JEDEC ABRUPT JUNCTION VARACTOR DIODES High Q and High Tuning Ratio ELECTRICAL SPECIFICATIONS: Ta=25C * Guaranteed Tuning Ratio and Temperature Coefficient Superior Reproducibility * High Reliability (state-of-the-art passivation plus hermetic packaging) JEDEC REGISTERED 1N5139 A through 1N5148 A 1N5441 A, B, C through 1N5456 A, B, C 1N5461 A, B, C through 1N5476 A, B, C DO-7 Glass Package REVERSE BREAKDOWN In=10nAdc Vr=55Vdc, Ta=25C Vr=55Vde, REVERSE LEAKAGE CURRENT (Ir) SERIES =250MHz, L=1/16" CASE f=1MHz, L=1/16" DIODE CAPACITANCE TEMP | Va=4dc, f=1MHz DEVICE DISSIPATION OPERATING JUNCTION TEMP +175 c STORAGE TEMP -65 TO +200 C Substitute suffix B for +5%Cr, suffix C for +2%Crt, **Indicates JEDEC registered data narda SEMICONDUCTOR OPERATION microwave-east 75 Technology Drive Lowell, MA01851 Tel: 508-442-5600 * Fax: 508-937-3748 PaO ideal oy Tuning Varactors _ JEDEC ABRUPT JUNCTION VARACTOR DIODES ELECTRICAL SPECIFICATIONS: Ta=25C Cr** O, FIGURE Q, FIGURE DIODE CAPACITANCE] MODEL | OF MERIT | Ta TUNINGRATIO. | MODEL | OF MERIT | Ta TUNING RATIO (pF) NUMBER | Va=4dc, | C2/C20,f=IMHz | NUMBER | VR=4dc, | C2 / Cao, f=1MHz +10% =50 MHz | MIN**/ TYP./ MAX** f=50 MHz | MIN**/ TYP / MAX** | @ Va=4de, f=1MHz MIN MIN 6.8 1N5441A 450 2.5/3.0/3.1 1N5461A 600 2.7/3.0/3.1 8.2 1N5442A 450 2.5 /3.0/3.1 1N5462A 600 2.8/ 3.0/3.1 10 4N5443A 400 2.6/3.0/3.1 1N5463A 550 2.8/ 3.0/3.1 12. 1N5444A 400 2.6/3.0/3.1 1N5464A 550. 2.8/ 3.0/3.1 15 1N5445A 400 | -2.6/3.0/3.1 1N5465A 550 2.8/3.0/3.1 _| i 18 1N5446A 350 2.6/3.0/3.1 1N5466A 500 2.9/ 3.0/3.1 [20 1N5447A 350 2.6/3.0/3.1 1N5467A 500 2.9/ 3.0/3.1 22 1N5448A 350 2.6/3.1/3.2 1N5468A 500 2.9/ 3.1/3.2 2? 1N5449A 350 2.6/3.1/3.2 1N5469A 500 2.9/ 3.1/3.2 | 1N5450A 350. 2.6/ 3.1/3.2 1N5470A 500 2.9/3.1/3.2 39 1N5451A 300 2.6/3.1/3.2 1N5471A 450 2.9/3.1/3.2 47 1N5452A | _ 250 2.6/3.1/3.2 1N5472A | _400 2.9/3.1/3.2 56 1N5453A_ 200 2.6/3.2/33 1N5473A_| 300 2.9/3.2/3.3 68 1N5454A 175 2.7/3.2/3.3 1N5474A 250 2.9/ 3.2/3.3 | 82 1N5455A 175 2.7/3.2/3.3 1N5475A 225 2.9/3.2/3.3 100 IN5456A 175 27/32/33 41N5476A 200 2.9/3.2/3.3 PARAMETER TEST CONDITIONS | UNIT| MIN | TYP | MAX] TEST CONDITIONS | UNIT MIN | TYP / MAX ee #. ae REVERSE BREAKDOWN IR=10nAde Vde | 30 | IR=10mAdc Vde | 30 | | VOLTAGE (Vaa) . REVERSE LEAKAGE |VR=26Vde, TaA=28C | ng) | a2 [YR=25Vde, Ta=26C | age | 0.02 CURRENT {ig) Vr=25Vdc, _ _ 20 Vr=25Vde, _ 20 6 R Ta=150C Ta= 150C SERIES f=250MHz,L=1/16" | nH | | 4 | 10 | f=250MHz,L=1/16" | nH | ~ | 4 | 10 INDUCTANCE (Ls) be ; ' : | CAPACITANCE. Coy | f= IMHzL=116" | pF | 0.1 | 0.17) 0.25] f=1MHz,L=1/16" | pF | 0.1 | 0.17 0.25 DIODE CAPACITANCE TEMP | VR=4de, f=1MHz rl | 300 | 400 | VR=4dce, F=1MHz | 300 | 400 COEFFICIENT (TCc) MAXIMUM RATINGS PARAMETER VALUE UNIT VALUE UNIT /REVERSE VOLTAGE |. 30 __Vde 30 Vde DEVICE DISSIPATION 400 mw 400 mW | @TA=25C a . | DERATE ABOVE 25C 2.67 mw/?c 2.67 mWw/ec OPERATING JUNCTION TEMP +175 C +175 C |RANGE 7 _ - eae TEMP 6510 +200 C -65 TO +200 C Substitute suffix B for +5%Cr, suffix C for +2%Cr, suffix D" for +1% CL Delete suffix for +20% tolerance. SEMICONDUCTOR OPERATION 75 Technology Drive + Lowell, MA 01851 Tel: 508-442-5600 * Fax: 508-937-3748 24 **Indicates JEDEC registered data narda microwave-east an ) communications company