PBSS4160DS - Philips Semiconductors / NXP Semiconductors

1. Product proﬁle

1.1 General description

NPN/NPN low VCEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457

(SC-74) Surface Mounted Device (SMD) plastic package.

PNP complement: PBSS5160DS.

1.2 Features

■Low collector-emitter saturation voltage VCEsat

■High collector current capability: IC and ICM

■High collector current gain (hFE) at high IC

■High efﬁciency due to less heat generation

■Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

1.3 Applications

■Dual low power switches (e.g. motors, fans)

■Automotive applications

1.4 Quick reference data

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.

[2] Pulse test: tp≤ 300 µs; δ≤ 0.02.

PBSS4160DS

60 V, 1 A NPN/NPN low VCEsat (BISS) transistor

Rev. 02 — 27 June 2005 Product data sheet

Table 1: Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VCEO collector-emitter voltage open base - - 60 V

ICcollector current (DC) [1] --1A

ICM peak collector current single pulse; tp≤1ms--2A

RCEsat collector-emitter saturation

resistance IC= 1 A; IB= 100 mA [2] - 200 250 mΩ

Product data sheet Rev. 02 — 27 June 2005 2 of 14

Philips Semiconductors PBSS4160DS

60 V, 1 A NPN/NPN low VCEsat (BISS) transistor

2. Pinning information

3. Ordering information

4. Marking

5. Limiting values

Table 2: Pinning

Pin Description Simpliﬁed outline Symbol

1 emitter TR1

2 base TR 1

3 collector TR2

4 emitter TR2

5 base TR2

6 collector TR1

132

sym020

TR1 TR2

Table 3: Ordering information

Type number Package

Name Description Version

PBSS4160DS SC-74 plastic surface mounted package; 6 leads SOT457

Table 4: Marking codes

Type number Marking code

PBSS4160DS B8

Table 5: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Per transistor

VCBO collector-base voltage open emitter - 80 V

VCEO collector-emitter voltage open base - 60 V

VEBO emitter-base voltage open collector - 5 V

ICcollector current (DC) [1] - 870 mA

[2] -1A

[3] -1A

ICM peak collector current single pulse; tp≤1ms - 2 A

IBbase current (DC) - 300 mA

IBM peak base current single pulse; tp≤1ms - 1 A

Ptot total power dissipation Tamb ≤ 25 °C[1] - 290 mW

[2] - 370 mW

[3] - 450 W

Product data sheet Rev. 02 — 27 June 2005 3 of 14

Philips Semiconductors PBSS4160DS

60 V, 1 A NPN/NPN low VCEsat (BISS) transistor

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.

[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.

Per device

Ptot total power dissipation Tamb ≤ 25 °C[1] - 420 mW

[2] - 560 mW

[3] - 700 W

Tjjunction temperature - 150 °C

Tamb ambient temperature −65 +150 °C

Tstg storage temperature −65 +150 °C

(1) Ceramic PCB, Al2O3, standard footprint

(2) FR4 PCB, mounting pad for collector 1 cm2

(3) FR4 PCB, standard footprint

Fig 1. Power derating curves

Table 5: Limiting values

…continued

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

006aaa493

Tamb (°C)

0 16012040 80

0.4

0.2

0.6

0.8

Ptot

(W)

(3)

(2)

(1)

Product data sheet Rev. 02 — 27 June 2005 4 of 14

Philips Semiconductors PBSS4160DS

60 V, 1 A NPN/NPN low VCEsat (BISS) transistor

6. Thermal characteristics

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.

[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.

Table 6: Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-a) thermal resistance from

junction to ambient in free air [1] - - 431 K/W

[2] - - 338 K/W

[3] - - 278 K/W

Rth(j-sp) thermal resistance from

junction to solder point - - 105 K/W

FR4 PCB, standard footprint

Fig 2. Transient thermal impedance from junction to ambient as a function of pulse time; typical values

006aaa494

10−51010−2

10−4102

10−1tp (s)

10−3103

102

103

Zth(j-a)

(K/W)

0.10

0.05

0.02

0.01

δ = 1 0.75

0.50 0.33

0.20

Product data sheet Rev. 02 — 27 June 2005 5 of 14

Philips Semiconductors PBSS4160DS

60 V, 1 A NPN/NPN low VCEsat (BISS) transistor

FR4 PCB, mounting pad for collector 1 cm2

Fig 3. Transient thermal impedance from junction to ambient as a function of pulse time; typical values

Ceramic PCB, Al2O3, standard footprint

Fig 4. Transient thermal impedance from junction to ambient as a function of pulse time; typical values

006aaa495

10−51010−2

10−4102

10−1tp (s)

10−3103

102

103

Zth(j-a)

(K/W)

0.20

0.10

0.05

0.02

0.01

δ = 1 0.75

0.50 0.33

006aaa496

10−51010−2

10−4102

10−1tp (s)

10−3103

102

103

Zth(j-a)

(K/W)

0.20

0.10

0.05

0.02

0.01

δ = 1

0.75

0.50 0.33

Product data sheet Rev. 02 — 27 June 2005 6 of 14

Philips Semiconductors PBSS4160DS

60 V, 1 A NPN/NPN low VCEsat (BISS) transistor

7. Characteristics

[1] Pulse test: tp≤ 300 µs; δ≤ 0.02.

Table 7: Characteristics

amb

= 25

C unless otherwise speciﬁed.

Symbol Parameter Conditions Min Typ Max Unit

ICBO collector-base cut-off

current VCB =60V; I

E= 0 A - - 100 nA

VCB =60V; I

E=0A;

Tj= 150 °C--50µA

ICES collector-emitter cut-off

current VCE =60V; V

BE = 0 V - - 100 nA

IEBO emitter-base cut-off current VEB =5V; I

C= 0 A - - 100 nA

hFE DC current gain VCE =5V; I

C= 1 mA 250 500 -

VCE =5V; I

C= 500 mA [1] 200 420 -

VCE =5V; I

C=1A [1] 100 180 -

VCEsat collector-emitter saturation

voltage IC= 100 mA; IB= 1 mA - 90 110 mV

IC= 500 mA;

IB=50mA - 115 140 mV

IC= 1 A; IB= 100 mA [1] - 200 250 mV

RCEsat collector-emitter saturation

resistance IC= 1 A; IB= 100 mA [1] - 200 250 mΩ

VBEsat base-emitter saturation

voltage IC= 1 A; IB=50mA [1] - 0.95 1.1 V

VBEon base-emitter turn-on

voltage VCE =5V; I

C=1A [1] - 0.82 0.9 V

tddelay time IC= 0.5 A;

IBon =25mA;

IBoff =−25 mA

-11-ns

trrise time - 78 - ns

ton turn-on time - 90 - ns

tsstorage time - 340 - ns

tffall time - 160 - ns

toff turn-off time - 500 - ns

fTtransition frequency VCE =10V;

IC= 50 mA;

f = 100 MHz

150 220 - MHz

Cccollector capacitance VCB =10V;

IE=i

e= 0 A; f = 1 MHz - 5.5 10 pF

Product data sheet Rev. 02 — 27 June 2005 7 of 14

Philips Semiconductors PBSS4160DS

60 V, 1 A NPN/NPN low VCEsat (BISS) transistor

VCE =5V

(1) Tamb = 100 °C

(2) Tamb = 25 °C

(3) Tamb = −55 °C

VCE =5V

(1) Tamb = −55 °C

(2) Tamb = 25 °C

(3) Tamb = 100 °C

Fig 5. DC current gain as a function of collector

current; typical values Fig 6. Base-emitter voltage as a function of collector

current; typical values

IC/IB =20

(1) Tamb = 100 °C

(2) Tamb = 25 °C

(3) Tamb = −55 °C

Tamb = 25 °C

(1) IC/IB = 100

(2) IC/IB = 50

(3) IC/IB = 10

Fig 7. Collector-emitter saturation voltage as a

function of collector current; typical values Fig 8. Collector-emitter saturation voltage as a

function of collector current; typical values

006aaa505

IC (mA)

10−1104

103

110

400

200

600

800

hFE

(3)

(2)

(1)

006aaa506

0.6

0.8

0.4

1.0

1.2

VBE

(V)

0.2

IC (mA)

10−1104

103

110

(3)

(2)

(1)

006aaa513

IC (mA)

10−1104

103

110

10−1

VCEsat

(mV)

10−2

(3)

(2)

(1)

006aaa514

10−1

10−2

VCEsat

(V)

10−3

IC (mA)

10−1104

103

110

(3)

(2)

(1)

Product data sheet Rev. 02 — 27 June 2005 8 of 14

Philips Semiconductors PBSS4160DS

60 V, 1 A NPN/NPN low VCEsat (BISS) transistor

IC/IB =20

(1) Tamb = −55 °C

(2) Tamb = 25 °C

(3) Tamb = 100 °C

IC/IB =20

(1) Tamb = 100 °C

(2) Tamb = 25 °C

(3) Tamb = −55 °C

Fig 9. Base-emitter saturation voltage as a function of

collector current; typical values Fig 10. Collector-emitter saturation resistance as a

function of collector current; typical values

Tamb = 25 °CT

amb = 25 °C

(1) IC/IB = 100

(2) IC/IB = 50

(3) IC/IB = 10

Fig 11. Collector current as a function of

collector-emitter voltage; typical values Fig 12. Collector-emitter saturation resistance as a

function of collector current; typical values

006aaa509

0.6

0.8

0.4

1.0

1.2

VBEsat

(V)

0.2

IC (mA)

10−1104

103

110

(3)

(2)

(1)

006aaa515

IC (mA)

10−1104

103

110

102

103

RCEsat

(Ω)

10−1

(3)

(2)

(1)

006aaa511

VCE (V)

05312 4

0.8

1.2

0.4

1.6

2.0

(A)

IB (mA) = 65.0

13.0

6.5

58.5

52.0

26.0

39.0 45.5

32.5

19.5

006aaa516

IC (mA)

10−1104

103

110

102

103

RCEsat

(Ω)

10−1

(3)

(2)

(1)

Product data sheet Rev. 02 — 27 June 2005 9 of 14

Philips Semiconductors PBSS4160DS

60 V, 1 A NPN/NPN low VCEsat (BISS) transistor

8. Test information

Fig 13. BISS transistor switching time deﬁnition

IC= 0.5 A; IBon = 25 mA; IBoff =−25 mA; R1 = open; R2 = 100 Ω; RB = 300 Ω; RC = 20 Ω

Fig 14. Test circuit for switching times

006aaa003

IBon (100 %)

input pulse

(idealized waveform)

IBoff

90 %

10 %

IC (100 %)

tdton

90 %

10 %

output pulse

(idealized waveform)

toff

DUT

mlb826

RB(probe)

450 Ω

(probe)

450 Ω

oscilloscope oscilloscope

VBB

VCC

Product data sheet Rev. 02 — 27 June 2005 10 of 14

Philips Semiconductors PBSS4160DS

60 V, 1 A NPN/NPN low VCEsat (BISS) transistor

9. Package outline

10. Packing information

[1] For further information and the availability of packing methods, see Section 17.

[2] T1: normal taping

[3] T2: reverse taping

Fig 15. Package outline SOT457 (SC-74)

04-11-08Dimensions in mm

3.0

2.5 1.7

1.3

3.1

2.7

pin 1 index

1.9

0.26

0.10

0.40

0.25

0.95

1.1

0.9

0.6

0.2

132

Table 8: Packing methods

The indicated -xxx are the last three digits of the 12NC ordering code.

[1]

Type number Package Description Packing quantity

3000 10000

PBSS4160DS SOT457 4 mm pitch, 8 mm tape and reel; T1 [2] -115 -135

4 mm pitch, 8 mm tape and reel; T2 [3] -125 -165

Product data sheet Rev. 02 — 27 June 2005 11 of 14

Philips Semiconductors PBSS4160DS

60 V, 1 A NPN/NPN low VCEsat (BISS) transistor

11. Soldering

Dimensions in mm

Fig 16. Reﬂow soldering footprint

Dimensions in mm

Fig 17. Wave soldering footprint

solder lands

solder resist

occupied area

solder paste

0.95

2.825 0.45 0.55

1.60

1.95

3.45

1.70

3.10

3.20

3.30

msc422

1.40

4.30

5.30

0.45

MSC423

1.45 4.45

5.05

solder lands

solder resist

occupied area

solder paste

Product data sheet Rev. 02 — 27 June 2005 12 of 14

Philips Semiconductors PBSS4160DS

60 V, 1 A NPN/NPN low VCEsat (BISS) transistor

12. Revision history

Table 9: Revision history

Document ID Release date Data sheet status Change notice Doc. number Supersedes

PBSS4160DS_2 20050627 Product data sheet - - PBSS4160DS_1

Modiﬁcations: •Product status changed

•Table 7 “Characteristics”: Switching times parameters td, tr, ton, ts, tf, and toff added

•Figure 13 “BISS transistor switching time deﬁnition”: added

•Figure 14 “Test circuit for switching times”: added

•Section 10 “Packing information”: added

•Section 11 “Soldering”: added

•Section 16 “Trademarks”: added

PBSS4160DS_1 20040426 Objective data sheet - 9397 750 12703 -

Philips Semiconductors PBSS4160DS

60 V, 1 A NPN/NPN low VCEsat (BISS) transistor

Product data sheet Rev. 02 — 27 June 2005 13 of 14

13. Data sheet status

[1] Please consult the most recently issued data sheet before initiating or completing a design.

[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at

URL http://www.semiconductors.philips.com.

[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

14. Deﬁnitions

Short-form speciﬁcation — The data in a short-form speciﬁcation is

extracted from a full data sheet with the same type number and title. For

detailed information see the relevant data sheet or data handbook.

Limiting values deﬁnition — Limiting values given are in accordance with

the Absolute Maximum Rating System (IEC 60134). Stress above one or

more of the limiting values may cause permanent damage to the device.

These are stress ratings only and operation of the device at these or at any

other conditions above those given in the Characteristics sections of the

speciﬁcation is not implied. Exposure to limiting values for extended periods

may affect device reliability.

Application information — Applications that are described herein for any

of these products are for illustrative purposes only. Philips Semiconductors

make no representation or warranty that such applications will be suitable for

the speciﬁed use without further testing or modiﬁcation.

15. Disclaimers

Life support — These products are not designed for use in life support

appliances, devices, or systems where malfunction of these products can

reasonably be expected to result in personal injury. Philips Semiconductors

customers using or selling these products for use in such applications do so

at their own risk and agree to fully indemnify Philips Semiconductors for any

damages resulting from such application.

Right to make changes — Philips Semiconductors reserves the right to

make changes in the products - including circuits, standard cells, and/or

software - described or contained herein in order to improve design and/or

performance. When the product is in full production (status ‘Production’),

relevant changes will be communicated via a Customer Product/Process

Change Notiﬁcation (CPCN). Philips Semiconductors assumes no

responsibility or liability for the use of any of these products, conveys no

license or title under any patent, copyright, or mask work right to these

products, and makes no representations or warranties that these products are

free from patent, copyright, or mask work right infringement, unless otherwise

speciﬁed.

16. Trademarks

Notice — All referenced brands, product names, service names and

trademarks are the property of their respective owners.

17. Contact information

For additional information, please visit: http://www.semiconductors.philips.com

For sales ofﬁce addresses, send an email to: sales.addresses@www.semiconductors.philips.com

Level Data sheet status[1] Product status[2] [3] Deﬁnition

I Objective data Development This data sheet contains data from the objective speciﬁcation for product development. Philips

Semiconductors reserves the right to change the speciﬁcation in any manner without notice.

II Preliminary data Qualiﬁcation This data sheet contains data from the preliminary speciﬁcation. Supplementary data will be published

at a later date. Philips Semiconductors reserves the right to change the speciﬁcation without notice, in

order to improve the design and supply the best possible product.

III Product data Production This data sheet contains data from the product speciﬁcation. Philips Semiconductors reserves the

right to make changes at any time in order to improve the design, manufacturing and supply. Relevant

changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN).

All rights are reserved. Reproduction in whole or in part is prohibited without the prior

written consent of the copyright owner. The information presented in this document does

not form part of any quotation or contract, is believed to be accurate and reliable and may

be changed without notice. No liability will be accepted by the publisher for any

consequence of its use. Publication thereof does not convey nor imply any license under

patent- or other industrial or intellectual property rights. Date of release: 27 June 2005

Document number: PBSS4160DS_2

Published in The Netherlands

Philips Semiconductors PBSS4160DS

60 V, 1 A NPN/NPN low VCEsat (BISS) transistor

18. Contents

1 Product proﬁle . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 9

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10

10 Packing information. . . . . . . . . . . . . . . . . . . . . 10

11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12

13 Data sheet status. . . . . . . . . . . . . . . . . . . . . . . 13

14 Deﬁnitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

15 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

16 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

17 Contact information . . . . . . . . . . . . . . . . . . . . 13