R07DS0225EJ0400 Rev.4.00 Page 1 of 8
Dec 14, 2010
Preliminary Datasheet
BCR12CS-12LB
Triac
Medium Power Use
Features
IT (RMS) : 12 A
VDRM : 600 V
IFGTI, IRGTI, IRGT III : 30 mA (20 mA)Note6
The product gua rant ee d maximum juncti on
temperature of 150°C
Non-Insulated Type
Planar Passivation Type
Outline
2, 4
13
1. T
1
Terminal
2. T
2
Terminal
3. Gate Terminal
4. T
2
Terminal
123
RENESAS Package code: PRSS0004AB-A
(Package name: TO-220S
EOL
OL P
OL P
OL P
OL PKG
44
LP
OL P
L
L
OL P
L
L
OL P
: P
: P
220S) 220S)
123
4
RENESAS Package code:
PRSS0004AE-B
(Package name:
LDPAK(S)-(1) )
Applications
Contactless AC switch, light dimmer, electronic flasher unit, control of household equipment such as TV sets, stereo
systems, refrigerator, washing machine, infrared kotatsu, carpet, electric fan, solenoid driver, small motor con trol, solid
state relay, copying machine, electric tool, electric heater control, and other general purpose control applications
Maximum Ratings
Voltage class
Parameter Symbol
12 Unit
Repetitive peak off-state voltageNote1 V
DRM 600 V
Non-repetitive peak off-state voltageNote1 V
DSM 720 V
Parameter Symbol Ratings Unit Conditions
RMS on-state current IT (RMS) 12 A
Commercial frequency, sine full wave
360° conduction, Tc = 123CNote3
Surge on-state current ITSM 120 A
60Hz sinewave 1 full cycle, peak value,
non-repetitive
I2t for fusing I2t 60 A2s Value corresponding to 1 cycl e of half
wave 60Hz, surge on-state current
Peak gate power dissipation PGM 5 W
Average gate power dissipation PG (AV) 0.5 W
Peak gate voltage VGM 10 V
Peak gate current IGM 2 A
Junction temperature Tj – 40 to +150 C
Storage temperature Tstg – 40 to +150 C
Mass — 1.3 g Typical value
Notes: 1. Gate open.
R07DS0225EJ0400
(Previous: REJ03G0470-0300)
Rev.4.00
Dec 14, 2010
BCR12CS-12LB Preliminary
R07DS0225EJ0400 Rev.4.00 Page 2 of 8
Dec 14, 2010
Electrical Characteristics
Parameter Symbol Min. Typ. Max. Unit Test conditions
Repetitive peak off-state current IDRM — — 2.0 mA Tj = 150C, VDRM applied
On-state voltage VTM — — 1.6 V
Tc = 25C, ITM = 20 A,
Instantaneous measurement
V
FGT — — 1.5 V
V
RGT — — 1.5 V
Gate trigger voltageNote2
V
RGT — — 1.5 V
Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330
I
FGT — — 30Note6 mA
I
RGT — — 30Note6 mA
Gate trigger currentNote2
I
RGT — — 30Note6 mA
Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330
Gate non-trigger voltage VGD 0.2/0.1 — — V Tj = 125C/150C, VD = 1/2 VDRM
Thermal resistance Rth (j-c) — — 1.8 C/W Junction to caseNote3 Note4
Critical-rate of rise of off-state
commutating voltageNote5 (dv/dt)c 10/1 — — V/s Tj = 125C/150C
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. Case temperature is measure d on the T2 tab.
4. The contact thermal resistance Rth (c-f) in case of greasing is 1.0°C/W.
5. Test conditions of the critical-rate of rise of off-state commutating voltage is sho wn in the table bel ow.
6. High sensitivity (IGT 20 mA) is also available. (IGT item: 1)
Test conditions Commutating voltage and current waveforms
(inductive load)
1. Junction temperature
Tj = 125C/150C
2. Rate of decay of on-state commutating current
(di/dt)c = – 6.0 A/ms
3. Peak off-state voltage
VD = 400 V
Supply Voltage
Time
Time
Time
Main Current
Main Voltage
(di/dt)c
V
D
(dv/dt)c
BCR12CS-12LB Preliminary
R07DS0225EJ0400 Rev.4.00 Page 3 of 8
Dec 14, 2010
Performance Curves
Maximum On-State Characteristics
On-State Voltage (V)
On-State Current (A)
Rated Surge On-State Current
Conduction Time (Cycles at 60Hz)
Surge On-State Current (A)
Gate Characteristics (I, II and III)
Gate Current (mA)
Gate Voltage (V)
Gate Trigger Voltage vs.
Junction Temperature
Junction Temperature (°C)
Gate Trigger Voltage (Tj = t°C)
Gate Trigger Voltage (Tj = 25°C)× 100 (%)
Gate Trigger Current vs.
Junction Temperature
Junction Temperature (°C)
Gate Trigger Current (Tj = t°C)
Gate Trigger Current (Tj = 25°C)× 100 (%)
Conduction Time (Cycles at 60Hz)
Transient Thermal Impedance (°C/W)
10
0
2510
1
80
40
37 10
2
425374
120
160
200
60
20
100
140
180
0
0.5 1.5 2.5 3.51.0 2 3.0 4.0
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
10
1
10
3
7
5
3
2
10
2
7
5
3
2
4
4
10
1
10
3
7
5
3
2
10
2
7
5
3
2
4
4
2.2
2.4
0
2.0
1.8
1.6
1.4
1.2
0.6
0.4
0.2
0.8
2310
–1
5710
0
23 5710
1
23 5710
2
2310
2
5710
3
1.0
2
10
0
2310
1
5710
2
23 5710
3
23 5710
4
5
3
2
10
1
7
5
3
2
7
5
3
2
10
–1
–60 –20 20 60 100 140–40 0 40 80 120 160
–20–60 20 60 100 140–40 0 40 80 120 160
Tj = 25°C
Tj = 150°C
Typical Example
IRGT I, IRGT III
IFGT I
VGM = 10V
PGM = 5W
IGM = 2A
VGT = 1.5V
PG(AV) =
0.5W
IFGT I, IRGT III
IRGT I VGD = 0.1V
Typical Example
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
BCR12CS-12LB Preliminary
R07DS0225EJ0400 Rev.4.00 Page 4 of 8
Dec 14, 2010
On-State Power Dissipation (W)
RMS On-State Current (A)
Maximum On-State Power Dissipation
RMS On-State Current (A)
Case Temperature (°C)
Allowable Case Temperature vs.
RMS On-State Current
RMS On-State Current (A)
Ambient Temperature (°C)
Allowable Ambient Temperature vs.
RMS On-State Current
Junction Temperature (°C)
Repetitive Peak Off-State Current (Tj = t°C)
Repetitive Peak Off-State Current (Tj = 25°C)× 100 (%)
Repetitive Peak Off-State Current vs.
Junction Temperature Holding Current vs.
Junction Temperature
Junction Temperature (°C)
Holding Current (Tj = t°C)
Holding Current (Tj = 25°C)× 100 (%)
RMS On-State Current (A)
Ambient Temperature (°C)
Allowable Ambient Temperature vs.
RMS On-State Current
32
24
20
12
4
016820 4 6 10 12 14
8
16
28
160
120
100
60
20
016820 4 6 10 12 14
40
80
140
160
120
100
60
20
04.02.00 1.0 1.5 2.5 3.0 3.5
40
80
140
0.5
160
120
100
60
20
016820 4 6 10 12 14
40
80
140
10
5
7
5
3
2
10
4
7
5
3
2
10
3
7
5
3
2
10
2
–60 –20 20 60 100 140–40 0 40 80 120 160
10
3
7
5
3
2
10
2
7
5
3
2
4
4
10
1
–60 –20 20 60 100 140–40 0 40 80 120 160
360° Conduction
Resistive,
inductive loads
Curves apply regardless
of conduction angle
360° Conduction
Resistive,
inductive loads
All fins are black painted
aluminum and greased
120 × 120 × t2.3
100 × 100 × t2.3
60 × 60 × t2.3
Curves apply
regardless of
conduction angle
Resistive,
inductive loads
Natural convection
Typical Example Typical Example
Natural convection
No fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
BCR12CS-12LB Preliminary
R07DS0225EJ0400 Rev.4.00 Page 5 of 8
Dec 14, 2010
Rate of Rise of Off-State Voltage (V/μs)
Breakover Voltage (dv/dt = xV/μs)
Breakover Voltage (dv/dt = 1V/μs) × 100 (%)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=125°C)
Rate of Rise of Off-State Voltage (V/μs)
Breakover Voltage (dv/dt = xV/μs)
Breakover Voltage (dv/dt = 1V/μs) × 100 (%)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=150°C)
Breakover Voltage vs.
Junction Temperature
Junction Temperature (°C)
Breakover Voltage (Tj = t°C)
Breakover Voltage (Tj = 25°C)× 100 (%)
Commutation Characteristics (Tj=125°C)
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
Rate of Decay of On-State
Commutating Current (A/ms)
Commutation Characteristics (Tj=150°C)
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
Rate of Decay of On-State
Commutating Current (A/ms)
Latching Current (mA)
Latching Current vs.
Junction Temperature
Junction Temperature (°C)
160–400 4080120
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
160
100
80
40
20
0
140
60
120
–60 –20 20 60 100 140–400 40 80 120 160
2310
1
5710
2
23 5710
3
23 5710
4
120
0
20
40
60
80
100
140
160
2310
1
5710
2
23 5710
3
23 5710
4
120
0
20
40
60
80
100
140
160
10
2
2310
0
5710
1
23 5710
2
7
5
10
1
7
3
2
7
5
10
0
3
2
10
2
2310
0
5710
1
23 5710
2
7
5
10
1
7
3
2
7
5
10
0
3
2
Distribution T2+, G–
Typical Example
T2+, G+
T2–, G–Typical Example
Typical Example
Typical Example
Tj = 125°C
III Quadrant
I Quadrant
Typical Example
Tj = 150°C
III Quadrant
I Quadrant
Typical Example
Tj = 125°C
IT = 4A
τ = 500μs
VD = 200V
f = 3Hz
Minimum
Characteristics
Value
III Quadrant
I Quadrant
Main Voltage
Main CurrentI
T
(di/dt)c
τ
V
D
Time
Time
(dv/dt)c
Typical Example
Tj = 150°C
IT = 4A
τ = 500μs
VD = 200V
f = 3Hz
Main Voltage
Main CurrentI
T
(di/dt)c
τ
V
D
Time
Time
(dv/dt)c
I Quadrant
III Quadrant
Minimum
Characteristics
Value
BCR12CS-12LB Preliminary
R07DS0225EJ0400 Rev.4.00 Page 6 of 8
Dec 14, 2010
C1 = 0.1 to 0.47μF
R1 = 47 to 100Ω
C0 = 0.1μF
R0 = 100Ω
Gate Trigger Characteristics Test Circuits Recommended Circuit Values Around The Triac
Test Procedure I
Test Procedure III
Test Procedure II
Gate Trigger Current (tw)
Gate Trigger Current (DC)× 100 (%)
Gate Current Pulse Width (μs)
Gate Trigger Current vs.
Gate Current Pulse Width
10
1
10
3
7
5
3
2
10
0
23 5710
1
10
2
7
5
3
2
23 5710
2
4
4
44
C
1
C
0
R
0
R
1
6Ω6Ω
6Ω
6V6V
6V
330Ω330Ω
330Ω
A
V
A
V
A
V
Typical Example
I
FGT I
I
RGT I
I
RGT III
Load
BCR12CS-12LB Preliminary
R07DS0225EJ0400 Rev.4.00 Page 7 of 8
Dec 14, 2010
Package Dimensions
10.2 ± 0.3
1.37 ± 0.2
(1.5)
(1.4)
8.6 ± 0.3
10.0
+ 0.3
– 0.5
4.44 ± 0.2
1.3 ± 0.15
0.1
+ 0.2
– 0.1
0.4 ± 0.1
2.49 ± 0.2
0.86
+ 0.2
– 0.1
2.54 ± 0.5
2.54 ± 0.5
1.3 ± 0.2
3.0
+ 0.3
– 0.5
(1.5)
7.8
6.6
2.2
1.7
7.8
7.0
SC-83 1.30g
MASS[Typ.]
LDPAK(S)-(1) / LDPAK(S)-(1)V
PRSS0004AE-B
RENESAS CodeJEITA Package Code Previous Code
Unit: mm
Package Name
LDPAK(S)-(1)
S
C-8
3
1.2g
M
ASS[Typ.
]
TO-220
S
P
RSS0004AB-A
RENESAS CodeJEITA Package Code
P
revious Code
Unit: mm
10.5Max
1.5Max
0.8 0.5
4.5
2.6 ± 0 . 4
4.5
(1.5)
0
+0.3
–0
3.0
+0.3
–0.5
P
ac
k
a
g
e
N
ame
TO-220S
EOL P
OL
OL
O
O
O
L
L
L
OL
OL
OL
OL
L
L
L PKG
K
PK
K
K
K
K
K
P
OL
OL
OL
OL
OL
OL
L
L
L
L
L
L
OL
OL
L
L
OL
OL
OL
O
O
OL
O
O
O
O
O
O
P
P
L
P
P
P
LP
L
L
L
OL
L
L
L
P
K
PK
K
KG
K
PK
K
P
P
P
P
P
P
P
P
P
L
L
L
L
L
L
O
O
O
O
O
O
OL
OL
OL
O
O
O
OL
OL
OL
L
L
L
L
K
K
K
K
K
K
K
K
PK
PK
K
1
1.
5
Max
5
1
1.
31.3
4.5
8
.
6
±±
0
.
3 0.3
9
.
89.8
±±
0
.
5 0.5
BCR12CS-12LB Preliminary
R07DS0225EJ0400 Rev.4.00 Page 8 of 8
Dec 14, 2010
Ordering Information
Orderable Part Number Packing Quantity Remark
BCR12CS-12LB#B00 Tube 50 pcs. —
BCR12CS-12LB-T11#B00 Embossed Tape 1000 pcs. Taping direction “T1”
BCR12CS-12LB-T21#B00 Embossed Tape 1000 pcs. Taping direction “T2”
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