©2000 Fairchild Semiconductor International
FQB3P20 / FQI3P20
(Note 4)
(Note 4, 5)
(Note 4, 5)
(Note 4)
Rev. A, April 2000
Electrical CharacteristicsTC = 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 29mH, IAS = -2.8A, VDD = -50V , RG = 25 Ω, Starting TJ = 25°C
3. ISD -2.8A, di/dt 300A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
Symbol Parame ter Test Co nditions Min Typ Max Unit s
Off Characteristics
BVDSS Drain-S ource Breakdown Voltage VGS = 0 V, ID = -250 µA-200 -- -- V
∆BVDSS
/ ∆TJ
Breakdown Voltage Temperature
Coefficient ID = -250 µA, Referenced to 25°C -- -0.18 -- V/°C
IDSS Zero Gate Voltage Drain Current VDS = -200 V, VGS = 0 V -- -- -1 µA
VDS = -160 V, TC = 125°C -- -- -10 µA
IGSSF Gate-Body Leakage Current, Forward VGS = -30 V, VDS = 0 V -- -- -100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = 30 V, VDS = 0 V -- -- 100 nA
On Characteri st ics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA-3.0 -- -5.0 V
RDS(on) Static Drain-Source
On-Resistance VGS = -10 V, ID = -1.4 A -- 2.06 2.7 Ω
gFS Forward Transconductance VDS = -40 V, ID = -1.4 A -- 1.23 -- S
Dynamic Characteristics
Ciss Input Capacitance VDS = -25 V, VGS = 0 V,
f = 1.0 MHz
-- 190 250 pF
Coss Output Capacitance -- 45 60 pF
Crss Reverse Transf er Capacitance -- 7.5 10 pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = -100 V, ID = -2.8 A,
RG = 25 Ω
-- 8.5 25 ns
trTurn-On Rise Time -- 35 80 ns
td(off) Turn-Off De l a y Time -- 12 35 ns
tfTurn -Off Fall Time -- 2 5 60 ns
QgTotal Gate Charge VDS = -160 V, ID = -2.8 A,
VGS = -10 V
-- 6.0 8.0 nC
Qgs Gate-Source Charge -- 1.7 -- nC
Qgd Gate-Drain Charge -- 2.9 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
ISMaximum Continuous Drain-Source Diode Forward Current -- -- -2.8 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- -11.2 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, I S = -2.8 A -- -- -5.0 V
trr Reverse Recovery Time VGS = 0 V, IS = -2.8 A,
dIF / dt = 100 A/µs -- 100 -- ns
Qrr Reverse Recovery Charge -- 0.34 -- µC