VOIDLESS-HERMETICALLY-SEALED
ULTRAFAST RECOVERY GLASS
RE
TIFIER
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
Copyright © 2007
7-26-2007
WWW.Microsemi .COM
SCOTTSDALE DIVISION
1N5807CB thru 1N5811CB
1N5807CB–1N5811CB
DESCRIPTION APPEARANCE
This “Ultrafast Recovery” rectifier diode serie s is militar y qualified to MIL-PRF-19500/7 42 and
is ideal for high-reliability applications where a failure cannot be tolerated. These industry-
recognized 6.0 Amp rated rectifiers for working peak reverse voltages from 50 to 150 volts
are hermetically sealed with voidless-glass construction using an internal “Category III”
metallurgical bond. These devices are also available in surface mount MELF package
configurations by adding a “US” suffix (see separate data sheet for 1N5807CBUS thru
1N5811CBUS). Microsemi also offers numerous other rectifier products to meet higher and
lower current ratings with various rec overy time speed requirements including stand ard, fast
and ultrafast device types in both through-hole and surface mount packages.
“E” Package
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES APPLIC ATIONS / BENEFITS
• Popular JEDEC registered 1N5807 to 1N5811 series
• Voidless hermetically s ealed glass package
• Extremely robust construction
• Triple-layer passivation
• Internal “Category III” Metallurgical bonds
• JAN, JANTX, & JANTXV available per MIL-PRF-19500/742
• Further screening options are available for JANS in
accordance with MIL-PRF-19500/742 by using a “SP” prefix
• Surface mount equivalents also avai lable in a square end-
cap MELF configuration with “US” suffix (see separate data
sheet for 1N5807CBUS thru 1N5811CBUS)
• Ultrafast recovery 6 Amp rectifier series 50 to 150 V
• Military and other high-reliability applications
• Switching power supplies or other applications
requiring extremely fast switching & low forward
loss
• High forward surge current capability
• Low thermal resistance
• Controlled avalanche with peak reverse power
capability
• Inherently radiation hard as described in Micr osemi
MicroNote 050
MAXIMUM RAT ING S MECHANICAL AND PACKAGING
• Junction Temperature: -65oC to +175oC
• Storage Temperature: -65oC to +175oC
• Average Rectified For ward Current (IO): 6 A @ TL = 75ºC
at 3/8 inch lead length (see note 1)
• Thermal Resistance: 22 ºC/W junctio n to lea d (L= .375 in)
• Thermal Impedance: 1.5 ºC/W @ 10 ms heating time
• Forward Surge Current (8.3 ms half sine) 125 Amps
• Capacitance: 60 pF at 10 volts, f = 1 MHz
• Solder temperature: 260ºC for 10 s (maximum)
• CASE: Hermetically sealed voidless hard glass with
Tungsten slugs
• TERMINATIONS: Axial-le ads are Tin/Lead (Sn/Pb)
over Copper.
• MARKING: Body painted and part number, etc.
• POLARITY: Cathode indicated by band
• Tape & Reel option: Standard per EIA-296
• Weight: 750 mg
• See package dimensions on l ast page
ELECTRICAL CHARACTERISTICS
TYPE
WORKING
PEAK
REVERSE
VOLTAGE
VRWM
BREAKDOWN
VOLTAGE
(MIN.)
@ 100μA
VBR
AVERAGE
RECTIFIED
CURRENT
IO1
@TL=75ºC
(Note 1)
AVERAGE
RECTIFIED
CURRENT
IO2
@TA=55ºC
Note 2
MAXIMUM
FORWARD
VOLTAGE
@ 4 A
(8.3 ms pulse)
VF
REVERSE
CURRENT
(MAX)
@ VRWM
IR
SURGE
CURRENT
(MAX)
IFSM
(NOTE 3)
REVERSE
RECOVERY
TIME (MAX)
(NOTE 4)
trr
VOLTS VOLTS AMPS VOLTS μA AMPS ns
25oC 100oC 25oC 125oC
1N5807CB
1N5809CB
1N5811CB
50
100
150
60
110
160
6.0
6.0
6.0
3.0
3.0
3.0
0.875
0.875
0.875
0.800
0.800
0.800
5
5
5
525
525
525
125
125
125
30
30
30
NOTE 1: Rated at TL = 75ºC at 3/8 inch lead length. Derate at 60 mA/ºC for TL above 75ºC.
NOTE 2: Derate linearly at 25 mA/ºC above TA = 55ºC. This rating is typical for PC boards where thermal resistance from mounting point to
ambient is sufficiently controlled where TJ(max) does not exceed 175ºC
NOTE 3: TA = 25oC @ IO = 3.0 A and VRWM for ten 8.3 ms surges at 1 minute intervals
NOTE 4: IF = 1.0 A, IRM = 1.0 A, IR(REC) = 0.10 A and di/dt = 100 A/µs min