PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSE113 QSE114 PACKAGE DIMENSIONS 0.175 (4.44) 0.087 (2.22) O 0.065 (1.65) 0.050 (1.27) 0.200 (5.08) O 0.095 (2.41) 0.500 (12.70) MIN COLLECTOR EMITTER 0.020 (0.51) SQ. (2X) SCHEMATIC Collector 0.100 (2.54) 0.030 (0.76) 0.100 (2.54) NOM NOTES: 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of .010 (.25) on all non-nominal dimensions unless otherwise specified. Emitter DESCRIPTION The QSE113/114 is a silicon phototransistor encapsulated in a wide angle, infrared transparent, black plastic sidelooker package. FEATURES * * * * * * * NPN silicon phototransistor Package type: Sidelooker Medium wide reception angle, 50 Package material and color: black epoxy Matched emitter: QEE113 Daylight filter High sensitivity (c) 2002 Fairchild Semiconductor Corporation Page 1 of 4 5/1/02 PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSE113 QSE114 ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise specified) Parameter Symbol Rating Unit Operating Temperature TOPR -40 to +100 C Storage Temperature TSTG -40 to +100 C (Iron)(2,3,4) TSOL-I 240 for 5 sec C Soldering Temperature (Flow)(2,3) TSOL-F 260 for 10 sec C Collector Emitter Voltage VCE 30 V Emitter Collector Voltage VEC 5 V PD 100 mW Soldering Temperature Power Dissipation(1) NOTES: 1. Derate power dissipation linearly 1.33 mW/C above 25C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Soldering iron 1/16" (1.6 mm) minimum from housing. 5. = 880 nm (AlGaAs). ELECTRICAL / OPTICAL CHARACTERISTICS (TA =25C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Units Peak Sensitivity PS -- 880 -- nM Reception Angle -- 25 -- Deg. ICEO -- -- 100 nA Collector Emitter Dark Current VCE = 10 V, Ee = 0 Collector-Emitter Breakdown IC = 1 mA BVCEO 30 -- -- V Emitter-Collector Breakdown IE = 100 A BVECO 5 -- -- V Ee = 0.5 mW/cm2, VCE = 5 V IC(ON) 0.25 -- 1.50 mA On-State Collector Current(5) QSE114 Ee = 0.5 mW/cm2, VCE = 5 V IC(ON) 1.00 -- -- mA Saturation Voltage(5) Ee = 0.5 mW/cm2, IC = 0.1 mA VCE(SAT) -- -- 0.4 V tr -- 8 -- s tf -- 8 -- s On-State Collector QSE113 Rise Time Fall Time Current(5) IC = 1mA, VCC = 5V, RL = 100 (c) 2002 Fairchild Semiconductor Corporation Page 2 of 4 5/1/02 PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSE113 QSE114 Figure 1. Light Current vs. Radiant Intensity 101 Figure 2. Angular Response Curve I C(ON) - Light Current (mA) VCE = 5V GaAs Light Source 110 100 90 80 70 120 60 130 50 40 140 100 30 150 20 160 10 170 180 1.0 10-1 0.1 0.6 0.8 0.4 0.2 0.0 0.2 0.4 0.6 0.8 0 1.0 1 2 Ee - Radiant Intensity (mW/cm ) Figure 3. Dark Current vs. Collector - Emitter Voltage Figure 4. Light Current vs. Collector - Emitter Voltage 101 I L - Normalized Light Current I CEO - Dark Current (nA) 101 100 10-1 10-2 Ie = 1mW/cm 2 Ie = 0.5mW/cm 2 100 Ie = 0.2mW/cm 2 Ie = 0.1mW/cm 2 10-1 Normalized to: VCE = 5V Ie = 0.5mW/cm 2 TA = 25C 10-3 0 5 10 15 20 25 30 10-2 0.1 1 10 VCE - Collector-Emitter Voltage (V) VCE - Collector-Emitter Voltage (V) Figure 5. Dark Current vs. Ambient Temperature 104 I CEO - Normalized Dark Current Normalized to: VCE = 25V 103 VCE = 25V TA = 25C VCE = 10V 102 101 100 10-1 25 50 75 100 TA - Ambient Temperature ( C) (c) 2002 Fairchild Semiconductor Corporation Page 3 of 4 5/1/02 PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSE113 QSE114 DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. (c) 2002 Fairchild Semiconductor Corporation 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Page 4 of 4 5/1/02