TLP127 TOSHIBA Photocoupler IRED & Photo-Transistor TLP127 Programmable Controllers DC-Output Module Telecommunication Unit: mm The TOSHIBA mini-flat coupler TLP127 is a small outline coupler, suitable for surface mount assembly. TLP127 consists of an infrared emitting diode, optically coupled to a Darlington photo transistor with an integral base-emitter resistor. * Collector-emitter voltage : 300 V (min) * Current transfer ratio : 1000 % (min) * Isolation voltage : 2500 Vrms (min) * UL-recognized : UL 1577, File No. E67349 * cUL-recognized : CSA Component Acceptance Service No.5A File No.E67349 * VDE-approved : EN 60747-5-5 (Note 1) TOSHIBA 11-4C1 Weight: 0.09 g (typ.) Note 1: When a VDE approved type is needed, please designate the Option (V4). Pin Configurations (top view) 1 6 3 4 1: ANODE 3: CATHODE 4: EMITTER 6: COLLECTOR Start of commercial production (c) 2019 Toshiba Electronic Devices & Storage Corporation 1 1988-04 2019-05-27 TLP127 Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit IF 50 mA IF/C -0.7 mA/C Pulse forward current (100 s pulse, 100 pps) IFP 1 A Reverse voltage VR 5 V Diode power dissipation PD 100 mW PD/C -1.39 mW/C Forward current Forward current derating LED (Ta 53C) Diode power dissipation derating (Ta 53C) Detector Junction temperature Tj 125 C Collector-emitter voltage VCEO 300 V Emitter-collector voltage VECO 0.3 V Collector current IC 150 mA Collector power dissipation PC 150 mW PC/C -1.5 mW/C Collector power dissipation derating (Ta 25C) Junction temperature Storage temperature range Operating temperature range Lead soldering temperature (10 s) Total package power dissipation Total package power dissipation derating (Ta 25C) Isolation voltage (AC, 60 s, R.H. 60 %) (Note 1) Tj 125 C Tstg -55 to 125 C Topr -55 to 100 C Tsol 260 C PT 200 mW PT/C -2.0 mW/C BVS 2500 Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc.). Note 1: Device considered a two terminal device: Pins 1, 3 shorted together and pins 4, 6 shorted together. Recommended Operating Conditions Characteristic Symbol Min Typ. Max Unit Supply voltage VCC 200 V Forward current IF 16 25 mA Collector current IC 120 mA Topr -25 85 C Operating temperature Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. (c) 2019 Toshiba Electronic Devices & Storage Corporation 2 2019-05-27 TLP127 Electrical Characteristics (Ta = 25C) Detector LED Characteristic Symbol Test Condition Min Typ. Max Unit Forward voltage VF IF = 10 mA 1.0 1.15 1.3 V Reverse current IR VR = 5 V 10 A Capacitance CT V = 0 V, f = 1 MHz 30 pF IC = 0.1 mA 300 V Collector-emitter breakdown voltage V(BR)CEO Emitter-collector breakdown voltage V(BR)ECO Collector dark current ICEO Capacitance collector to emitter CCE IE = 0.1 mA 0.3 V VCE = 200 V 10 200 nA VCE = 200 V, Ta = 85 C 20 A V = 0 V, f = 1 MHz 12 pF MIn Typ. Max Unit Coupled Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition IC/IF IF = 1 mA, VCE = 1 V 1000 4000 % Saturated CTR IC/IF(sat) IF = 10 mA, VCE = 1 V 500 % VCE(sat) IC = 10 mA, IF = 1 mA 1.0 Collector-emitter saturation voltage IC = 100 mA, IF = 10 mA 0.3 1.2 VF = 0.7 V, VCE = 200 V 20 A Min Typ. Max Unit 0.8 pF 5x1010 1014 2500 Vrms Current transfer ratio Off-state collector current IC(off) V Isolation Characteristics (Ta = 25C) Characteristic Symbol Test Condition Capacitance (input to output) CS VS = 0 V, f = 1 MHz Isolation resistance RS VS = 500 V, R.H. 60 % Isolation voltage (c) 2019 Toshiba Electronic Devices & Storage Corporation BVS AC, 60 s 3 2019-05-27 TLP127 Switching Characteristics (Ta = 25C) Characteristic Symbol Rise time tr Fall time tf Turn-on time ton Turn-off time toff Turn-on time tON Storage time ts Turn-off time tOFF Test Condition VCC = 10 V, IC = 10 mA RL = 100 RL = 180 VCC = 10 V, IF = 16 mA (Fig.1) Min Typ. Max 40 15 50 15 5 40 80 Unit s s Fig.1: Switching time test circuit IF VCC IF ts RL VCE VCE tON (c) 2019 Toshiba Electronic Devices & Storage Corporation 4 VCC 9V 1V tOFF 2019-05-27 TLP127 IF - Ta PC - Ta 200 Collector power dissipation PC (mW) Allowable forward current IF (mA) 100 80 60 40 20 0 -20 0 40 20 60 80 100 160 120 80 40 0 -20 120 0 40 20 I F - VF Pulse width 100s Ta = 25C 50 Ta = 25C 1000 300 Forward current Pulse forward current 500 100 50 30 10-3 120 100 IF (mA) IFP (mA) IFP - DR 10 100 80 Ambient temperature Ta (C) Ambient temperature Ta (C) 3000 60 10-2 10-1 30 10 5 3 1 0.5 0.3 100 0.1 0.6 Duty cycle ratio DR 0.8 1.0 1.2 1.4 1.6 1.8 2.6 3.0 Forward voltage VF (V) IFP - VFP (mA) 1000 IFP -2.8 -2.4 Pulse forward current Forward voltage temperature coefficient VF / Ta (mV / C) VF / Ta - IF -3.2 -2.0 -1.6 -1.2 -0.8 -0.4 0.1 0.3 0.5 1 3 Forward current 5 10 30 500 300 100 50 30 10 IF (mA) Repetitive 3 1 0.6 50 Pulse width 10s 5 Frequency = 100Hz Ta = 25C 1.0 1.4 1.8 2.2 Pulse forward voltage VFP (V) NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. (c) 2019 Toshiba Electronic Devices & Storage Corporation 5 2019-05-27 TLP127 IC - VCE IC - IF 160 300 Ta = 25C (mA) IC (mA) 4mA 10mA Collector current Collector current IC 120 2mA 80 1mA 40 Sample A 100 50 30 Sample B 10 5 Ta = 25C VCE = 1.2V VCE = 1V 3 IF = 0.5mA 0 0.4 1 0.8 1.6 1.2 0.5 2.0 1 3 10 Forward current Collector-emitter voltage VCE (V) Switching Time - RL 10000 Ta = 25C VCC = 10V 500 50 100 IF (mA) Ta = 25C VCE = 1.2V VCE = 1V Sample A 5000 300 Current transfer ratio IC / IF (%) tOFF(IF = 16mA) 100 tOFF(IF = 1.6mA) 50 30 IC / IF - IF 1000 Switching time (s) 5 30 tON(IF = 1.6mA) 10 5 3 3000 Sample B 1000 500 300 tON(IF = 16mA) 1 50 100 300 500 1k Load resistance RL 3k 5k 100 0.3 10k (k) 0.5 1 3 5 Forward current 30 10 50 IF (mA) NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. (c) 2019 Toshiba Electronic Devices & Storage Corporation 6 2019-05-27 TLP127 IC - Ta ICEO - Ta 101 120 (mA) 80 IF = 10mA 60 40 1mA 20 0 -40 10-1 -20 0 20 40 60 80 100 80 100 Ambient temperature Ta (C) VCE = 200V 150V 80V 10-2 VCE(sat) - Ta 1.2 IF = 1mA IC = 10mA Collector-emitter saturation voltage VCE(sat) (V) Collector dark current ICEO (A) 100 100 Collector current IC VCE = 1V 10-3 1.0 0.8 0.6 0.4 0.2 10-4 0 20 40 60 80 0 -40 100 Ambient temperature Ta (C) -20 0 20 40 60 Ambient temperature Ta (C) NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. (c) 2019 Toshiba Electronic Devices & Storage Corporation 7 2019-05-27 TLP127 RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as "TOSHIBA". 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