052-6216 Rev E 5-2006
APT50GF120B2_LR(G)
TYPICAL PERFORMANCE CURVES
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.
Symbol
VCES
VGE
IC1
IC2
ICM
SSOA
PD
TJ,TSTG
TL
APT50GF120B2_LR(G)
1200
±30
135
75
150
150A @ 1200V
781
-55 to 150
300
UNIT
Volts
Amps
Watts
°C
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current 7 @ TC = 25°C
Continuous Collector Current @ TC = 100°C
Pulsed Collector Current 1
Switching Safe Operating Area @ TJ = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
The Fast IGBT is a new generation of high voltage power IGBTs. Using
Non-Punch through technology, the Fast IGBToffers superior ruggedness,
fast switching speed and low Collector-Emitter On voltage.
• Low Forward Voltage Drop • High Freq. Switching to 20KHz
• RBSOA and SCSOA Rated • Ultra Low Leakage Current
• Intergrated Gate Resistor: Low EMI, High Reliability
FAST IGBT
1200V
APT50GF120B2R APT50GF120LR
APT50GF120B2RG* APT50GF120LRG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
(L)
(B2)
TO-264
T-Max
®
G
C
E
STATIC ELECTRICAL CHARACTERISTICS
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 500µA)
Gate Threshold Voltage (VCE = VGE, IC = 700µA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 50A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 50A, Tj = 125°C)
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) 2
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) 2
Gate-Emitter Leakage Current (VGE = ±20V)
Intergrated Gate Resistor
Symbol
V(BR)CES
VGE(TH)
VCE(ON)
ICES
IGES
RG(int)
Units
Volts
µA
nA
Ω
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
MIN TYP MAX
1200
4.5 5.5 6.5
2.5 3.0
3.1
100
1000
±100
5
Microsemi Website - http://www.microsemi.com
052-6216 Rev E 5-2006
APT50GF120B2_LR(G)
DYNAMIC CHARACTERISTICS
Symbol
Cies
Coes
Cres
VGEP
Qg
Qge
Qgc
SSOA
td(on)
tr
td(off)
tf
Eon1
Eon2
Eoff
td(on)
tr
td(off)
tf
Eon1
Eon2
Eoff
Test Conditions
Capacitance
VGE = 0V, VCE = 25V
f = 1 MHz
Gate Charge
VGE = 15V
VCE = 600V
IC = 50A
TJ = 150°C, RG = 1.0Ω, 7 VGE =
15V, L = 100µH,VCE = 1200V
Inductive Switching (25°C)
VCC = 800V
VGE = 15V
IC = 50A
RG = 1.0Ω 7
TJ = +25°C
Inductive Switching (125°C)
VCC = 800V
VGE = 15V
IC = 50A
RG = 1.0Ω 7
TJ = +125°C
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge 3
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
Switching Safe Operating Area
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 4
Turn-on Switching Energy (With Diode) 5
Turn-off Switching Energy 6
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 4 4
Turn-on Switching Energy (With Diode) 55
Turn-off Switching Energy 6
MIN TYP MAX
3460
385
225
9.5
340
30
205
150
25
43
260
70
3600
4675
2640
25
43
300
95
3750
6400
3400
UNIT
pF
V
nC
A
ns
µJ
ns
µJ
THERMAL AND MECHANICAL CHARACTERISTICS
UNIT
°C/W
gm
MIN TYP MAX
.16
N/A
6.1
Characteristic
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
Symbol
RθJC
RθJC
WT
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, Ices includes both IGBT and diode leakages
3 See MIL-STD-750 Method 3471.
4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.
5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
7 RG is external gate resistance, not including RG(int) nor gate driver impedance. (MIC4452)
Mircosemi Reserves the right to change, without notice, the specifications and information contained herein.
052-6216 Rev E 5-2006
APT50GF120B2_LR(G)
TYPICAL PERFORMANCE CURVES
VGS(TH), THRESHOLD VOLTAGE VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
(NORMALIZED)
IC, DC COLLECTOR CURRENT(A) VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) VGE, GATE-TO-EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A)
250µs PULSE
TEST<0.5 % DUTY
CYCLE
160
140
120
100
80
60
40
20
0
160
140
120
100
80
60
40
20
0
5
4
3
2
1
0
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
0 1 2 3 4 5 6 0 5 10 15 20
0 2 4 6 8 10 12 14 0 50 100 150 200 250 300 350 400
8 10 12 14 16 0 25 50 75 100 125 150
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
180
160
140
120
100
80
60
40
20
0
16
14
12
10
8
6
4
2
0
5
4
3
2
1
0
180
160
140
120
100
80
60
40
20
0
VCE, COLLECTER-TO-EMITTER VOLTAGE (V) VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(TJ = 25°C) FIGURE 2, Output Characteristics (TJ = 125°C)
VGE, GATE-TO-EMITTER VOLTAGE (V) GATE CHARGE (nC)
FIGURE 3, Transfer Characteristics FIGURE 4, Gate Charge
VGE, GATE-TO-EMITTER VOLTAGE (V) TJ, Junction Temperature (°C)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage FIGURE 6, On State Voltage vs Junction Temperature
TJ, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)
FIGURE 7, Threshold Voltage vs. Junction Temperature FIGURE 8, DC Collector Current vs Case Temperature
15V
12V
11V
9V
13V
8V
VGE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
TJ = 125°C
TJ = 25°C
TJ = -55°C
TJ = 125°C
TJ = 25°C
TJ = -55°C
VGE = 15V
VCE = 960V
VCE = 600V
VCE = 240V
IC = 50A
TJ = 25°C
TJ = 25°C.
250µs PULSE TEST
<0.5 % DUTY CYCLE
10V
IC = 100A
IC = 50A
IC = 25A
IC = 100A
IC = 50A
IC = 25A
Lead limited
052-6216 Rev E 5-2006
APT50GF120B2_LR(G)
VGE =15V,TJ=125°C
VGE =15V,TJ=25°C
VCE = 800V
RG = 1.0Ω
L = 100µH
SWITCHING ENERGY LOSSES (mJ) EON2, TURN ON ENERGY LOSS (mJ) tr, RISE TIME (ns) td(ON), TURN-ON DELAY TIME (ns)
SWITCHING ENERGY LOSSES (mJ) EOFF, TURN OFF ENERGY LOSS (mJ) tf, FALL TIME (ns) td (OFF), TURN-OFF DELAY TIME (ns)
ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current FIGURE 10, Turn-Off Delay Time vs Collector Current
ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current FIGURE 12, Current Fall Time vs Collector Current
ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current FIGURE 14, Turn Off Energy Loss vs Collector Current
RG, GATE RESISTANCE (OHMS) TJ, JUNCTION TEMPERATURE (°C)
FIGURE 15, Switching Energy Losses vs. Gate Resistance FIGURE 16, Switching Energy Losses vs Junction Temperature
RG = 1.0Ω, L = 100µH, VCE = 800V
VCE = 800V
TJ = 25°C or 125°C
RG = 1.0Ω
L = 100µH
VGE = 15V
TJ = 25 or 125°C,VGE = 15V
10 30 50 70 90 110 10 30 50 70 90 110
10 30 50 70 90 110 10 30 50 70 90 110
10 30 50 70 90 110 10 30 50 70 90 110
0 5 10 15 20 0 25 50 75 100 125
RG = 1.0Ω, L = 100µH, VCE = 800V
35
30
25
20
15
10
5
0
140
120
100
80
60
40
20
0
25
20
15
10
5
0
35
30
25
20
15
10
5
0
TJ = 125°C, VGE = 15V
TJ = 25°C, VGE = 15V
350
300
250
200
150
100
50
0
120
100
80
60
40
20
0
7
6
5
4
3
2
1
0
25
20
15
10
5
0
VCE = 800V
VGE = +15V
RG = 1.0Ω
TJ = 125°C
TJ = 25°C
VCE = 800V
VGE = +15V
RG = 1.0Ω
TJ = 125°C
TJ = 25°C
VCE = 800V
VGE = +15V
TJ = 125°C
VCE = 800V
VGE = +15V
RG = 1.0ΩEon2,100A
Eoff,100A Eon2,50A
Eoff,50A Eon2,25A
Eoff,25A
Eon2,100A
Eoff,100A Eon2,50A
Eoff,50A
Eon2,25A
Eoff,25A
052-6216 Rev E 5-2006
APT50GF120B2_LR(G)
TYPICAL PERFORMANCE CURVES
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
ZθJC, THERMAL IMPEDANCE (°C/W)
0.3
SINGLE PULSE
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10-5 10-4 10-3 10-2 10-1 1.0
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
10 20 30 40 50 60 70 80
FMAX, OPERATING FREQUENCY (kHz)
IC, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current
TJ = 125°C
D = 50 %
VCE = 800V
RG = 1.0Ω
60
10
5
1
0.5
0.1
0.05
Fmax = min (fmax, fmax2)
0.05
fmax1 =
td(on) + tr + td(off) + tf
Pdiss - Pcond
Eon2 + Eoff
fmax2 =
Pdiss = TJ - TC
RθJC
D = 0.9
0.7
Peak TJ = PDM x ZθJC + TC
Duty Factor D = t1/t2
t2
t1
PDM
Note:
TC = 75°C
TC = 100°C
6,000
1,000
500
100
160
140
120
100
80
60
40
20
0
C, CAPACITANCE (PF)
IC, COLLECTOR CURRENT (A)
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR TO EMITTER VOLTAGE
Figure 17, Capacitance vs Collector-To-Emitter Voltage Figure 18,Minimim Switching Safe Operating Area
0 10 20 30 40 50 0 200 400 600 800 1000 1200 1400
Cres
Cies
Coes
0.0663 0.0941
0.00740 0.252
Dissipated Power
(Watts)
TJ (°C) TC (°C)
ZEXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
ZEXT
052-6216 Rev E 5-2006
APT50GF120B2_LR(G)
APT40DQ120
e1 SAC: Tin, Silver, Copper
T-MAX® (B2) Package Outline
Dimensions in Millimeters and (Inches)
Collector
Emitter
Gate
Collector
19.51 (.768)
20.50 (.807)
19.81 (.780)
21.39 (.842)
25.48 (1.003)
26.49 (1.043)
2.29 (.090)
2.69 (.106)
0.76 (.030)
1.30 (.051)
3.10 (.122)
3.48 (.137)
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
2.59 (.102)
3.00 (.118)
0.48 (.019)
0.84 (.033)
2.29 (.090)
2.69 (.106)
5.79 (.228)
6.20 (.244)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Collector
Emitter
Gate
Collector
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
4.50
(.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
2.87 (.113)
3.12 (.123)
2-Plcs.
e1 SAC: Tin, Silver, Copper
TO-264(L) Package Outline
I
C
A
D.U.T.
V
CE
Figure 21, Inductive Switching Test Circuit
V
CC
Figure 22, Turn-on Switching Waveforms and Definitions
TJ = 125°C
Switching Energy
5%
10%
td(on)
90%
10%
tr
Collector Current
Collector Voltage
Gate Voltage
Figure 23, Turn-off Switching Waveforms and Definitions
TJ = 125°C
Switching Energy
0
90%
td(off)
10%
tf
90%
Collector Voltage
Collector Current
Gate Voltage
Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
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