IRSM005-800MH
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80A, 40V
Description
The IRSM005-800MH is a general purpose half-bridge with integrated gate driver in an attractive 7x8mm
PQFN package. It is a general purpose building block suitable for a variety of low voltage applications where
power density is of critical importance. Typical examples would be advanced motor drives, dc-to-ac and dc-
to-dc converters.
Features
• Package with low thermal resistance and minimal parasitics
• Low on-resistance HEXFETs: 2.7 mΩ typ.
• Undervoltage lockout on logic supply
• Independent gate drive in phase with logic input
• Gate drive supply range from 10V to 20V
• Propagation delay matched to defined spec
• 3.3V, 5V and 15V logic input compatible
• RoHS compliant
Internal Electrical Schematic
Ordering Information
Orderable Part Number Package Type Form Quantity
IRSM005800MH PQFN 7x8mm Tray 1300
IRSM005800MHTR PQFN 7x8mm Tape and Reel 2000
Half-Bridge IPM for Low Voltage
Applications
IRSM005-800MH
2 www.irf.com © 2014 International Rectifier March 19, 2014
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the module may occur. These are
not tested at manufacturing. All voltage parameters are absolute voltages referenced to V
SS
unless otherwise
stated in the table. The thermal resistance rating is measured under board mounted and still air conditions.
Symbol Description Min Max Unit
V
DS
MOSFET Drain-to-Source Voltage --- 40 V
I
o
Maximum DC current per MOSFET @ T
C
=25°C (Note1) --- 80 A
P
d
Maximum Power dissipation per MOSFET @ T
C
=100°C --- 13 W
T
J
(MOSFET & IC) Maximum Operating Junction Temperature --- 150 °C
T
S
Storage Temperature Range -40 150 °C
V
GS
Gate to Source voltage +/- 20
V
B
High side floating absolute supply voltage -0.3 225
V
S
High side floating supply offset voltage V
B
- 20 V
B
+ 0.3
V
CC
Low Side fixed supply voltage -0.3 25
V
LO
Low side output voltage -0.3 V
CC
+0.3V
V
HO
High side output voltage -0.3 V
CC
+0.3V
V
IN
Logic input voltage LIN, HIN -0.3 V
CC
+0.3V
V
Note1: Calculated based on maximum junction temperature. Bond wires current limit is 49A
Inverter Static Electrical Characteristics
V
BIAS
(V
CC
, V
BS
)=15V, TJ=25ºC, unless otherwise specified.
Symbol Description Min Typ Max Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 40 --- --- V H
IN
=L
IN
=0V, I
D
=250µA
V
GS(TH)
Gate Threshold Voltage 2 --- 4 V I
D
=100µA
--- 2.7 5.0 I
D
=10A, T
J
=25°C
R
DS(ON)
Drain-to-Source Voltage
--- 4.2
mΩ
I
D
=10A, T
J
=150°C
--- 20 H
IN
=L
IN
=0V, V
+
=40V
I
DSS
Zero Gate Voltage Drain Current
--- --- 150
µA H
IN
=L
IN
=0V, V
+
=40V,
T
J
=125°C
Gate to Source Forward Leakage --- --- 100 V
GS
=20V
I
GSS
Gate to Source Reverse Leakage --- --- -100
nA
V
GS
=-20V
R
G
Internal Gate Resistance --- 1.5 --- Ω
--- 0.8 0.9 I
F
=10A
V
SD
Mosfet Diode Forward Voltage Drop
--- 0.55
V
I
F
=10A, T
J
=150°C
RBSOA Reverse Bias Safe Operating Area FULL SQUARE, limited by T
Jmax
V
+
= 40V,
V
CC
=+15V to 0V
I
o
@ T
A
=60°C RMS Phase Current, sinusoidal
modulation, 5kHz --- 13.5 --- A
RMS
I
o
@ T
A
=60°C RMS Phase Current, sinusoidal
modulation, 20kHz --- 6 --- A
RMS
V+=32V, TJ=125°C, MI=1,
PF=0.8, typical board
mount. See Figure 2.
EAS Single Pulse Avalanche Energy 9.2 --- --- mJ
IRSM005-800MH
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Inverter Dynamic Electrical Characteristics
V
BIAS
(V
CC
, V
BS
)=15V, TJ=25ºC, unless otherwise specified.
gfs Forward Transconductance 159 --- --- S I
D
=50A V
DS
= 10V
Q
G
Total Gate Charge --- 65 98
Q
GS
Gate to Source Charge --- 16 ---
Q
GD
Gate to Drain Charge --- 23 ---
I
D
=50A
V
DS
= 20V
V
GS
=10V
Q
SYNC
Total Gate Charge Sync. (Q
G
- Q
GD )
--- 42 ---
nC
I
D
=50A,V
DS
= 0V,V
GS
= 10V
T
DON
Mosfet Turn On Delay Time --- 11 ---
T
R
Mosfet Rise Time --- 37 ---
T
DOFF
Mosfet Turn Off Delay Time --- 33 ---
T
F
Mosfet Fall Time --- 26 ---
ns
I
D
=30A
V
DD
= 20V
V
GS
=10V
R
G
=2.7Ω
C
ISS
Input Capacitance --- 3174 ---
C
OSS
Output Capacitance --- 479 ---
C
RSS
Reverse Transfer Capacitance --- 332 ---
pF
F= 1.0MHz
V
DS
= 25V
V
GS
=0V
T
RR
Reverse Recovery TIme --- 16 --- ns
Q
RR
Reverse Recovery Charge --- 5 --- nC
I
RRM
Reverse Recovery Current --- 0.5 --- A
I
F
=50A
V
R
=34V
dI/dt= 100A/us
Recommended Operating Conditions Driver Function
For proper operation the device should be used within the recommended conditions. All voltages are absolute
referenced to COM. The VS offset is tested with all supplies biased at 15V differential.
Symbol Definition Min Typ Max Units
V
B
High side floating supply voltage V
S
+10 V
S
+15 V
S
+20 V
V
S
High side floating supply offset voltage Note 1 --- 40 V
V
CC
Low side and logic fixed supply voltage 10 15 20 V
V
IN
Logic input voltage LIN, HIN COM --- V
CC
V
HIN High side PWM pulse width 1 --- --- µs
Deadtime Suggested dead time between HIN and LIN 0.3 0.5 --- µs
IRSM005-800MH
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Static Electrical Characteristics Driver Function
V
BIAS
(V
CC
, V
BS
)=15V, T
J
=25ºC, unless otherwise specified. The V
IN
, and I
IN
parameters are
referenced to COM
Symbol Definition Min Typ Max Units Test
Conditions
V
IH
Positive going input threshold for LIN, HIN 2.5 --- ---
V
IL
Negative going input threshold for LIN, HIN --- --- 0.8
V
CC
=10 to
20V
V
OH
High Level Output Voltage --- 0.05 0.2 I
O
=2mA
V
OL
Low Level Output Voltage --- 0.02 0.1
V
CCUV+
V
BSUV+
V
CC
/V
BS
supply undervoltage, Positive going
threshold 8.0 8.9 9.8
V
CCUV-
V
BSUV-
V
CC
/V
BS
supply undervoltage, Negative going
threshold 7.4 8.2 9.0
V
CCUVH
V
BSUH
V
CC
/V
BS
supply undervoltage lock-out hysteresis --- 0.8 ---
V
I
LK
Offset Supply Leakage Current --- --- 50 V
B
=V
S
=200V
I
QBS
Quiescent V
BS
supply current --- 45 75
I
QCC
Quiescent V
CC
supply current --- 250 500
V
IN
=0V or 5V
I
IN+
Input bias current V
IN
=5V for LIN, HIN --- 4 10 V
IN
= 5V
I
IN-
Input bias current V
IN
=0V for LIN, HIN --- 0.5 1
µA
V
IN
=0V
I
O+
IC high output short circuit current 200 290 ---
I
O-
IC low output short circuit current 420 600 ---
mA
V
O
= 0V,
V
IN
= 5V,
PW <10us
Dynamic Electrical Characteristics Driver Function
V
BIAS
(V
CC
, V
BS
)=15V, TJ=25ºC unless otherwise specified, C
L
= 1000 pF, Driver only timing.
Symbol Description Min Typ Max Units Conditions
T
R
IC Turn on Rise Time --- 50 150
T
F
IC Turn off Fall Time --- 35 90
T
ON
IC Input to Output propagation turn-
on delay time --- 160 220
T
OFF
IC Input to Output propagation turn-
off delay time --- 150 220
MT IC Delay matching, HS and LS turn-
on/off --- --- 50
ns
IRSM005-800MH
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Thermal and Mechanical Characteristics
Symbol Description Min Typ Max Units Conditions
R
th(J-B)
Thermal resistance, junction to
mounting pad, each MOSFET --- 3.8 --- °C/W Standard reflow-solder
process
R
th(J-A)
Thermal resistance, junction to
ambient, each MOSFET --- 40 --- °C/W Mounted on 50mm
2
of
four-layer FR4 with 28 vias
Input-Output Logic Level Table
HIN LIN U,V,W
HI HI Shoot-through
LO LO **
HI LO V+
LO HI 0
* V+ if motor current is flowing into VS, 0 if current is flowing out of VS into the motor winding
IRSM005-800MH
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4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
RDS(on), Drain-to -Source On Resistance (mΩ)
ID = 50A
TJ = 25°C
TJ = 125°C
Fig. 1 Typical On Resistance vs Gate Voltage
3 4 5 6 7 8
VGS, Gate-to-Source Voltage (V)
1.0
10
100
1000
ID, Drain-to-Source Current (A)
TJ = 25°C
TJ = 150°C
VDS = 10V
≤60µs PULSE WIDTH
Fig. 3 Typical Transfer Characteristic
0.1 1 10 100
VDS
, Drain-to-Source Voltage (V)
1
10
100
1000
ID, Drain-to-Source Current (A)
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
≤60µs PULSE WIDT H
Tj = 25°C
4.5V
Fig. 5 Typical Output Characteristic @ 25C
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
0.6
0.8
1.0
1.2
1.4
1.6
1.8
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 50A
VGS = 10V
Fig.2 Normalized On Resistance vs Temperature
0.1 1 10 100
VDS
, Drain-to-Source Voltage (V)
1
10
100
1000
ID, Drain-to-Source Current (A)
4.5V
≤60µs PULSE WIDTH
Tj = 150°C
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
Fig.4 Typical Output Characteristic @ 150C
1 10 100
VDS, Drain-to-Source Voltage (V)
100
1000
10000
100000
C, Capacitance (pF)
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
Fig. 6 Typical Capacitance vs Drain to Source
Voltage
IRSM005-800MH
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0 10 20 30 40 50 60 70 80 90
QG, Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
VGS, Gate-to-Source Voltage (V)
VDS= 32V
VDS= 20V
ID= 50A
Fig. 7 Typical Gate Charge vs Gate Voltage
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Temperature ( °C )
40
42
44
46
48
50
V(BR)DSS, Drain-to-Source Breakdown Voltage (V)
Id = 1.0mA
Fig. 9 Typical Breakdown Voltage vs Temperature
0 200 400 600 800 1000
diF /dt (A/µs)
0
1
2
3
4
5
6
7
IRRM (A)
IF = 30A
VR = 34V
TJ = 25°C
TJ = 125°C
Fig. 11 Typical Recovery Current vs dI/dt
0.0 0.4 0.8 1.2 1.6 2.0
VSD, Source-to-Drain Voltage (V)
1.0
10
100
1000
ISD, Reverse Drain Current (A)
TJ = 25°C
TJ = 150°C
VGS = 0V
Fig.8 Typical Diode Forward Voltage Drop
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
1.5
2.0
2.5
3.0
3.5
4.0
4.5
VGS(th), Gate threshold Voltage (V)
ID = 100µA
ID = 1.0mA
ID = 1.0A
Fig.10 Threshold Voltage vs Temperature
0 200 400 600 800 1000
diF /dt (A/µs)
0
20
40
60
80
100
QRR (nC)
IF = 30A
VR = 34V
TJ = 25°C
TJ = 125°C
Fig. 12 Typical Recovery Charge vs Temperature
IRSM005-800MH
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Module Pin-Out Description
Pin Name Description
3, 6, 8 COM Negative of Gate Drive Supply Voltage
2 V
CC
15V Gate Drive Supply
4 HIN Logic Input for High Side (Active High)
5 LIN Logic Input for Low Side (Active High)
7 LO Low Side FET Gate
9 G2 Low Side Gate Drive Output
10, 16, 17 V
S
Phase Output
11 – 15 V- Low Side Source Connection
18 – 23 V+ DC Bus
24 G1 High Side Gate Drive Output
25 HO High Side FET Gate
26 – 27 V
S
Negative of Bootstrap Supply
1 V
B
Positive of Bootstrap Supply
BOTTOM OF PACKAGE VIEW
VBVCCCOMHINLINCOM
LO 7
G2 9
VS
V- 11
V- 12
V- 13
V- 14
16 VS
V- 15
17 VS 18-V+
19
20 V+
21 V+
22 V+
23 V+
COM 8 26 VS
24 G1
25 HO
27 VS
V+
10
123456
Exposed pad (Pin 28) has to be connected to COM for better electrical performance
28
IRSM005-800MH
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Figure 13: Typical Application Connection
1. Bus capacitors should be mounted as close to the module bus terminals as possible to reduce ringing
and EMI problems. Additional high frequency ceramic capacitor mounted close to the module pins will
further improve performance.
2. Value of the boot-strap capacitors depends upon the switching frequency. Their selection should be
made based on IR Design tip DT04-4 or application note AN-1044.
0
2
4
6
8
10
12
14
16
18
20
0.1 1 10 100
Ser ies1
Figure 14: Typical Output Current (RMS of fundamental) vs. Modulation Frequency
Sinusoidal Modulation, V
+
=32V, T
J
=125°C, T
A
=60°C, MI=1, PF=0.8, mounted on 50 mm
2
of FR4
IRSM005-800MH
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Qualification
Qualification Level Industrial
††
(per JEDEC JESD 47E)
Moisture Sensitivity Level MSL3
†††
(per IPC/JEDEC J-STD-020C)
Machine Model Class B (±200V)
(per JEDEC standard JESD22-A115A)
ESD
Human Body Model Class 1C (±1000V)
(per EIA/JEDEC standard EIA/JES-001A-2011)
RoHS Compliant Yes
† Qualification standards can be found at International Rectifier’s web site
HU
http://www.irf.com/
U
††
Higher qualification ratings may be available should the user have such requirements. Please contact
your International Rectifier sales representative for further information.
†††
Higher MSL ratings may be available for the specific package types listed here. Please contact your
International Rectifier sales representative for further information.
IRSM005-800MH
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Package Outline (Top & Side view)
IRSM005-800MH
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Package Outline (Bottom View, 1 of 2)
1. For mounting instruction see AN-1178.
2. For recommended PCB via design see AN-1091.
3. For recommended design, solder profile, integration and rework guidelines see AN-1028.
4. For board inspection guidelines see AN-1133.
IRSM005-800MH
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Tape and Reel Details
IRSM005-800MH
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Data and Specifications are subject to change without notice
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
Mouser Electronics
Authorized Distributor
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IRSM005-800MHTR IRSM005-800MH