BC327 / BC328
BC327 / BC328
PNP General Purpose Si-Epitaxial Planar Transistors
Si-Epitaxial Planar-Transistoren für universellen Einsatz PNP
Version 2006-05-30
Dimensions - Maße [mm]
Power dissipation
Verlustleistung
625 mW
Plastic case
Kunststoffgehäuse
TO-92
(10D3)
Weight approx. – Gewicht ca. 0.18 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C)
BC327 BC328
Collector-Emitter-volt. – Kollektor-Emitter-Spannung E-B short - VCES 50 V 30 V
Collector-Emitter-volt. – Kollektor-Emitter-Spannung B open - VCEO 45 V 25 V
Emitter-Base-voltage – Emitter-Basis-Spannung C open - VEBO 5 V
Power dissipation – Verlustleistung Ptot 625 mW 1)
Collector current – Kollektorstrom (dc) - IC800 mA
Peak Collector current – Kollektor-Spitzenstrom - ICM 1 A
Base current – Basisstrom - IB100 mA
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-55...+150°C
-55…+150°C
Charact eris tics (T j = 25°C) Kennwerte (Tj = 25°C)
Min. Typ. Max.
DC current gain – Kollektor-Basis-Stromverhältnis 2)
- VCE = 1 V, - IC = 100 mA Group -16
Group -25
Group -40
hFE
hFE
hFE
100
160
250
160
250
400
250
400
630
- VCE = 1 V, - IC = 300 mA Group -16
Group -25
Group -40
hFE
hFE
hFE
60
100
170
130
200
320
–
–
–
Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg. 2)
- IC = 500 mA, - IB = 50 mA - VCEsat – – 0.7 V
1 Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
© Diotec Semiconductor AG http://www.diotec.com/ 1
16
18
9
2 x 2.54
CBE
BC327 / BC328
Charact eris tics (T j = 25°C) Kennwerte (Tj = 25°C)
Min. Typ. Max.
Base-Emitter-voltage – Basis-Emitter-Spannung 2)
- VCE = 1 V, - IC = 300 mA, - VBE – – 1.2 V
Collector-Emitter cutoff current – Kollektor-Emitter-Reststrom
- VCE = 45 V, (B-E short)
- VCE = 25 V, (B-E short)
BC327
BC328
- ICES
- ICES
–
–
2 nA
2 nA
100 nA
100 nA
- VCE = 45 V, Tj = 125°C, (B-E short)
- VCE = 25 V, Tj = 125°C, (B-E short)
BC327
BC328
- ICES
- ICES
–
–
–
–
10 µA
10 µA
Gain-Bandwidth Product – Transitfrequenz
- VCE = 5 V, - IC = 10 mA, f = 50 MHz fT– 100 MHz –
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- VCB = 10 V, IE =ie = 0, f = 1 MHz CCBO – 12 pF –
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft RthA < 200 K/W 1)
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren BC337 / BC338
Available current gain groups per type
Lieferbare Stromverstärkungsgruppen pro Typ
BC327-16
BC327-25
BC327-40
BC328-16
BC328-25
BC328-40
2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
1 Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
2http://www.diotec.com/ © Diotec Semiconductor AG
[%]
P
tot
120
100
80
60
40
20
0
[°C]
T
A
150100
50
0
Power dissipation versus ambient temperature )
Verlustleistung in Abh. von d. Umgebungstemp. )
1
1
