TSOP22..KU1
Vishay Semiconductors
1 (7)
www.vishay.comDocument Number 82172
Rev . 1, 19–Nov–01
Photo Modules for PCM Remote Control Systems
Available Types For Different Carrier Frequencies
Type fo Type fo
TSOP2230KU1 30 kHz TSOP2233KU1 33.0 kHz
TSOP2236KU1 36 kHz TSOP2237KU1 36.7 kHz
TSOP2238KU1 38 kHz TSOP2240KU1 40.0 kHz
TSOP2256KU1 56 kHz
Description
The TSOP22.. – series are miniaturized receivers for
infrared remote control systems. PIN diode and
preamplifier are assembled on lead frame, the epoxy
package is designed as IR filter.
The demodulated output signal can directly be
decoded by a microprocessor. The main benefit is the
reliable function even in disturbed ambient and the
protection against uncontrolled output pulses. 16645
Features
Photo detector and preamplifier in one package
Internal filter for PCM frequency
TTL and CMOS compatibility
Output active low
Improved shielding against electrical field
disturbance
Suitable burst length 10 cycles/burst
Special Features
Small size package
High immunity against disturbance light
No occurrence of disturbance pulses at the output
Short settling time after power on (< 200µs)
Contiunous data transmission possible
( 800 bursts/s)
Block Diagramm
16591
PIN
Input
AGC
Control
Circuit
Band
Pass Demodu-
lator
30 k
3
2
1
VS
OUT
GND
TSOP22..KU1
Vishay Semiconductors
www.vishay.com
2 (7) Rev . 1, 19–Nov–01
Document Number 82172
Absolute Maximum Ratings
Tamb = 25°C Parameter Test Conditions Symbol Value Unit
Supply Voltage (Pin 2) VS–0.3...6.0 V
Supply Current (Pin 2) IS5 mA
Output Voltage (Pin 1) VO–0.3...6.0 V
Output Current (Pin 1) IO5 mA
Junction Temperature Tj100 °C
Storage Temperature Range Tstg –25...+85 °C
Operating Temperature Range Tamb –25...+85 °C
Power Consumption (Tamb 85 °C) Ptot 50 mW
Soldering Temperature t 10 s, 1 mm from case Tsd 260 °C
Basic Characteristics
Tamb = 25°C
Parameter Test Conditions Symbol Min. Typ. Max. Unit
Supply Current (Pin 2) VS = 5 V, Ev = 0 ISD 0.8 1.1 1.5 mA
Su ly
Current
(Pin
2)
VS = 5 V, Ev = 40 klx, sunlight ISH 1.4 mA
Supply Voltage (Pin 2) VS4.5 5.5 V
Transmission Distance Ev = 0, test signal see fig.7,
IR diode TSAL6200, IF = 250 mA d 35 m
Output Voltage Low (Pin 1) IOL = 0.5 mA,Ee = 0.7 mW/m2, f = foVOL 250 mV
Irradiance (30 – 40 kHz) Pulse width tolerance:
tpi – 5/fo < tpo < tpi + 6/fo,
test signal see fig.7
Ee min 0.2 0.4 mW/m2
Irradiance (56 kHz) Pulse width tolerance:
tpi –5/fo < tpo < tpi +6/fo,
test signal see fig.7
Ee min 0.3 0.5 mW/m2
Irradiance Ee max 30 W/m2
Directivity Angle of half transmission distance ϕ1/2 ±45 deg
Application Circuit
16610
TSAL62..
TSOP22..KU1
2
1
3
4.7 F *)
C
>10 k
optional
100 *) +5V
*) recommended to suppress power supply disturbances
**) The output voltage should not be hold continuously at a voltage below 3.3 V by the external circuit.
GND
**)
TSOP22..KU1
Vishay Semiconductors
3 (7)
www.vishay.comDocument Number 82172
Rev . 1, 19–Nov–01
Suitable Data Format
The circuit of the TSOP22..KU1 is designed in that
way that unexpected output pulses due to noise or
disturbance signals are avoided. A bandpassfilter, an
integrator stage and an automatic gain control are
used to suppress such disturbances.
The distinguishing mark between data signal and
disturbance signal are carrier frequency, burst length
and duty cycle.
The data signal should fullfill the following condition:
•Carrier frequency should be close to center
frequency of the bandpass (e.g. 38 kHz).
•Burst length should be 10 cycles/burst or longer.
•After each burst which is between 10 cycles and
70 cycles a gap time of at least 14 cycles is
neccessary.
•For each burst which is longer than 1.8 ms a
corresponding gap time is necessary at some
time in the data stream. This gap time should be at
least 4 times longer than the burst.
•Up to 800 short bursts per second can be
received continuously.
Some examples for suitable data format are:
NEC Code, Toshiba Micom Format, Sharp Code,
RC5 Code, RC6 Code, R–2000 Code.
When a disturbance signal is applied to the
TSOP22..KU1 it can still receive the data signal.
However the sensitivity is reduced to that level that no
unexpected pulses will occure.
Some examples for such disturbance signals which
are suppressed by the TSOP22..KU1 are:
•DC light (e.g. from tungsten bulb or sunlight)
•Continuous signal at 38 kHz or at any other
frequency
•Signals from fluorescent lamps with electronic
ballast with low modulation
(see Figure A or Figure B).
0 5 10 15 20
time [ms]
Figure A: IR Signal from Fluorescent Lamp with low Modulation
0 5 10 15 20
time [ s ]
Figure B: IR Signal from Fluorescent Lamp with high Modulation
TSOP22..KU1
Vishay Semiconductors
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4 (7) Rev . 1, 19–Nov–01
Document Number 82172
Typical Characteristics (Tamb = 25C, unless otherwise specified)
0.7 0.8 0.9 1.0 1.1
E / E – Rel. Responsitivity
e min
f/f0 – Relative Frequency
1.3
94 8143
0.0
0.2
0.4
0.6
0.8
1.0
e
1.2
f = f05%
f ( 3dB ) = f0/10
Figure 1. Frequency Dependence of Responsivity
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.1 1.0 10.0 100.0 1000.0 10000.0
Ee – Irradiance ( mW/m2 )96 12110
po
t – Output Pulse Length (ms)
Input burst duration
= 950 nm,
optical test signal, fig.7
Figure 2. Sensitivity in Dark Ambient
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0.01 0.10 1.00 10.00 100.00
E – DC Irradiance (W/m2)96 12111
e min
E – Threshold Irradiance (mW/m )
2
Correlation with ambient light sources
(Disturbanceeffect):10W/m21.4klx
(Stand.illum.A,T=2855K)8.2klx
(Daylight,T=5900K)
Ambient, = 950 nm
Figure 3. Sensitivity in Bright Ambient
0.0 0.4 0.8 1.2 1.6
0.0
0.4
0.8
1.2
2.0
E – Field Strength of Disturbance ( kV/m )
2.0
94 8147
1.6
E – Threshold Irradiance ( mW/m )
e min 2
f(E)=f0
Figure 4. Sensitivity vs. Electric Field Disturbances
0.01 0.1 1 10 100
0.1
1
10
1000
94 9106 VsRMS – AC Voltage on DC Supply Voltage (mV)
E – Threshold Irradiance ( mW/m )
e min 2
f = f0
10 kHz
100 Hz
1 kHz
Figure 5. Sensitivity vs. Supply Voltage Disturbances
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
–30–150 153045607590
Tamb – Ambient Temperature ( °C )96 12112
e min
E – Threshold Irradiance (mW/m )
2
Sensitivity in dark ambient
Figure 6. Sensitivity vs. Ambient Temperature
TSOP22..KU1
Vishay Semiconductors
5 (7)
www.vishay.comDocument Number 82172
Rev . 1, 19–Nov–01
Ee
T
tpi *
t
* tpi 10/fo is recommended for optimal function
VO
VOH
VOL t
16110
Optical Test Signal
(IR diode TSAL6200, IF = 0.4 A, 30 pulses, f = f0, T = 10 ms)
Output Signal
td1 )tpo2 )
1 ) 7/f0 < td < 15/f0
2 ) tpo = tpi 6/f0
Figure 7. Output Function
Ee
t
VO
VOH
VOL t
600 s 600 s
T = 60 ms
Ton Toff
94 8134
Optical Test Signal
Output Signal, ( see Fig.10 )
Figure 8. Output Function
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
10 20 30 40 50 60 70 80 90
Burstlength [number of cycles/burst]16156
Envelope Duty Cycle
f = 38 kHz
Figure 9. Max. Envelope Duty Cycle vs. Burstlength
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.1 1.0 10.0 100.0 1000.0 10000.0
Ee – Irradiance (mW/m2)96 12114
on off
T ,T – Output Pulse Length (ms)
Ton
= 950 nm,
optical test signal, fig.8
Toff
Figure 10. Output Pulse Diagram
750 850 950 1050
0
0.2
0.4
0.6
0.8
1.2
S ( ) – Relative Spectral Sensitivity
rel
– Wavelength ( nm )
1150
94 8408
1.0
Figure 11. Relative Spectral Sensitivity vs. Wavelength
96 12223p2
0.4 0.2 0 0.2 0.4 0.6
0.6
0.9
0°30°
10°20°
40°
50°
60°
70°
80°
1.0
0.8
0.7
drel – Relative Transmission Distance
Figure 12. Directivity
TSOP22..KU1
Vishay Semiconductors
www.vishay.com
6 (7) Rev . 1, 19–Nov–01
Document Number 82172
Dimensions in mm
16586
TSOP22..KU1
Vishay Semiconductors
7 (7)
www.vishay.comDocument Number 82172
Rev . 1, 19–Nov–01
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone
depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their
use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substanc es.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs
listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances
and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
