1. Product profile
1.1 General description
Planar PIN diode in a SOD882T leadless ultra small plastic SMD package.
1.2 Features
nHigh voltage, current controlled
nRF resistor for RF attenuators and switches
nLow diode capacitance
nLow diode forward resistance
nVery low series inductance
nFor applications up to 3 GHz
1.3 Applications
nRF attenuators and switches
2. Pinning information
[1] The marking bar indicates the cathode.
3. Ordering information
BAP1321LX
Silicon PIN diode
Rev. 01 — 30 July 2007 Product data sheet
Table 1. Discrete pinning
Pin Description Simplified outline Symbol
1 cathode [1]
2 anode
Transparent
top view
21
sym006
Table 2. Ordering information
Type number Package
Name Description Version
BAP1321LX - leadless ultra small plastic package; 2 terminals;
body 1 ×0.6 ×0.4 mm SOD882T
BAP1321LX_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 30 July 2007 2 of 8
NXP Semiconductors BAP1321LX
Silicon PIN diode
4. Marking
5. Limiting values
6. Thermal characteristics
7. Characteristics
Table 3. Marking
Type number Marking code
BAP1321LX LH
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VRreverse voltage - 60 V
IFforward current - 100 mA
Ptot total power dissipation Tsp = 90 °C - 130 mW
Tstg storage temperature −65 +150 °C
Tjjunction temperature −65 +150 °C
Table 5. Thermal characteristics
Symbol Parameter Conditions Typ Unit
Rth(j-sp) thermal resistance from junction
to solder point 74 K/W
Table 6. Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
VFforward voltage IF= 50 mA - 0.95 1.1 V
IRreverse current VR= 60 V - - 100 nA
Cddiode capacitance see Figure 1; f = 1 MHz;
VR= 0 V - 0.32 - pF
VR= 1 V - 0.27 0.38 pF
VR= 20 V - 0.21 0.28 pF
rDdiode forward resistance see Figure 2; f = 100 MHz;
IF= 0.5 mA - 3.3 5.0 Ω
IF= 1 mA - 2.4 3.6 Ω
IF= 10 mA - 1.2 1.8 Ω
IF= 100 mA - 0.9 1.3 Ω
ISL isolation see Figure 3;V
R=0V;
f = 900 MHz - 17 - dB
f = 1800 MHz - 12 - dB
f = 2450 MHz - 10 - dB
BAP1321LX_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 30 July 2007 3 of 8
NXP Semiconductors BAP1321LX
Silicon PIN diode
Lins insertion loss see Figure 4;I
F= 0.5 mA;
f = 900 MHz - 0.25 - dB
f = 1800 MHz - 0.26 - dB
f = 2450 MHz - 0.27 - dB
Lins insertion loss see Figure 4;I
F= 1 mA;
f = 900 MHz - 0.19 - dB
f = 1800 MHz - 0.20 - dB
f = 2450 MHz - 0.21 - dB
Lins insertion loss see Figure 4;I
F=10mA;
f = 900 MHz - 0.11 - dB
f = 1800 MHz - 0.13 - dB
f = 2450 MHz - 0.14 - dB
Lins insertion loss see Figure 4;I
F= 100 mA;
f = 900 MHz - 0.09 - dB
f = 1800 MHz - 0.11 - dB
f = 2450 MHz - 0.12 - dB
τLcharge carrier life time when switched from IF= 10 mA to
IR= 6 mA; RL= 100 Ω; measured at
IR=3mA
- 0.48 - µs
LSseries inductance IF= 100 mA; f = 100 MHz - 0.4 - nH
Table 6. Characteristics
…continued
T
amb
= 25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
BAP1321LX_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 30 July 2007 4 of 8
NXP Semiconductors BAP1321LX
Silicon PIN diode
f = 1 MHz; Tj=25°C. f = 100 MHz; Tj=25°C.
Fig 1. Diode capacitance as a function of reverse
voltage; typical values Fig 2. Forward resistance as a function of forward
current; typical values
VR (V)
02015510
001aag770
200
100
300
400
Cd
(fF)
0
If (mA)
10−1102
101
001aag771
10
1
102
rD
(Ω)
10−1
Tamb =25°C
Diode zero biased and inserted in series with a 50 Ω
stripline circuit
Tamb =25°C
(1) IF= 100 mA
(2) IF=10mA
(3) IF=1mA
(4) IF= 0.5 mA
Diode inserted in series with a 50 Ω stripline circuit
and biased via the analyzer Tee network
Fig 3. Isolation of the diode as a function of
frequency; typical values Fig 4. Insertion loss of the diode as a function of
frequency; typical values
001aag772
f (MHz)
0 300020001000
−20
−30
−10
0
ISL
(dB)
−40
001aag773
f (MHz)
0 300020001000
−0.6
−0.4
−0.8
−0.2
0
Lins
(dB)
−1.0
(1)
(2)
(3)
(4)
BAP1321LX_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 30 July 2007 5 of 8
NXP Semiconductors BAP1321LX
Silicon PIN diode
8. Package outline
Fig 5. Package outline SOD882T
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
SOD882T
SOD882T
04-12-14
06-04-12
Note
1. The marking bar indicates the cathode
UNIT A
mm 0.40
0.36 0.55
0.45 0.65
0.55 1.05
0.95 0.30
0.22
A1
max
DIMENSIONS (mm are the original dimensions)
Leadless ultra small plastic package; 2 terminals; body 1 x 0.6 x 0.4 mm
A
B
y
e1wB
M
L1 (2×)
A1
A
b (2×)
(2×)
(2×)
D
E
(1)
0 0.5 1 mm
scale
0.04
b D E e1
0.65
L1w
0.1
y
0.03
2
1
wA
M
BAP1321LX_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 30 July 2007 6 of 8
NXP Semiconductors BAP1321LX
Silicon PIN diode
9. Abbreviations
10. Revision history
Table 7. Abbreviations
Acronym Description
PIN P-type, Intrinsic, N-type
SMD Surface Mounted Device
RF Radio Frequency
Table 8. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BAP1321LX_1 20070730 Product data sheet - -
BAP1321LX_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 30 July 2007 7 of 8
NXP Semiconductors BAP1321LX
Silicon PIN diode
11. Legal information
11.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
11.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
11.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of a NXP Semiconductors product can reasonably be expected to
result in personal injury, death or severe property or environmental damage.
NXP Semiconductors accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or applications and therefore
such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
11.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
12. Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: salesaddresses@nxp.com
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
NXP Semiconductors BAP1321LX
Silicon PIN diode
© NXP B.V. 2007. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 30 July 2007
Document identifier: BAP1321LX_1
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
13. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 1
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 1
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 2
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 2
8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 5
9 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . . 6
10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 6
11 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 7
11.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 7
11.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
11.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
11.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
12 Contact information. . . . . . . . . . . . . . . . . . . . . . 7
13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
