1. General description
The UBA20270 is a high-voltage power IC intended to control higher powered self
ballasted Compact Fluorescent Lamp (CFL) lighting applications. The UBA20270 is a
controller circuit with advanced features for dimming and has a lamp current controlled
boost feature for boosting cold (amalgam) CFLs.
The controller contains a half-bridge drive function for CFL, a high-voltage level-shift
circuit with integrated bootstrap diode. In addition, the controller contains an oscillator
function, a current control function both for preheat and burn, a timer function and
protection circuits. The UBA20270 is supplied via a dV/dt current charge supply circuit
from the half-bridge circuit.
Remark: Mains voltages noted are AC.
2. Features and benefits
2.1 Half-bridge features
Integrated high-voltage level-shift function with integrated bootstrap diode
2.2 Preheat and ignition features
Coil saturation protection during ignition
Adjustable preheat time
Adjustable preheat curr en t
Ignition lamp current detection
2.3 Lamp boost features
Adjustable boost timing
Fixed boost current ratio of 1.5
Gradually boost to burn transition timing
2.4 Dim features
Continuously variable dimming function for standard phase cut dimmers
Natural dimming curve by logarithmic correction
Adjustable Minimum Dimm in g Le vel (MD L)
Controlled lamp ON/OFF
UBA20270
600 V Driver IC for dimmable compact fluorescent lamps
Rev. 2 — 8 September 2011 Product data sheet
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Product data sheet Rev. 2 — 8 September 2011 2 of 32
NXP Semiconductors UBA20270
600 V Driver IC for dimmable compact fluorescent lamps
2.5 Protection
OverCurrent Protection (OCP) in boost and burn state
Capacitive Mode Protection (CMP)
OverPower Protection (OPP)
Power-down function
OverTemperature Protection (OTP)
2.6 Other features
Current controlled operating in boost and burn state
External power- down function
Lamp flicker suppression
3. Applications
Dimmable compact fluorescent lamps for power levels above 20 W and for universal
mains voltages.
4. Ordering information
Table 1. Ordering information
Type number Package
Name Description Version
UBA20270T/N1 SO16 Plastic small outline package; 16 leads; body width 3.9 mm SOT109-1
xxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx x xxxxxxxxxxxxxx xxxxxxxxxx xxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxx
xxxxx xxxxxx xx xxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxx xxxxxxx xxxxxxxxxxxxxxxxxxx
xxxxxxxxxxxxxxxx xxxxxxxxxxxxxx xxxxxx xx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx
xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxx xxxxx x x
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Product data sheet Rev. 2 — 8 September 2011 3 of 32
NXP Semiconductors UBA20270
600 V Driver IC for dimmable compact fluorescent lamps
5. Block diagram
Fig 1. Block diagram
LEVEL SHIFT
BOOTSTRAP FS
LOGIC
Vph(SLS)
25 μA
25 μA
Vth(det)ign(CSI)
LOGIC
PGND
DIMMER
CONTROL
DCI
LEVEL
SHIFTER
HS
driver
LS
driver
SLS
REFERENCE
CURRENT
1.27 V
RREF CF CI CSI
FREQUENCY
CONTROL
LOGIC
DSR
OTA
LAMP
CURRENT
SENSOR
BOOST
AMPLIFIER
BOOST ENABLE
IGNITION CURRENT DETECTOR
START ENABLE
VOLTAGE
CONTROLLED OSCILLATOR
VCO
I
V
TEMPERATURE
SENSOR
160° 120° 80°
DIVIDE BY 2
LOGIC
DRIVER
LOGIC
VDD
SUPPLY
5 V DIGITAL
REFERENCE
VOLTAGES
5 V
1 μA 6 μA
LOGIC COUNTER
PREHEAT/
BOOST TIMER
VS LOW
RESET
60 μA
Vclamp
(CSI)
CP
CB
SGND
12
Vth(capm)SLS
Vth(ocp)SLS
001aam663
MDL
Votp(CSI)
VLD
Vth(bst)
(DCI)
Vth(start)
(DCI)
VT(hec1)
DCI
DCI
13
11
4
14
GHS16
3
10
79865
1
HBO15
GLS2
RESET STATE
START-UP STATE
PREHEAT STATE
IGNITION STATE
HOLD STATE
BOOST STATE
BURN STATE
POWER-DOWN STATE
STATE LOGIC
5 V ANALOG
INDUCTOR SATURATION/
OVERCURRENT DETECTOR
PREHEAT CURRENT SENSOR
CAPACITIVE MODE DETECTOR
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Product data sheet Rev. 2 — 8 September 2011 4 of 32
NXP Semiconductors UBA20270
600 V Driver IC for dimmable compact fluorescent lamps
6. Pinning information
6.1 Pinning
6.2 Pin description
Fig 2. Pin confi gura tio n (SO1 6 )
UBA20270
SLS GHS
GLS HBO
PGND FS
VDD SGND
RREF CB
CF CP
MDL DCI
CI CSI
001aam664
1
2
3
4
5
6
7
8
10
9
12
11
14
13
16
15
Tabl e 2. Pin description
Symbol Pin Description
SLS 1source low-side switch input
GLS 2low-side gate driver output
PGND 3power ground
VDD 4low voltage supply
RREF 5internal reference current input
CF 6voltage controlled oscillator capacitor
MDL 7minimum dimming level input
CI 8voltage controlled oscillator input integrating capacitor
CSI 9current feedback sense input
DCI 10 dimming level input
CP 11 preheat timing capacitor
CB 12 boost timing capacitor
SGND 13 signal ground
FS 14 floating supply voltage
HBO 15 half-bridge output
GHS 16 high-side gate driver outp ut
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Product data sheet Rev. 2 — 8 September 2011 5 of 32
NXP Semiconductors UBA20270
600 V Driver IC for dimmable compact fluorescent lamps
7. Functional description
The UBA20270 is an IC for driving external half-bridge MOSFETs in self ballasted
high-power CFL and their de rivatives. T he U BA20 270 is equ ipp ed with a dimm ing co ntrol
input that has a logarithmic corrected natural dimming fu nct ion . Th is fu nct i on enab l es a
less sensitive brightness control of the lamp at low dim levels.
The UBA20270 is rated up to a maximum continuous rectified mains voltage of 500 V
(peak 600 V). The UBA20270 includes all the necessary functions for preheat, ignition,
boost, and on-state operation of the lamp. In addition, the UBA20270 includes several
protection measures that safeguard the functioning of the CFL and controller. The
controller states are shown in Figure 3.
(1) VDD > VDD(start) AND Vi(DCI) > Vth(start)DCI AND (HOLD = 0 OR VCP < Vth(rel)CP)
(2) VDD < VDD(stop) OR Vi(DCI) < Vth(start)DCI Vth(hys)DCI
(3) (End of ignition time AND HOLD = 0) OR VDD < VDD(stop) OR Vi(DCI) < Vth(start)DCI Vth(hys)DCI
(4) End of ignition time AND HOLD = 1
(5) VCP < Vth(pd)CP OR overcurrent fault time > 110 tph OR fbridge(max) detected in capacitive mode
(6) VDD < VDD(stop) OR Vi(DCI) < Vth(start)DCI Vth(hys)DCI
Fig 3. State diagram
001aam665
VDD = 0
RESET STATE
HOLD = 0
START-UP STATE
PREHEAT STATE
IGNITION STATE
HOLD STATE
HOLD = 1
POWER-DOWN STATE
BOOST AND BURN
STATES
preheat time
completed
Ignition_Detected
VDD > VDD(rst) VDD < VDD(rst)
VDD < VDD(rst)
VCP < Vth(rel)CP
(3)
(2)
(1)
(4)
(5)(6)
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Product data sheet Rev. 2 — 8 September 2011 6 of 32
NXP Semiconductors UBA20270
600 V Driver IC for dimmable compact fluorescent lamps
7.1 Lamp start-up cycle
7.1.1 Reset state
The UBA20270 is in a reset stat e while the supply voltage on the VDD pin is below the
VDD(rst) level. In the reset state, a part of the internal supply is turned off, all registers,
counters and timers are undefined. In addition, the hold state latch is reset and both the
applied external high and low-side transistor (Q1, Q2) are non-conductive. During
power-up, the low voltage supply capacitor on the VDD pin is charged via an external
start-up resistor. When the voltage on the VDD pi n is above the VDD(rst) level, the start-up
state is entered. The UBA20270 enters the reset state when the supply voltage on the
VDD pin drops lower th an VDD(rst).
7.1.2 Start-up state
Start-up is achieved by charging the low voltage supply capacitor on the VDD pin via an
external start-up resistor. At start-up the High-Side (HS) transistor is non-conductive and
the Low-Side (LS) is conductive to enable charging of the bootstrap capacitor. This
capacitor supplies the HS driver and level shifter circuit connected between the FS and
HBO pin. A DC reset circuit is incorporated in the ICs HS driver. This circuit ensures that
lower than the lockout voltage on the FS pin the output voltage (VGHS - VHBO) is zero.
As the start-up state is entered, the circuit only starts oscillating when the low voltage
supply (VDD) reaches the value of VDD(start) AND Vi(DCI) > Vth(start)DCI. The circuit starts
oscillating at fbridge(max).
The circuit enters the preh eat state as soon as the capacito r on the CP pin is charged to a
voltage level above Vth(CP)max. To remain oscillating, the VDD voltage must remain higher
than VDD(stop) and lower than the upper limit VDD(clamp). In addition, the typical voltage level
on the DCI pin must be higher than Vth(start)DCI Vth(hys)DCI = 0.24 V.
An UnderVoltage LockOut (UVLO) is implemen ted on the DCI pin to create a guaranteed
turn-off for multiple lamps when the lamps are at low dim levels. The UVLO also
guarantees that there is a preheat phase when the dim level is turned up again.
The typical turn-on level on the DCI pin is set to lower than Vth(start)DCI = 0.36 V, else it
increases the turn- on hysteresis of the lamp. This level enables the UBA20270 to perform
a stable ignition of the lamp when there is already sufficient power from the dimmer at
lower dim levels.
During the start-up state, the voltage on the CF pin is at zero and the CB pin is close to
zero. The voltage on the CP pin rises to higher than Vth(CP)max level during the start-up
state. See Figure 9.
7.1.3 Preheat state
Starting at fbridge(max), the frequency decreases by charging capacitor CCI via an output
current circuit controlled by the preheat current sensor circuit. This state continues until
the momentary valu e of th e vo ltag e acro ss sens e re sist or RSLS reaches the internally
fixed preheat voltage level (SLS pin). At this level, the current of the preheat current
sensor reaches a charge and discharge balanced state on capacitor CCI to set the
frequency.
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Product data sheet Rev. 2 — 8 September 2011 7 of 32
NXP Semiconductors UBA20270
600 V Driver IC for dimmable compact fluorescent lamps
The preheat time consists of eight saw-toothed pulses at the CP pin. Prehe at be g ins as
soon as the capacitor on the CP pin is char ged to a voltage higher than Vth(CP)max. During
the preheat time, the current feedback sensor circuit (input CSI pin) is disabl ed. To
increase noise immunity, an internal filter of 30 ns is included at the SLS pin.
If during preheat, the level on the DCI pin drops lower than Vth(start)DCI Vth(hys)DCI
= 0.24 V or the VDD pin drops lower than VDD(stop), the preheat state is immediately
stopped. The circuit enters the hold state delaying a new preheat cycle. A fixed voltage
drop on the preheat capacitor CCP and a fixed discharge current on the CP pin sets the
delay time.
A new preheat cycle starts after the CP pin level slowly discharges. This condition
continues until VCP < Vth(rel)CP and recharges higher than Vth(CP)max provided
VDD > VDD(start) AND Vi(DCI) > Vth(start)DCI. See Figure 5.
7.1.4 Ignition state
Directly after the preheat state has been completed, the ignition state is entered. In the
ignition state, the frequency sweeps down due to charging of the capacitor CCI on the CI
pin with an internally fixed current. See Figure 4. During this continuous decrease in
frequency, the circ uit appro a ch es th e re so na nt frequency of the resonant tank L2, C5.
This results in a high voltage across the lamp to igni te the lamp. The cu rrent sensor circuit
which monitors the voltage over resistor RCSI detects lamp ignition. See Figure 11.
If the voltage on the CSI pin is above the typical ignition detection threshold voltage level
of 0.6 V, lamp ignition is detected. The system then changes from ignition state to the
boost or burn state. If no ignition is detected, the frequency decreases further to the
minimum half-bridge frequency fbridge(min). To prevent continuous ignition attempts and
over-heating of the applicatio n due to lamp damage, the UBA20270 only attempt s to ignite
the lamp twice after powe r-up. The ignition attempt coun ter is incremente d when the lamp
ignition threshold voltage on the CSI pin is not exceeded at the end of the ignition
enabling time. If a second ignition attempt also exceeds the ignition tim e-out period, the IC
enters the power-down state. See Figure 5.
Fig 4. CFL frequency from start to burn state
boostignition burntransitionpreheat
100
f
(kHz)
start frequency
preheat frequency
CFL ignition
time (s)
100 %
001aam764
boost bottom ~22 kHz
A CB
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Product data sheet Rev. 2 — 8 September 2011 8 of 32
NXP Semiconductors UBA20270
600 V Driver IC for dimmable compact fluorescent lamps
7.1.5 Boost state and transition to burn state
When ignition is dete cted by me asuring lamp cur rent on th e CSI pin, the circuit en ters the
boost state. Figure 7 shows the boost and burn state in more detail. In the b oost state, the
nominal burn state lamp current can be increased with a fixed boost ratio of 1.5:1. This
boosts up the slow luminescence increase of a cold amalgam CFL lamp, provided
VDCI > Vth(bst)DCI. If the IC is at a temperature (T j(bp)bst) before entering the boost state, the
burn state is bypassed.
A boost timing circuit is included to determine th e boost time and transition to burn time.
The circuit consists of a clo ck generator comprising CCB, R ext(RREF) and a 64 -step counter.
When the timer is not operating, CCB is discharged to lower than the Vth(CB)min level of
1.1 V. This voltage, about 0.6 V, is still higher than the level at which the comparator on
CCB detects if the CB pin is shorted to ground.
The boost time consists of 63 saw-toothed pulses at the CB pin and automatically
followed by the transition time at the CP pin. The 32 saw-tooth pulses form the transition
time from boost to burn ena bling a smooth tr ansitio n between the cu rrent con trolled boost
and burn state. The total transition time is approximate ly four times the preheat time as
shown in Figure 6.
Fig 5. Retry cycle
001aan537
voltage
(V)
VCP
Vth(CP)max
5 V
0 V
Vth(CP)min
Vth(rel)CP
tph tph
restart
delay time
startup
time
ten(ign) ten(ign)
2nd
startup
td(restart)
discharge
to 0 V
time (s)
1st preheat
time
1st ignition
enabling time
2nd ignition
enabling time
2nd preheat
time
2nd failed
ignition
attempt
1st failed
ignition
attempt
POWER DOWN STATE
HOLD STATE
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Product data sheet Rev. 2 — 8 September 2011 9 of 32
NXP Semiconductors UBA20270
600 V Driver IC for dimmable compact fluorescent lamps
In the boost state, the lamp current feedback control circuit operates the same as in the
burn state. This action is used to improve lamp stability. Lamp current boosted by a fixed
ratio of 1.5 compared to the burn state, boosts up the slow luminescence increase of a
cold CFL lamp. In the boost to burn transition time there is a slow 15-step ratio decrease
from 1.5 to 1. For the transition to burn time, the preheat timer is reused and the boost
ratio is gradually decreased in 15 steps from 1.5 to 1. The steps occur within 32
saw-toothed pulses on the CP pin. The 32 saw-toothed pulses form the transition time
from boost to burn to enab le a smooth transition between the current controlled bo ost and
burn state. Given the application values of CCB and Rext(RREF) a boost time of more than
300 s is possible. In addition to boost bypass at temperature Tj(bp)bst ( 80 C), there is a
temperature protection function during the boo st state of Tj(end)bst ( 120 C). If the IC
temperature passes this level during boost, the transition timer is immediately started in
order to enter the burn state faster. This action effectively reduces the boost time. See
Figure 4 [B].
The current boost in the boost state does not start when Vi(DCI) is lower than Vth(bst)DCI.
Current boos t en ds when Vi(DCI) is lower than Vth(bst)DCI Vth(bst)hys(DCI) without a boost
transition. See Figure 4 [A].
Remark: If the CB pin is shorted to ground, the boost function is disabled. During such
conditions, the bottom frequency fbridge(min) is 1.8 times higher than the boost bottom
frequency fbridge(bst)min.
7.1.6 Burn state
After the boost state, or when the boost state is bypassed burn state starts. The lamp
current sensor circuit is still enabled. See Figure 4 [A]. The CSI pin (current sense input)
measures the RMS voltage across sense resistor RCSI. It then passes through a
Double-Sided Rectifier (DSR) circuit and fed towards an Operational Transconductor
Amplifier (OTA). When the RMS voltage on the CSI pin reaches the internal reference
level, the lamp current sensor circuit takes over the control of the lamp current. The
Fig 6. Boost timing
001aam765
voltage
(V)
5 V
VCB
VCP
Vth(CP)max 4.5 V
Vth(CP)min 3.8 V
Vth(CB)max 3.6 V
Vth(CB)min
0.6 V
1
ignition boost transition burn
time (s)
132
2616263
0 V
1.1 V
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Product data sheet Rev. 2 — 8 September 2011 10 of 32
NXP Semiconductors UBA20270
600 V Driver IC for dimmable compact fluorescent lamps
internal curr ent output of th e OTA is tran sferred via an inte grator on the CI pin to the input
of the Voltage Controlled Oscillator (VCO). The VCO regulates the frequency and as a
result, the lamp current.
7.1.7 Hold state
The hold state is a special state to reduce lamp flicker at deep dim levels, on or near dim
and ignition threshold level. See Figure 3.
The hold state is entered following:
a failed ignition attempt
or when the low supply voltage VDD is lower than VDD(stop) in the ignition or preheat
state
or when VDCI < Vth(start)DCI Vth(hys)DCI in the ignition or preheat state
A repeated aborted preheat or ignition cycle due to a drop in DCI voltage that is lower than
Vth(start)DCI Vth(hys)DCI or a drop in supply volt age that is lower than VDD(stop) in preheat or
ignition state does no t increment the ignition attempt counte r . The UBA20271/2 enters the
hold state only delaying a new preheat cycle by the same time delay and mechanism. As
shown in Figure 5 hold state retention time.
(1) Temp > Tj(bp)bst OR Boost_Disable
(2) Temp < Tj(bp)bst AND NOT Boost_Disable
(3) NOT (Boost OR Boost transition)
(4) Temp > Tj(end)bst OR Boost timer ended OR (Boost_ratio = 1.5 AND VDCI < Vth(bst)DCI - Vth(bst)hys(DCI))
(5) Boost_Transition timer ended OR VDCI < Vth(bst)DCI Vth(bst)hys(DCI) OR Temp > Tj(otp)
Fig 7. Boost and burn state machine
001aam668
BOOST AND BURN
STATES
01
boost
boost timer running
Boost_ratio = 1 Boost_ratio = 1.5
11
boost transition
00
burn select
10
burn
temp < (Tj(otp) - Tj(otp)hys
(3)
Vi(DCI) > Vth(bst)DCI AND boost
(1) (4)
(5)
(2)
temp > (Tj(otp)
Vi(CSI) = Votp(CSI)
(66 % level)
Vi(CSI) = Vclamp(CSI)
(100 % level)
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Product data sheet Rev. 2 — 8 September 2011 11 of 32
NXP Semiconductors UBA20270
600 V Driver IC for dimmable compact fluorescent lamps
When CP is lower than Vth(rel)CP, the IC is released from the hold state and moves to the
start-up state. See Figure 3. Alternatively, the hold state ends when the supply voltage is
lower than VDD(rst) and the IC is reset.
With a 470 nF capacito r on the CP pin, the typical hold state retention delay is between
1.0 seconds and 1.7 seconds. However, it depends on where the preheat cycle is cut off
on the rising or falling edge of the preheat timing. The retention time for a failed ignition
always st arts fro m the top of the rising edge on the CP pin. See Figure 5. In the hold state,
a latch is set (hold state latch = 1), the oscillator is stopped, transistor HS is
non-conductive and transistor LS conducting. The voltage on pin VDD alternates between
VDD(start) and VDD(stop) as long as the voltage on the CP pin has no t reach ed Vth(rel)CP. See
Figure 5.
The alternating supply voltage is a result of the current drawn by the IC supply pin VDD.
The supply current is less than 220 A, when the supply voltage VDD is increasing
between VDD(stop) and VDD(start). The supply current is typically 2 mA when VDD is
decreasing between VDD(start) and VDD(stop). More current is drawn during the decreasing
slope of VDD as the internal analog supply is turned on when VDD > VDD(start). This
condition enables comp arators in the IC to monitor the volt a ge on the CP pin and whether
the supply voltage VDD decreases lower than VDD(stop).
7.2 Oscillation and timing
7.2.1 Oscillation
The internal oscillator is a VCO circuit which generates a sawtooth waveform between the
Vth(CF)max level and 0 V. Capacitor CCF, resistor Rext(RREF), and the voltage at the CI pin
determine the frequency of the sawtooth. Rext(RREF) and CCF determine the minimum and
maximum switching frequencies. Their ratio is internally fixed. There are two ratios, the
ratio between fbridge(max) and fbridge(min) is 2.5 and the ratio be tw ee n fbridge(max) and
fbridge(bst)min is 4.6. The sawtooth frequency is twice the half-bridge frequ ency.
Transistors HS (Q1) and LS (Q2) are brought into conduction with a duty cycle of
approximately 50 %. Figure 8 provides an overview of the oscillator signal and driver
signals. The oscillator starts oscillating at fbridge(max). The non-overlap time between the
gate drive signals VGLS and VGHS is tno.
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Product data sheet Rev. 2 — 8 September 2011 12 of 32
NXP Semiconductors UBA20270
600 V Driver IC for dimmable compact fluorescent lamps
7.2.2 Combined timing circuit
A combined timing cir cuit is in cluded to deter mine the prehea t time , ignitio n enablin g time
and overcurrent time, see Figure 9. The circuit consists of a clock generator defined by
CCP and Rext(RREF) and a counter. When the timer is not op erating, CCP is char ged to 5 V.
The timing circuit starts operating after the start-up state, as soon as the low supply
voltage has reached VDD(start). Additionally the DCI input voltage must be higher than
Vth(start)DCI and the voltag e on the CP pin must pass Vth(CP)max. The preheat time consists
of eight saw-tooth pulses on the CP pin as shown in Figure 9. The maximum ignition
enabling time following the preheat phase is two complete sawtooth (triangular) pulses.
During the boost and burn state, part of the timer is used to generate the maximum
overcurren t tim e (m or e th an on e ha lf of the saw-toothed pulse). If a continuous
overcurren t is det ec t ed, the timer starts.
Fig 8. Sawtooth, gate driver and half-brid ge output signals
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Product data sheet Rev. 2 — 8 September 2011 13 of 32
NXP Semiconductors UBA20270
600 V Driver IC for dimmable compact fluorescent lamps
7.3 Natural linear dimming
What determines the actual internal set point level used for the current control feedback
loop is an external level applied via the DCI pin for dimming. Th e DCI voltage is a function
of the phase cut angle of the applied dimmer. To ensure that the external input for the
control on the DCI pin internally stays within a certain range, this input signal passes an
internal linear to logarithmic conversion circuit followed by a limiting circuit.
The linear to logarithmic conversion circuit is designed to improve dimming control by
correcting for the higher sensitivity of the human eye to small changes in low light levels.
See Figure 10. The conversion circuit also provides a natural perceived linear brightness
adjustment of the lamp.
The limiting circuit prevents the signal falling below the MDL or rising above the 100 %
reference level of Vclamp(CSI). The ou tput of the linear to logarithmic conversion circuit is
the actual reference voltage for the lamp current control loop. See signal VLD in Figure 1
(dimmer control block). When the IC is in the burn state, the voltage is equal to the RMS
voltage on the CSI pin. When the control loop is regulating correctly, the upper limit is
clamped at the 10 0 % reference level. This condition prevents lamp current values that
are too high in mains overvoltage situations. See Figure 10.
The MDL level pr esets a minimu m to which the la mp current clips at low dim levels and is
adjustable via the MDL pin. An accurate minimum dimming voltage level is set by using an
internal reference current (derived from the internal band gap reference circuit and
resistor Rext(RREF)) and an applied external resistor RMDL on the MDL pin.
Fig 9. Timing diagram preheat, igni tion and overcurrent
001aam768
voltage
(V)
5 V
0 V
4.5 V
3.8 V
VCP
startup
time
preheat time boost-burn power down
overcurrent
fault time
CFL ignition
ignition
time
ignition
enabling time
time (s)
Vth(CP)max
Vth(CP)min
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Product data sheet Rev. 2 — 8 September 2011 14 of 32
NXP Semiconductors UBA20270
600 V Driver IC for dimmable compact fluorescent lamps
7.4 Protection and power-down
7.4.1 Coil saturation protection
Coil saturation protection is integrated into the IC to allow for the use of small CFL lamps
and use of small coils. Saturation of these co ils is detected and excessive overcurre nt due
to saturation is prevented. Coil saturation protection is only enabled during the ignition
state. To limit voltages and currents in the reso nant circuit when there is no ignition or
delayed ignition, a cycle-by-cycle control mechanism is used to prevent coil saturation.
This control also limits the high peak current and dissipation in the half-bridge power
transistors.
Coil saturation is detected by monito rin g the vo ltage acro ss th e RSLS resistor. A trigger is
generated when this voltage exceeds the Vth(sat)SLS level. When saturation is detected, a
fixed current Io(sat)CF is injected into the CCF capacitor to shorten the switching cycle of
the half-bridge. The injected current is maintained until the end of the switching cycle. This
action immediately increases the half-bridge switching frequency. Furthermore, in each
successive cycle that coil saturation is detected, capacitor CCI is discharged to enable an
ignition time-out detection in the ignition state.
(1) Vi(CSI) = VLD = f(Vi(DCI))
Fig 10. CSI voltage as a func tion of DCI volt age
0
0
0.2
Vth(hys)DCI
VT(hec1)DCI
midcurve
MDL
VT(hec2)DCI
Vth(start)DCI
0.9
100 %
VLD
Vclamp(CSI)
internal
clamp
0.4 0.6
(1)
0.8 1.0 1.2 1.4 1.6
001aam671
VT(hec3)DCI
0.2
0.4
0.6
0.8
1.0
1.2
Vi(DCI) (V)
Vi(CSI)
[VRMS]
voltage
(V)
voltage
(V)
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Product data sheet Rev. 2 — 8 September 2011 15 of 32
NXP Semiconductors UBA20270
600 V Driver IC for dimmable compact fluorescent lamps
Coil saturation protectio n is triggered when the voltage on the SLS pin exceeds Vth(sat)SLS.
The voltage VSLS on the SLS pin is also used to set the preheat current. T he value of
external resist or RSLS determines this voltage.
7.4.2 OverCurrent Protection (OCP)
OCP is active in the burn and boost states (not during boost transition). When the peak
absolute value of the voltage across the current sense resistor on the SLS pin exceeds
the OCP reference level Vth(ocp)SLS, overcurrent is detected . A current Io(CP) is then sunk
from the capacitor connected to the CP pin for the next full cycle. If the overcurrent is
absent at the end of this cycle, the current is disabled. Instead a current, also equal to
Io(CP), is sourced to the CP pin. If the overcurrent occurs in more than half the number of
cycles, there is a net disc ha rg in g of the capacitor connected to the CP pin. When the
voltage, on the CP pin is lower than Vth(CP)min the IC enters power-down mode. In a
continuous overcurrent condition, the overcurrent time-out of tfault(oc) takes about 110 tph.
The IC then enters the power-down mode. The Vth(ocp)SLS level corresponds with the
Vth(sat)SLS level during the ignition state.
7.4.3 OverPower Protection (OPP)
OPP is active in boost and burn state. The lamp current is limited and regulated to its
nominal designed lamp current in case overvoltage situations on the mains supply occur.
The overpower comes into action when the DCI voltage, that regulates the lamp cur rent is
exceeding the maximum DCI input range. Internally the DCI voltage is clamped to the
maximum input voltage level VT(hec3)DCI, see Figure 10. The DCI clamp level is
independent of any supply voltage fluctuations.
7.4.4 Capacitive Mode Protection (CMP)
CMP is active in the ignition, burn and boost states and during boost tra nsition. The signal
across resistor RSLS also provides inform a tio n ab ou t th e switc hin g beh av ior of the
half-bridge. When conditions are normal, the current flows from the source of the LS
transistor to the half-bridge when the LS transistor is switched on. This results in a
negative voltage on the SLS pin. As the circuit yields to capacitive mode, the voltage
decreases and eventually rever s es polarity. The protectio n pr events this condition fro m
happening by checking if the voltage on the SLS pin is higher than Vth(capm)SLS.
If the voltage across resistor RSLS is above the Vth(capm)SLS threshold when the LS
transistor is switched on, the circuit assumes that it is in capacitive mode. When
capacitive mod e is detected, the curren ts fr om the OT A are di sabl e d an d the ca pa citive
mode sink current, I o(sink)CI, is enabled. This sink current discharges the capacitor/resistor
circuitry on the CI pin and as a result gradually increase the half-bridge frequency.
Discharge continues for the remainder of the current switching cycle, so the total current
on CI is equal to the sink current. If capacitive mode persists, the action is repeated until
capacitive mode is not detected. If the capacitive mode is no longer detected, the OTA
starts regulating again.
If the conditions causing the capacitive mode persist, the OTA regulates the system back
towards capacitive mode with the protection system taking control. The system operates
on the edge of capacitive mode. During boost and burn state, if the load on the half-bridge
continues to be cap acitive at higher frequ encies, CMP eventually drives the half-bridge to
the maximum frequency fbridge(max). From this point, the IC enters power- d own mode .
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Product data sheet Rev. 2 — 8 September 2011 16 of 32
NXP Semiconductors UBA20270
600 V Driver IC for dimmable compact fluorescent lamps
7.4.5 Power-down mode
Power-down mode is entered when:
a continuous overcurr ent exceeds th e maximum overcur rent time-out t fault(oc). Or over
a longer period if the overcurrent occurs in more than half the number of cycles as
soon as Vth(CP)min is reached.
during the boost or the burn state fbridge(max) is reached due to capacitive mode
detection
two consecutive failed lamp ignition attempts occur
In power-down mode, the oscillator is stopped and the HS transistor is non-conductive
while the LS transistor is conductive. The VDD supply is internally clamped. The circuit is
released from power-down mode by lowering the low voltage supply lower than VDD(rst)
(mains switch reset).
An option exists to set the IC in power-down mode via external logic. The external
power-down option is only available when the IC is in the boost or burn state. To enable
the external power-down option, the CP pin is used. When pin CP, is connected via a
10 k resistor to either PGND or SGND the voltage on pin CP is pulled down lower than
Vth(pd)CP. This results in the IC entering power-down mode.
Remark: Do not connect the CP pin directly to SGND or PGND pin. Connect the SGND or
PGND pin via a series 10 kresistor otherwise excessive currents flow during reset and
start-up state. Excessive current prevent the IC from starting up.
7.4.6 OverTemperature Protection (OTP)
The OTP circuit is designed to prevent the IC from overheating in hazardous
environments. The circuit is triggered when the IC temperature exceeds the maximum
temperature value Tj(otp). OTP changes the lamp current to the level that corresponds to
Votp(CSI) level. This condition remains until the IC temperature reduces by 20 C
(=Tj(otp)hys) and returns to the DCI controlled level.
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Product data sheet Rev. 2 — 8 September 2011 17 of 32
NXP Semiconductors UBA20270
600 V Driver IC for dimmable compact fluorescent lamps
8. Limiting values
[1] In accordance with SNW-FQ-303: all pins.
9. Thermal characteristics
Table 3. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
General
Rext(RREF) external resistance on pin RREF fixed nominal value
33 k
30 36 k
SR slew rate on pins HBO with
respect to GND 4+4 V/ns
Tamb ambient temperature P = 0.8 W 40 85 C
Tjjunction temperature 40 +150 C
Tstg storage temperature 55 +150 C
Currents
Ii(CF) input current on pin CF 0200 A
Voltages
VHBO voltage on pin HBO operating -500 V
during 1 second -600 V
VFS voltage on pin FS with respect to HBO 0.3 +14 V
VDD supply voltage 0.3 +14 V
Vi(CSI) input voltage on pin CSI 5+5 V
Vi(DCI) input voltage on pin DCI 0 5 V
Vi(SLS) input voltage on pin SLS 6+6 V
VCI voltage on pin CI 03.5 V
VMDL voltage on pin MDL 0 5 V
ESD
VESD electrostatic discharge voltage human body model:
all pins, except pins
14,15, and 16 2000 +2000 V
pins 14,15, and 16 1000 +1000 V
charged device model:
all pins 500+500 V
Latch-up [1] - - -
Table 4. Thermal characteristics
Symbol Parameter Conditions Typ Unit
Rth(j-a) thermal resistance from junction to
ambient in free air; SO16 package 100 K/W
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Product data sheet Rev. 2 — 8 September 2011 18 of 32
NXP Semiconductors UBA20270
600 V Driver IC for dimmable compact fluorescent lamps
10. Characteristics
Table 5. Characteristics
VDD = 13 V; VFS - VHBO = 13 V ; Tamb = 25
C; settings according to default setting in Table 6, all voltages referenced to GND,
positive currents flow into the IC, unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Start-up state (VDD)
VDD(rst) reset supply voltage high-side switch = off;
low side switch = on 5.7 6.2 6.7 V
VDD(stop) stop supply volt age 9.6 10.0 10.4 V
VDD(start) start supply voltage 11.9 12.4 12.9 V
VDD(hys) hysteresis of supply
voltage 2.2 2.4 2.6 V
VDD(clamp) clamp supply voltage Iclamp(VDD) = 5 mA 13.0 13.4 13.8 V
IDD(clamp) clamp supply current VDD = 14 V 20 30 -mA
IDD(startup) start-up supply current VDD = 9 V - 190 220 A
IDD(pd) power-down supply
current VDD = 9 V - 190 220 A
IDD supply current default setting; VDCI = 1.4 V
VCI = Vclamp(CI), VCB = 0 V
[1] -1.6 2.0 mA
High-voltage supply (GHS, HBO and FS)
Ileak leakage current 500 V on high-voltage pins - - 30 A
Voltage controlled oscillator
Output pin IC
VCI(max) maximum voltage on
pin CI 2.7 3.0 3.3 V
Vhr(CI) headroom voltage on
pin CI Vclamp(CI) = Vhr(CI)) + VCI(max) ;
burn and boost state -80 -mV
Voltage controlled oscillator
Output pin CF
fbridge(max) maximum bridge
frequency CCF = 100 pF; VCI = 0 V [2] 88 100 112 kHz
fbridge(bst)min minimum boost bridge
frequency CCF = 100 pF;
VCI = Vclamp(CI)
[2] 21 22 23 kHz
fbridge(min) minimum bridge
frequency CCF = 100 pF;
VCI = Vclamp(CI); VCB = 0 V [2] 38 40 42 kHz
tno non-overlap time VHBO rising edge 1.3 1.5 1.7 s
VHBO falling edge 1.3 1.5 1.7 s
Vth(CF)max maximum threshold
voltage on pin CF CCF = 100 pF;
VCI = Vclamp(CI); VCB = 0 V 2.40 2.50 2.60 V
Io(bst)CF boost output current on
pin CF VCF = 1.5 V; VCI = Vclamp(CI) 12.3 11.8 11.3 A
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Product data sheet Rev. 2 — 8 September 2011 19 of 32
NXP Semiconductors UBA20270
600 V Driver IC for dimmable compact fluorescent lamps
Io(CF)min minimum output current
on pin CF VCF = 1.5 V; VCB = 0 V ;
VCI = Vclamp(CI)
22.8 21.8 20.8 A
Io(CF)max m aximum output
current on pin CF VCF = 1.5 V; VCB = 0 V 67.0 60.0 53.0 A
Gate driver output
Output pins GLS, GHS
Isource(drv) driver source current VG = 4 V (GLS or GHS);
VHBO = 0 V; VDD = VFS
= 12 V
105 90 75 mA
Rsink(drv) driver sink resistance VG = 2 V (GLS or GHS);
VHBO = 0 V;
VDD = VFS = 12 V
13 15.5 18
Table 5. Characteristics continued
VDD = 13 V; VFS - VHBO = 13 V ; Tamb = 25
C; settings according to default setting in Table 6, all voltages referenced to GND,
positive currents flow into the IC, unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
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Product data sheet Rev. 2 — 8 September 2011 20 of 32
NXP Semiconductors UBA20270
600 V Driver IC for dimmable compact fluorescent lamps
Bootstrap diode
VFforward voltage bootstrap diode; IFS = 5 mA;
(VF = VDD - VFS)1.3 1.7 2.1 V
Preheat current sensor
Input: pin SLS
II(SLS) input current on pin
SLS Vi(SLS) = 0.4 V - - 1 A
Vph(SLS) preheat voltage on pin
SLS [3] 0.57 0.60 0.63 V
Output: pin CI
Io(source)CI source outpu t current
on pin CI VCI = 2.0 V; Vi(SLS) < 0.6 V 10.6 9.6 8.6 A
Io(sink)CI sink output current on
pin CI VCI = 2.0 V; Vi(SLS) > 0.6 V 26 29 32 A
Preheat timer, ignition timer, overcurrent fault timer
Pin CP
tph preheat time CCP = 470 nF;
Rext(RREF) = 33 k
-0.93 - s
ten(ign) ignition enable time CCP = 470 nF;
Rext(RREF) = 33 k
-0.22 - s
tfault(oc) overcurrent fault time CCP = 470 nF;
Rext(RREF) = 33 k;
initial voltage VCP = 5.0 V
-0.10 - s
Io(CP) output current on pin
CP VCP = 4.1 V; source () and
sink (+) 5.5 5.9 6.3 A
Vth(CP)min minimum threshold
voltage on pin CP -3.8 - V
Vth(CP)max maximum threshold
voltage on pin CP -4.5 - V
Vhys(CP) hysteresis voltage on
pin CP 0.6 0.7 0.8 V
Ipu(CP) pull-up current on pin
CP VCP = 3.8 V - 60 -A
Vth(pd)CP power-down threshold
voltage on pin CP burn state, pin CP connected
to SGND via 10 k -1.0 - V
Vth(rel)CP release threshold
voltage on pin CP hold state, VDCI = 1.4 V - 2.7 - V
Boost timer
Pin CB
tbst boost time CCB = 470 nF; Tj < 80 C - 148 - s
Io(CB) output current on pin
CB VCB = 2.35 V; source () and
sink (+) 0.8 1.0 1.2 A
Vth(CB)min minimum threshold
voltage on pin CB -1.1 - V
Table 5. Characteristics continued
VDD = 13 V; VFS - VHBO = 13 V ; Tamb = 25
C; settings according to default setting in Table 6, all voltages referenced to GND,
positive currents flow into the IC, unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
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Product data sheet Rev. 2 — 8 September 2011 21 of 32
NXP Semiconductors UBA20270
600 V Driver IC for dimmable compact fluorescent lamps
Vth(CB)max maximum threshold
voltage on pin CB -3.6 - V
Vhys(CB) hysteresis voltage on
pin CB 2.3 2.5 2.7 V
Tj(bp)bst boost bypass junction
temperature Tj sensed at end ignition time 65 80 95 C
Tj(end)bst boost end junction
temperature Tj during boost time 105 120 135 C
Idet(dis)bst boost disable detection
current VCB = 0 V 30 25 20 A
tt(bst-burn) transition time from
boost to burn CCP = 470 nF; Tj < 80 C - 3.6 - s
Pin CSI
NLCBR lamp current boost ratio VCSI in boost state versus
VCSI in burn state;
VDCI = 1.34 V
1.4 1.5 1.6
Coil saturation protection and overcurrent detection
Input: pin SLS
Vth(sat)SLS saturation threshold
voltage on pin SLS ignition state 2.3 2.5 2.7 V
Vth(ocp)SLS overcurrent protection
threshold voltage on
pin SLS
boost state and burn state 2.3 2.5 2.7 V
tleb leading edge blanking
time detection disabled first part
of GLS time -800 -ns
Output: pin CI
Io(sink)CI sink output current on
pin CI VCI = 2.0 V; ignition state;
Vi(SLS) > Vth(sat)SLS; cycle
clocked
26 29 32 A
Output: pin CF
Io(sat)CF saturation output
current difference on
pin CF
VCF = 1.5 V; ignition state;
low-side switch = on -160 -A
Ignition current detection
Input: pin CSI
Vth(det)ign(CSI) ignition detection
threshold voltage on
pin CSI
0.55 0.60 0.65 V
tw(det)ign(min) minimum ignition
detection pulse width Vth(det)ign(CSI) = 0.75 V
square pulse 685 885 1085 ns
Table 5. Characteristics continued
VDD = 13 V; VFS - VHBO = 13 V ; Tamb = 25
C; settings according to default setting in Table 6, all voltages referenced to GND,
positive currents flow into the IC, unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
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Product data sheet Rev. 2 — 8 September 2011 22 of 32
NXP Semiconductors UBA20270
600 V Driver IC for dimmable compact fluorescent lamps
Capacitive mode detection
Input: pin SLS
Vth(capm)SLS capacitive mode
threshold voltage on
pin SLS
[4] 15 5 0 mV
Output: pin CI
Io(sink)CI sink output current on
pin CI VSLS > Vth(capm)SLS;
VCI = 2.0 V; ignition state or
boost and burn state
26 29 32 A
Lamp current sens or and dimming control
Input: pin CSI
Ri(CSI) input resistance on pin
CSI Vi(CSI) = 1 V 1 - - M
Vi(CSI) = 1 V 40 50 60 k
Vi(CSI) input voltage on pin
CSI controlled fe ed b a ck RMS
voltage at minimum dim
level; Vi(DCI) = 0 V;
Rext(RREF) = 33 k;
RMDL = 2.0 k
44 50 56 mV
controlled fe ed b a ck RMS
voltage at mid scale of lin log
curve in burn state;
Vi(DCI) = 0.9 V;
Rext(RREF) = 33 kW
-215 -mV
voltage rectification range for
linear operation 2.5 -+2.5 V
Vclamp(CSI) clamping voltage on pin
CSI 100 % light output; Vi(DCI)
1.34 V -1.0 - V
Input: pin DCI
Vi(DCI) input voltage on pin
DCI minimum voltage set by MDL
pin resistor VT(hec2)DCI -1.34 V
Ri(DCI) input resistance on pin
DCI Vi(CSI) = 1 V 1 - - M
Vth(bst)DCI boost threshold voltage
on pin DCI 1.00 1.05 1.10 V
Vth(bst)hys(DCI) hysteresis boost
threshold voltage on
pin DCI
80 100 120 mV
Vth(start)DCI start threshold voltage
on pin DCI -0.35 - V
Vth(hys)DCI hysteresis threshold
voltage on pin DCI 80 100 120 mV
VT(hec1)DCI human eye correction 1
transition voltage on pin
DCI
Vi(CSI) = 0 V; VMDL = 0 V - 0.17 - V
Table 5. Characteristics continued
VDD = 13 V; VFS - VHBO = 13 V ; Tamb = 25
C; settings according to default setting in Table 6, all voltages referenced to GND,
positive currents flow into the IC, unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
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Product data sheet Rev. 2 — 8 September 2011 23 of 32
NXP Semiconductors UBA20270
600 V Driver IC for dimmable compact fluorescent lamps
[1] For the default setting, see Table 6.
[2] Switching frequency of the half-bridge output HBO. The sawtooth frequency on pin CF is twice as high.
[3] Data sampling of Vph(SLS) is performed at the end of the conduction period of the low-side power MOSFET, in preheat state.
[4] Data sampling of Vth(capm)SLS is performed at the start of conduction of the low-side power MOSFET, in all states with oscillator active.
VT(hec2)DCI human eye correction 2
transition voltage on pin
DCI
Rext(RREF) = 33 k;
RMDL = 2.0 k;
Vi(CSI) = Vclamp(CSI)
-0.44 - V
VT(hec3)DCI human eye correction 3
transition voltage on pin
DCI
Vi(CSI) = 1 V - 1.34 - V
Votp(CSI) overtemperature
protection voltage on
pin CSI
RMS voltage;
Rext(RREF) = 33 k;
RMDL = 2.0 k;
Vi(DCI) = 1.5 V;
Tj > Tj(otp) Tj(otp)hys
380 400 420 mV
Output: pin CI
Io(CI) output current on pin CI burn state; source () and
sink (+); VCI = 2.0 V 85 95 105 A
Input: pin MDL
Isource(MDL) source current on pin
MDL 26.3 25.0 23.7 A
VMDL voltage on pin MDL Rext(RREF) = 33 k;
RMDL = 2.0 k
-50 -mV
Te mperature protection
Tj(otp) overtemperature
protection junction
temperature
145 160 175 C
Tj(otp)hys hysteresis
overtemperature
protection junction
temperature
10 20 30 C
Table 5. Characteristics continued
VDD = 13 V; VFS - VHBO = 13 V ; Tamb = 25
C; settings according to default setting in Table 6, all voltages referenced to GND,
positive currents flow into the IC, unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
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Product data sheet Rev. 2 — 8 September 2011 24 of 32
NXP Semiconductors UBA20270
600 V Driver IC for dimmable compact fluorescent lamps
11. Application information
11.1 Design equations
All equations are only valid for Rext(RREF) = 33 k
11.1.1 CCP related timing equations:
Preheat time:
(1)
Ignition enabling time:
(2)
Overcurrent fau lt time:
(3)
Transition to burn time:
(4)
Restart delay time:
(5)
Where: Irestart(CP) = 0.5 A (typical)
11.1.2 CCB related timing equations:
Boost time:
(6)
11.1.3 CCF related frequency equations:
Maximum bridge frequency:
(7)
Minimum bridge frequency with disabled boost:
tph CCP
IoCP
-------------- 16 Vhys CP5V
th CPmax
+=
ten ign
CCP
IoCP
-------------- 4V
hys CP
=
tfault oc
CCP
IoCP
-------------- 5V
th CPmin
=
tt bst burn
CCP
IoCP
-------------- 64 Vhys CP5V
th CPmax
+=
tdrestart
CCP
Irestart CP
--------------------------Vth CPmax Vth relCP
=
tbst CCB
IoCB
-------------- 126 Vhys CBVth CBmin 0.6+=
fbridge max
0.5
CCF Cpar
+
IoCFmax
--------------------------- Vth CFmax tdch
+
----------------------------------------------------------------------------
=
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Product data sheet Rev. 2 — 8 September 2011 25 of 32
NXP Semiconductors UBA20270
600 V Driver IC for dimmable compact fluorescent lamps
(8)
Minimum bridge frequency with enabled boost:
(9)
Where: Cpar = 4.7 [pF] and tdch = 0.4 [s] (typical)
11.1.4 RSLS related preheat current:
(10)
11.1.5 RMDL related MDL:
MDL threshold voltage:
(11)
Detailed in Table 6 is a list of typical application components. See Figure 11.
fbridge min
0.5
CCF Cpar
+
IoCFmin
--------------------------- Vth CFmax tdch
+
----------------------------------------------------------------------------
=
fbridge bstmin 0.5
CCF Cpar
+
IobstCF
--------------------------- Vth CFmax tdch
+
----------------------------------------------------------------------------
=
Iph M
Vph SLS
RSLS
--------------------
=Iph RMS
Vph SLS
RSLS 3
-------------------------
VMDL RMDL Isource MDL
=
Fig 11. Applicatio n dia gram
001aam672
R7
R10
R9
D9
R1
R8
RMDL
RREF
L1
D5 D6
CCB
CCF
CCP
C15
C16
CFL
C3
R4 RSLS
R3
RCSI
R2
R6
D7
R5 Q1
Q2
FS
HBO
CB
CP
CI
MDL
RREF
CF
12
11
8
7
5
6
GHS
GLS
PGND
VDD
SLS
CSI
DCI
14
15
16
2
4
1
9
10
C1 C2
C12
C14 C6R11 C7
C9
C10 C13
C17
C8
L2
C5C4
C11
D3 D4
D8
D1 D2
UBA20270
SGND
313
Table 6. Typical components for a 230 V mains application
Reference Component UBA20270 Description
R1 10 2 W fusible resistor
R2, R3 220 k
R4 22 k
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Product data sheet Rev. 2 — 8 September 2011 26 of 32
NXP Semiconductors UBA20270
600 V Driver IC for dimmable compact fluorescent lamps
R5, R6 330 k
R7, R10 100 k
R8 1 k
R9 1 k
R11 39 k
RREF 33 k; 1 %
RSLS 1.2
RMDL 1 k
RCSI 8.2 adjust for nominal lamp current
C1, C2 22 nF; 630 V
C3 3.3 nF; 1000 V
C4 10 F; 400 V
C5 4.7 nF; 1000 V lamp capacitor
C6, C14 470 nF
C7 100 pF
C8 47 nF; 400 V
C9 560 pF; 500 V VDD charge pump capacitor
C10 not mounted
C11 4.7 nF
C12 100 nF
C13 470 nF
C15 220 nF
C16 not mounted
C17 22 nF; 400 V
CCB 150 nF
CCP 470 nF
CCF 100 pF; 2 %
Q1, Q2 SPS02N60C3
D1 to D4 1N4007
D5, D6 1N4937
D7 BZX84JC12
D8 1N4148
L1 4.7 mH mains filter inductor; ISAT = 300 mA
L2 2000/2/2 Hlamp inductor
D9 1N4148
Table 6. Typical components for a 230 V mains application …continued
Reference Component UBA20270 Description
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Product data sheet Rev. 2 — 8 September 2011 27 of 32
NXP Semiconductors UBA20270
600 V Driver IC for dimmable compact fluorescent lamps
12. Package outline
Fig 12. Package outline SOT109-1 (SO16)
X
w
M
θ
A
A
1
A
2
b
p
D
H
E
L
p
Q
detail X
E
Z
e
c
L
v
M
A
(A )
3
A
8
9
1
16
y
pin 1 index
UNIT A
max. A
1
A
2
A
3
b
p
cD
(1)
E
(1) (1)
eH
E
LL
p
QZywv θ
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm
inches
1.75 0.25
0.10 1.45
1.25 0.25 0.49
0.36 0.25
0.19 10.0
9.8 4.0
3.8 1.27 6.2
5.8 0.7
0.6 0.7
0.3 8
0
o
o
0.25 0.1
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
Note
1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included.
1.0
0.4
SOT109-1 99-12-27
03-02-19
076E07 MS-012
0.069 0.010
0.004 0.057
0.049 0.01 0.019
0.014 0.0100
0.0075 0.39
0.38 0.16
0.15 0.05
1.05
0.041
0.244
0.228 0.028
0.020 0.028
0.012
0.01
0.25
0.01 0.004
0.039
0.016
0 2.5 5 mm
scale
SO16: plastic small outline package; 16 leads; body width 3.9 mm SOT109-1
UBA20270 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 8 September 2011 28 of 32
NXP Semiconductors UBA20270
600 V Driver IC for dimmable compact fluorescent lamps
13. Abbreviations
Table 7. Abbreviations
Acronym Description
CFL Compact Fluorescent Lamp
CMP Capacitive Mode Protection
DSR Double-Sided Rectifier
ESD ElectroStatic Discharge
HS High-Side
LS Low-Side
MDL Minimum Dimming Level
OCP OverCurrent Protection
OPP OverPower Protection
OTA Operational Transconductance Amplifier
OTP OverTemperature Protection
RMS Root Mean Square
SR Slew Rate
UVLO UnderVoltage LockOut
VCO Voltage Controlled Osci llator
UBA20270 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 8 September 2011 29 of 32
NXP Semiconductors UBA20270
600 V Driver IC for dimmable compact fluorescent lamps
14. Revision history
Table 8. Revisio n history
Document ID Release date Data sheet status Change notice Supersedes
UBA2027 0 v.2 20110908 Prroduct data sheet -UBA20270 v.1
UBA2027 0 v.1 20110816 Preliminary data sheet - -
UBA20270 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 8 September 2011 30 of 32
NXP Semiconductors UBA20270
600 V Driver IC for dimmable compact fluorescent lamps
15. Legal information
15.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of de vice(s) descr ibed in th is docume nt may have cha nged since this docume nt was publis hed and ma y dif fer in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
15.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liab ility for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and tit le. A short data sh eet is intended
for quick reference only and shou ld not be rel ied u pon to cont ain det ailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the shor t data sheet, the
full data sheet shall pre vail.
Product specificat ion The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to off er functions and qualities beyond those described in the
Product data sheet.
15.3 Disclaimers
Limited warr a nty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequ ential damages (including - wit hout limitatio n - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggreg ate and cumulative l iability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semicondu ctors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all informa tion supplied prior
to the publication hereof .
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suit able for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in perso nal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liab ility for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty tha t such application s will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and ope ration of their applications
and products using NXP Semicondu ctors products , and NXP Semiconductors
accepts no liability for any assistance with applications or cu stomer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suit able and fit for the custome r’s applications and
products planned, as well as fo r the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by custo m er’s
third party customer(s). Customer is responsible for doing all necessary
testing for th e customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanent ly and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semicon ductors
products are so ld subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individua l agreement. In case an individual
agreement is concluded only the term s and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing i n this document may be interpreted or
construed as an of fer t o sell product s that is open for accept ance or t he grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.
Product [short] dat a sheet Production This document contains the product specification.
UBA20270 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 8 September 2011 31 of 32
NXP Semiconductors UBA20270
600 V Driver IC for dimmable compact fluorescent lamps
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualifi ed,
the product is not suitable for automo tive use. It is neither qua lif ied nor test ed
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automot ive specifications and standard s, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applicat ions, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
15.4 Trademarks
Notice: All referenced b rands, produc t names, service names and trademarks
are the property of their respect i ve ow ners.
16. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
NXP Semiconductors UBA20270
600 V Driver IC for dimmable compact fluorescent lamps
© NXP B.V. 20 11. All rights reserved.
For more information, please visit: http://www.nxp.co m
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 8 September 2011
Document identifier: UBA20270
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
17. Contents
1 General description. . . . . . . . . . . . . . . . . . . . . . 1
2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1
2.1 Half-bridge features . . . . . . . . . . . . . . . . . . . . . 1
2.2 Preheat and ign ition features . . . . . . . . . . . . . . 1
2.3 Lamp boost features. . . . . . . . . . . . . . . . . . . . . 1
2.4 Dim features . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2.5 Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
2.6 Other features. . . . . . . . . . . . . . . . . . . . . . . . . . 2
3 Applications. . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
4 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
5 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3
6 Pinning information. . . . . . . . . . . . . . . . . . . . . . 4
6.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
6.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 4
7 Functional description . . . . . . . . . . . . . . . . . . . 5
7.1 Lamp start-up cycle . . . . . . . . . . . . . . . . . . . . . 6
7.1.1 Reset state . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
7.1.2 Start-up state . . . . . . . . . . . . . . . . . . . . . . . . . . 6
7.1.3 Preheat state . . . . . . . . . . . . . . . . . . . . . . . . . . 6
7.1.4 Ignition state . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
7.1.5 Boost state and transition to burn state . . . . . . 8
7.1.6 Burn state . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
7.1.7 Hold state . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
7.2 Oscillation and timing . . . . . . . . . . . . . . . . . . . 11
7.2.1 Oscillation. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
7.2.2 Combined timing circuit . . . . . . . . . . . . . . . . . 12
7.3 Natural linear dimming . . . . . . . . . . . . . . . . . . 13
7.4 Protection and powe r -down . . . . . . . . . . . . . . 14
7.4.1 Coil saturation protection . . . . . . . . . . . . . . . . 14
7.4.2 OverCurrent Protection (OCP) . . . . . . . . . . . . 15
7.4.3 OverPower Protection (OPP) . . . . . . . . . . . . . 15
7.4.4 Capacitive Mode Protection (CMP) . . . . . . . . 15
7.4.5 Power-down mode . . . . . . . . . . . . . . . . . . . . . 16
7.4.6 OverTemperature Protection (OTP) . . . . . . . . 16
8 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . 17
9 Thermal characteristics . . . . . . . . . . . . . . . . . 17
10 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . 18
11 Application information. . . . . . . . . . . . . . . . . . 24
11.1 Design equations . . . . . . . . . . . . . . . . . . . . . . 24
11.1.1 CCP related timing equations: . . . . . . . . . . . . 24
11.1.2 CCB related timing equations:. . . . . . . . . . . . . 24
11.1.3 CCF related frequency equations:. . . . . . . . . . 24
11.1.4 RSLS related preheat current: . . . . . . . . . . . . . 25
11.1.5 RMDL related MDL: . . . . . . . . . . . . . . . . . . . . . 25
12 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 27
13 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . 28
14 Revision history . . . . . . . . . . . . . . . . . . . . . . . 29
15 Legal information . . . . . . . . . . . . . . . . . . . . . . 30
15.1 Data sheet status. . . . . . . . . . . . . . . . . . . . . . 30
15.2 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
15.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . 30
15.4 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . 31
16 Contact information . . . . . . . . . . . . . . . . . . . . 31
17 Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32