91212 TKIM/1051 1 TKIM TC-00002535/N2509GB TKIM TC-00002097 No. A1617-1/7
http://onsemi.com
Semiconductor Components Industries, LLC, 2013
August, 2013
TF256TH
N-Channel JFET
20V, 140 to 450μA, 1.7mS, VTFP
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Ordering number : ENA1617B
Features
• High gain : GV=2.7dB typ (VCC=2V, RL=2.2kΩ, Cin=5pF, VIN=10mV, f=1kHz)
•
Ultrasmall package facilitates miniaturization in end products
•
Best suited for use in electret condenser microphone for audio equipments and telephones
•
Excellent transient characteristics
•
Adoption of FBET process
•
Halogen free compliance
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Gate-to-Drain Voltage VGDO --20 V
Gate Current IG10 mA
Drain Current ID1mA
Allowable Power Dissipation PD100 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
Package Dimensions
unit : mm (typ)
7031A-001
Product & Package Information
• Package : VTFP
• JEITA, JEDEC : SC-106A
• Minimum Packing Quantity : 8,000 pcs./reel
Packing Type: TL Marking
Electrical Connection
1 : Drain
2 : Source
3 : Gate
VTFP
1
3
12
2
3
1.4
1.2
0.8
0.34
0.07 0.07 0.2 0.2
0.25
0.2
0.45
0.1
0 to 0.02
TL
TF256TH-3-TL-H
TF256TH-4-TL-H
TF256TH-5-TL-H
1
3
2
LOT No.
LOT No.
N
RANK
TF256TH
No. A1617-2/7
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Rank min typ max
Gate-to-Drain Breakdown Voltage V(BR)GDO IG=--100μA --20 V
Cutoff Voltage VGS(off) VDS=2V, ID=1μA --0.1 --0.35 --1.0 V
Drain Current IDSS*V
DS=2V, VGS=0V
3
100 180
μA
4
140 280
5 240 450
Forward Transfer Admittance | yfs |VDS=2V, VGS=0V, f=1kHz 0.75 1.7 mS
Input Capacitance Ciss VDS=2V, VGS=0V, f=1MHz 3.1 pF
Reverse Transfer Capacitance Crss 1.0 pF
[Ta=25°C, VCC=2.0V, RL=2.2kΩ, Cin=5pF, See specifi ed Test Circuit.]
Voltage Gain GVVIN=10mV, f=1kHz 3 1.0 dB4 2.0
5 3.0
Reduced Voltage Characteristic ΔGVV
VIN=10mV, f=1kHz, VCC=2.0V → 1.5V
3 --0.5 --1.0 dB4 --0.6 --1.3
5 --0.9 --2.0
Frequency Characteristic ΔGvf f=1kHz to 110Hz --1.0 dB
Total Harmonic Distortion THD VIN=30mV, f=1kHz 3 1.4 %4 0.9
5 0.35
Output Noise Voltage VNO VIN=0V, A curve --105 --100 dB
* : The TF256TH is classifi ed by IDSS as follows : (unit : μA)
Rank 3 4 5
IDSS 100 to 180 140 to 280 240 to 450
Test Circuit
Ordering Information
Device Package Shipping memo
TF256TH-3-TL-H VTFP 8,000pcs./reel Pb Free and Halogen FreeTF256TH-4-TL-H VTFP 8,000pcs./reel
TF256TH-5-TL-H VTFP 8,000pcs./reel
OSC
5pF +
33μF
2.2kΩVCC=2.0V
VCC=1.5V
V
VTVM
THD
Voltage gain
Frequency Characteristic
Distortion
Reduced Voltage Characteristic
TF256TH
No. A1617-3/7
ID -- VDS
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- μA
ID -- VGS
Gate-to-Source Voltage, VGS -- V
Drain Current, ID -- μA
0 0.5 4.0 4.5 5.01.0 1.5 2.0 2.5 3.0 3.5
400
300
350
200
250
100
50
150
0
IT15213
--0.10V
--0.05V
--0.15V
--0.20V
--0.25V
--0.30V
VGS=0V
450
350
250
50
150
--0.50 --0.40 --0.30 --0.20 --0.10 0--0.45 --0.35 --0.25 --0.15 --0.05
500
400
300
200
100
0
IT16271
VDS=2V
IDSS=450μA
300μA
150
μ
A
100μA
VGS(off) -- IDSS
| yfs | -- IDSS
Ciss -- VDS
Crss -- VDS
Drain Current, IDSS -- μA
Forward T ransfer Admittance, | yfs | -- mS
Drain Current, IDSS -- μA
Cutoff Voltage, VGS(off) -- V
Drain-to-Source Voltage, VDS -- V
Input Capacitance, Ciss -- pF
Drain-to-Source Voltage, VDS -- V
Reverse Transfer Capacitance, Crss -- pF
ID -- VGS
Gate-to-Source Voltage, VGS -- V
Drain Current, ID -- μA
GV -- IDSS
Drain Current, IDSS -- μA
Voltage Gain, GV -- dB
IT15218
10
7
5
3
2
1.0 1.0 10
23 57357 2
VGS=0V
f=1MHz
1.0
7
5
3
3
2
1.0 10
23 57357 2
IT15219
VGS=0V
f=1MHz
VDS=2V
Ta=75°C
25°C
--25°C
450
350
250
50
150
--0.50 --0.40 --0.30 --0.20 --0.10 0--0.45 --0.35 --0.25 --0.15 --0.05
400
300
200
100
0
IT15215
0
0.20
0.15
0.10
0.05
0.25
0.30
0.35
0.40
0.45
0.50 VDS=2V
ID=1μA
0
0.5
1.0
1.5
2.0
2.5
50 200 300 400 500100 150 250 350 450
IT16272
50 100 200 300 400 500150 250 350 450
--0.5
2.0
3.0
2.5
1.0
0
0.5
1.5
3.5
50 100 200 300 400 500150 250 350 450
IT16273
VDS=2V
VGS=0V
f=1kHz
IT16274
GV : VCC=2V
V
IN=10mV
f=1kHz
R
L=2.2kΩ
Cin=5pF
IDSS : VDS=2V
TF256TH
No. A1617-4/7
GV -- Cin
Electret Capacitance, Cin -- pF
Voltage Gain, GV -- dB
GV -- VCC
Supply Voltage, VCC -- V
Voltage Gain, GV -- dB
01234 65
--3
--2
--1
2
0
1
4
6
3
5
7
IT16275 IT16276
GV : VIN=10mV
f=1kHz
R
L=2.2kΩ
Cin=5pF
IDSS=450μA
300μA
150μA
02468 1612 1410
--10
--8
--6
0
--4
--2
4
8
2
6
10 GV : VCC=2V
V
IN=10mV
f=1kHz
R
L=2.2kΩ
IDSS=450μA
300μA
150μA
100μA
100μA
THD -- IDSS
Drain Current, IDSS -- μA
Total Harmonic Distortion, THD -- %
THD -- VIN
Input Voltage, VIN -- mV
Total Harmonic Distortion, THD -- %
ΔGVV -- IDSS
Drain Current, IDSS -- μA
Reduced Voltage Characteristic, ΔGVV -- dB
0
IT16279
0.4
0.6
0.8
1.2
1.4
1.6
1.8
0.2
1.0
2.4
2.0
2.2 THD : VCC=2V
V
IN=30mV
f=1kHz
R
L=2.2kΩ
Cin=5pF
IDSS : VDS=2V
10
100
1.0
7
5
3
2
7
5
3
2
7
5
3
2
0.1 0 50 100 150 200
IT16278
--1.6
--1.4
--1.2
--1.0
--0.8
--0.4
--0.6
--0.2
0ΔGVV : VCC=2V→1.5V
V
IN=10mV
f=1kHz
R
L=2.2kΩ
Cin=5pF
IDSS : VDS=2V
THD : VCC=2V
f=1kHz
R
L=2.2kΩ
Cin=5pF
50 100 200 300 400 500150 250 350 450
50 100 200 300 400 500150 250 350 450
IT16277
IDSS=100μA
300μA
450μA
150μA
PD -- Ta
Ambient Temperature, T a -- °C
Allowable Power Dissipation, PD -- mW
80
100
120
40
20
60
00 16014012010080604020
IT15227
TF256TH
No. A1617-5/7
Taping Specifi cation
TF256TH-3-TL-H, TF256TH-4-TL-H, TF256TH-5-TL-H
TF256TH
No. A1617-6/7
Outline Drawing Land Pattern Example
TF256TH-3-TL-H, TF256TH-4-TL-H, TF256TH-5-TL-H
Mass (g) Unit
mm Unit: mm
0.0012
* For reference
0.5
0.4
0.45 0.45
0.45 0.45
1.1
TF256TH
PS No. A1617-7/7
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