BSS84P SIPMOS Small-Signal-Transistor Feature Product Summary * P-Channel * Enhancement mode * Logic Level * Avalanche rated * dv/dt rated VDS RDS(on) ID -60 V 8 W -0.17 A PG-SOT-23 3 * Qualified according to AEC Q101 2 * Halogen-free according to IEC61249-2-21 1 Type Package Tape and Reel BSS84P PG-SOT-23 H6327:3000pcs/r. YBs BSS84P PG-SOT-23 H6433:10000pcs/r. YBs VPS05161 Drain pin 3 Marking Gate pin1 Source pin 2 Maximum Ratings, at TA = 25 C, unless otherwise specified Parameter Symbol Continuous drain current ID Value A TA=25C -0.17 TA=70C -0.14 I D puls Pulsed drain current Unit -0.68 TA=25C mJ EAS 2.6 Avalanche energy, periodic limited by Tjmax EAR 0.036 Reverse diode dv/dt dv/dt -6 Gate source voltage VGS 20 V Power dissipation Ptot 0.36 W -55... +150 C Avalanche energy, single pulse ID=-0.17 A , VDD=-25V, RGS=25W kV/s IS=-0.17A, VDS=-48V, di/dt=-200A/s, Tjmax=150C TA=25C Operating and storage temperature IEC climatic category; DIN IEC 68-1 ESD Class JESD22-A114-HBM Rev 2.7 T j , Tstg 55/150/56 Class 0 Page 1 2011-07-11 BSS84P Thermal Characteristics Parameter Symbol Values Unit min. typ. max. - - 200 @ min. footprint - - 350 @ 6 cm 2 cooling area 1) - - 300 Characteristics Thermal resistance, junction - soldering point RthJS K/W (Pin 3) SMD version, device on PCB: RthJA Electrical Characteristics, at TA = 25 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS -60 - - VGS(th) -1 -1.5 -2 Static Characteristics Drain-source breakdown voltage V VGS=0, ID =-250A Gate threshold voltage, VGS = VDS ID=-20A Zero gate voltage drain current A I DSS VDS=-60V, VGS=0, TA =25C - -0.1 -1 VDS=-60V, VGS=0, TA =125C - -10 -100 I GSS - -10 -100 nA RDS(on) - 8 12 W RDS(on) - 5.8 8 Gate-source leakage current VGS=-20V, VDS=0 Drain-source on-state resistance VGS=-4.5V, ID=-0.14A Drain-source on-state resistance VGS=-10V, ID=-0.17A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Rev 2.7 Page 2 2011-07-11 BSS84P Electrical Characteristics, at TA = 25 C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. 0.065 0.13 - S pF Dynamic Characteristics Transconductance gfs VDS2*ID*RDS(on)max , ID=-0.14A Input capacitance Ciss VGS=0, VDS=-25V, - 15 19 Output capacitance Coss f=1MHz - 6 8 Reverse transfer capacitance Crss - 2 3 Turn-on delay time td(on) VDD=-30V, VGS=-4.5V, - 6.7 10 Rise time tr ID=-0.14A, RG=25W - 16.2 24.3 Turn-off delay time td(off) - 8.6 12.9 Fall time tf - 20.5 30.8 - 0.25 0.37 - 0.3 0.45 - 1 1.5 V(plateau) VDD=-48V, ID=-0.17A - -3.42 - IS - - -0.17 A - - -0.68 ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD=-48V, ID=-0.17A VDD=-48V, ID=-0.17A, nC VGS=0 to -10V Gate plateau voltage V Reverse Diode Inverse diode continuous TA=25C forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage VSD VGS=0, IF=-0.17A - -0.93 Reverse recovery time trr VR=-30V, IF=lS, - 23 34 ns Reverse recovery charge Qrr diF/dt=100A/s - 10 15 nC Rev 2.7 Page 3 -1.24 V 2011-07-11 BSS84P 1 Power dissipation 2 Drain current Ptot = f (TA) ID = f (TA) 0.38 parameter: VGS 10 V BSS 84 P BSS 84 P -0.18 W A 0.32 -0.14 -0.12 0.24 ID P tot 0.28 -0.1 0.2 -0.08 0.16 0.12 -0.06 0.08 -0.04 0.04 -0.02 0 0 20 40 60 80 100 120 C 0 0 160 20 40 60 80 100 120 TA 3 Safe operating area 4 Transient thermal impedance ID = f ( VDS ) ZthJA = f (tp ) parameter : D = 0 , TA = 25 C parameter : D = tp /T 1 BSS 84 P -10 10 3 A 0 10 2 Z thJA tp = 170.0s /I D -10 BSS 84 P K/W ID -10 160 C TA = -1 RD o S( VD 1 ms S 10 1 n) D = 0.50 10 ms 0.20 0.10 -10 -2 10 0 0.05 single pulse 0.02 DC -10 -3 -1 -10 -10 0 -10 1 V 0.01 -10 2 s 10 4 tp VDS Rev 2.7 10 -1 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10 Page 4 2011-07-11 BSS84P 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS) RDS(on) = f (ID) parameter: Tj = 25 C parameter: VGS ; Tj = 25 C BSS 84 P Ptot = 0.36W A 26 l k j i W h VGS [V] g a -2.5 -0.32 f ID -0.28 e -0.24 -3.5 d -4.0 e -4.5 f -5.0 -5.5 h -6.0 i -6.5 j -7.0 k -8.0 c -0.12 l a b c d e f 18 16 14 12 10 h i 8 -10.0 j k 6 l 4 V GS [V] = -0.04 2 a -0.5 -1 -1.5 -2 -2.5 -3 -3.5 -4 V 0 0 -5 a b c d e f -2.5 -3.0 -3.5 -4.0 -4.5 -5.0 g h i j -5.5 -6.0 -6.5 -7.0 ID 7 Typ. transfer characteristics 8 Typ. forward transconductance ID = f ( VGS ); |VDS | 2 x |ID | x RDS(on)max gfs = f(ID) parameter: Tj = 25 C 0.4 0.16 A S 0.3 0.12 g fs - ID parameter: Tj = 25 C 0.25 0.1 0.2 0.08 0.15 0.06 0.1 0.04 0.05 0.02 1 2 3 4 V 0 0 6 0.04 0.08 0.12 0.16 A 0.22 -ID - VGS Rev 2.7 k l -8.0 -10.0 -0.04 -0.08 -0.12 -0.16 -0.2 -0.24 -0.28 -0.32 A -0.38 VDS 0 0 g 20 b -0.08 0 0 -3.0 c d g -0.2 -0.16 b BSS 84 P 22 R DS(on) -0.4 Page 5 2011-07-11 BSS84P 9 Drain-source on-state resistance 10 Typ. gate threshold voltage RDS(on) = f (Tj ) VGS(th) = f (Tj ) parameter : ID = -0.17 A, VGS = -10 V parameter: VGS = VDS 21 W BSS 84 P 2.4 V 18 98% 16 - V GS(th) R DS(on) 2 14 12 1.8 1.6 1.4 10 98% 1.2 8 4 0.8 2 0.6 -20 20 60 2% 1 typ 6 0 -60 typ. C 100 0.4 -60 180 -20 20 60 100 TA C 160 TA 11 Typ. capacitances 12 Forward character. of reverse diode C = f (VDS) IF = f (VSD) parameter: VGS =0, f=1 MHz parameter: Tj , tp = 80 s 10 2 -10 0 BSS 84 P A pF Ciss C IF -10 -1 Coss 10 1 -10 -2 Tj = 25 C typ Crss Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 0 0 5 10 V 20 -0.4 -0.8 -1.2 -1.6 -2 -2.4 V -3 VSD - VDS Rev 2.7 -10 -3 0 Page 6 2011-07-11 BSS84P 13 Typ. avalanche energy 14 Typ. gate charge EAS = f (TA), parameter: VGS = f (QGate ) ID = -0.17 A , VDD = -25 V, RGS = 25 W parameter: ID = -0.17 A pulsed; Tj = 25 C 3 -16 BSS 84 P V mJ V GS E AS -12 2 1.5 -10 0,2 VDS max 0,8 VDS max -8 -6 1 -4 0.5 -2 0 25 45 65 85 105 125 C 165 0 0 0.2 0.4 0.6 0.8 1 1.2 nC 1.5 QGate TA 15 Drain-source breakdown voltage V(BR)DSS = f (TA) BSS 84 P -72 V (BR)DSS V -68 -66 -64 -62 -60 -58 -56 -54 -60 -20 20 60 100 C 180 TA Rev 2.7 Page 7 2011-07-11 BSS84P W Published by Infineon Technologies AG 81726 Munich, Germany (c) 2010 Infineon Technologies AG All Rights Reserved. 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