732
Q62702-C1690
Q62702-C1738
Q62702-C1739
Q62702-C1740
Q62702-C1505
6As
6Bs
6Cs
6Es
6Fs
6Gs
SOT-23
B E C
123
1) For detailed information see chapter Package Outlines.
●For general AF applications
●High collector current
●High current gain
●Low collector-emitter saturation voltage
●Complementary types: BC 807, BC 808 (PNP)
07.94
Semiconductor Group 2
BC 817
BC 818
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage VCE0 V
Peak collector current ICM A
Collector current ICmA
Junction temperature Tj˚C
Total power dissipation, TC = 79 ˚C Ptot mW
Storage temperature range Tstg
Collector-base voltage VCB0
Thermal Resistance
Junction - ambient1) Rth JA ≤ 285 K/W
500
1
330
150
– 65 … + 150
Emitter-base voltage VEB0
Base current IBmA100
45 25
50 30
BC 817 BC 818
Peak base current IBM 200
55
Junction - soldering point Rth JS ≤ 215
1) Package mounted on epoxy pcb 40 mm ×40 mm ×1.5 mm/6 cm2 Cu.
Semiconductor Group 3
BC 817
BC 818
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
–
DC current gain1)
I
C = 100 mA; VCE = 1 V
BC 817-16, BC 818-16
BC 817-25, BC 818-25
BC 817-40, BC 818-40
I
C = 300 mA; VCE = 1 V
BC 817-16, BC 818-16
BC 817-25, BC 818-25
BC 817-40, BC 818-40
hFE
100
160
250
60
100
170
160
250
350
–
–
–
250
400
630
–
–
–
VCollector-emitter breakdown voltage
I
C = 10 mA BC 817
BC 818
V(BR)CE0
45
25 –
––
–
nA
µA
Collector cutoff current
VCB = 25 V
VCB = 25 V, TA = 150 ˚C
ICB0 –
––
–100
50
UnitValuesParameter Symbol
min. typ. max.
DC characteristics
Collector-base breakdown voltage
I
C = 100 µABC 817
BC 818
V(BR)CB0
50
30 –
––
–
Emitter-base breakdown voltage, IE = 10 µAV(BR)EB0 5––
V
Collector-emitter saturation voltage1)
I
C = 500 mA; IB = 50 mA VCEsat – – 0.7
Base-emitter saturation voltage1)
I
C = 500 mA; IB = 50 mA VBEsat ––2
nAEmitter cutoff current, VEB = 4 V IEB0 – – 100
MHzTransition frequency
I
C = 50 mA, VCE = 5 V, f = 20 MHz fT– 170 –
AC characteristics
pFOutput capacitance
VCB = 10 V, f = 1 MHz Cobo –6–
Input capacitance
VEB = 0.5 V, f = 1 MHz Cibo –60–
1) Pulse test: t≤300 µs, D≤ 2%.
Semiconductor Group 4
BC 817
BC 818
Total power dissipation Ptot =f(TA*; TS)
* Package mounted on epoxy
Permissible pulse load Ptot max/Ptot DC =f(tp)
Transition frequency fT=f(IC)
VCE = 5 V
Collector cutoff current ICB0 =f(TA)
VCB0 = 60 V
Semiconductor Group 5
BC 817
BC 818
Base-emitter saturation voltage
IC=f(VBEsat)
hFE = 10
DC current gain hFE =f(IC)
VCE = 1 V
Collector-emitter saturation voltage
IC=f(VCEsat)
hFE = 10
