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Bipolar Transistor
Maximum Ratings:
Characteristic Symbol Rating Unit
Collector - Emitter Voltage VCEO 80 VCollector - Base Voltage IE
Emitter - Base Voltage IC
7
Collector Current 1 A
Base Current IB200 mA
Total Device Dissipation (TC = +25°C) Ptot
6W
Total Device Dissipation(TA = +25°C) 1
Operating Junction Temperature TJ -65 to +200 °C
Storage Temperature Range Tstg
Thermal Resistance, Junction-to-Case RthJC 29 °C/W
Description:
A epitaxial silicon PNP planar transistor in a TO-39 type package designed for use as drivers for high power transistors in
general purpose amplier and switching circuits.
Collector
3
2
Base
1
Emitter
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Page <2> V1.023/04/13
Bipolar Transistor
Important Notice : This data sheet and its contents (the “Information”) belong to the members of the Premier Farnell group of companies (the “Group”) or are licensed to it. No licence is granted
for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change
without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any
error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any
assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the
Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group’s liability for death or personal injury resulting from its negligence.
Multicomp is the registered trademark of the Group. © Premier Farnell plc 2012.
Part Number Table
Description Part Number
Transistor, PNP, 3A, 80V, TO-39 2N4236
Dimensions A B C D E F G H I J K
Min. 8.5 7.74 6.09 0.4 -2.41 4.82 0.71 0.73 12.7 42°
Max. 9.39 8.5 6.6 0.53 0.88 2.66 5.33 0.86 1.02 - 48°
Dimensions : Millimetres
Pin Conguration:
1. Emitter
2. Base
3. Collector
Electrical Characteristics: (TA = +25°C Unless otherwise specied)
Parameter Symbol Test Conditions Min Max Unit
Collector Cutoff Current
ICBO VCB = 80V, IE = 0
-
100 µA
ICEO VCE = 60V, IB = 0 1 mA
ICEV
VCE = 80V, VBE = -1.5V 0.1 µA
VCE = 60V, VBE = -1.5V, TC = +150°C 1 mA
Emitter Cutoff Voltage IEBO VEB = 7V, lC = 0 500 µA
Collector - Emitter Sustaining Voltage VCEO(sus) lC = 100mA, IB = 0, (Note1) 80 -
VCollector - Emitter Saturation Voltage VCE(sat) lC = 1A, IB = 125mA, (Note1) -0.6
Base-Emitter On Voltage VBE VCE = 1V, lC = 250mA 1
DC Current Gain hFE
lC = 250mA, VCE = 2V, (Note 1) 30 150 -
lC = 1A, VCE = 1V, (Note 1) 10 -
Transition Frequency ftVCE = 10V, lC = 100mA, f = 1MHz 3 MHz
Collector - Base Capactiance Ccbo VCB = 10V, lE = 0, f = 0.1MHz - 100 pF
Small - Signal Current Gain hfe VCE = 10V, lC = 50mA, f = 1kHz 25 - -
Note:
1. Pulse Duration : %300µs, Duty Cycle %2%
