1/5
TARGET DATA
June, 24 2002
PD55003-01
RF POWER TRANSISTORS
The Ldm oST
Plastic FAMILY
N-CHANNEL ENHA NCEMENT-MODE LATERA L
MOSFETs
•EXCELLENT THERMAL STABILITY
•COMMON SOURCE CONFIGURATION
•POUT = 3 W with 17 dB gain @ 500 MHz / 12.5 V
•NEW LEADLESS PLASTIC PACKAGE
DESCRIPTION
The PD55003-01 is a common source N- Channel,
enhancement -mode lateral Field-Eff ect RF power
transistor. It is des igned for hi gh gain, broadb and
commercial and industrial applications. It operates
at 12 V in c ommon source mode at f requencies of
up to 1 GHz. PD55003-01 boasts the excellent
gain, linearity and reliability of S T’s latest LDM OS
technology mounted in the innovative leadless
SMD plastic p ackage, PowerFLAT ™ .
PD55003-01’s superior linearity performance
makes it an ideal solution for car mobi le radio.
ORDER CODE
PD55003-01 BRANDING
PD55003-01
PowerFLAT™(5x5)
ABSOLUTE MAXIMUM RATINGS (TCASE = 25 °C)
Symbol Parameter Value Unit
V(BR)DSS Drain-Source Voltage 40 V
VGS Gate-Source Voltage ± 20 V
IDDrain Current 2.5 A
PDISS Power Dissipation (@ Tc = 70°C) TBD W
Tj Max. Operating Junction Temperature 150 °C
TSTG Storage Temperature -65 to +150 °C
THE RMAL DA TA
Rth(j-c) Junction -Case Thermal Resistance TBD °C/W
PD55003-01
2/5
ELECTRICAL SPECIFICATION (TCASE = 2 5 °C)
ST ATIC
DYNAMIC
Symbo l Test Conditions Min. Ty p. Max. Unit
IDSS VGS = 0 V VDS = 28 V 1µA
IGSS VGS = 20 V VDS = 0 V 1µA
VGS(Q) VDS = 10 V ID = 50 mA 2.0 5.0 V
VDS(ON) VGS = 10 V ID = 0.5 A 0.36 V
gFS VDS = 10 V ID = 1 A 1.0 mho
CISS VGS = 0 V VDS = 12.5 V f = 1 MHz 33.9 pF
COSS VGS = 0 V VDS = 12.5 V f = 1 MHz 22.7 pF
CRSS VGS = 0 V VDS = 12.5 V f = 1 MHz 2.46 pF
Symbol Test Conditions Min. Typ. Max. Unit
P1dB VDD = 12.5 V IDQ = 50 mA f = 500 MHz 3W
G
P
V
DD = 12.5 V IDQ = 50 mA POUT = 3 W f = 500 MHz 14 17 dB
ηDVDD = 12.5 V IDQ = 50 mA POUT = 3 W f = 500 MHz 45 52 %
Load
mismatch VDD = 15.5 V IDQ = 50 mA POUT = 3 W f = 500 MHz
ALL PHASE ANGLES 20:1 VSWR
PIN CONNECTION
TOP VIEW
Ty pi cal Input
Impedance Typical Drain
Load Im pedance
G
D
S
ZDL
Zin
SC13140
FREQ. MHz ZIN (Ω)Z
DL(Ω)
480 TBD TBD
500 TBD TBD
520 TBD TBD
860 TBD TBD
IMPEDANCE DATA
3/5
PD55003-01
Return Loss vs. Output Power
-30
-25
-20
-15
-10
-5
0
0123456
Pout (W)
RL (dB)
500 MHz
480 MHz
520 MHz
Vdd = 12 .5 V
Id = 50 mA
Efficiency vs. Output Power
0
10
20
30
40
50
60
70
0123456
Pout (W)
η
d (%)
480 MHz
520 MHz
500 MHz
Vd d = 1 2.5 V
Id = 5 0 m A
Power Gain vs. Output Power
4
6
8
10
12
14
16
18
20
0123456
Pout (W)
Gp (dB)
480 MHz
500 MHz
520 MHz
Vdd = 12. 5 V
Id = 50 m A
Output Power vs. Input Power
0
1
2
3
4
5
6
7
0 100 200 300 400 500
Pin (mW)
Pout (W)
480 MHz
500 MHz 520 MHz
Vd d = 12 .5 V
Id = 50 m A
TYPIC AL PERFO RMANCE
(BRO ADBAND DATA)
PD55003-01
4/5
mm Inch
MIN. TYP. MAX MIN. TYP. MAX
A 0.90 1.00 0.035 0.039
A1 0.02 0.05 0.001 0.002
A3 0.24 0.009
b 0.43 0.51 0.58 0.017 0.020 0.023
c 0.64 0.71 0.79 0.025 0.028 0.031
D 5.00 0.197
E 5.00 0.197
E2 2.49 2.57 2.64 0.098 0.101 0.104
e 1.27 0.050
DIM.
PowerFLAT™ MECHANICAL DATA
Ref . 7359038A
5/5
PD55003-01
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by i m pl i cation or oth erwise under any pat ent or paten t rights of STMi croelectron i cs. Specificat i ons me nt i oned in this publicat ion are subject
to change without notice. This publication supersedes and replaces all information previously s upplied. STMicroelectronics products are not
authorized for u se a s c ri t i cal comp onents in l i f e support device s or systems without exp ress writ t en approval of STM i croelectronics.
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