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F5018 FUJI Intelligent Power MOSFET
Intelligent Power MOSFET
Features
• Over temperature protection
• Short circuit protection
• Low on-resistance
• High speed switching
Applications
• Solenoid driver
• Lamp driver
• Replacements for fuse and relay
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C, unless otherwise speci ed)
Description Symbol Characteristics Unit Remarks
Drain-source voltage V
DSS
40 V DC
Gate-source voltage V
GSS
DC-0.3~7.0 VDC
Continuous drain current I
D
8A Tc=25˚C
Maximum power dissipation P
D
15 W Tc=2C
Operating junction temperature T
j
150 °C
Storage temperature range T
stg
-55 ~ 150 °C
Single pulse inductive load switch-off energy dissipation E
CL
100 mJ T
J
=150°C, L=5mH, I
D
=8A
Single pulse, dv/dt10V/μs
Outline drawings [mm]
Connection
Electrical characteristics (at Tc=25°C unless otherwise speci ed)
Description Symbol Conditions min. typ. max. Unit
Drain-source clamp voltage V
DSS
I
D
=1mA, V
GS
=0V 40 60 V
Gate threshold voltage V
GS
(th) I
D
=10mA, V
DS
=13V 1.0 2.8 V
Operation gate voltage V
GS
(p) 3.0 7.0 V
Zero gate voltage drain current I
DSS
V
DS
=30V, V
GS
=0V ––
1.0 mA
Gate-sourse leakage current I
GS
(n)*V
GS
=5V
––
500 μA
I
GS
(un)** ––
800 μA
Drain-source on-state resistance R
DS
(on) ID=5A, V
GS
=5V ––
140 mΩ
Turn- on time t
on
V
DS
=13V, R
L
=2.6Ω, V
GS
=5V
––
200 μs
Turn- of f time t
off
––
200 μs
Over-temperature protection T
trip
V
CC
=13V, V
GS
=5V 150 ––
˚C
Short circuit protection I
OC
V
CC
=13V, V
GS
=5V 12 ––
A
Note * : Under normal operation
Note ** : Under self protection
Thermal resistance
Description Symbol Test conditions min. typ. max. Unit
Thermal resistance Rth (j-c) Junction-case ––
8.3 °C/W
Rth (j-a) Junction-ambient ––
125 °C/W
K-pack(s)
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Electrical characteristics (at Tc=-40~105°C, unless otherwise speci ed)
Description Symbol Conditions min. typ. max. Unit
Drain-source clamp voltage V
DSS
I
D
=1mA, V
GS
=0V 38 62 V
Gate threshold voltage V
GS
(th) I
D
=10mA, V
DS
=13V 1.0 3.0 V
Operation gate voltage (protection circuit operates) V
GS
(p) 3.0 6.7 V
Zero gate voltage drain current I
DSS
V
DS
=13V, V
GS
=0V ––
170 μA
V
DS
=30V, V
GS
=0V ––
1.6 mA
Gate-sourse leakage current I
GS
(n) V
GS
=5V* ––
600 μA
I
GS
(un) V
GS
=5V, Tj>150˚C** ––
940 μA
Drain-source on-state resistance R
DS
(on) ID=5A, V
GS
=5V ––
205 mΩ
Turn- on time t
on
V
DS
=13V, I
D
=5A, V
GS
=5V
––
240 μs
Turn- of f time t
off
––
220 μs
Short circuit protection I
OC
V
GS
=5V 8.4 ––
A
Note * : Under normal operation
Note ** : Under self protection (Short circuit ~ Short circuit protection ~ Over-temperature protection)
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2
F5018 FUJI Intelligent Power MOSFET
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Timing chart
Circuit block diagram
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3
FUJI Intelligent Power MOSFET
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F5018
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4
F5018 FUJI Intelligent Power MOSFET
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5
FUJI Intelligent Power MOSFET
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F5018
WARNING
1. This Catalog contains the product speci cations, characteristics, data, materials, and structures as of March 2010.
The contents are subject to change without notice for speci cation changes or other reasons. When using a product listed in this
Catalog, be sure to obtain the latest speci cations.
2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either
express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Systems Co., Ltd.
is (or shall be deemed) granted. Fuji Electric Systems Co., Ltd. makes no representation or
warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which
may arise from the use of the applications described herein.
3. Although Fuji Electric Systems Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor
products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take
adequate safety measures to prevent the equipment from causing a physical injury, re, or other problem if any of the products
become faulty. It is recommended to make your design fail-safe, ame retardant, and free of malfunction.
4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has
normal reliability requirements.
• Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment
• Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc.
5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed
below, it is imperative to contact Fuji Electric Systems Co., Ltd. to obtain prior approval. When using these products for
such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's
product incorporated in the equipment becomes faulty.
• Transportation equipment (mounted on cars and ships) • Trunk communications equipment
• Traf c-signal control equipment • Gas leakage detectors with an auto-shut-off feature
• Emergency equipment for responding to disasters and anti-burglary devices • Safety devices
• Medical equipment
6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic
equipment (without limitation).
• Space equipment • Aeronautic equipment • Nuclear control equipment
• Submarine repeater equipment
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No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Systems Co., Ltd.
8. If you have any question about any portion in this Catalog, ask Fuji Electric Systems Co., Ltd. or its sales agents before
using the product.
Neither Fuji Electric Systems Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in
accordance with instructions set forth herein.
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