TECHNICAL DATA SHEET
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N-CHANNEL MOSFET
Qualified per MIL-PRF-19500/556
T4-LDS-0176 Rev. 1 (101183) Page 1 of 4
DEVICES LEVELS
2N6784 2N6784U JAN
JANTX
JANTXV
ABSOLUTE MAXIMUM RATI NG S (T C = +25°C unless otherwise noted)
TO-205AF
(formerly TO-39)
U – 18 LCC
Parameters / Test Conditions Symbol Value Unit
Drain – Source Voltage VDS 200 Vdc
Gate – Source Voltage VGS ± 20 Vdc
Continuous Drain Current
T
C = +25°C ID1 2.25 Adc
Continuous Drain Current
T
C = +100°C ID2 1.5 Adc
Max. Power Dissipation Ptl 15
(1) W
Drain to Source On State Resistance Rds(on) 1.5
(2) Ω
Operating & Storage Temperature Top, Tstg -55 to +150 °C
Note: (1) Derated Linearly by 0.12 W/°C for TC > +25°C
(2) VGS = 10Vdc, ID = 1.5A
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions Symbol Min. Max. Unit
Drain-Source Breakdown Voltage
VGS = 0V, ID = 1mAdc V(BR)DSS 200 Vdc
Gate-Source Voltage (Threshold)
VDS ≥ VGS, ID = 0.25mA
VDS ≥ VGS, ID = 0.25mA, Tj = +125°C
VDS ≥ VGS, ID = 0.25mA, Tj = -55°C
VGS(th)1
VGS(th)2
VGS(th)3
2.0
1.0
4.0
5.0
Vdc
Gate Current
VGS = ±20V, VDS = 0V
VGS = ±20V, VDS = 0V, Tj = +125°C
IGSS1
IGSS2
±100
±200
nAdc
Drain Current
VGS = 0V, VDS = 160V
VGS = 0V, VDS = 160V, Tj = +125°C
IDSS1
IDSS2
25
0.25
µAdc
mAdc
Static Drain-Source On-State Resistance
VGS = 10V, ID = 1.5A pulsed
VGS = 10V, ID = 2.25A pulsed
Tj = +125°C
VGS = 10V, ID = 1.5A pulsed
rDS(on)1
rDS(on)2
rDS(on)3
1.5
1.6
2.81
Ω
Ω
Ω
Diode Forward Voltage
VGS = 0V, ID = 2.25A pulsed VSD 1.5 Vdc