R1121N SERIES
LOW NOISE 150mA LDO REGULATOR
NO.EA-058-100202
1
OUTLINE
The R1121N Series are CMOS-based voltage regulator ICs with high output voltage accuracy, extremely low
supply current, low ON-resistance, and high Ripple Rejection. Each of these voltage regulator ICs consists of a
voltage refere nce unit, an error amplifier, resistors, a current limit circuit, and a chip enable circuit.
These ICs perform with low dropout voltage and a chip enable function. The line transient response and load
transient response of the R1121N Series are excellent, thus these ICs are very suitable for the power supply for
hand-held communi cation equipment.
The output voltage of these ICs is fixed with high accuracy.
Since the package for these ICs is SOT-23-5 (Mini-mold) package , high density mounting of the ICs on
boards is possible.
FEATURES
• Supply Current................................................................Typ. 35 μA
• Standby Mode.................................................................Typ. 0.1μA
• Dropout Voltage ..............................................................Typ. 0.2V (IOUT=100mA)
• Ripple Rejection..............................................................Typ. 70dB(f=1kHz)
• Temperature-Drift Coefficient of Output Voltage.............Typ. ±100ppm/°C
• Line Regulation...............................................................Typ. 0.05%/V
• Output Voltage Accuracy.................................................±2.0%
• Output Voltage Range.....................................................1.5V to 5.0V (0.1V steps)
(For other voltages, please refer to MARK INFORMATIONS.)
• Package ........................................................................SOT-23-5 (Mini-mold)
• Built-in chip enable circuit ( 2 types; A: active “L”, B: active “H”)
• Pin-out.............................................................................Similar to the TK112,TK111
APPLICATIONS
• Power source for cellular phones such as GSM, CDMA and various kinds of PCSs.
• Power source for domestic appliances such as camera s, VCRs and camcorders.
• Power source for battery-powered equipment.
R1121N
2
BLOCK DIAGRAM
R1121Nxx1A R1121Nxx1B
Vref
Current Limit
V
DD
31
24
V
OUT
GNDCE
Vref
Current Limit
V
DD
31
24
V
OUT
GNDCE
SELECTION GUIDE
The output voltage, the active type for the ICs can be selected at the user's request.
Product Name Package Quantity per Reel Pb Free Halogen Free
R1121Nxx1∗-TR-FE SOT-23-5 3,000 pcs Yes Yes
xx : The output voltage can be designated in the range from 1.5V(15) to 5.0V(50) in 0.1V steps.
(For other voltages, please refer to MARK INFORMA TIONS.)
∗ : Designation of Active Type.
(A) "L" active
(B) "H" active
R1121N
3
PIN CONFIGURATION
SOT-23-5
1
4
5
23
(mark side)
PIN DESCRIPTION
Pin No Symbol Description
1 VOUT Output pin
2 GND Ground Pin
3 VDD Input Pin
4 CE or CE Chip Enable Pin
5 NC No Connection
ABSOLUTE MAXIMUM RATINGS
Symbol Item Rating Unit
VIN Input Voltage 9.0 V
VCE Input Voltage(CE or CE Pin) -0.3 ~ VIN+0.3 V
VOUT Output Voltage -0.3 ~ VIN+0.3 V
IOUT Output Current 200 mA
PD Power Dissi pation (SOT-23-5) ∗ 420 mW
Topt Operating Temperature Range -40 ~ 85 °C
Tstg Storage Temperature Range -55 ~ 125 °C
∗) For Power Dissipation, please refer to PACKAGE INFORMATION.
ABSOLUTE MAXIMUM RATINGS
Electronic and mechanical stress momentarily exceeded absolute maximum ratings may cause the
permanent damages and may degrade the life time and safety for both device and system u sing the device
in the field.
The functional operation at or over these absolute maximum ratings is not assured.
R1121N
4
ELECTRICAL CHARACTERISTICS
• R1121Nxx1A Topt=25°C
Symbol Item Conditions Min. Typ. Max. Unit
VOUT Output Voltage VIN = Set VOUT + 1V
1mA
<
=
IOUT
<
=
30mA VOUT
×0.98 VOUT
×1.02 V
IOUT Output Current Refer to the ELECTRICAL CHARACTERISTICS by OUTPUT VOLTAGE
ΔVOUT/ΔIOUT Load Regulation VIN = Set VOUT + 1V
1mA
<
=
IOUT
<
=
80mA 12 40 mV
VDIF Dropout Voltage Refer to the ELECTRICAL CHARACTERISTICS by OUTPUT VOLTAGE
ISS Supply Current VIN = Set VOUT + 1V 35 70 μA
Istandby Supply Current (Standby) VIN = VCE = Set VOUT + 1V 0.1 1.0 μA
ΔVOUT/ΔVIN Line Regulation Set VOUT+0.5V
<
=
VIN
<
=
8.0V
IOUT = 30mA 0.05 0.20 %/V
RR Ripple Rejection f = 1kHz, Ripple 0.5Vp-p
VIN = Set VOUT + 1V 70 dB
VIN Input Voltage 2.0 8.0 V
ΔVOUT/
ΔTopt Output Voltage
Temperature Coefficient IOUT = 30mA
−40°C
<
=
Topt
<
=
85°C ±100 ppm/°C
ISC Short Current Limit VOUT = 0V 50 mA
RPU
CE
Pull-up Resistance 2.5 5.0 10.0 MΩ
VCEH
CE
Input Voltage “H” 1.5 VIN V
VCEL
CE
Input Voltage “L” 0.00 0.25 V
en Output Noise BW=10Hz to 100kHz 30 μVrms
RECOMMENDED OPERATING CONDITIONS (ELECTRICAL CHARACTERISTICS)
All of electronic equipment sho uld b e designed that the mounted semiconductor devices o perate within the
recommended operating conditions. The semiconductor devices cannot operate normally over the
recommended operating conditions, even if when they are used over such conditions by momentary
electronic noise or su rge. And the semicondu ctor devices may receive seriou s damage when they continu e
to operate over the recommended operating conditions.
R1121N
5
• R1121Nxx1B Topt=25°C
Symbol Item Conditions Min. Typ. Max. Unit
VOUT Output Voltage VIN = Set VOUT + 1V
1mA
<
=
IOUT
<
=
30mA VOUT
×0.98 VOUT
×1.02 V
IOUT Output Current Refer to the ELECTRICAL CHARACTERISTICS by OUTPUT VOLTAGE
ΔVOUT/ΔIOUT Load Regulation VIN = Set VOUT + 1V
1mA
<
=
IOUT
<
=
80mA 12 40 mV
VDIF Dropout Voltage Refer to the ELECTRICAL CHARACTERISTICS by OUTPUT VOLTAGE
ISS Supply Current VIN = Set VOUT + 1V 35 70
μA
Istandby Supply Current (Standby)
VIN = Set VOUT + 1V
VCE =GND 0.1 1.0
μA
ΔVOUT/ΔVIN Line Regulation Set VOUT + 0.5V
<
=
VIN
<
=
8.0V
IOUT = 30mA 0.05 0.20 %/V
RR Ripple Rejection f = 1kHz, Ripple 0.5Vp-p
VIN = Set VOUT + 1V 70 dB
VIN Input Voltage 2.0 8.0 V
ΔVOUT/
ΔTopt Output Voltage
Temperature Coefficient IOUT = 30mA
−40°C
<
=
Topt
<
=
85°C ±100 ppm/°C
ISC Short Current Limit VOUT = 0V 50 mA
RPD CE Pull-down Resistance 2.5 5.0 10.0
MΩ
VCEH CE Input Voltage “H” 1.5 VIN V
VCEL CE Input Voltage “L” 0.00 0.25 V
en Output Noise BW=10Hz to 100kHz 30
μVrms
RECOMMENDED OPERATING CONDITIONS (ELECTRICAL CHARACTERISTICS)
All of electronic equipment sho uld b e designed that the mounted semiconductor devices o perate within the
recommended operating conditions. The semiconductor devices cannot operate normally over the
recommended operating conditions, even if when they are used over such conditions by momentary
electronic noise or su rge. And the semicondu ctor devices may receive seriou s damage when they continu e
to operate over the recommended operating conditions.
R1121N
6
ELECTRICAL CHARACTERISTICS by OUTPUT VOLTAGE
Topt = 25°C
Output Current
IOUT (mA)
Output Voltage
V
OUT (V)
Condition Min.
1.5
<
=
VOUT
<
=
1.7 100
1.8
<
=
VOUT
<
=
5.0 VIN - VOUT = 1.0V 150
Topt = 25°C
Dropout Voltage
VDIF (V)
Output Voltage
V
OUT (V) Condition Min. Typ. Max.
1.5 0.50
1.6 0.40
1.7 0.30
1.8
<
=
VOUT
<
=
1.9 0.60 1.40
2.0
<
=
VOUT
<
=
2.4 0.35 0.70
2.5
<
=
VOUT
<
=
2.7 0.24 0.35
2.8
<
=
VOUT
<
=
3.3 0.20 0.30
3.4
<
=
VOUT
<
=
5.0
IOUT = 100mA
0.17 0.26
Note : When set Output Voltage is equal or less than 2.0V,
VIN should be equal or more than 2.0V.
OPERATION
R1121Nxx1A R1121Nxx1B
V
DD
31
24
V
OUT
GND
R2
R1
CE Current Limit
Vref
V
DD
31
24
V
OUT
GND
R2
R1
CE Current Limit
Vref
In these ICs, fluctuation of output voltage, VOUT is detected by feed-back registers R1, R2, and the result is
compared with a reference voltage by the error amplifier, so that a constant volt age is output.
A current limit circuit for protection in short mode and a chip enable circuit, are included.
R1121N
7
TEST CIRCUITS
R1121Nxx1B Series
V
DD
1
3
2
4
V
OUT
I
OUT
IN OUT
GND
CE
0.1μF
2.2μF
Standard test Circuit
R1121Nxx1B Series
VDD
1
3
2
4
VOUT
ISS
IN OUT
GND
CE
0.1μF
2.2μF
Supply current Test
Circuit
Fig.1 Standard test Circu i t Fig.2 Supply Current Test Circuit
R1121Nxx1B Series
V
DD
1
3
P. G 2
4
V
OUT
I
OUT
IN OUT
GND
CE
Ripple Rejection, Line
Transient Response
Test Circuit
R1121Nxx1B Series
VDD
1
3
2
4
VOUT
IN OUT
GND I1 I2
CE
1μF
Load Transient Response
Test Circuit
Fig.3 Ripple Rejection, Line Transient Fig.4 Load Transient Response Test Circuit
Response Test Circuit
R1121N
8
TYPICAL CHARACTERISTICS
1) Output Voltage vs. Output Current
R1121N181B R1121N301B
2.0
1.8
1.6
1.0
0.8
0.6
0.4
0.2
1.4
1.2
0.0
Output Current I
OUT
(mA)
0 200 300 400 500100
Output Voltage V
OUT
(V)
3.8V 2.8V
2.3V
V
IN
= 2.1V
Topt = 25°C
3.5
2.5
1.5
1.0
0.5
2.0
3.0
0.0
Output Current I
OUT
(mA)
0 200 300 400 500100
Output Voltage V
OUT
(V)
5.0V
4.0V
3.5V
V
IN
= 3.3V
Topt = 25°C
R1121N401B R1121N501B
5.0
4.5
4.0
2.5
2.0
1.5
1.0
0.5
3.5
3.0
0.0
Output Current I
OUT
(mA)
0 200 300 400 500100
Output Voltage V
OUT
(V)
6.0V
5.0V
4.5V
V
IN
= 4.3V
Topt = 25°C
6.0
5.0
3.0
2.0
1.0
4.0
0.0
Output Current I
OUT
(mA)
0 200 300 400 500100
Output Voltage (V)
7.0V
6.0V
5.5V
V
IN
= 5.3V
Topt = 25°C
2) Output Voltage vs. Input Voltage
R1121N181B R1121N301B
2.0
1.9
1.8
1.7
1.6
1.5
1.4
1.2
1.3
Input Voltage V
IN
(V)
1.0 4.0 5.0 6.0 7.0 8.02.0 3.0
Output Voltage V
OUT
(V)
I
OUT
= 1mA
30mA
50mA
Topt = 25°C
3.1
3.0
2.9
2.8
2.7
2.5
2.6
Input Voltage VIN (V)
2.0 4.0 5.0 6.0 7.0 8.03.0
Output Voltage VOUT (V)
Topt = 25°C
30mA
50mA
IOUT=1mA
R1121N
9
R1121N401B R1121N501B
4.5
4.0
3.5
3.0
2.5
Intput Voltage V
IN
(V)
2.0 4.0 5.0 6.0 8.07.03.0
Output Voltage V
OUT
(V)
I
OUT
= 1mA
30mA
50mA
Topt = 25°C
5.5
5.0
4.0
3.5
3.0
4.5
2.5
Intput Voltage V
IN
(V)
2.0 4.0 5.0 6.0 8.07.03.0
Output Voltage V
OUT
(V)
I
OUT
= 1mA
30mA
50mA
Topt = 25°C
3) Dropout Voltage vs. Output Current
R1121N181B R1121N301B
1.20
1.00
0.80
0.60
0.40
0.20
0.00
Output Current I
OUT
(mA)
0 50 100 150
Dropout Voltage V
DIF
(V)
Topt = 85°C
25°C
-40°C
0.40
0.35
0.30
0.20
0.15
0.10
0.05
0.25
0.00
Output Current I
OUT
(mA)
0 50 100 150
Dropout Voltage V
DIF
(V)
Topt = 85°C
25°C
-40°C
R1121N401B R1121N501B
0.40
0.35
0.30
0.25
0.20
0.15
0.00
0.05
0.10
Output Current I
OUT
(mA)
0 50 100 150
Dropout Voltage V
DIF
(V)
Topt = 85°C
25°C
-40°C
0.40
0.35
0.30
0.25
0.20
0.15
0.00
0.05
0.10
Output Current I
OUT
(mA)
0 50 100 150
Dropout Voltage V
DIF
(V)
Topt = 85°C
25°C
-40°C
R1121N
10
4) Output Voltage vs. Temperature
R1121N181B R1121N301B
1.90
1.88
1.86
1.80
1.78
1.76
1.74
1.72
1.84
1.82
1.70
Temperature Topt (°C)
-50 0 25 50 10075-25
Output Voltage V
OUT
(V)
V
IN
= 2.8V
I
OUT
= 30mA
3.10
3.08
3.06
3.00
2.98
2.96
2.94
2.92
3.04
3.02
2.90
Temperature Topt (°C)
-50 0 25 50 10
0
75-25
Output Voltage VOUT (V)
IOUT = 30mA
VIN = 4.0V
R1121N401B R1121N501B
4.10
4.08
4.06
4.00
3.98
3.96
3.94
3.92
4.04
4.02
3.90
Temperature Topt (°C)
-50 0 25 50 10
0
75-25
Output Voltage V
OUT
(V)
I
OUT
= 30mA
V
IN
= 5.0V
5.10
5.08
5.06
5.00
4.98
4.96
4.94
4.92
5.04
5.02
4.90
Temperature Topt (°C)
-50 0 25 50 10
0
75-25
Output Voltage V
OUT
(V)
I
OUT
= 30mA
V
IN
= 6.0V
5) Supply Current vs. Input Voltage
R1121N181B R1121N301B
60
50
40
30
20
0
10
Input Voltage V
IN
(V)
1.0 2.0 4.0 5.0 6.0 7.0 8.
0
3.0
Supply Current I I
SS
(μA)
Topt = 25°C
60
50
40
30
20
0
10
Input Voltage VIN (V)
1.0 2.0 4.0 5.0 6.0 7.0 8.03.0
Supply Current I ISS (μA)
Topt = 25°C
R1121N
11
R1121N401B R1121N501B
60
50
40
30
20
10
0
Intput Voltage V
IN
(V)
1.0 4.0 5.0 6.0 7.0 8.
0
2.0 3.0
Supply Current I
SS
(μA)
Topt = 25°C
60
50
40
30
20
10
0
Intput Voltage VIN (V)
1.0 4.0 5.0 6.0 7.0 8.02.0 3.0
Supply Current ISS (μA)
Topt = 25°C
6) Supply Current vs. Temperature
R1121N181B R1121N301B
50
45
40
35
30
20
25
Temperature Topt (°C)
-50 50 1000
Supply Current I
SS
(μA)
V
IN
= 2.8V
50
45
40
35
30
20
25
Temperature Topt (°C)
-50 50 1000
Supply Current I
SS
(μA)
V
IN
= 2.8V
R1121N401B R1121N501B
50
45
40
35
30
20
25
Temperature Topt (°C)
-50 50 1000
Supply Current ISS (μA)
VIN = 5.0V
50
45
40
35
30
20
25
Temperature Topt (°C)
-50 50 1000
Supply Current ISS (μA)
VIN = 6.0V
R1121N
12
7) Dropout Voltage vs. Set Output Voltage
R1121Nxx1B
0.8
0.9
1.0
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.01.0 2.0 3.0 4.0 5.0
IOUT = 150mA
IOUT = 100mA
IOUT = 50mA
IOUT = 30mA
IOUT = 10mA
Set Output V oltage Vreg (V)
Dropout V oltage VDIF (V)
Topt = 25
8) Ripple Rejection vs. Frequency
R1121N181B R1121N181B
80
70
60
50
40
30
20
10
0
0.1 1 10 100
I
OUT
= 1mA
I
OUT
= 30mA
I
OUT
= 50mA
Frequency f (kHz)
Ripple Rejection RR (dB)
V
IN
= 2.8V
DC
+ 0.5Vp-p
C
OUT
= tantal 1.0μF
80
70
60
50
40
30
20
10
0
0.1 1 10 100
I
OUT
= 1mA
I
OUT
= 30mA
I
OUT
= 50mA
Frequency f (kHz)
Ripple Rejection RR (dB)
V
IN
= 2.8V
DC
+ 0.5Vp-p
C
OUT
= tantal 2.2μF
R1121N301B R1121N301B
80
70
60
50
40
30
20
10
0
0.1 1 10 100
I
OUT
= 1mA
I
OUT
= 30mA
I
OUT
= 50mA
Frequency f (kHz)
Ripple Rejection RR (dB)
V
IN
= 4.0V
DC
+ 0.5Vp-p
C
OUT
= tantal 1.0μF
80
70
60
50
40
30
20
10
0
0.1 1 10 100
I
OUT
= 1mA
I
OUT
= 30mA
I
OUT
= 50mA
Frequency f (kHz)
Ripple Rejection RR (dB)
V
IN
= 4.0V
DC
+ 0.5Vp-p
C
OUT
= tantal 2.2μF
R1121N
13
R1121N401B R1121N401B
80
70
60
50
40
30
20
10
0
0.1 1 10 100
I
OUT
= 1mA
I
OUT
= 30mA
I
OUT
= 50mA
Frequency f (kHz)
Ripple Rejection RR (dB)
V
IN
= 5.0V
DC
+ 0.5Vp-p
C
OUT
= tantal 1.0μF
80
70
60
50
40
30
20
10
00.1 1 10 100
I
OUT
= 1mA
I
OUT
= 30mA
I
OUT
= 50mA
Frequency f (kHz)
Ripple Rejection RR (dB)
V
IN
= 5.0V
DC
+ 0.5Vp-p
C
OUT
= tantal 2.2μF
9) Ripple Rejection vs. Input Voltage (DC bias)
R1121N301B R1121N301B
80
70
60
50
40
30
20
10
0
3.1 3.2 3.3 3.4 3.5
f = 400Hz
f = 1kHz
f = 10kHz
Input Voltage V
IN
(V)
Ripple Rejection RR (dB)
I
OUT
= 1mA
C
OUT
= 2.2μF
80
70
60
50
40
30
20
10
0
3.1 3.2 3.3 3.4 3.5
f = 400Hz
f = 1kHz
f = 10kHz
Input Voltage V
IN
(V)
Ripple Rejection RR (dB)
I
OUT
= 10mA
C
OUT
= 2.2μF
R1121N301B
80
70
60
50
40
30
20
10
0
3.1 3.2 3.3 3.4 3.5
f = 400Hz
f = 1kHz
f = 10kHz
Input Voltage V
IN
(V)
Ripple Rejection RR (dB)
I
OUT
= 50mA
C
OUT
= 2.2μF
R1121N
14
10) LineTransient Response R1121N301B
I
OUT
=30mA
tr=tf=5 μs
C
OUT
=Tantalum 1.0μF
2.8
2.9
3.0
3.1
3.2
3.3
3.4
TIme t (μs)
OUtput Voltage V
OUT
(V)
Input Voltage V
IN
(V)
0 20 40 60 80 100 120
0
1
6
5
4
3
2
Input Voltage
Output Voltage
R1121N301B
I
OUT
=30mA
tr=tf=5 μs
C
OUT
=Tantalum 2.2μF
2.8
2.9
3.0
3.1
3.2
3.3
3.4
Time t (μs)
Output Voltage V
OUT
(V)
Input Voltage V
IN
(V)
0 20 40 60 80 100 120
0
1
6
5
4
3
2
Input Voltage
Output Voltage
R1121N301B
I
OUT
=30mA
tr=tf=5 μs
C
OUT
=Tantalum 6.8μF
2.8
2.9
3.0
3.1
3.2
3.3
3.4
Time t (μs)
Output Voltage V
OUT
(V)
Input Voltage V
IN
(V)
0 20 40 60 80 100 120
0
1
6
5
4
3
2
Input Voltage
Output Voltage
R1121N
15
11) Load Transient Response
R1121N301B
V
IN
=4V
C
IN
=Tantalum 1μF
C
OUT
=Tantalum 1.0μF
2.8
2.9
3.0
3.1
3.2
3.3
3.4
Time t (μs)
Output Voltage V
OUT
(V)
Output Current I
OUT
(mA)
02468
10 12 14 16 18 20
-150
-100
150
100
50
0
-50
Output Current
Output Voltage
R1121N301B
V
IN
=4V
C
IN
=Tantalum 1μF
C
OUT
=Tantalum 2.2μF
2.8
2.9
3.0
3.1
3.2
3.3
3.4
Time t (μs)
Output Voltage V
OUT
(V)
Output Current I
OUT
(mA)
02468
10 12 14 16 18 20
-150
-100
150
100
50
0
-50
Output Current
Output Voltage
R1121N301B
V
IN
=4V
C
IN
=Tantalum 1μF
C
OUT
=Tantalum 6.8μF
2.8
2.9
3.0
3.1
3.2
3.3
3.4
Time t (μs)
Output Voltage V
OUT
(V)
Output Current I
OUT
(mA)
02468
10 12 14 16 18 20
-150
-100
150
100
50
0
-50
Output Current
Output Voltage
R1121N
16
TECHNICAL NOTES
When using these ICs, be sure to consi der the following points:
In these ICs, phase compensation is made for securing stable operation even if the load current is varied. For
this purpose, be sure to use a capacitor COUT with good frequency characteristics and ESR (Equivalent Series
Resist ance) in the range described as follows:
Vout
Iout
Vin
Vin
CE
GND ESR
Ceramic
Capacitor
Ceramic Capacitor
1μF
R1121N301B Spectrum
Analyzer
S.A.
4
3
2
1
Measuring Circuit for white noise; R1121N301B
The relationship between IOUT (output current) and ESR of output capacitor is shown in the graphs below. The
conditions when the white noise level is under 40mV (Avg.) are indicated by the hatched area in the graph.
(note: When the additional ceramic capacitors are connected to the output pin with output capacitor for phase
compensation, the operation might be unstable. Because of this, test these ICs with as the same external
component s as the ones to be used on the PCB.)
<Measurement conditions>
(1) VIN=4V
(2) Frequency Band: 10Hz to 1MHz
(3) Temperature: 25°C
R1121N301B R1121N301B
100.0
10.0
1.0
0.1
Output Current I
OUT
(mA)
0 10050 150
ESR (Ω)
Ceramic 1.0μF
100.0
10.0
1.0
0.1
Output Current I
OUT
(mA)
0 10050 150
ESR (Ω)
Ceramic 2.2μF
R1121N
17
·Make VDD and GND lines sufficient. If their impedance is high, noise pick up or incorrect operation may result.
·Connect the capacitor with a capacitance of 1μF or more between VDD and GND as close as possible.
·Set external components, especially the output capa citor, as close as possible to the ICs and make wiring as
short as possible.
TYPICAL APPLICATION
R1121Nxx1A V
OUT
OUTIN V
DD
GND
CE
Cap.
Cap.
R1121Nxx1B V
OUT
OUTIN V
DD
GND
CE
Cap.
Cap.
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Theproductslistedinthisdocumentareintendedanddesignedforuseasgeneralelectronic
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customersintendingtouse
aproductinanapplicationrequiringextremequalityandreliability,
forexample,inahighlyspecificapplicationwherethefailureormisoperationoftheproduct
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toincorporatesafetymeasuresintheirdesign,suchasredundancyfeature,firecontainment
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RICOHCOMPANY.,LTD.ElectronicDevicesCompany
■
Ricoh presented with the Japan Management Quality Award for 1999
.
Ricoh continually strives to promote customer satisfaction, and shares the achievements
of its management quality improvement program with people and society.
■Ricoh awarded ISO 14001 certification.
The Ricoh Group was awarded ISO 14001 certification, which is an international standard for
environmental management systems, at both its domestic and overseas production facilities.
Our current aim is to obtain ISO 14001 certification for all of our business offices.
Ricoh completed the organization of the Lead-free production for all of our products.
After Apr. 1, 2006, we will ship out the lead free products only. Thus, all products that
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