AUIRF7207Q - International Rectifier

AUIRF7207Q

1 2015-11-16

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and

functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-

maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under

board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.

AUTOMOTIVE GRADE

VDSS -20V

RDS(on) max 0.06

ID -5.4A

Parameter Max. Units

VDS Drain-to-Source Voltage -20 V

ID @ TA = 25°C Continuous Drain Current, VGS @ -10V -5.4

A ID @ TA = 70°C Continuous Drain Current, VGS @ -10V -4.3

IDM Pulsed Drain Current  -43

PD @TA = 25°C Power Dissipation 2.5 W

PD @TA = 70°C Power Dissipation 1.6

Linear Derating Factor 0.02 W/°C

VGS Gate-to-Source Voltage ± 12 V

VGSM Gate-to-Source Voltage Single Pulse tp<10µs -16 V

EAS Single Pulse Avalanche Energy (Thermally Limited)  140

TJ Operating Junction and -55 to + 150 °C 

TSTG Storage Temperature Range



SO-8

Top View



Features

Advanced Process Technology

Low On-Resistance

Logic Level Gate Drive

P-Channel MOSFET

Dynamic dV/dT Rating

150°C Operating Temperature

Fast Switching

Fully Avalanche Rated

Lead-Free, RoHS Compliant

Automotive Qualified*

Description

Specifically designed for Automotive applications, this cellular design

of HEXFET® Power MOSFETs utilizes the latest processing

techniques to achieve low on-resistance per silicon area. This benefit

combined with the fast switching speed and ruggedized device

design that HEXFET power MOSFETs are well known for, provides

the designer with an extremely efficient and reliable device for use in

Automotive and a wide variety of other applications.

Thermal Resistance

Symbol Parameter Typ. Max. Units

RJA Junction-to-Ambient  ––– 50 °C/W

Base part number Package Type Standard Pack Orderable Part Number

Form Quantity

AUIRF7207Q SO-8 Tape and Reel 2500 AUIRF7207QTR

HEXFET® Power MOSFET

HEXFET® is a registered trademark of Infineon.

*Qualification standards can be found at www.infineon.com

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Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified) 

Symbol Parameter Min. Typ. Max. Units Conditions

V(BR)DSS Drain-to-Source Breakdown Voltage -20 ––– ––– V VGS = 0V, ID = -250µA

V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– -0.011 ––– V/°C Reference to 25°C, ID = -1mA

RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.06  VGS = -4.5V, ID = -5.4A 

––– ––– 0.125 VGS = -2.7V, ID = -2.7A 

VGS(th) Gate Threshold Voltage -0.7 ––– -1.6 V VDS = VGS, ID = -250µA

gfs Forward Transconductance 8.3 ––– ––– S VDS = -10V, ID = -5.4A

IDSS Drain-to-Source Leakage Current ––– ––– -1.0 µA VDS = -16V, VGS = 0V

––– ––– -25 VDS = -16V, VGS = 0V, TJ = 125°C

IGSS Gate-to-Source Forward Leakage ––– ––– -100 nA VGS = 12V

Gate-to-Source Reverse Leakage ––– ––– 100 VGS = -12V

Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) 

Symbol Parameter Min. Typ. Max. Units Conditions

Qg Total Gate Charge ––– 15 22

ID = -5.4A

Qgs Gate-to-Source Charge ––– 2.2 3.3

VDS = -10V

Qgd Gate-to-Drain ("Miller") Charge ––– 5.7 8.6 VGS = -4.5V

td(on) Turn-On Delay Time ––– 11 –––

VDD = -10V

tr Rise Time ––– 24 ––– ID = -1.0A

td(off) Turn-Off Delay Time ––– 43 ––– RG = 6.0

tf Fall Time ––– 41 ––– RD = 10

Ciss Input Capacitance ––– 780 –––

VGS = 0V

Coss Output Capacitance ––– 410 ––– VDS = -15V

Crss Reverse Transfer Capacitance ––– 200 ––– ƒ = 1.0 MHz

Diode Characteristics  

Symbol Parameter Min. Typ. Max. Units Conditions

IS Continuous Source Current ––– ––– -3.1 A MOSFET symbol

(Body Diode) showing the

ISM Pulsed Source Current ––– ––– -43 A integral reverse

(Body Diode)  p-n junction diode.

VSD Diode Forward Voltage ––– ––– -1.0 V TJ = 25°C, IS = -3.1A, VGS = 0V

dv/dt Peak Diode Recovery  ––– 5.0 ––– V/ns TJ = 175°C, IS= -3.1A, VDS = -20V

trr Reverse Recovery Time ––– 42 63 ns TJ = 25°C, IF = -3.1A

Qrr Reverse Recovery Charge ––– 50 75 nC di/dt = 100A/µs

Notes:

Repetitive rating; pulse width limited by max. junction temperature.

Starting TJ = 25°C, L = 9.6mH, RG = 25, IAS = -5.4A.

ISD  -5.4A, di/dt  -79A/µs, VDD  V(BR)DSS, TJ  150°C.

Pulse width  300µs; duty cycle  2%.

When mounted on 1 inch square copper board, t<10 sec.

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Fig. 2 Typical Output Characteristics

1 10 100

400

800

1200

1600

-V , Drain- to- Source Voltag e (V)

C, Capacitance (pF)

0V,

f = 1MHz

+ C

C SHORTED

iss gs gd , ds

rss gd

oss ds gd

iss

oss

rss

Fig. 3 Typical Transfer Characteristics

0 5 10 15 20 25 30

Q , Total Gate Charge (nC)

-V , Gate-to-Source Voltage (V)

FOR T EST CIRCUIT

SEE FIGURE

I =

-5.4A

V =-10V

Fig. 4 Normalized On-Resistance vs. Temperature

100

2.0 3.0 4.0 5.0 6.0

V = -10V

20µs PULSE WIDTH

-V , Gate-to- Sour ce Voltag e ( V)

-I , Drain-to-Source Current (A)

T = 25 C

J°

T = 150 C

J°

Fig. 1 Typical Output Characteristics

Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage

100

0.1 1 10

20µs PULSE WIDTH

T = 25 C

J°

TOP

BOTTOM

VGS

-7.00V

-5.00V

-4.50V

-3.50V

-3.00V

-2.70V

-2.50V

-2.25V

-V , Drain- to- Sour ce Voltag e ( V)

-I , Drain-to-Source Current (A)

-2.25V

100

0.1 1 10

20µs PULSE WIDTH

T = 150 C

J°

TOP

BOTTOM

VGS

-7.00V

-5.00V

-4.50V

-3.50V

-3.00V

-2.70V

-2.50V

-2.25V

-V , Dr ain-to- Source Voltage (V)

-I , Drain-to-Source Current (A)

-2.25V

-60 -40 -20 020 40 60 80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

T , Junction Temper ature ( C)

R , Drain-to-Source On Resistance

(Normalized)

DS(on)

V =

I =

-10V

-5.4A

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

25 50 75 100 125 150

100

200

300

400

Star ting T , Juncti on Temper atur e ( C)

E , Single Pulse Avalanche Energy (mJ)

TOP

BOTTOM

-2.4A

-4.3A

-5.4A

Fig 8. Maximum Safe Operating Area

Fig 10. Maximum Avalanche Energy vs. Drain Current

25 50 75 100 125 150

0.0

1.0

2.0

3.0

4.0

5.0

6.0

T , Case Temper atur e ( C)

-I , Drain Current (A)

Fig. 7 Typical Source-to-Drain Diode

Forward Voltage

Fig 9. Maximum Drain Current vs. Case Temperature

0.1

100

0.4 0.6 0.7 0.9 1.1 1.2 1.4

-V ,Source-to-Drain Vol tage (V)

-I , Reverse Drain Current (A)

V = 0 V

T = 25 C

J°

T = 150 C

J°

100

1 10 100

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

Single Pulse

= 150 C

= 25 C

-V , Dr ain-to-Source Voltag e ( V)

-I , Drain Current (A)I , Drain Current (A)

100us

1ms

10ms

Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case

0.1

100

0.00001 0.0001 0.001 0.01 0.1 1 10 100

Notes:

1. Duty factor D =t / t

2. Peak T = P x Z + T

1 2

JDM thJA A

t , Rectang ul ar Pul se Dur ati on ( sec)

Thermal Response (Z )

thJA

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

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

Fig 14. Peak Diode Recovery dv/dt Test Circuit for P-Channel HEXFET® Power MOSFETs

Fig 14a. Unclamped Inductive Test Circuit Fig 14b. Unclamped Inductive Waveforms

Fig 15a. Switching Time Test Circuit Fig 15b. Switching Time Waveforms

Fig 16a. Gate Charge Test Circuit Fig 16b. Gate Charge Waveform

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Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

FO O TPRIN T

8X 0.72 [.028]

6.46 [.255]

3X 1.27 [.050]

4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.

NOTES:

1. D IM EN SIO N IN G & TO LERAN C IN G PER ASM E Y14.5M -1994.

2. CONTROLLING DIM ENSION: M ILLIMETER

3. DIMENSIONS ARE SHOWN IN MILLIM ETERS [INCHES].

5 DIM ENSION DOES NOT INCLUDE MOLD PROTRUSIONS.

6 DIM ENSION DOES NOT INCLUDE MOLD PROTRUSIONS.

M O LD PRO TRU SIO N S N O T TO EXCEED 0.25 [.010].

7 DIM ENSION IS THE LENGTH OF LEAD FOR SOLDERING TO

A SUBSTRATE.

M O LD PRO TRU SIO N S N O T TO EXCEED 0.15 [.006].

8X 1.78 [.070]

.189

.1497

0°

.013

.050 BASIC

.0532

.0040

.2284

.0099

.016

.1968

.1574

8°

.020

.0688

.0098

.2440

.0196

.050

4.80

3.80

0.33

1.35

0.10

5.80

0.25

0.40

0°

1.27 BASIC

5.00

4.00

0.51

1.75

0.25

6.20

0.50

1.27

MIN MAX

MILLIMETERSIN C H ES

MIN MAX

DIM

8°

c .0075 .0098 0.19 0.25

.025 BASIC 0.635 BASIC

D B

0.25 [.010] A

K x 45°

8X L 8X c

0.25 [.010] CAB

8X b

0.10 [.004]

4312

SO-8 Package Outline

Dimensions are shown in millimeters (inches)

SO-8 Part Marking

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SO-8 Tape and Reel

Dimensions are shown in millimeters (inches)

330.00

(12.992)

MAX.

14.40 ( .566 )

12.40 ( .488 )

NOTES :

1. CONTROLLING DIMENSION : MILLIMETER.

2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

FEED DIRECTION

TERMINAL NUMBER 1

12.3 ( .484 )

11.7 ( .461 )

8.1 ( .318 )

7.9 ( .312 )

NOTES:

1. CONTROLLING DIMENSION : MILLIMETER.

2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).

3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

AUIRF7207Q

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Qualification Information 

Qualification Level

Automotive

(per AEC-Q101)

Comments: This part number(s) passed Automotive qualification. Infineon’s

Industrial and Consumer qualification level is granted by extension of the

higher Automotive level.

Moisture Sensitivity Level SO-8 MSL1

ESD

Machine Model

Class M1B (+/- 100V)†

AEC-Q101-002

Human Body Model

Class H1A (+/- 500V)†

AEC-Q101-001

Charged Device Model

Class C5 (+/- 2000V)†

AEC-Q101-005

RoHS Compliant Yes

† Highest passing voltage.

Published by

Infineon Technologies AG

81726 München, Germany

IMPORTANT NOTICE

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics

(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any

information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and

liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third

party.

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this

document and any applicable legal requirements, norms and standards concerning customer’s products and any use of

the product of Infineon Technologies in customer’s applications.

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of

customer’s technical departments to evaluate the suitability of the product for the intended application and the

completeness of the product information given in this document with respect to such application.

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest

Infineon Technologies office (www.infineon.com).

WARNINGS

Due to technical requirements products may contain dangerous substances. For information on the types in question

please contact your nearest Infineon Technologies office.

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized

representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a

failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.

Revision History

Date Comments

4/3/2014  Added "Logic Level Gate Drive" bullet in the features section on page 1

11/16/2015  Updated datasheet with corporate template

 Corrected ordering table on page 1.