Data Sheet, Doc. No. 5SYA 1421-01 04-2012 5SLA 2000J170300 ABB HiPakTM Diode Module VRRM = 1700 V IF = 2000 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance High voltage package suitable for multilevel application Maximum rated values 1) Parameter Repetitive peak reverse voltage DC forward current Symbol VRRM IF Conditions Tvj min 25 C max Unit 1700 V TC = 85 C, Tvj = 150 C 2000 A Peak forward current IFRM tp = 1 ms 4000 A Total power dissipation Ptot TC = 25 C, Tvj = 150 C 6900 W Surge current IFSM VR = 0 V, Tvj = 150 C, tp = 10 ms, half-sinewave 12000 A Isolation voltage Visol 1 min, f = 50 Hz 10200 V Junction temperature Tvj 150 C Junction operating temperature Tvj(op) -50 150 C Case temperature TC -50 125 C Storage temperature Tstg C Mounting torques 2) 1) 2) -50 125 Ms Base-heatsink, M6 screws 4 6 Mt1 Main terminals, M8 screws 8 10 Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 for detailed mounting instructions refer to ABB Document No. 5SYA2039 Nm Diode characteristic values 2) Parameter Symbol Conditions min typ max Unit 1.75 2.1 V Tvj =125 C 1.8 2.15 Tvj =150 C 1.75 Tvj =25 C Forward voltage 3) VF IF = 2000 A Tvj =25 C Continuous reverse current IR Reverse recovery current Qrr Reverse recovery time trr Reverse recovery energy 3) Tvj =125 C Irr Recovered charge 2) VR = 1700 A VCC = 900 V, IF = 2000 A, VGE = 15 V, di/dt = 6.3 kA/s L = 100 nH, inductive load switch: 5SNA 2000J170300 Erec 15 V V 1 V 30 V Tvj =150 C 50 V Tvj =25 C 1320 A Tvj =125 C 1510 A Tvj =150 C 1600 A Tvj =25 C 630 C Tvj =125 C 950 C Tvj =150 C 1090 C Tvj =25 C 740 ns Tvj =125 C 1030 ns Tvj =150 C 1050 ns Tvj =25 C 500 mJ Tvj =125 C 730 mJ Tvj =150 C 830 mJ Characteristic values according to IEC 60747 - 2 Forward voltage is given at chip level Package properties 4) Parameter Symbol Diode thermal resistance junction to case Diode thermal resistance case to heatsink min typ Rth(j-c)DIODE max Unit 0.018 K/W 2) Rth(c-s)DIODE Comparative tracking index CTI Module stray inductance L Resistance, terminal-chip 2) Conditions Diode per switch, 0.024 grease = 1W/m x K K/W > 600 27 AC RCC'+EE' TC =25 C 0.1 TC =125 C 0.15 TC =150 C 0.16 nH m for detailed mounting instructions refer to ABB Document No. 5SYA2039 Mechanical properties 4) Parameter Symbol Conditions Dimensions LxWxH Typical Clearance distance in air da according to IEC 60664-1 and EN 50124-1 Surface creepage distance ds according to IEC 60664-1 and EN 50124-1 Mass m 4) Package and mechanical properties according to IEC 60747 - 15 2 5SLA 2000J170300 | Doc. No. 5SYA 1421-01 04-2012 min typ 130 x 140 x 48 Term. to base: 40 Term. to term: 26 Term. to base: 64 Term. to term: 56 max Unit mm mm mm 1090 g Electrical configuration Outline drawing 2) Note: all dimensions are shown in millimeters 2) For detailed mounting instructions refer to ABB Document No. 5SYA2039 This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX. This product has been designed and qualified for Industrial Level. 3 5SLA 2000J170300 | Doc. No. 5SYA 1421-01 04-2012 2000 1000 2000 3000 RG = 0.68 ohm Tvj = 125 C Tvj = 150 C 0 0 0 RG = 0.83 ohm RG = 3.3 ohm RG = 4.7 ohm Erec RG = 1.0 ohm VCC = 900 V VGE = 15 V RG = 1.0 ohm L = 100 nH Tvj = 125 C Tvj = 150 C 0 4000 1 2 3 4 5 6 7 8 di/dt [kA/s] IF [A] Fig. 1 Qrr 500 500 Irr RG = 1.2 ohm Erec 1000 RG = 6.8 ohm 1000 RG = 10 ohm Erec [mJ], Irr [A], Qrr [C] Erec [mJ], Irr [A], Qrr [C] Qrr RG = 15 ohm 1500 1500 RG = 1.8 ohm Irr RG = 2.2 ohm VCC = 900 V IF = 2000 A Tvj = 125 (150) C L = 100 nH RG = 1.5 ohm 2000 Typical reverse recovery characteristics vs forward current Fig. 2 Typical reverse recovery characteristics vs di/dt 5000 4000 VCC 1200 V di/dt 9.3 kA/s Tvj = 150 C L = 100 nH 25 C 4000 3000 3000 2000 IR [A] IF [A] 125 C 150 C 2000 1000 1000 0 0 0.0 0.5 1.0 1.5 2.0 2.5 0 3.0 Typicial diode forward characteristics chip level 4 5SLA 2000J170300 | Doc. No. 5SYA 1421-01 04-2012 1000 VR [V] VF [V] Fig. 3 500 Fig. 4 Safe operating area diode (SOA) 1500 2000 0.1 Analytical function for transient thermal impedance: R i (1 - e -t/ i ) Z th (j-c) (t) = Z th(j-c) Diode 0.01 i 1 DIODE Ri(K/kW) 12.6 2.89 1.30 1.26 i(ms) 210 29.6 7.01 1.49 0.001 5SLA 2000J170300 | Doc. No. 5SYA 1421-01 04-2012 Zth(j-c) [K/W] IGBT, DIODE n 0.0001 0.001 Fig. 5 0.01 0.1 t [s] 1 10 Thermal impedance vs time Related documents: 5SYA 2042 Failure rates of HiPak modules due to cosmic rays 5SYA 2043 Load - cycle capability of HiPaks 5SYA 2045 Thermal runaway during blocking 5SYA 2058 Surge currents for IGBT diodes 5SZK 9120 Specification of environmental class for HiPak ABB Switzerland Ltd. Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg Switzerland Phone: +41 58 586 1419 Fax: +41 58 586 1306 E-Mail: abbsem@ch.abb.com Internet: www.abb.com/semiconductors We reserve the right to make technical changes or to modify the contents of this document without prior notice. 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