PACKAGE DIMENSIONS
SCHEMATIC
PLASTIC SILICON
INFRARED PHOTOTRANSISTOR
QSE113 QSE114
5/1/02
Page 1 of 4
© 2002 Fairchild Semiconductor Corporation
DESCRIPTION
The QSE113/114 is a silicon phototransistor encapsulated in a wide angle, infrared transparent, black plastic sidelooker package.
FEATURES
• NPN silicon phototransistor
• Package type: Sidelooker
• Medium wide reception angle, 50°
• Package material and color: black epoxy
• Matched emitter: QEE113
• Daylight filter
• High sensitivity
0.175 (4.44)
0.200 (5.08)0.050 (1.27)
0.020 (0.51) SQ.
(2X)
0.500 (12.70)
MIN
Ø 0.065 (1.65)
Ø 0.095 (2.41)
0.100 (2.54)
0.100 (2.54)
NOM
0.030 (0.76)
0.087 (2.22)
EMITTER COLLECTOR
Collector
Emitter
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions unless
otherwise specified.
5/1/02
Page 2 of 4
© 2002 Fairchild Semiconductor Corporation
PLASTIC SILICON
INFRARED PHOTOTRANSISTOR
QSE113 QSE114
NOTES:
1. Derate power dissipation linearly 1.33 mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16" (1.6 mm) minimum from housing.
5.
λ
= 880 nm (AlGaAs).
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter Symbol Rating Unit
Operating Temperature T
OPR
-40 to +100 °C
Storage Temperature T
STG
-40 to +100 °C
Soldering Temperature (Iron)
(2,3,4)
T
SOL-I
240 for 5 sec °C
Soldering Temperature (Flow)
(2,3)
T
SOL-F
260 for 10 sec °C
Collector Emitter Voltage V
CE
30 V
Emitter Collector Voltage V
EC
5V
Power Dissipation
(1)
P
D
100 mW
ELECTRICAL / OPTICAL CHARACTERISTICS
(T
A
=25°C unless otherwise specified)
Parameter Test Conditions Symbol Min Typ Max Units
Peak Sensitivity
λ
PS
—880 —nM
Reception Angle
Θ
—±25 —Deg.
Collector Emitter Dark Current V
CE
= 10 V, E
e
= 0 I
CEO
——100 nA
Collector-Emitter Breakdown I
C
= 1 mA BV
CEO
30 —— V
Emitter-Collector Breakdown I
E
= 100 µA BV
ECO
5—— V
On-State Collector Current
(5)
QSE113 E
e
= 0.5 mW/cm
2
, V
CE
= 5 V I
C(ON)
0.25 —1.50 mA
On-State Collector Current
(5)
QSE114 E
e
= 0.5 mW/cm
2
, V
CE
= 5 V I
C(ON)
1.00 ——mA
Saturation Voltage
(5)
E
e
= 0.5 mW/cm
2
, I
C
= 0.1 mA V
CE(SAT)
——0.4 V
Rise Time I
C
= 1mA, V
CC
= 5V, R
L
= 100
Ω
t
r
—8—µs
Fall Time t
f
—8—µs
5/1/02
Page 3 of 4
© 2002 Fairchild Semiconductor Corporation
PLASTIC SILICON
INFRARED PHOTOTRANSISTOR
QSE113 QSE114
Figure 1. Light Current vs. Radiant Intensity
Figure 3. Dark Current vs. Collector - Emitter Voltage Figure 4. Light Current vs. Collector - Emitter Voltage
Figure 5. Dark Current vs. Ambient Temperature
Figure 2. Angular Response Curve
Ee - Radiant Intensity (mW/cm2)
0.1 1
I
C(ON)
- Light Current (mA)
10-1
100
101
VCE = 5V
GaAs Light Source
0.0 0.2 0.4 0.6 0.8 1.0
0.0
0.2
0.4
0.6
0.8
1.0
0
10
20
30
40
50
60
70
80
90
100
110
120
130
140
150
160
170
180
VCE - Collector-Emitter Voltage (V)
0 5 10 15 20 25 30
I
CEO
- Dark Current (nA)
10-3
10-2
10-1
100
101
VCE - Collector-Emitter Voltage (V)
0.1 1 10
I
L
- Normalized Light Current
10-2
10-1
100
101
Normalized to:
VCE = 5V
Ie = 0.5mW/cm2
TA= 25°C
Ie = 0.5mW/cm 2
Ie = 0.2mW/cm 2
Ie = 0.1mW/cm 2
Ie = 1mW/cm 2
TA - Ambient Temperature ( °C)
25 50 75 100
I
CEO
- Normalized Dark Current
10-1
100
101
102
103
104
Normalized to:
VCE = 25V
TA= 25°C
VCE = 25V
VCE = 10V
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
CORPORATION. As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body, or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in a significant injury of the user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
5/1/02
Page 4 of 4
© 2002 Fairchild Semiconductor Corporation
PLASTIC SILICON
INFRARED PHOTOTRANSISTOR
QSE113 QSE114
