BPX81-3/4 - Infineon Technologies

BPX 81

NPN-Silizium-Fototransistor

Silicon NPN Phototransistor

2001-02-21 1

Wesentliche Merkmale

• Speziell geeignet für Anwendungen im Bereich

von 440 nm bis 1070 nm

• Hohe Linearität

• Einstellige Zeilenbauform aus klarem Epoxy

• Gruppiert lieferbar

Anwendungen

• Computer-Blitzlichtgeräte

• Miniaturlichtschranken für Gleich- und

Wechsellichtbetrieb

• Industrieelektronik

• „Messen/Steuern/Regeln“

Typ

Type Bestellnummer

Ordering Code

BPX 81 Q62702-P20

BPX 81-2/3 Q62702-P3583

BPX 81-3 Q62702-P43-S3

BPX 81-3/4 Q62702-P3584

BPX 81-4 Q62702-P43-S4

Features

• Especially suitable for applications from

440 nm to 1070 nm

• High linearity

• One-digit array package of transparent epoxy

• Available in groups

Applications

• Computer-controlled flashes

• Miniature photointerrupters

• Industrial electronics

• For control and drive circuits

2001-02-21 2

BPX 81

Grenzwerte

Maximum Ratings

Bezeichnung

Parameter Symbol

Symbol Wert

Value Einheit

Unit

Betriebs- und Lagertemperatur

Operating and storage temperature range Top; Tstg – 40 …+ 80 °C

Löttemperatur bei Tauchlötung

Lötstelle ≥ 2 mm vom Gehäuse, Lötzeit t ≤ 3 s

Dip soldering temperature ≥ 2 mm distance

from case bottom, soldering time t ≤ 3 s

TS230 °C

Löttemperatur bei Kolbenlötung

Lötstelle ≥ 2 mm vom Gehäuse, Lötzeit t ≤ 5 s

Iron soldering temperature ≥ 2 mm distance

from case bottom, soldering time t ≤ 5 s

TS300 °C

Kollektor-Emitterspannung

Collector-emitter voltage VCE 32 V

Kollektorstrom

Collector current IC50 mA

Kollektorspitzenstrom, τ < 10 µs

Collector surge current ICS 200 mA

Verlustleistung, TA = 25 °C

Total power dissipation Ptot 90 mW

Wärmewiderstand

Thermal resistance RthJA 750 K/W

BPX 81

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Kennwerte (TA = 25 °C, λ = 950 nm)

Characteristics

Bezeichnung

Parameter Symbol

Symbol Wert

Value Einheit

Unit

Wellenlänge der max. Fotoempfindlichkeit

Wavelength of max. sensitivity λS max 850 nm

Spektraler Bereich der Fotoempfindlichkeit

S = 10% von Smax

Spectral range of sensitivity

S = 10% of Smax

λ440 …1070 nm

Bestrahlungsempfindl iche Fläche

Radiant sensitive area A0.17 mm2

Abmessung der Chipfläche

Dimensions of chip area L × B

L × W0.6 ×0.6 mm × mm

Abstand Chipoberfläche zu Gehäuseoberfläche

Distance chip front to case surface H1.3 …1.9 mm

Halbwinkel

Half angle ϕ±18 Grad

deg.

Kapazität

Capacitance

VCE = 0 V, f = 1 MHz, E = 0

CCE 6pF

Dunkelstrom

Dark current

VCE = 25 V, E = 0

ICEO 25 (≤ 200) nA

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BPX 81

Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern

gekennzeichnet.

The phototransistors are grouped according to their spectral sensitivity and distinguished by

arabian figures.

Bezeichnung

Parameter Symbol

Symbol Wert

Value Einheit

Unit

-2 -3 -4

Fotostrom, λ = 950 nm

Photocurrent

Ee = 0.5 mW/cm2, VCE = 5 V

Ev = 1000 Ix, Normlicht/standard light A,

VCE = 5 V

IPCE

0.25 …0.50

1.4 0.40 …0.80

2.2 ≥ 0.63

3.4 mA

Anstiegszeit/Abfallzeit

Rise and fall time

IC = 1 mA, VCC = 5 V, RL = 1 kΩ

tr, tf5.5 6 8 µs

Kollektor-Emitter-Sättigungsspannung

Collector-emitter saturation voltage

IC = IPCEmin1) × 0.3

Ee = 0.5 mW/cm2

VCEsat 150 150 150 mV

1) IPCEmin ist der minimale Fotostrom der jeweiligen Gruppe.

1) IPCEmin is the min. phot oc urrent of the spe c ifie d group.

BPX 81

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Relati ve Sp ectral Sensi ti vi ty

Srel = f (λ)

Photocurrent

IPCE/IPCE25o = f (TA), VCE = 5 V

Directional Chara cter i sti cs

Srel = f (ϕ)

Photocurrent

IPCE = f (Ee), VCE = 5 V

Collector-Emitter Cap aci tance

CCE = f (VCE), f = 1 MHz, E = 0

Total Powe r Dissip ation

Ptot = f (TA)

Dark Current

ICEO = f (VCE), E = 0

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BPX 81

Maßzeichnung

Package Outlines

Maße werden wi e fo lgt angegeben: m m (inc h) / Dim ensions are specified as follo w s: m m (inc h).

Published by OSRAM Opto Semiconductors GmbH & Co. OHG

Wernerwerkstrasse 2, D-93049 Regensburg

Attention please!

The inform at ion describe s the type of component and sha ll not be c ons idered as assur ed characteris tics .

Terms of delivery and rights to change design reserved. Due to technical requirements components may contain

dangerous substances. For information on the types in question please contact our Sales Organization.

Packing

Please use the recyc ling operat ors known t o you. We can also help y ou – get in touch wit h your near est sales offic e.

By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing

material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs

incurred.

Components used in life-support devices or systems must be expressly authorized for such purpose! Critical

components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.

1 A critica l component is a co mponent usedin a l ife-support devi ce or system whose failure can re asonably be expec ted

to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.

2 Life sup port device s or syst ems ar e int ended (a ) to b e imp lanted in t he hu man body , or ( b) to supp ort a nd/or main tain

and sust ain human life. If th ey fail , it is rea so nable to assum e th at the health of the user may be endangered.

GEOY6021

2.4 (0.094)

2.1 (0.083)

0.7 (0.028)

0.6 (0.024)

Collector (BPX 81)

Cathode (LD 261)

2.54 (0.100) spacing

1.5 (0.059)

2.1 (0.083)

2.7 (0.106)

2.5 (0.098)

3.2 (0.126)

3.6 (0.142)

3.0 (0.118)

3.5 (0.138)

1.9 (0.075)

1.7 (0.067)

position

Chip

0.25 (0.010)

0.15 (0.006)

1.4 (0.055)

1.0 (0.039)

0.4

0.5 (0.020)

0.4 (0.016)

Radiant sensitive area

(0.4 x 0.4)

Detaching area for tools, flash not true to size.1)

5˚...0