BFR30LT1, BFR31LT1 JFET Amplifiers N-Channel Features * Pb-Free Package is Available http://onsemi.com 2 SOURCE IIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII IIII III IIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII IIII III IIIIIIIIIII IIII IIII III IIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII IIII III IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII IIII III IIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII IIII III IIIIIIIIIII IIII IIII III IIIIIIIIIII IIII IIII III IIIIIIIIIII IIII IIII III IIIIIIIIIII IIII IIII III IIIIIIIIIII IIII IIII III IIIIIIIIIII IIII IIII III IIIIIIIIIII IIII IIII III I II IIIIIIIIIII IIII IIII III IIIIIIIIIII IIII IIII III 3 GATE MAXIMUM RATINGS Rating Symbol Value Unit Drain -Source Voltage VDS 25 Vdc Gate -Source Voltage VGS 25 Vdc 1 DRAIN MARKING DIAGRAM Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Total Device Dissipation (Note 1) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature Symbol Max Unit 225 1.8 mW mW/C 556 C/W 300 2.4 mW mW/C 417 C/W 3 1 SOT-23 CASE 318 STYLE 10 2 1 PD RJA PD RJA TJ, Tstg x M = 1 or 2 = Date Code ORDERING INFORMATION Device Package Shipping BFR30LT1 SOT-23 3000/Tape & Reel SOT-23 (Pb-Free) 3000/Tape & Reel SOT-23 3000/Tape & Reel SOT-23 (Pb-Free) 3000/Tape & Reel BFR30LT1G C -55 to +150 1. Device mounted on FR4 glass epoxy printed circuit board using the recommended footprint. 2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina. MxM BFR31LT1 BFR31LT1G For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2005 February, 2005 - Rev. 4 1 Publication Order Number: BFR30LT1/D BFR30LT1, BFR31LT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit Gate Reverse Current (VGS = 10 Vdc, VDS = 0) IGSS - 0.2 nAdc Gate Source Cutoff Voltage (ID = 0.5 nAdc, VDS = 10 Vdc) BFR30 BFR31 VGS(OFF) - - 5.0 2.5 Vdc Gate Source Voltage (ID = 1.0 mAdc, VDS = 10 Vdc) BFR30 BFR31 BFR30 BFR31 VGS -0.7 - - - -3.0 -1.3 -4.0 -2.0 Vdc BFR30 BFR31 IDSS 4.0 1.0 10 5.0 mAdc 1.0 1.5 0.5 0.75 4.0 4.5 - - 40 20 25 15 OFF CHARACTERISTICS (ID = 50 Adc, VDS = 10 Vdc) ON CHARACTERISTICS Zero -Gate -Voltage Drain Current (VDS = 10 Vdc, VGS = 0) SMALL-SIGNAL CHARACTERISTICS yfs Forward Transconductance (ID = 1.0 mAdc, VDS = 10 Vdc, f = 1.0 kHz) BFR30 BFR31 BFR30 BFR31 (ID = 200 Adc, VDS = 10 Vdc, f = 1.0 kHz) mmhos yos Output Admittance (ID = 1.0 mAdc, VDS = 10 Vdc, f = 1.0 kHz) (ID = 200 Adc, VDS = 10 Vdc) BFR30 BFR31 mhos Input Capacitance (ID = 1.0 mAdc, VDS = 10 Vdc, f = 1.0 MHz) (ID = 200 Adc, VDS = 10 Vdc, f = 1.0 MHz) Ciss - - 5.0 4.0 pF Reverse Transfer Capacitance (ID = 1.0 mAdc, VDS = 10 Vdc, f = 1.0 MHz) (ID = 200 Adc, VDS = 10 Vdc, f = 1.0 MHz) Crss - - 1.5 1.5 pF TYPICAL CHARACTERISTICS 14 VDS = 15 V VGS = 0 RS = 1 M 4 VDS = 15 V VGS = 0 f = 1 kHz 12 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 5 3 2 10 8 6 4 1 2 0 0.01 0.1 1.0 f, FREQUENCY (kHz) 0 100 10 0.001 Figure 1. Noise Figure versus Frequency 0.01 0.1 1.0 RS, SOURCE RESISTANCE (Megohms) Figure 2. Noise Figure versus Source Resistance http://onsemi.com 2 10 BFR30LT1, BFR31LT1 TYPICAL CHARACTERISTICS 1.2 VGS(OFF) -1.2 V 1.2 VGS(OFF) -1.2 V VGS = 0 V 1.0 -0.2 V 0.8 0.6 -0.4 V 0.4 -0.6 V 0 VDS = 15 V 0.6 0.4 0 -1.2 25 5 10 15 20 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 0.8 0.2 -0.8 V -1.0 V 0.2 0 I D , DRAIN CURRENT (mA) I D , DRAIN CURRENT (mA) 1.0 Figure 3. Typical Drain Characteristics 0 Figure 4. Common Source Transfer Characteristics 5 5 VGS = 0 V VGS(OFF) -3.5 V 4 I D , DRAIN CURRENT (mA) I D , DRAIN CURRENT (mA) -0.8 -0.4 VGS, GATE-SOURCE VOLTAGE (VOLTS) VGS(OFF) -3.5 V 3 -1 V 2 -2 V 1 4 3 VDS = 15 V 2 1 -3 V 0 0 5 10 15 20 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 0 -5 25 Figure 5. Typical Drain Characteristics 10 VGS(OFF) -5.8 V I D , DRAIN CURRENT (mA) I D , DRAIN CURRENT (mA) VGS = 0 V -1 V 6 -2 V 4 -3 V 2 0 Figure 6. Common Source Transfer Characteristics 10 8 -3 -2 -1 -4 VGS, GATE-SOURCE VOLTAGE (VOLTS) -4 V VGS(OFF) -5.8 V 8 6 VDS = 15 V 4 2 -5 V 0 -7 0 0 5 10 15 20 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 25 Figure 7. Typical Drain Characteristics -6 -5 -4 -3 -2 -1 VGS, GATE - SOURCE VOLTAGE (VOLTS) Figure 8. Common Source Transfer Characteristics Note: Graphical data is presented for dc conditions. Tabular data is given for pulsed conditions (Pulse Width = 630 ms, Duty Cycle = 10%). Under dc conditions, self heating in higher IDSS units reduces IDSS. http://onsemi.com 3 0 BFR30LT1, BFR31LT1 PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AK NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318-01 THRU -07 AND -09 OBSOLETE, NEW STANDARD 318-08. A L 3 1 V B S 2 DIM A B C D G H J K L S V G C D H J K INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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