Ordering number : ENN7129 MCH3109 / MCH3209 PNP / NPN Silicon Epitaxial Planar Transistors MCH3109 / MCH3209 DC / DC Converter Applications Preliminary Applications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit : mm 2194A Features * * * 0.25 0.15 1.6 * 0.3 3 2 0.25 * [MCH3109 / MCH3209] Adoption of MBIT processes. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall package facilitates miniaturization in end products (0.85mm). High allowable power dissipation. 2.1 * 1 0.65 0.07 * 2.0 3 1 : Base (Bottom view) 0.85 2 : Emitter 3 : Collector Specifications ( ) : MCH3109 1 Absolute Maximum Ratings at Ta=25C Parameter Symbol 2 SANYO : MCPH3 (Top view) Conditions Ratings Unit Collector-to-Base Voltage VCBO (--30)40 Collector-to-Emitter Voltage VCEO (--)30 V Emitter-to-Base Voltage VEBO (--)5 V (--)3 A Base Current IC ICP IB Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Collector Current Collector Current (Pulse) (--)5 (--)600 Mounted on a ceramic board(600mm20.8mm) V A mA 0.8 W 150 C --55 to +150 C Electrical Characteristics at Ta=25C Parameter Symbol Collector Cutoff Current ICBO IEBO Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product hFE fT Output Capacitance Cob Conditions VCB=(--)30V, IE=0 VEB=(--)4V, IC=0 VCE=(--)2V, IC=(--)500mA VCE=(--)10V, IC=(--)500mA VCB=(--)10V, f=1MHz Ratings min typ max 200 Unit (--)0.1 A (--)0.1 A 560 (380)450 MHz (25)20 Marking : MCH3109 : AJ / MCH3209 : CJ pF Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N3001 TS IM TA-3372, 3373 No.7129-1/5 MCH3109 / MCH3209 Continued from preceding page. Parameter Symbol Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage VCE(sat)1 IC=(--)1.5A, IB=(--)30mA VCE(sat)2 IC=(--)1.5A, IB=(--)750mA IC=(--)1.5A, IB=(--)30mA Collector-to-Emitter Breakdown Voltage VBE(sat) V(BR)CBO V(BR)CEO Emitter-to-Base Breakdown Voltage V(BR)EBO Collector-to-Base Breakdown Voltage Turn-ON Time Fall Time min IC=(--)10A, IE=0 IC=(--)1mA, RBE= tf typ Unit max (--155) (--230) 120 180 mV mV (--)105 (--)155 mV (--)0.83 (--)1.2 V (--30)40 V (--)30 V IE=(--)10A, IC=0 See specified Test Circuit. ton tstg Storage Time Ratings Conditions (--)5 V (50)30 ns See specified Test Circuit. (270)300 ns See specified Test Circuit. (25)15 ns Switching Time Test Circuit IB1 PW=20s D.C.1% OUTPUT IB2 INPUT RB VR RL 50 + 470F + 100F VBE= --5V VCC=12V IC=20IB1= --20IB2=500mA (For PNP, the polarity is reversed.) --8mA A --1.6 --1.2 --6mA --4mA --0.8 --2mA --0.4 1.6 A mA 10 A 8m 6mA 4mA 1.2 0.8 2mA 0.4 IB=0 0 --200 --400 --600 --800 Collector-to-Emitter Voltage, VCE -- mV --1000 0 Ta=75C 25C --25C --2.0 --1.5 --1.0 --0.5 600 800 1000 IT03994 IC -- VBE MCH3209 VCE=2V 3.0 Collector Current, IC -- A --2.5 400 3.5 MCH3109 VCE= --2V --3.0 200 Collector-to-Emitter Voltage, VCE -- mV IT03993 IC -- VBE --3.5 MCH3209 IB=0 0 2.5 2.0 Ta=75C 25C --25C 0 Collector Current, IC -- A 40mA 50mA 30mA --3 0 --10m Collector Current, IC -- A mA A --40m A 0 --2 --50m Collector Current, IC -- A mA IC -- VCE 2.0 MCH3109 20m IC -- VCE --2.0 1.5 1.0 0.5 0 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 Base-to-Emitter Voltage, VBE -- V --1.2 IT03995 0 0.2 0.4 0.6 0.8 1.0 Base-to-Emitter Voltage, VBE -- V 1.2 IT03996 No.7129-2/5 MCH3109 / MCH3209 hFE -- IC 1000 MCH3109 VCE= --2V 7 --25C 2 25C 100 7 5 5 7 --0.1 2 3 5 7 --1.0 2 3 7 5 MCH3109 VCE= --10V 5 3 2 100 7 5 3 2 10 --10 2 3 5 7 --100 2 3 5 7 --1000 2 Collector Current, IC -- mA 2 3 5 7 --10 2 3 Collector-to-Base Voltage, VCB -- V 3 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A 100 7 5 3 2 2 3 2 3 5 5 7 --10 IT04003 7 100 2 3 5 7 1000 2 3 IT04000 Cob -- VCB MCH3209 f=1MHz 3 2 10 1.0 2 3 5 7 10 2 3 Collector-to-Base Voltage, VCB -- V 5 IT04002 VCE(sat) -- IC 1.0 7 5 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V --0.01 7 5 2 2 IT04001 C 75 Ta= C 5C 2 --25 3 2 3 5 MCH3109 IC / IB=20 --0.1 7 5 5 7 10 IT03998 7 5 3 2 3 100 VCE(sat) -- IC --1.0 7 5 2 Collector Current, IC -- mA Output Capacitance, Cob -- pF 3 5 7 1.0 5 2 5 3 MCH3209 VCE=10V IT03999 7 2 f T -- IC 10 0.01 3 100 2 5 7 0.1 7 MCH3109 f=1MHz 10 --1.0 3 Collector Current, IC -- A Cob -- VCB 2 2 1000 7 --0.001 --0.01 10 0.01 5 7 --10 IT03997 f T -- IC 1000 Gain-Bandwidth Product, f T -- MHz 100 2 3 --25C 25C 3 Collector Current, IC -- A Output Capacitance, Cob -- pF 2 2 2 Ta=75C 3 3 10 --0.01 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 5 Gain-Bandwidth Product, f T -- MHz DC Current Gain, hFE 3 Ta=75C MCH3209 VCE=2V 7 DC Current Gain, hFE 5 hFE -- IC 1000 MCH3209 IC / IB=20 3 2 0.1 7 5 C 75 Ta= C --25 3 2 C 25 0.01 7 5 3 2 0.001 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A 2 3 5 7 10 IT04004 No.7129-3/5 MCH3109 / MCH3209 VCE(sat) -- IC 3 2 --1.0 7 5 3 2 C 75 Ta= C 5C --25 2 3 2 --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 MCH3109 IC / IB=50 3 2 Ta= --25C 75C 5 25C 3 2 --0.1 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 VBE(sat) -- IC MCH3209 IC / IB=50 5 3 2 Ta= --25C 1.0 7 75C 5 3 2 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 IT04008 PC -- Ta 2 m 0.2 ) m 8m 0. Collector-to-Emitter Voltage, VCE -- V 0.4 m 00 (6 2 0.6 d 7 10 0.8 ar 5 25C bo 3 5 7 10 IT04006 ic am 2 3 er 7 1.0 2 ac 5 5 7 1.0 on MCH3109 / MCH3209 Ta=25C Single pulse For PNP, minus sign is omitted. Mounted on a ceramic board (600mm20.8mm) 3 3 ed n 2 2 nt s tio 0.01 0.1 5 7 0.1 ou 3 2 0m era 3 M 10 3 2 0.1 7 5 s 0 ms 50 s 10 s 0 1m op 2 1.0 ICP=5A IC=3A DC 3 2 Collector Current, IC -- A ASO 1.0 7 5 C 75 Ta= C 5C --25 2 10 3 2 0.1 7 5 0.1 0.01 5 7 --10 IT04007 Collector Current, IC -- A 10 7 5 3 2 7 Base-to-Emitter Saturation Voltage, VBE(sat) -- V Base-to-Emitter Saturation Voltage, VBE(sat) -- V 5 7 1.0 7 5 10 7 --1.0 3 2 Collector Current, IC -- A VBE(sat) -- IC --10 MCH3209 IC / IB=50 0.01 0.01 5 7 --10 IT04005 Collector Current, IC -- A Collector Current, IC -- A Collector-to-Emitter Saturation Voltage, VCE(sat) -- V MCH3109 IC / IB=50 --0.1 7 5 VCE(sat) -- IC 10 7 5 Collector Dissipation, PC -- W Collector-to-Emitter Saturation Voltage, VCE(sat) -- V --10 7 5 0 3 5 IT04010 0 50 100 150 Ambient Temperature, Ta -- C 200 IT04011 No.7129-4/5 MCH3109 / MCH3209 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, 2001. Specifications and information herein are subject to change without notice. PS No.7129-5/5