2SK4033 - Toshiba - Datasheet.Directory

2SK4033

2009-09-29

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS III)

2SK4033

Chopper Regulator, DC-DC Converter and Motor Drive

Applications

z 4-V gate drive

z Low drain−source ON-resistance: RDS (ON) = 0.07 Ω (typ.)

z High forward transfer admittance: |Yfs| = 6.0 S (typ.)

z Low leakage current: IDSS = 100 μA (max) (VDS = 60 V)

z Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic Symbol Rating Unit

Drain−source voltage VDSS 60 V

Drain−gate voltage (RGS = 20 kΩ) VDGR 60 V

Gate−source voltage VGSS ±20 V

DC (Note 1) ID 5 A

Drain current

Pulse (Note 1) IDP 20 A

Drain power dissipation (Tc = 25°C) PD 20 W

Single-pulse avalanche energy

(Note 2)

EAS 40.5 mJ

Avalanche current IAR 5 A

Repetitive avalanche energy (Note 3) EAR 2 mJ

Channel temperature Tch 150 °C

Storage temperature range Tstg −55 to 150 °C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability

Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.

reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristic Symbol Max Unit

Thermal resistance, channel to case Rth (ch−c) 6.25 °C / W

Thermal resistance, channel to ambient Rth (ch−a) 125 °C / W

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: VDD = 25 V, Tch = 25°C (initial), L = 2.2 mH, RG = 25 Ω, IAR = 5 A

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device. Handle with care.

Unit: mm

1.1 ± 0. 2

0.1 ± 0. 1

1.05 MAX.

2.3 ± 0. 15

5.2 ± 0. 2

0.8 MA X.

0.6 MA X.

9.5 ± 0. 3

1.2 MA X.

1.5 ± 0. 2

6.5 ± 0. 2

0.6 MA X.

5.5 ± 0. 2

0.6 ± 0. 15

2.3 ± 0. 2

2.3 ± 0. 15

1. GATE

2. DRAIN

（HEAT SINK）

3. SOURSE

JEDEC ⎯

JEITA ⎯

TOSHIBA 2-7J1B

Weight: 0.36 g (typ.)

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2SK4033

2009-09-29

Electrical Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition Min Typ. Max Unit

Gate leakage current IGSS V

GS = ±16 V, VDS = 0 V — — ±10 μA

Drain cutoff current IDSS V

DS = 60 V, VGS = 0 V — — 100 μA

V (BR) DSS I

D = 10 mA, VGS = 0 V 60 — — V

Drain-source breakdown voltage

V (BR) DSX I

D = 10 mA, VGS = -20 V 35 ― ― V

Gate threshold voltage Vth V

DS = 10 V, ID = 1 mA 1.3 — 2.5 V

VGS = 4 V, ID = 2.5 A — 0.09 0.15

Drain−source ON-resistance RDS (ON)

VGS = 10 V, ID = 2.5 A — 0.07 0.10

Forward transfer admittance |Yfs| VDS = 10 V, ID = 2.5 A 3.0 6.0 — S

Input capacitance Ciss — 730 —

Reverse transfer capacitance Crss — 60 —

Output capacitance Coss

VDS = 10 V, VGS = 0 V, f = 1 MHz

— 95 —

Rise time tr — 10 —

Turn−on time ton — 20 —

Fall time tf — 4 —

Switching time

Turn−off time toff

— 35 —

Total gate charge (gate−source

plus gate−drain) Qg — 15 —

Gate−source charge Qgs — 11 —

Gate−drain (“Miller”) charge Qgd

VDD ≈ 48 V, VGS = 10 V, ID = 5 A

— 4 —

Source−Drain Ratings and Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition Min Typ. Max Unit

Continuous drain reverse current

(Note 1)

IDR — — — 5 A

Pulse drain reverse current

(Note 1)

IDRP — — — 20 A

Forward voltage (diode) VDSF I

DR = 5 A, VGS = 0 V — — −1.7 V

Reverse recovery time trr — 34 — ns

Reverse recovery charge Qrr

IDR = 5 A, VGS = 0 V, dIDR / dt = 50 A / μs

— 28 — nC

Marking

K4033

Lot No.

Note 4

Part No. (or abbreviation code)

Note 4: A line under a Lot No. identifies the indication of product

Labels.

Not underlined: [[Pb]]/INCLUDES > MCV

Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]

Please contact your TOSHIBA sales representative for details as to

environmental matters such as the RoHS compatibility of Product.

The RoHS is the Directive 2002/95/EC of the European Parliament

and of the Council of 27 January 2003 on the restriction of the use of

certain hazardous substances in electrical and electronic equipment.

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2SK4033

2009-09-29

Ｉ

Ｄ

－Ｖ

ＤＳ

0 0.4 0.8 1.2 1.6 2

ドレイン・ソース間電圧　Ｖ

ＤＳ

　　　（Ｖ）

ドレイン電流　Ｉ

Ｄ

　　　（Ａ）

　ソース接地

　Tc=25℃

　パルス測定

=2.8V

3.3

ＩＤ－ＶＤＳ

0246810

ドレイン・ソース間電圧　ＶＤＳ　　　（Ｖ）

ドレイン電流　ＩＤ　　　（Ａ）

　ソース接地

　Tc=25℃

　パルス測定

VGS=2.8V

3.3

Ｉ

Ｄ

-Ｖ

ＧＳ

012345

ゲート・ソース間電圧　Ｖ

ＧＳ

　　(V)

ドレイン電流　Ｉ

Ｄ

　　　（Ａ）

　ソース接地

=10V

　パルス測定

Tc=-55℃

100

0.1

100

0.1 1 10 100

Ｒ

ＤＳ

(on)－Ｉ

Ｄ

0.1

0.2

0.3

0.4

0.5

0246810

ドレイン電流　Ｉ

Ｄ

　　　(A)

ドレイン・ソース間オン抵抗　R

(on)　　　(m

Ω)

　ソース接地

　Ｔｃ=25℃

　パルス測定

=10V

Ｖ

ＤＳ

－Ｖ

ＧＳ

0.4

0.8

1.2

1.6

0 4 8 12 16 20

ゲート・ソース間電圧　Ｖ

ＧＳ

　　　（Ｖ）

ドレイン・ソース間電圧　Ｖ

ＤＳ

　　　（Ｖ）

　ソース接地

　Ｔｃ=25℃

　パルス測定

Ｉ

Ｄ

=1.2A

2.5

ドレイン･ソース間オン抵抗

RDS

(

)

(mΩ)

⎪Yfs⎪ – ID

順方向伝達アドミタンス ⎪Yfs⎪ (S)

ドレイン電流 I

D (A)

Tc = −55°C

100

Drain-source voltage VDS (V)

Drain current ID (A)

Forward transfer admittance ⎪Yfs⎪ (S)

Drain-source voltage VDS (V)

Drain current ID (A)

Gate-source voltage VGS (V)

Drain current ID (A)

Gate-source voltage VGS (V)

Drain current ID (A) Drain current ID (A)

Drain-source ON resistance RDS (ON) (Ω)

Drain-source voltage VDS (V)

Common source

Tc = 25°C

Pulse test

Common source

Tc = 25°C

Pulse test

Common source

Tc = 25°C

Pulse test

Common source

VDS = 10 V

Pulse test

Common source

VDS = 10 V

Pulse test

Common source

Ta = 25°C

Pulse test

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2SK4033

2009-09-29

Ｒ

ＤＳ

（ｏｎ）－Ｔｃ

0.05

0.1

0.15

0.2

-80 -40 0 40 80 120 160

ケース温度　Ｔｃ　　（℃)

ドレイン・ソース間オン抵抗　Ｒ

ＤＳ

(on)　　(Ω)

=4V

=10V

Ｉ

Ｄ

=5A

2.5

1.2

　ソース接地

　パルス測定

静電容量－Ｖ

ＤＳ

100

1000

10000

0.1 1 10 100

ドレイン・ソース間電圧　Ｖ

ＤＳ

　　（Ｖ）

静電容量　Ｃ　　(ｐＦ)

Ciss

Coss

Crss

　ソース接地

　VGS=0V

　f=1MHz

　Tc=25℃

Ｖｔｈ－Ｔｃ

1.2

1.4

1.6

1.8

2.2

2.4

2.6

-80 -40 0 40 80 120 160

ケース温度　Ｔｃ　　(℃)

ゲートしきい値電圧　　Vth　　(V)

　ソース接地

=10V

　Ｉ

Ｄ

=1mA

　パルス測定

ゲート・ソース間電圧　Ｖ

ＧＳ

　　（Ｖ）

ダイナミック入出力特性

0 5 10 15 20 25 30

ゲート入力電化量　Ｑｇ　　（ｎＣ）

ドレイン・ソース間電圧　Ｖ

ＤＳ

　　（Ｖ）

　ソース接地

　Ｉ

Ｄ

=5A

　Ｔｃ=25℃

　パルス測定

ＤＤ

=４８V

ＤS

２４V

１２V

Ｉ

ＤＲ

－Ｖ

ＤＳ

0.1

ドレイン・ソース間電圧　Ｖ

ＤＳ

　　（Ｖ）

ドレイン逆電流　Ｉ

ＤＲ　

　　（Ａ）

0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2

　ソース接地

　Ｔｃ=25℃

　パルス測定

VGS=0V

VGS = 0 V

Gate threshold voltage Vth (V)

Case temperature Tc (°C)

Total gate charge Qg (nC)

Capacitance C (pF)

Capacitance – VDS

Drain-source voltage VDS (V)

Drain-source ON resistance RDS (ON) (Ω)

Ambient temperature Ta (°C)

Drain reverse current IDR (A)

Drain-source voltage VDS (V)

Dynamic input / output

characteristics

Case temperature Tc (°C)

Drain power dissipation PD (W)

Gate-source voltage VGS (V)

Common source

ID = 5 A

Tc = 25°C

Pulse test

Common source

Pulse test

Common source

VGS = 0 V

f = 1 MHz

Tc = 25°C

Common source

VDS = 10 V

ID = 1 mA

Pulse test

Common source

Tc = 25°C

Pulse test

Drain-source voltage VDS (V)

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2SK4033

2009-09-29

安全動作領域

0.01

0.1

100

0.1 1 10 100

ドレイン・ソース間電圧　　Ｖ

ＤＳ

　　（Ｖ）

ドレイン電流　　Ｉ

Ｄ

　　（Ａ）

*：単発パルス　Tc=25℃

安全動作領域は温度によって

ディレーティングして考える必

要があります。

　max(パルス)*

　max(連続)

直流動作

Tc=25℃

DSS

　max

100μs*

1ms*

rth − tw

0.01

10 μ 100 μ 1 m 10 m 100 m 1 10

0.1

0.01

0.02

0.05

0.1

0.2

Duty = 0.5

Single pulse

PDM

Duty = t/T

Rth (ch-c) = 6.25°C/W

EAS – Tch

50 75 100 125 150

Channel temperature (initial) Tch (°C)

Avalanche energy EAS (mJ)

Pulse width tw (s)

Normalized transient thermal impedance

rth (t)/Rth (ch-c)

SAFE OPERATING AREA

Drain-source voltage VDS (V)

Drain current ID (A)

* Single pulse

Tc = 25°C

Curves must be derated linearly

with increase in temperature.

IDmax (continuous)

ID max (pulse)*

DC OPERATION

TC =25°C

RG = 25 Ω

VDD = 25 V, L = 2.2 mH ⎟

⎟

⎠

⎞

⎜

⎝

⎛

−

⋅⋅⋅= VDD

BVDSS

ΕAS

Test circuit Waveform

IAR

BVDSS

VDD V

0 V

15 V

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2SK4033

2009-09-29

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in this document, and related hardware, software and systems (collectively “Product”) without notice.

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TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.

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responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and

systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily

injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must

also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document,

the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA

Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are

solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the

appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any

information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other

referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO

LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS.

• Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring

equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.

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• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.

Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,

including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of

noncompliance with applicable laws and regulations.

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