Technical Publication TP202C Issue 1 November 1984 Gi) WESTCODE (A LAE D MM 9709955 000c0L7 4 SEMICONDUCTORS WESTCODE SEMICONDUCTORS Inverter Grade Capsule Thyristor Type P202C T-25-17 330 amperes average: up to 1200 volts VanwVpam Ratings (Maximum values at 125C Tj unless stated otherwise) RATING CONDITIONS SYMBOL 55C heatsink temperature . 330A Average on-state current Half sine wave (double side cooled) hav, gsc heatsink temperature 120A (single side cooled) R.M.S. on-state current 25C heatsink temperature, double side cooled hams: 670A Continuous on-state current 25C heatsink temperature, double side cooled h 525A Peak one-cycle surge 10ms duration, 60% Vaa, re-applied bse 3250 A (non-repetitive) on state current 10ms duration, Vas 10 volts brs 21 3575 A . oe 1 duration, < ! 63900 A, Maximum permissible surge energy ae duration. vee 10 vite i (21 47000 A Peak forward gate current Anode positive with respect to cathode leom 18 A Peak forward gate voitage Anode positive with respect to cathode Veco 12V Peak reverse gate voltage Vacom 5V Average gate power Py 15W Peak gate power 100us pulse width Pom 60 Ww Rate of rise of off-state voltage To 80% Vorm gate open-circuit dv/dt *200 V us Rate of rise of on-state current di/dt (1) 500 A. us (repetitive) Gate drive 20 volts, 20 ohms witht, Tus Rate of rise of on-state current Anode voltage > 80% Voam di/dt (2) 1000 A us (non-repetitive) Operating temperature range Ths 40 - 125C Storage ternperature range Trig - 40+ 150C Characteristics (Maximum values at 125C Tj unless stated otherwise) CHARACTERISTIC CONDITIONS SYMBOL Peak on-state voltage At 715 A, hin Vem 2.17 V Forward conduction threshold voltage Vo 1.55 V Forward conduction slope resistance . t 0.87 mn Repetitive peak off-state current : At Voam lonm 30 mA Repetitive peak reverse current At Vanm nam 30 mA Maximum gate current required to fire all devices Igy 200 mA Maximum gate voltage required to fire all devices } At 28C, V,= { Vor 3V Maximum holding current 6V,=1A hy 600 mA Maximum gate voltage which will not trigger any device Veo 0.25V Stored charge t 300 A, dir/dt 20 A/ps . Vr oo 50% chord value Gr, typical 20uC Circuit commutated turn-off time 200V /us to 80% Vory| 4 25-40 us available down to diate SO OA us, Vam= 20V /uS 10 80% Vorw| ta typical 15-35 ps Thermal resistance, junction to heat sink, Double side cooled Pen 0.095C/W for a device with a maximum forward volt Single side cooled ipl 0.190C/W Grop characteristic VOLTAGECODE 2436 F-09 Ho2 | Ho3 | Hos | Hos | Hos | H10 | H12 Repetitive peak voiteges Vaam Vorm Non-repetitive peak off-state voltage Vosm 200 300 400 600 800 1000 1200 Non-repetitive peak reverse biocking voltage | Vasm | 300 400 500 700 900 1100 1300 Ordering Information (Please quote device code as explained below) P 202 C ees e e 0 dv/dt code 10.80% Vonm | ox = ag ULMOft time Fixed Voltage Code C=20V/us E = 100V/us H= 30 hs Saat type code (see ratings) D=50V/us F=200V/us | K=20us L=15 us ) Typical code: P202CHOSFJO = 600 Vary 600 Vor 200 V/ns dv/dt to 80% Vops, 25 us turn-off Other values of dv/dt up to 1000 V/s, and turn-off time may be available.WESTCODE SEMICONDUCTORS (a) (b) (c} (d) {e) (a) LIE D INTRODUCTION The P202C thyristor series are diffused regenerative gate devices employing a 24 mm slice in a cold weld housing. NOTES ON THE RATINGS Rate of rise of on-state current The maximum un-primed rate of rise of on-state current must not exceed 1000 A/ys at any time during turn-on on a non-repetitive basis. For repetitive performance the on-state rate of rise of current must not exceed 500 A/xs at any time during turn-on, Note that these values of current rate of rise apply to the circuit external to the device and its specified snubber network and device current rates of rise will be higher. Square wave ratings These ratings are given for leading edge linear rates of rise of forward current of 100 and 500 A/us. Duty Cycle Lines The 100% duty cycle line appears on all these ratings, These frequency ratings are presented in the form that all duty cycles may be represented by straight parallel lines. Maximum operating Frequency The maximum operating frequency, fms, is set by the time required for the thyristor to turn off (tq) and for the off-state voltage to reach full value (tv), i.e. 1 ~ toutse + tq + tv Energy per pulse characteristics These curves enable rapid estimation of device dissipation to be obtained for conditions not covered by the frequency ratings. Let E, be the Energy per pulse for a given current and pulse width, in joules. Then Way = Ep xf. REVERSE RECOVERY LOSS On account of the number of circuit variables affecting reverse recovery voltage, no allowance for reverse recovery loss has been made in these ratings. The following procedure is recommended for use where it is necessary to include reverse recovery loss. Determination by Measurement From waveforms of recovery current obtained from a high frequency shunt (see Note 1) and reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be constructed. Let the area under this waveform be A joules per pulse. A new heat sink temperature can then be evaluated from: Tsink (new) = Tginx (original) A (1 RinX fmax where r,= 1.64 x 10-4/t t= duration of reverse recovery loss per pulse in microseconds A= Area under reverse loss waveform per pulse in joules (W.S.) f =rated frequency at the original heat sink temperature (b) (a) (b) mm 9709955 coo2o1a &b mt 7-25-/9 The total dissipation is now given by Witot) = Wiorginan + A x f Design Method In circumstances where it is not possible to measure voltage and current conditions, or for design purposes, the additional losses may be estimated from figure 7. A typical R-C snubber network is connected across the thyristor to control the transient reverse voltage waveform, Let E be the value of energy per reverse cycle in joules (figure 7), Let f be the operating frequency in Hz then Tsink new = Tsink original - ERin xf where Tsixnx new is the required maximum heat sink temperature and Tginx Original is the heat sink temperature given with the frequency ratings. GATE DRIVE The recommended gate drive is 20 V, 20 ohms with a short-circuit current rise time of not more than 1 ys. This gate drive must be applied when using the full di/dt capability of the device. THE DV/DT SUPPRESSION NETWORK The effect of a conventional resistor-capacitor snubber of 0,22 nF 22 ohms has been included in these ratings and all rating di/dt values apply to the circuit external to the thyristor and its suppression network, Snubber Network Values A series connected C-R filter may be required across the anode to cathode terminals of the thyristor for the purpose of reducing off-state voltage overshoot. The optimum values for C and R depend partly on the circuits connected to the thyristor. For most applications the snubber design values should not exceed a maximum of 0.22 uF or a minimum of 22 ohms, Please consult Westcode for values outside these limits. NOTE 1 REVERSE RECOVERY LOSS BY MEASUREMENT This thyristor has a low reverse recovered charge and peak reverse recovery current. When measuring the charge care must be taken to ensure that: -8.c, coupled devices such as current transformers are not affected by prior passage of high amplitude forward current. The measuring oscilloscope has adequate dynamic range typically 100 screen heights to cope with the initial forward current without overload, ty q- 9 LWESTCODE SEMICONDUCTORS LAE D mm 9709955 0002019 4 m 725-/7 100 100 Ths = 85C Ths = 85C 500 A/ys 100 A/us square wave Square wave ;. Peo 10 10 0.1 0.1 = = x 4 3 S 5 it! S rhyye = 0.01 :! = 0.01 | 0.01 0.1 1 10 0.01 0.1 1 10 pulse width, m secs pulse width, m.secs C Figure 1 Frequency v. pulse width Figure 2. Frequency v. pulse width 100 100 Ths = 55C Ths = 55C 500 A/us 100 A/us square wave=' square wave... 10 : 10 phe 1 1 0.1 0.1 4 . : = x a a 3 = o o = 0.01 = 0.01 0.01 0.1 1 10 0.01 0.1 1 10 pulse width, m.secs pulse width, m.secs 3 Figure 3 Frequency v. pulse width Figure 4 Frequency v. pulse widthWESTCODE SEMICONDUCTORS 100 10 LIE D mm 9709955 oo0z020 4 mi 725-/9 100 10 # 1 1 i i in] 2 2 Tj = 125C . Tj = 125C g 500 A/yus 2 100 A/us a square wave 2 square wave |! 2 & 1 : o o j i ii c c vil veel : 5 0.01 & 0.01 ; 0.01 0.1 i 10 0.01 0.1 1 10 pulse width, m.secs pulse width, m.secs Figure 5 Energy/pulse v. pulse Figure 6 Energy/pulse v. pulse width width . 0.1 0,05 0.03 0.01 3 30.005 2 80.003 snubber connected 0.22 nF 22 2 a peak reverse voltage Vay = 0.67 Varm max. (804 volts) a o - 50.001 iv 10 20 commutating di/dt, A/ps 50 1 00 200 Figure 7 Max. reverse recovery energy loss per pulse at 125C junction temperature and Vay = 804 volts. cwem, fm, oo 100 Ths = 85C sine wave it 10 0.1 frequency, KHz 0.01 0.01 0.1 1 pulse width, m.secs 10 Figure 8 Frequency v. pulse width 100 Ths = 55C F sine wave 10 0.1 frequency, KHz 0.01 0.01 0.1 1 pulse width, m.secs Figure 10 Frequency v. pulse width 10 recovered charge, Q,,, microcoulombs loofZUESTCODE 8 SEMICONDUCTORS LOE D mm@ 9709955 coo20e. b = ft Corie bor ferrerer 7-25-/ 10 yw 0.1 & > 2 Z Tj = 125C a sine wave =: & a 2 porte 0.01 . 0.01 . 0.1 1 10 pulse width, m.secs Figure 9 Energy/pulse v. pulse width 400 300 100 8s 40 20 3 40 50 400 200 commutating di/dt, A/ys Figure 11. Typical recovered charge at 125C junction temperaturetransient thermal impedance, C/v gate voltage, V;;, volts peak on-state current, amperes @ WESTCODE SEMICONDUCTORS AE D MM 9709955 0002022 & mm 7T-25-/9 1.0F=== == SS SS SE = 10 10 - a Tr vay 0 3 __. ~ We OOS vee = oe a wn O a a. WSS Mee e a a > he ven: 5S = E rae = 6 sar ~ ae ard : 8 REVERSE VO: TAGE ACROSS THYRISTOR MAIN AIMED DUP AT > a ANG AFTER SURGE igete ery temnpoterity wed Corto of Seung erage w : ; 5 Yr x PF: 0.001 1 8 of a WE -g 0.001 0.01 0.1 1 10 1 100.5 5 10 50 100 ) time, seconds m.secs cycles at 50 Hz : . ra . duration of surge . Figure 12 Junction to heatsink Figure 13 Max. non-repetitive surge current transient thermal at initial junction temperature 125C impedance Note: This rating must not be interpreted as an intermittent rating 12 : , : . an i : yo. GE 10: \ : - S ? 8, an $ : t > = * 52 E 6. > F -eeo oo _ 2 3 4 Tn Gale shracter ates oF ore se & : 4 oe Ue nese furves S 1 2 > z 2 : & 0 0 100 200 300 400 > gate current, Ic, milliamperes f 0.1 0305 1 3.5 10 30 50 100 Figure 15 Gate triggering c gate current, Ig, amperes characteristics. OY Figure 14 Gate characteristics at Trigger points of all thyristors le within the or; : areas shown Gate drive load line must lie 25C junction temperature outside appropriate I, Vc, rectangle 4000 2000 1000 Co dimensions in mm (inches) Mounting force: 330-550 kgf 500 Weight: 70 grams COMPRESSED HEIGHT, 19 : TS} j ! peste) . | . t 100 @1s (08 10 14 #18 22 26 30 34 38 4.2 Lo.si.ot} FOR AMP REC, on-state voltage, volts 4.4/9.4 No 60598-1 . . (56/51) 36x19 | OT. m~ Figure 16 Limit on-state current (a x475) C8 TO~200AB J {n the interest of product improvement, Wesicode reserves the right to change specifications af any time without notice WESTCODE SEMICONDUCTORS LTD P.O. Box 57 Chippenham Wiltshire SN15 1JL England | Telephone Chippenham (0249) 654141 Telex 44751 fg HAWKER SIDDELEY Westinghouse Brake and Signal Co. Ltd.